DE60135986D1 - Anodenspannungssensor eines vertikalen leistungsbauelementes und verwendung zum schutz von kurzschlüssen - Google Patents

Anodenspannungssensor eines vertikalen leistungsbauelementes und verwendung zum schutz von kurzschlüssen

Info

Publication number
DE60135986D1
DE60135986D1 DE60135986T DE60135986T DE60135986D1 DE 60135986 D1 DE60135986 D1 DE 60135986D1 DE 60135986 T DE60135986 T DE 60135986T DE 60135986 T DE60135986 T DE 60135986T DE 60135986 D1 DE60135986 D1 DE 60135986D1
Authority
DE
Germany
Prior art keywords
vertical power
voltage sensor
anoden
anode
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60135986T
Other languages
English (en)
Inventor
Patrick Austin
Jean-Pierre Laur
Olivier Causse
Marie Breil
Jean-Louis Sanchez
Jean Jalade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Application granted granted Critical
Publication of DE60135986D1 publication Critical patent/DE60135986D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)
  • Light Receiving Elements (AREA)
DE60135986T 2000-05-11 2001-05-09 Anodenspannungssensor eines vertikalen leistungsbauelementes und verwendung zum schutz von kurzschlüssen Expired - Lifetime DE60135986D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0006026A FR2808922B1 (fr) 2000-05-11 2000-05-11 Capteur de tension d'anode d'un composant de puissance vertical et utilisation en protection de courts-circuits
PCT/FR2001/001402 WO2001086728A1 (fr) 2000-05-11 2001-05-09 Capteur de tension d'anode d'un composant de puissance vertical et utilisation en protection de courts-circuits

Publications (1)

Publication Number Publication Date
DE60135986D1 true DE60135986D1 (de) 2008-11-13

Family

ID=8850122

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60135986T Expired - Lifetime DE60135986D1 (de) 2000-05-11 2001-05-09 Anodenspannungssensor eines vertikalen leistungsbauelementes und verwendung zum schutz von kurzschlüssen

Country Status (9)

Country Link
US (1) US6831328B2 (de)
EP (1) EP1290734B1 (de)
JP (1) JP4996804B2 (de)
AT (1) ATE409961T1 (de)
AU (1) AU2001258521A1 (de)
CA (1) CA2409583C (de)
DE (1) DE60135986D1 (de)
FR (1) FR2808922B1 (de)
WO (1) WO2001086728A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7497455B2 (en) 2005-01-28 2009-03-03 Michael Kamalian Carbon fiber motorcycle frame

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3068968D1 (en) * 1979-11-16 1984-09-20 Gen Electric Asymmetrical field controlled thyristor
DE3231702A1 (de) * 1982-08-26 1984-03-01 Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen Schaltungsanordnung zur verzoegerung eines farbsignals
US4896196A (en) * 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
JP2617497B2 (ja) * 1987-12-18 1997-06-04 松下電工株式会社 半導体装置
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
JPH0671078B2 (ja) * 1988-04-23 1994-09-07 松下電工株式会社 半導体装置
JPH08139326A (ja) * 1994-09-14 1996-05-31 Toshiba Corp 絶縁ゲート型半導体装置
DE19648041B4 (de) * 1996-11-20 2010-07-15 Robert Bosch Gmbh Integriertes vertikales Halbleiterbauelement
JP3655049B2 (ja) * 1997-05-23 2005-06-02 株式会社ルネサステクノロジ 静電誘導トランジスタの駆動方法
US6180959B1 (en) * 1997-04-17 2001-01-30 Hitachi, Ltd. Static induction semiconductor device, and driving method and drive circuit thereof
FR2766993B1 (fr) * 1997-07-31 1999-10-15 Sgs Thomson Microelectronics Circuit de retard reglable

Also Published As

Publication number Publication date
JP4996804B2 (ja) 2012-08-08
US6831328B2 (en) 2004-12-14
WO2001086728A1 (fr) 2001-11-15
FR2808922B1 (fr) 2003-09-12
ATE409961T1 (de) 2008-10-15
US20030174008A1 (en) 2003-09-18
FR2808922A1 (fr) 2001-11-16
AU2001258521A1 (en) 2001-11-20
JP2003533052A (ja) 2003-11-05
EP1290734B1 (de) 2008-10-01
EP1290734A1 (de) 2003-03-12
CA2409583A1 (en) 2001-11-15
CA2409583C (en) 2013-04-09

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