DE60144416D1 - Verfahren zur bestimmung unter welchen konditionen der siliziumeinkristall hergestellt wurde und verfahren zur herstellung des siliziumwafers - Google Patents

Verfahren zur bestimmung unter welchen konditionen der siliziumeinkristall hergestellt wurde und verfahren zur herstellung des siliziumwafers

Info

Publication number
DE60144416D1
DE60144416D1 DE60144416T DE60144416T DE60144416D1 DE 60144416 D1 DE60144416 D1 DE 60144416D1 DE 60144416 T DE60144416 T DE 60144416T DE 60144416 T DE60144416 T DE 60144416T DE 60144416 D1 DE60144416 D1 DE 60144416D1
Authority
DE
Germany
Prior art keywords
silicon
incredient
producing
conditions
determining under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60144416T
Other languages
English (en)
Inventor
Makoto Iida
Masanori Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE60144416D1 publication Critical patent/DE60144416D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N2033/0095—Semiconductive materials
DE60144416T 2000-01-25 2001-01-18 Verfahren zur bestimmung unter welchen konditionen der siliziumeinkristall hergestellt wurde und verfahren zur herstellung des siliziumwafers Expired - Lifetime DE60144416D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000015537 2000-01-25
PCT/JP2001/000302 WO2001055485A1 (fr) 2000-01-25 2001-01-18 Plaquette de silicium, procede de determination de la condition dans laquelle est produit un monocristal de silicium et procede de production d'une plaquette de silicium

Publications (1)

Publication Number Publication Date
DE60144416D1 true DE60144416D1 (de) 2011-05-26

Family

ID=18542817

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60144416T Expired - Lifetime DE60144416D1 (de) 2000-01-25 2001-01-18 Verfahren zur bestimmung unter welchen konditionen der siliziumeinkristall hergestellt wurde und verfahren zur herstellung des siliziumwafers

Country Status (7)

Country Link
US (1) US6599360B2 (de)
EP (1) EP1195455B1 (de)
JP (1) JP3565205B2 (de)
KR (1) KR100781728B1 (de)
DE (1) DE60144416D1 (de)
TW (1) TW512465B (de)
WO (1) WO2001055485A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001278692A (ja) * 2000-03-29 2001-10-10 Shin Etsu Handotai Co Ltd シリコンウエーハおよびシリコン単結晶の製造方法
KR100543252B1 (ko) * 2001-05-29 2006-01-20 신닛뽄세이테쯔 카부시키카이샤 Ｓｏｉ 기판
JP2003002785A (ja) 2001-06-15 2003-01-08 Shin Etsu Handotai Co Ltd 表層部にボイド無欠陥層を有する直径３００ｍｍ以上のシリコン単結晶ウエーハおよびその製造方法
JP2003059932A (ja) 2001-08-08 2003-02-28 Toshiba Ceramics Co Ltd シリコン単結晶ウエハの製造方法およびシリコン単結晶ウエハ
KR100973393B1 (ko) * 2001-12-21 2010-07-30 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 질소/탄소 안정화된 산소 침전물 핵형성 중심을 가진 이상적인 산소 침전 실리콘 웨이퍼
JP4196602B2 (ja) * 2002-07-12 2008-12-17 信越半導体株式会社 エピタキシャル成長用シリコンウエーハ及びエピタキシャルウエーハ並びにその製造方法
KR100743821B1 (ko) * 2003-02-25 2007-07-30 가부시키가이샤 섬코 실리콘 단결정 육성 방법, 실리콘 웨이퍼 제조 방법 및 ｓｏｉ 기판 제조 방법
KR100573473B1 (ko) * 2004-05-10 2006-04-24 주식회사 실트론 실리콘 웨이퍼 및 그 제조방법
JP2006054350A (ja) * 2004-08-12 2006-02-23 Komatsu Electronic Metals Co Ltd 窒素ドープシリコンウェーハとその製造方法
KR100693917B1 (ko) * 2004-12-31 2007-03-12 주식회사 실트론 실리콘 단결정
JP2006273631A (ja) 2005-03-28 2006-10-12 Komatsu Electronic Metals Co Ltd シリコン単結晶の製造方法およびアニールウェーハおよびアニールウェーハの製造方法
JP4604889B2 (ja) * 2005-05-25 2011-01-05 株式会社Ｓｕｍｃｏ シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
DE102005028202B4 (de) * 2005-06-17 2010-04-15 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben aus Silizium
JP5121139B2 (ja) * 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
JP4805681B2 (ja) * 2006-01-12 2011-11-02 ジルトロニック アクチエンゲゼルシャフト エピタキシャルウェーハおよびエピタキシャルウェーハの製造方法
US20090206275A1 (en) * 2007-10-03 2009-08-20 Silcon Genesis Corporation Accelerator particle beam apparatus and method for low contaminate processing
JP4862857B2 (ja) * 2008-05-02 2012-01-25 信越半導体株式会社 シリコン単結晶ウェーハ評価用の標準サンプル、その製造方法及び標準サンプルを用いた評価方法
JP5346744B2 (ja) * 2008-12-26 2013-11-20 ジルトロニック アクチエンゲゼルシャフト シリコンウエハ及びその製造方法
JP5678846B2 (ja) * 2011-09-08 2015-03-04 信越半導体株式会社 シリコン単結晶中窒素濃度算出方法および抵抗シフト量算出方法
FR3055563B1 (fr) * 2016-09-08 2018-09-14 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de tri de plaquettes en silicium en fonction de leur duree de vie volumique
JP6971622B2 (ja) * 2017-05-10 2021-11-24 グローバルウェーハズ・ジャパン株式会社 半導体ウェハの製造方法及び半導体ウェハ
JP7247879B2 (ja) * 2019-12-20 2023-03-29 株式会社Sumco 単結晶シリコンウェーハの酸化膜耐圧の評価方法
JP2022129531A (ja) * 2021-02-25 2022-09-06 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの製造方法およびシリコンウェーハ
CN113897671B (zh) * 2021-09-30 2023-05-05 西安奕斯伟材料科技股份有限公司 一种氮掺杂单晶硅棒的制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06103714B2 (ja) 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JP3085146B2 (ja) * 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JP4041182B2 (ja) * 1997-01-27 2008-01-30 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 熱処理用シリコンウェーハ及びその製造方法
JP3747123B2 (ja) * 1997-11-21 2006-02-22 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ
JP3955674B2 (ja) * 1998-03-19 2007-08-08 株式会社東芝 半導体ウェーハの製造方法及び半導体装置の製造方法
DE19823962A1 (de) * 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Einkristalls
JP3943717B2 (ja) * 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
JP3601324B2 (ja) * 1998-11-19 2004-12-15 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶ウエーハ及びその製造方法
EP1127962B1 (de) * 1999-08-30 2003-12-10 Shin-Etsu Handotai Co., Ltd Verfahren zur herstellung eines siliziumeinkristalls damit hergestellter siliziumeinkristall und siliziumwafer
JP5625533B2 (ja) * 2010-06-22 2014-11-19 トヨタ自動車株式会社 内燃機関の制御装置

Also Published As

Publication number Publication date
EP1195455A4 (de) 2008-02-13
JP3565205B2 (ja) 2004-09-15
EP1195455B1 (de) 2011-04-13
KR100781728B1 (ko) 2007-12-03
TW512465B (en) 2002-12-01
US20030015131A1 (en) 2003-01-23
KR20010105392A (ko) 2001-11-28
EP1195455A1 (de) 2002-04-10
US6599360B2 (en) 2003-07-29
WO2001055485A1 (fr) 2001-08-02

Similar Documents

Publication Publication Date Title
DE60144416D1 (de) Verfahren zur bestimmung unter welchen konditionen der siliziumeinkristall hergestellt wurde und verfahren zur herstellung des siliziumwafers
DE60124246D1 (de) Polykristallines silicium und verfahren zur herstellung desselben
DE60136884D1 (de) Verfahren zur Herstellung von Siliziumkarbid, sowie Siliziumkarbid, Verbundwerkstoff und Halbleiterbauelement
DE69902494T2 (de) Verfahren zur Herstellung eines einkristallinen Siliciumwafers und durch das Verfahren hergestellter einkristalliner Siliciumwafer
DE69909205D1 (de) Verfahren zur Herstellung vertikaler Transistoren
DE60135992D1 (de) Verfahren zur herstellung von silizium-einkristall-wafer
DE59905881D1 (de) Verfahren zur herstellung von aminen
DE60109579D1 (de) Stabilisierte kieselsäure und verfahren zur herstellung und verwendung derselben
DE60130878D1 (de) Antireflexionsschicht und verfahren zur herstellung
DE60140736D1 (de) Wabenförmige struktur und verfahren zur herstellung derselben
DE60106933D1 (de) Verfahren zur herstellung von citalopram
DE60319099D1 (de) Kaugummiformulierung und verfahren zur herstellung derselben
DE60141788D1 (de) Verfahren zur Herstellung von epsilon-Caprolactam
DE60118085D1 (de) Silicium/Siliciumkarbid-Komposit und Verfahren zur Herstellung desselben
DE60128529D1 (de) Verfahren zur Herstellung von mikromechanischen und mikrooptomechanischen Strukturen mit Freilegen von einkristallinem Silizium
DE60117106D1 (de) Verfahren zur Herstellung von Halopropyldimethylchlorosilanen
DE60041429D1 (de) Verfahren zur herstellung von silicium einkristallen
DE60138443D1 (de) Verfahren zur herstellung von siliziumeinkristallen
DE60045735D1 (de) Verfahren zur herstellung von silizium epitaktischem wafer
DE60026607T8 (de) Verfahren zur Herstellung von Perfluoralkadienen
DE50103049D1 (de) Verfahren zur Herstellung von Aminodiphenylaminen
DE59809042D1 (de) Verfahren zur Herstellung SiOH-funktioneller Carbosilan-Dendrimere
DE69935509D1 (de) Verfahren zur herstellung von durchscheinenden zahnersätzen
DE60133280D1 (de) Verfahren zur herstellung von citalopram
DE60142201D1 (de) Verfahren zur Herstellung von einkristallinem Siliziumkarbid