DE60136884D1 - Verfahren zur Herstellung von Siliziumkarbid, sowie Siliziumkarbid, Verbundwerkstoff und Halbleiterbauelement - Google Patents

Verfahren zur Herstellung von Siliziumkarbid, sowie Siliziumkarbid, Verbundwerkstoff und Halbleiterbauelement

Info

Publication number
DE60136884D1
DE60136884D1 DE60136884T DE60136884T DE60136884D1 DE 60136884 D1 DE60136884 D1 DE 60136884D1 DE 60136884 T DE60136884 T DE 60136884T DE 60136884 T DE60136884 T DE 60136884T DE 60136884 D1 DE60136884 D1 DE 60136884D1
Authority
DE
Germany
Prior art keywords
silicon carbide
composite
semiconductor device
producing
producing silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60136884T
Other languages
English (en)
Inventor
Hiroyuki Nagasawa
Takamitsu Kawahara
Kuniaki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Application granted granted Critical
Publication of DE60136884D1 publication Critical patent/DE60136884D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DE60136884T 2000-05-31 2001-05-31 Verfahren zur Herstellung von Siliziumkarbid, sowie Siliziumkarbid, Verbundwerkstoff und Halbleiterbauelement Expired - Lifetime DE60136884D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000162048A JP3707726B2 (ja) 2000-05-31 2000-05-31 炭化珪素の製造方法、複合材料の製造方法

Publications (1)

Publication Number Publication Date
DE60136884D1 true DE60136884D1 (de) 2009-01-22

Family

ID=18665988

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60136884T Expired - Lifetime DE60136884D1 (de) 2000-05-31 2001-05-31 Verfahren zur Herstellung von Siliziumkarbid, sowie Siliziumkarbid, Verbundwerkstoff und Halbleiterbauelement

Country Status (4)

Country Link
US (1) US6821340B2 (de)
EP (1) EP1160361B1 (de)
JP (1) JP3707726B2 (de)
DE (1) DE60136884D1 (de)

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JP2003068654A (ja) 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法
JP2003095798A (ja) * 2001-09-27 2003-04-03 Hoya Corp 単結晶基板の製造方法
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US20070169687A1 (en) * 2006-01-26 2007-07-26 Caracal, Inc. Silicon carbide formation by alternating pulses
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JP5064094B2 (ja) * 2007-04-16 2012-10-31 パナソニック株式会社 半導体記憶装置およびその製造方法
US8603243B2 (en) * 2008-07-31 2013-12-10 The United States Of America, As Represented By The Secretary Of The Navy Tracking carbon to silicon ratio in situ during silicon carbide growth
US8189364B2 (en) 2008-12-17 2012-05-29 Qs Semiconductor Australia Pty Ltd. Charge retention structures and techniques for implementing charge controlled resistors in memory cells and arrays of memory
US20110042686A1 (en) * 2009-08-18 2011-02-24 Qs Semiconductor Australia Pty Ltd. Substrates and methods of fabricating doped epitaxial silicon carbide structures with sequential emphasis
US20110042685A1 (en) * 2009-08-18 2011-02-24 Qs Semiconductor Australia Pty Ltd Substrates and methods of fabricating epitaxial silicon carbide structures with sequential emphasis
JP5345499B2 (ja) * 2009-10-15 2013-11-20 Ｈｏｙａ株式会社 化合物単結晶およびその製造方法
JP2011100890A (ja) * 2009-11-06 2011-05-19 Kansai Electric Power Co Inc:The ＳｉＣ結晶成長層の製造方法およびバイポーラ型半導体素子
JP5353800B2 (ja) * 2010-04-07 2013-11-27 新日鐵住金株式会社 炭化珪素エピタキシャル膜の製造方法
US20110272707A1 (en) * 2010-05-06 2011-11-10 Qs Semiconductor Australia Pty Ltd Substrates and methods of forming film structures to facilitate silicon carbide epitaxy
JP5720140B2 (ja) * 2010-08-13 2015-05-20 セイコーエプソン株式会社 立方晶炭化ケイ素膜の製造方法及び立方晶炭化ケイ素膜付き基板の製造方法
CN102723406B (zh) * 2011-03-29 2017-07-07 清华大学 半导体外延结构
US8394712B2 (en) * 2011-05-05 2013-03-12 International Business Machines Corporation Cavity-free interface between extension regions and embedded silicon-carbon alloy source/drain regions
JP2013060328A (ja) * 2011-09-14 2013-04-04 Sumitomo Electric Ind Ltd 炭化珪素結晶の製造方法
ITMI20112273A1 (it) * 2011-12-15 2013-06-16 St Microelectronics Srl Metodo per la produzione di una fetta di carburo di silicio e relativa attrezzatura
KR20130076365A (ko) * 2011-12-28 2013-07-08 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 제조 방법 및 탄화규소 에피 웨이퍼
US11721547B2 (en) * 2013-03-14 2023-08-08 Infineon Technologies Ag Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device
KR102203025B1 (ko) 2014-08-06 2021-01-14 엘지이노텍 주식회사 탄화규소 에피 웨이퍼 제조 방법
EP3325695A1 (de) * 2015-07-23 2018-05-30 The University Of Warwick Züchtung von epitaktischem 3c-sic auf monokristallinem silicium
US10475673B2 (en) 2016-09-28 2019-11-12 Stmicroelectronics S.R.L. Apparatus for manufacturing a silicon carbide wafer
US11177123B2 (en) * 2017-02-16 2021-11-16 Shin-Etsu Chemical Co., Ltd. Compound semiconductor laminate substrate, method for manufacturing same, and semiconductor element
JP6702268B2 (ja) * 2017-06-15 2020-05-27 信越半導体株式会社 エピタキシャルウェーハの製造方法
US11309177B2 (en) 2018-11-06 2022-04-19 Stmicroelectronics S.R.L. Apparatus and method for manufacturing a wafer
IT201900015416A1 (it) 2019-09-03 2021-03-03 St Microelectronics Srl Apparecchio per la crescita di una fetta di materiale semiconduttore, in particolare di carburo di silicio, e procedimento di fabbricazione associato
CN110541199B (zh) * 2019-10-11 2020-07-31 山东大学 一种直径8英寸及以上尺寸高质量SiC籽晶的制备方法
CN115074825A (zh) * 2022-06-10 2022-09-20 厦门紫硅半导体科技有限公司 碳化硅外延结构、脉冲式生长方法及其应用

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Also Published As

Publication number Publication date
JP2001335935A (ja) 2001-12-07
JP3707726B2 (ja) 2005-10-19
US6821340B2 (en) 2004-11-23
EP1160361A1 (de) 2001-12-05
US20020072249A1 (en) 2002-06-13
EP1160361B1 (de) 2008-12-10

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