DE602004007865D1 - Integrierte Halbleiterschaltung mit Temperaturdetektor - Google Patents
Integrierte Halbleiterschaltung mit TemperaturdetektorInfo
- Publication number
- DE602004007865D1 DE602004007865D1 DE602004007865T DE602004007865T DE602004007865D1 DE 602004007865 D1 DE602004007865 D1 DE 602004007865D1 DE 602004007865 T DE602004007865 T DE 602004007865T DE 602004007865 T DE602004007865 T DE 602004007865T DE 602004007865 D1 DE602004007865 D1 DE 602004007865D1
- Authority
- DE
- Germany
- Prior art keywords
- temperature detector
- semiconductor circuit
- integrated semiconductor
- integrated
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40626—Temperature related aspects of refresh operations
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/401—Indexing scheme relating to cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C2211/406—Refreshing of dynamic cells
- G11C2211/4067—Refresh in standby or low power modes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003375276 | 2003-11-05 | ||
JP2003375276 | 2003-11-05 | ||
JP2004187938A JP4477429B2 (ja) | 2003-11-05 | 2004-06-25 | 半導体集積回路 |
JP2004187938 | 2004-06-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602004007865D1 true DE602004007865D1 (de) | 2007-09-13 |
DE602004007865T2 DE602004007865T2 (de) | 2007-12-20 |
Family
ID=34436952
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004007865T Active DE602004007865T2 (de) | 2003-11-05 | 2004-11-04 | Integrierte Halbleiterschaltung mit Temperaturdetektor |
Country Status (5)
Country | Link |
---|---|
US (3) | US7149644B2 (de) |
EP (1) | EP1530218B1 (de) |
JP (1) | JP4477429B2 (de) |
CN (1) | CN1331229C (de) |
DE (1) | DE602004007865T2 (de) |
Families Citing this family (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20050118952A (ko) * | 2004-06-15 | 2005-12-20 | 삼성전자주식회사 | 히스테리리스 특성을 갖는 온도 감지 회로 |
KR100610011B1 (ko) * | 2004-07-29 | 2006-08-09 | 삼성전자주식회사 | 셀프 리프레쉬 주기 제어회로 |
JP4838518B2 (ja) * | 2005-02-22 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体記憶装置 |
US7532532B2 (en) | 2005-05-31 | 2009-05-12 | Micron Technology, Inc. | System and method for hidden-refresh rate modification |
CN100449901C (zh) * | 2005-09-22 | 2009-01-07 | 华为技术有限公司 | 一种防止设备内部燃烧向外蔓延的装置 |
KR100791918B1 (ko) * | 2006-05-08 | 2008-01-04 | 삼성전자주식회사 | 셀프 보정 기능을 가지는 온도 센서 회로 및 그 방법 |
JP4850578B2 (ja) * | 2006-05-19 | 2012-01-11 | 富士通セミコンダクター株式会社 | 半導体記憶装置及びリフレッシュ周期制御方法 |
KR100832029B1 (ko) * | 2006-09-28 | 2008-05-26 | 주식회사 하이닉스반도체 | 온도 정보 출력 장치 및 그를 갖는 반도체 소자 |
KR100834403B1 (ko) * | 2007-01-03 | 2008-06-04 | 주식회사 하이닉스반도체 | 안정적인 셀프리프레쉬 동작을 수행하는 메모리장치 및셀프리프레쉬주기 제어신호 생성방법 |
US9041241B2 (en) | 2007-05-07 | 2015-05-26 | Analogix Semiconductor, Inc. | Systems and methods for powering a charging circuit of a communications interface |
US8175555B2 (en) | 2007-05-07 | 2012-05-08 | Analogix Semiconductor, Inc. | Apparatus and method for termination powered differential interface periphery |
US8035359B2 (en) | 2007-05-07 | 2011-10-11 | Analogix Semiconductor, Inc. | Apparatus and method for recovery of wasted power from differential drivers |
US8063504B2 (en) | 2007-05-07 | 2011-11-22 | Analogix Semiconductor, Inc. | Systems and methods for powering circuits for a communications interface |
JP5212370B2 (ja) * | 2007-07-12 | 2013-06-19 | 富士通セミコンダクター株式会社 | 半導体装置 |
JP5006739B2 (ja) * | 2007-09-10 | 2012-08-22 | 株式会社リコー | 温度検出回路およびそれを用いた電子機器 |
TW200912265A (en) * | 2007-09-12 | 2009-03-16 | Unisense Technology Co Ltd | Adjustment method and adjustment system for temperature sensing component |
US8559148B2 (en) | 2007-12-27 | 2013-10-15 | Namik Yilmaz | Safety circuit for a household appliance |
US7876135B2 (en) * | 2008-02-29 | 2011-01-25 | Spectra Linear, Inc. | Power-on reset circuit |
JP5303985B2 (ja) * | 2008-03-27 | 2013-10-02 | 富士通セミコンダクター株式会社 | 半導体記憶装置、半導体記憶装置の動作方法およびメモリシステム |
US8449173B1 (en) * | 2008-04-10 | 2013-05-28 | Google Inc. | Method and system for thermal testing of computing system components |
US8552791B2 (en) * | 2008-09-23 | 2013-10-08 | Decicon, Inc. | Protected power switch with low current consumption |
JP5498047B2 (ja) * | 2009-04-01 | 2014-05-21 | 株式会社東芝 | 半導体集積回路 |
JP2011170943A (ja) | 2010-02-22 | 2011-09-01 | Sony Corp | 記憶制御装置、記憶装置、記憶装置システム |
JP5738141B2 (ja) * | 2011-09-20 | 2015-06-17 | ルネサスエレクトロニクス株式会社 | 半導体装置及び温度センサシステム |
CN103544987B (zh) * | 2012-07-09 | 2016-04-27 | 晶豪科技股份有限公司 | 具有自我更新时序电路的半导体存储器元件 |
JP6101047B2 (ja) * | 2012-11-07 | 2017-03-22 | キヤノン株式会社 | 情報処理装置及びその制御方法、並びにプログラム |
JP2014098978A (ja) * | 2012-11-13 | 2014-05-29 | Sony Corp | メモリ制御装置、メモリシステム、情報処理システムおよびメモリ制御方法 |
US9147461B1 (en) | 2012-11-28 | 2015-09-29 | Samsung Electronics Co., Ltd. | Semiconductor memory device performing a refresh operation, and memory system including the same |
KR102254098B1 (ko) * | 2014-11-20 | 2021-05-20 | 삼성전자주식회사 | 온도를 센싱할 수 있는 반도체 칩, 및 상기 반도체 칩을 포함하는 반도체 시스템 |
US9999025B2 (en) * | 2016-03-08 | 2018-06-12 | Verily Life Sciences Llc | Beacon using an FBAR-based oscillator |
US10770966B2 (en) | 2016-04-15 | 2020-09-08 | Emerson Climate Technologies, Inc. | Power factor correction circuit and method including dual bridge rectifiers |
US10656026B2 (en) | 2016-04-15 | 2020-05-19 | Emerson Climate Technologies, Inc. | Temperature sensing circuit for transmitting data across isolation barrier |
US10305373B2 (en) | 2016-04-15 | 2019-05-28 | Emerson Climate Technologies, Inc. | Input reference signal generation systems and methods |
US10763740B2 (en) | 2016-04-15 | 2020-09-01 | Emerson Climate Technologies, Inc. | Switch off time control systems and methods |
US10277115B2 (en) | 2016-04-15 | 2019-04-30 | Emerson Climate Technologies, Inc. | Filtering systems and methods for voltage control |
US9933842B2 (en) | 2016-04-15 | 2018-04-03 | Emerson Climate Technologies, Inc. | Microcontroller architecture for power factor correction converter |
US10320322B2 (en) | 2016-04-15 | 2019-06-11 | Emerson Climate Technologies, Inc. | Switch actuation measurement circuit for voltage converter |
US10212657B2 (en) | 2016-04-27 | 2019-02-19 | Verily Life Sciences Llc | Bluetooth low energy beacon with FBAR-based oscillator-per-channel |
US10097387B1 (en) | 2016-08-15 | 2018-10-09 | Verily Life Sciences Llc | Temperature-stable FBAR transmitter |
JP2019101515A (ja) * | 2017-11-29 | 2019-06-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその電源監視方法 |
US10497423B1 (en) * | 2018-05-14 | 2019-12-03 | Nanya Technology Corporation | Frequency-adjusting circuit, electronic memory, and method for determining a refresh frequency for a plurality of dram chips |
KR20200065703A (ko) * | 2018-11-30 | 2020-06-09 | 에스케이하이닉스 주식회사 | 메모리 시스템 |
CN113870917B (zh) * | 2020-06-30 | 2023-09-12 | 长鑫存储技术有限公司 | 半导体装置 |
JP2022035175A (ja) * | 2020-08-20 | 2022-03-04 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4730228A (en) * | 1986-03-21 | 1988-03-08 | Siemens Aktiengesellschaft | Overtemperature detection of power semiconductor components |
JP2521783B2 (ja) * | 1987-09-28 | 1996-08-07 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JPH03207084A (ja) | 1990-01-08 | 1991-09-10 | Nec Corp | ダイナミック型半導体メモリ |
US5278796A (en) * | 1991-04-12 | 1994-01-11 | Micron Technology, Inc. | Temperature-dependent DRAM refresh circuit |
JP3186276B2 (ja) * | 1992-01-21 | 2001-07-11 | 松下電器産業株式会社 | 温度検知回路およびダイナミック・ランダムアクセス・メモリ装置 |
JPH07141865A (ja) * | 1993-06-28 | 1995-06-02 | Mitsubishi Electric Corp | 発振回路および半導体記憶装置 |
KR950010624B1 (ko) * | 1993-07-14 | 1995-09-20 | 삼성전자주식회사 | 반도체 메모리장치의 셀프리프레시 주기조절회로 |
JP3637181B2 (ja) * | 1997-05-09 | 2005-04-13 | 株式会社東芝 | コンピュータシステムおよびそのクーリング制御方法 |
US5875142A (en) * | 1997-06-17 | 1999-02-23 | Micron Technology, Inc. | Integrated circuit with temperature detector |
US6134167A (en) * | 1998-06-04 | 2000-10-17 | Compaq Computer Corporation | Reducing power consumption in computer memory |
US6281760B1 (en) * | 1998-07-23 | 2001-08-28 | Texas Instruments Incorporated | On-chip temperature sensor and oscillator for reduced self-refresh current for dynamic random access memory |
DE69933670D1 (de) * | 1999-08-31 | 2006-11-30 | St Microelectronics Srl | Temperaturfühler in Cmos-Technologie |
JP2001332082A (ja) | 2000-05-18 | 2001-11-30 | Nec Corp | 強誘電体メモリ |
JP4021643B2 (ja) * | 2001-10-29 | 2007-12-12 | 富士通株式会社 | 温度検出機能を備えた半導体装置 |
FR2834343B1 (fr) * | 2001-12-28 | 2004-04-09 | St Microelectronics Sa | Detecteur thermique |
US6921199B2 (en) * | 2002-03-22 | 2005-07-26 | Ricoh Company, Ltd. | Temperature sensor |
JP4363871B2 (ja) * | 2003-03-19 | 2009-11-11 | Okiセミコンダクタ株式会社 | 半導体装置 |
CN100487816C (zh) * | 2003-04-23 | 2009-05-13 | 富士通微电子株式会社 | 半导体存储装置及其刷新方法 |
US7027343B2 (en) * | 2003-09-22 | 2006-04-11 | Micron Technology | Method and apparatus for controlling refresh operations in a dynamic memory device |
JP4237109B2 (ja) * | 2004-06-18 | 2009-03-11 | エルピーダメモリ株式会社 | 半導体記憶装置及びリフレッシュ周期制御方法 |
-
2004
- 2004-06-25 JP JP2004187938A patent/JP4477429B2/ja not_active Expired - Fee Related
- 2004-10-26 CN CNB2004100809900A patent/CN1331229C/zh not_active Expired - Fee Related
- 2004-11-04 US US10/980,293 patent/US7149644B2/en active Active
- 2004-11-04 DE DE602004007865T patent/DE602004007865T2/de active Active
- 2004-11-04 EP EP04026152A patent/EP1530218B1/de not_active Expired - Fee Related
-
2006
- 2006-10-30 US US11/589,068 patent/US7532996B2/en active Active
-
2009
- 2009-04-20 US US12/426,584 patent/US7844411B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1530218A2 (de) | 2005-05-11 |
US20050093618A1 (en) | 2005-05-05 |
US7532996B2 (en) | 2009-05-12 |
US7149644B2 (en) | 2006-12-12 |
US20070043522A1 (en) | 2007-02-22 |
CN1614781A (zh) | 2005-05-11 |
US7844411B2 (en) | 2010-11-30 |
EP1530218B1 (de) | 2007-08-01 |
US20090204358A1 (en) | 2009-08-13 |
JP2005158222A (ja) | 2005-06-16 |
EP1530218A3 (de) | 2005-08-31 |
CN1331229C (zh) | 2007-08-08 |
JP4477429B2 (ja) | 2010-06-09 |
DE602004007865T2 (de) | 2007-12-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |