DE602005016759D1 - Verfahren und Vorrichtung zum Betreiben einer Kette von Ladungshaftstellen-Speicherzellen - Google Patents
Verfahren und Vorrichtung zum Betreiben einer Kette von Ladungshaftstellen-SpeicherzellenInfo
- Publication number
- DE602005016759D1 DE602005016759D1 DE602005016759T DE602005016759T DE602005016759D1 DE 602005016759 D1 DE602005016759 D1 DE 602005016759D1 DE 602005016759 T DE602005016759 T DE 602005016759T DE 602005016759 T DE602005016759 T DE 602005016759T DE 602005016759 D1 DE602005016759 D1 DE 602005016759D1
- Authority
- DE
- Germany
- Prior art keywords
- arrest
- charge
- chain
- operating
- memory cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/685—Hi-Lo semiconductor devices, e.g. memory devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60852804P | 2004-09-09 | 2004-09-09 | |
US60845504P | 2004-09-09 | 2004-09-09 | |
US10/973,176 US7170785B2 (en) | 2004-09-09 | 2004-10-26 | Method and apparatus for operating a string of charge trapping memory cells |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005016759D1 true DE602005016759D1 (de) | 2009-11-05 |
Family
ID=34933195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005016759T Active DE602005016759D1 (de) | 2004-09-09 | 2005-01-03 | Verfahren und Vorrichtung zum Betreiben einer Kette von Ladungshaftstellen-Speicherzellen |
Country Status (5)
Country | Link |
---|---|
US (2) | US7170785B2 (de) |
EP (1) | EP1638110B1 (de) |
JP (1) | JP4800683B2 (de) |
DE (1) | DE602005016759D1 (de) |
TW (1) | TWI250527B (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7272043B2 (en) * | 2004-12-27 | 2007-09-18 | Macronix International Co., Ltd. | Operation methods for a non-volatile memory cell in an array |
US7292478B2 (en) * | 2005-09-08 | 2007-11-06 | Macronix International Co., Ltd. | Non-volatile memory including charge-trapping layer, and operation and fabrication of the same |
US7692223B2 (en) * | 2006-04-28 | 2010-04-06 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device and method for manufacturing the same |
JP4945183B2 (ja) * | 2006-07-14 | 2012-06-06 | 株式会社東芝 | メモリコントローラ |
US7684243B2 (en) | 2006-08-31 | 2010-03-23 | Micron Technology, Inc. | Reducing read failure in a memory device |
US7583539B2 (en) * | 2006-12-30 | 2009-09-01 | Sandisk Corporation | Non-volatile storage with bias for temperature compensation |
US7525843B2 (en) * | 2006-12-30 | 2009-04-28 | Sandisk Corporation | Non-volatile storage with adaptive body bias |
US7468919B2 (en) * | 2006-12-30 | 2008-12-23 | Sandisk Corporation | Biasing non-volatile storage based on selected word line |
US7468920B2 (en) | 2006-12-30 | 2008-12-23 | Sandisk Corporation | Applying adaptive body bias to non-volatile storage |
US7554853B2 (en) * | 2006-12-30 | 2009-06-30 | Sandisk Corporation | Non-volatile storage with bias based on selective word line |
US7583535B2 (en) * | 2006-12-30 | 2009-09-01 | Sandisk Corporation | Biasing non-volatile storage to compensate for temperature variations |
US7619919B2 (en) * | 2007-01-12 | 2009-11-17 | Marvell World Trade Ltd. | Multi-level memory |
US20080205140A1 (en) * | 2007-02-26 | 2008-08-28 | Aplus Flash Technology, Inc. | Bit line structure for a multilevel, dual-sided nonvolatile memory cell array |
US7830713B2 (en) * | 2007-03-14 | 2010-11-09 | Aplus Flash Technology, Inc. | Bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell NAND flash array |
US7688612B2 (en) * | 2007-04-13 | 2010-03-30 | Aplus Flash Technology, Inc. | Bit line structure for a multilevel, dual-sided nonvolatile memory cell array |
JP5149539B2 (ja) * | 2007-05-21 | 2013-02-20 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP5212770B2 (ja) * | 2007-07-13 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置およびその動作方法 |
JP4510060B2 (ja) * | 2007-09-14 | 2010-07-21 | 株式会社東芝 | 不揮発性半導体記憶装置の読み出し/書き込み制御方法 |
US8335108B2 (en) * | 2008-11-14 | 2012-12-18 | Aplus Flash Technology, Inc. | Bit line gate transistor structure for a multilevel, dual-sided nonvolatile memory cell NAND flash array |
JP4975794B2 (ja) | 2009-09-16 | 2012-07-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US8009478B2 (en) | 2009-10-05 | 2011-08-30 | Micron Technology, Inc. | Non-volatile memory apparatus and methods |
KR101842507B1 (ko) | 2011-10-06 | 2018-03-28 | 삼성전자주식회사 | 불휘발성 메모리의 동작 방법 및 불휘발성 메모리를 제어하는 방법 |
US10170187B2 (en) * | 2012-04-02 | 2019-01-01 | Micron Technology, Inc. | Apparatuses and methods using negative voltages in part of memory write read, and erase operations |
US8891299B2 (en) * | 2012-08-09 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOSFET having memory characteristics |
US9099202B2 (en) * | 2012-11-06 | 2015-08-04 | Sandisk Technologies Inc. | 3D stacked non-volatile storage programming to conductive state |
US9413349B1 (en) | 2015-04-01 | 2016-08-09 | Qualcomm Incorporated | High-K (HK)/metal gate (MG) (HK/MG) multi-time programmable (MTP) switching devices, and related systems and methods |
US10026487B2 (en) | 2016-06-03 | 2018-07-17 | Sandisk Technologies Llc | Non-volatile memory with customized control of injection type of disturb during program verify for improved program performance |
US9747992B1 (en) * | 2016-06-03 | 2017-08-29 | Sandisk Technologies Llc | Non-volatile memory with customized control of injection type of disturb during read operations |
Family Cites Families (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939690A (en) | 1987-12-28 | 1990-07-03 | Kabushiki Kaisha Toshiba | Electrically erasable programmable read-only memory with NAND cell structure that suppresses memory cell threshold voltage variation |
JPH02177477A (ja) * | 1988-12-28 | 1990-07-10 | Oki Electric Ind Co Ltd | Mos型半導体記憶装置の読出し・書込み方法 |
US4936690A (en) * | 1989-05-31 | 1990-06-26 | Rosemount Inc. | Thermocouple transmitter with cold junction compensation |
JP3004043B2 (ja) * | 1990-10-23 | 2000-01-31 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
EP0488677A3 (en) | 1990-11-29 | 1992-08-26 | Kawasaki Steel Corporation | Semiconductor device of band-to-band tunneling type |
US5617357A (en) * | 1995-04-07 | 1997-04-01 | Advanced Micro Devices, Inc. | Flash EEPROM memory with improved discharge speed using substrate bias and method therefor |
JP2937805B2 (ja) * | 1995-05-19 | 1999-08-23 | モトローラ株式会社 | 2層フローティングゲート構造のマルチビット対応セルを有する不揮発性メモリ及びそのプログラム/消去/読出方法 |
JP2838993B2 (ja) * | 1995-11-29 | 1998-12-16 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5814853A (en) | 1996-01-22 | 1998-09-29 | Advanced Micro Devices, Inc. | Sourceless floating gate memory device and method of storing data |
JPH09251790A (ja) * | 1996-03-18 | 1997-09-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
JP3489958B2 (ja) * | 1997-03-19 | 2004-01-26 | 富士通株式会社 | 不揮発性半導体記憶装置 |
JP3481817B2 (ja) * | 1997-04-07 | 2003-12-22 | 株式会社東芝 | 半導体記憶装置 |
JP4157189B2 (ja) * | 1997-05-14 | 2008-09-24 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
KR100257765B1 (ko) * | 1997-12-30 | 2000-06-01 | 김영환 | 기억소자 및 그 제조 방법 |
JP3173456B2 (ja) * | 1998-03-19 | 2001-06-04 | 日本電気株式会社 | 半導体記憶装置 |
JP3629144B2 (ja) * | 1998-06-01 | 2005-03-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP3241330B2 (ja) | 1998-10-08 | 2001-12-25 | 日本電気株式会社 | フラッシュメモリおよびその製造方法 |
JP3829161B2 (ja) * | 1999-10-14 | 2006-10-04 | スパンション インク | 多ビット情報を記録する不揮発性メモリ回路 |
US6160286A (en) | 1999-10-20 | 2000-12-12 | Worldwide Semiconductor Manufacturing Corporation | Method for operation of a flash memory using n+/p-well diode |
JP3913952B2 (ja) * | 1999-12-28 | 2007-05-09 | 株式会社東芝 | 半導体記憶装置 |
JP2001291385A (ja) * | 2000-04-05 | 2001-10-19 | Nec Corp | 半導体記憶装置並びにその試験装置および試験方法 |
US6240015B1 (en) * | 2000-04-07 | 2001-05-29 | Taiwan Semiconductor Manufacturing Corporation | Method for reading 2-bit ETOX cells using gate induced drain leakage current |
JP2002026154A (ja) * | 2000-07-11 | 2002-01-25 | Sanyo Electric Co Ltd | 半導体メモリおよび半導体装置 |
US6288943B1 (en) * | 2000-07-12 | 2001-09-11 | Taiwan Semiconductor Manufacturing Corporation | Method for programming and reading 2-bit p-channel ETOX-cells with non-connecting HSG islands as floating gate |
US6441428B1 (en) * | 2001-03-19 | 2002-08-27 | Micron Technology, Inc. | One-sided floating-gate memory cell |
US6731544B2 (en) | 2001-05-14 | 2004-05-04 | Nexflash Technologies, Inc. | Method and apparatus for multiple byte or page mode programming of a flash memory array |
JP2003163292A (ja) * | 2001-08-13 | 2003-06-06 | Halo Lsi Inc | ツインnand素子構造、そのアレイ動作およびその製造方法 |
US7177197B2 (en) * | 2001-09-17 | 2007-02-13 | Sandisk Corporation | Latched programming of memory and method |
US6510082B1 (en) | 2001-10-23 | 2003-01-21 | Advanced Micro Devices, Inc. | Drain side sensing scheme for virtual ground flash EPROM array with adjacent bit charge and hold |
US6897522B2 (en) * | 2001-10-31 | 2005-05-24 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6925007B2 (en) * | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
JP2003152115A (ja) * | 2001-11-16 | 2003-05-23 | Ememory Technology Inc | 嵌入式フラッシュメモリ構造及び操作方法 |
US6844588B2 (en) * | 2001-12-19 | 2005-01-18 | Freescale Semiconductor, Inc. | Non-volatile memory |
JP4071967B2 (ja) * | 2002-01-17 | 2008-04-02 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置及びそのデータ消去方法 |
US6873004B1 (en) | 2002-02-04 | 2005-03-29 | Nexflash Technologies, Inc. | Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof |
JP3738838B2 (ja) * | 2002-02-13 | 2006-01-25 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
US6646914B1 (en) * | 2002-03-12 | 2003-11-11 | Advanced Micro Devices, Inc. | Flash memory array architecture having staggered metal lines |
US6657894B2 (en) | 2002-03-29 | 2003-12-02 | Macronix International Co., Ltd, | Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cells |
US6690601B2 (en) | 2002-03-29 | 2004-02-10 | Macronix International Co., Ltd. | Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the same |
US6801453B2 (en) * | 2002-04-02 | 2004-10-05 | Macronix International Co., Ltd. | Method and apparatus of a read scheme for non-volatile memory |
US6747896B2 (en) * | 2002-05-06 | 2004-06-08 | Multi Level Memory Technology | Bi-directional floating gate nonvolatile memory |
US6804151B2 (en) * | 2002-05-15 | 2004-10-12 | Fujitsu Limited | Nonvolatile semiconductor memory device of virtual-ground memory array with reliable data reading |
US6826080B2 (en) | 2002-05-24 | 2004-11-30 | Nexflash Technologies, Inc. | Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure therefor |
EP1376676A3 (de) * | 2002-06-24 | 2008-08-20 | Interuniversitair Microelektronica Centrum Vzw | Multibit-Festwertspeicherbauelement und Verfahren |
US6771543B2 (en) | 2002-08-22 | 2004-08-03 | Advanced Micro Devices, Inc. | Precharging scheme for reading a memory cell |
US6649971B1 (en) * | 2002-08-28 | 2003-11-18 | Macronix International Co., Ltd. | Nitride read-only memory cell for improving second-bit effect and method for making thereof |
US6808986B2 (en) | 2002-08-30 | 2004-10-26 | Freescale Semiconductor, Inc. | Method of forming nanocrystals in a memory device |
TWI244165B (en) * | 2002-10-07 | 2005-11-21 | Infineon Technologies Ag | Single bit nonvolatile memory cell and methods for programming and erasing thereof |
US6639836B1 (en) | 2002-10-31 | 2003-10-28 | Powerchip Semiconductor Corp. | Method for reading flash memory with silicon-oxide/nitride/oxide-silicon (SONOS) structure |
US7016225B2 (en) * | 2002-11-26 | 2006-03-21 | Tower Semiconductor Ltd. | Four-bit non-volatile memory transistor and array |
US7505321B2 (en) * | 2002-12-31 | 2009-03-17 | Sandisk 3D Llc | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same |
JP4104151B2 (ja) * | 2003-04-28 | 2008-06-18 | スパンション エルエルシー | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置のプログラム方法 |
US6816414B1 (en) * | 2003-07-31 | 2004-11-09 | Freescale Semiconductor, Inc. | Nonvolatile memory and method of making same |
US7072217B2 (en) * | 2004-02-24 | 2006-07-04 | Micron Technology, Inc. | Multi-state memory cell with asymmetric charge trapping |
US7327607B2 (en) * | 2004-09-09 | 2008-02-05 | Macronix International Co., Ltd. | Method and apparatus for operating nonvolatile memory cells in a series arrangement |
-
2004
- 2004-10-26 US US10/973,176 patent/US7170785B2/en active Active
- 2004-12-13 TW TW093138538A patent/TWI250527B/zh active
-
2005
- 2005-01-03 DE DE602005016759T patent/DE602005016759D1/de active Active
- 2005-01-03 EP EP05000018A patent/EP1638110B1/de not_active Expired - Fee Related
- 2005-06-22 JP JP2005182630A patent/JP4800683B2/ja not_active Expired - Fee Related
-
2006
- 2006-11-14 US US11/559,846 patent/US7366024B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20060049448A1 (en) | 2006-03-09 |
EP1638110A1 (de) | 2006-03-22 |
US7366024B2 (en) | 2008-04-29 |
US20070069284A1 (en) | 2007-03-29 |
TW200609944A (en) | 2006-03-16 |
JP4800683B2 (ja) | 2011-10-26 |
JP2006079802A (ja) | 2006-03-23 |
EP1638110B1 (de) | 2009-09-23 |
TWI250527B (en) | 2006-03-01 |
US7170785B2 (en) | 2007-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE602005016759D1 (de) | Verfahren und Vorrichtung zum Betreiben einer Kette von Ladungshaftstellen-Speicherzellen | |
DE60302275D1 (de) | Verfahren und Vorrichtung zum mischen von Gasen | |
DE602006021122D1 (de) | Vorrichtung und Verfahren zum automatischen Setzen von Verriegelungen zwischen Robotern | |
DE502004012435D1 (de) | Verfahren und Vorrichtung zum Steuern einer Mehrzahl von Handhabungsgeräten | |
DE60216640D1 (de) | Verfahren und vorrichtung zum selbständigen glätten | |
DE602005012917D1 (de) | Verfahren und Vorrichtung zum Umformen | |
DE112006004263A5 (de) | Verfahren und Vorrichtung zum Stapeln von DRAMS | |
DE602005017318D1 (de) | Verfahren und Vorrichtung zum Bereitstellen von Entwurfsdaten | |
DE60333924D1 (de) | Verfahren und vorrichtung zum erwärmen von vliesstoffbahnen | |
DE602006004270D1 (de) | Vorrichtung und Verfahren zum Zuführen von Verbindungselementen zu einer Setzvorrichtung | |
DE602005011934D1 (de) | Vorrichtung zum Einfangen von Kügelchen und Verfahren und Vorrichtung zum Anordnen von Kügelchen | |
DE60308789D1 (de) | Verfahren und Vorrichtung zum hydraulischen Umformen | |
DE502005007750D1 (de) | Vorrichtung zum magnetischen ergreifen von werkstücken und verfahren zum betreiben einer derartigen vorrichtung | |
DE502005010348D1 (de) | Verfahren und werkzeugeinrichtung zum umformen | |
DE502005001279D1 (de) | Verfahren und Vorrichtung zum automatischen Anfahren | |
DE102005033305A8 (de) | Werkzeug und Verfahren zum Bearbeiten von Geröll | |
DE602004006339D1 (de) | Verfahren und Vorrichtung zum Aufbauen von Rohreifen | |
DE502005003839D1 (de) | Verfahren und vorrichtung zum aufwickeln mehrerer fäden | |
DE602005000770D1 (de) | Verfahren und Einrichtung zum Recycling von Inertgasen | |
DE502005004187D1 (de) | Verfahren und einrichtung zum stapeln von flachen sendungen | |
DE60318432D1 (de) | Verfahren und vorrichtungen zum umsetzen von farbwerten | |
DE502004007082D1 (de) | Verfahren und vorrichtung zum verbrennen von brennstoff | |
DE60306215D1 (de) | Verfahren und Vorrichtung zum superplastischen Verformen | |
DE602005003378D1 (de) | Vorrichtung und Verfahren zum Biegen von Profilen | |
DE60325804D1 (de) | Verfahren und Vorrichtung zum Drucken |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |