KR910010700A - 기생전류에 보호되는 수직형 모놀리식 반도체 전원장치 - Google Patents

기생전류에 보호되는 수직형 모놀리식 반도체 전원장치 Download PDF

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Publication number
KR910010700A
KR910010700A KR1019900017732A KR900017732A KR910010700A KR 910010700 A KR910010700 A KR 910010700A KR 1019900017732 A KR1019900017732 A KR 1019900017732A KR 900017732 A KR900017732 A KR 900017732A KR 910010700 A KR910010700 A KR 910010700A
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KR
South Korea
Prior art keywords
semiconductor power
metallization
monolithic semiconductor
material layer
insulating material
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KR1019900017732A
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English (en)
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KR100190352B1 (ko
Inventor
페를라 기우셉페
파라라 세르기오
Original Assignee
산토 푸졸로, 기우셉페 페롤라
에스지에스-톰손 마이크로일렉트로닉스 에스.알.엘.
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Publication of KR910010700A publication Critical patent/KR910010700A/ko
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Publication of KR100190352B1 publication Critical patent/KR100190352B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

내용 없음

Description

기생전류에 보호되는 수직형 모놀리식 반도체 전원장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 기생전류에 보호되는, 본 발명에 따른 모놀리식 전원장치의 제1의 실시예의 평면도.
제3도는 제2도의 라인 Ⅲ-Ⅲ에 따른 단면도.
제4도는 제2도의 라인 Ⅳ-Ⅳ에 따른 단면도.

Claims (11)

  1. 전원장치의 회로 성분을 한정하는 N+타입 영역(11,12;13;14) 과 P타입 영역(6,7,9,10)을 포함하는 N타입 영역(4,15)과 P타입 영역(8)을 포함하며 말단이 표면위로 돌출해있는 P타입 절연 포켓 (3)이 얻어지는 N+타입 기체(1)를 포함하는 수직형 모놀리식 반도체 전원장치에 있어서, 상기 절연포켓(3)의 돌출말단은 접지에 연결된 제1의 메타릴제이션(21,30)에 의해 완전히 덮여지는 것을 특징으로 하는 수직형 모놀리식 반도체 전원장치.
  2. 제1항에 있어서, 상기 제1의 메타릴제이션(21)은 금속 실리사이드로 성취되는 것을 특징으로 하는 장치.
  3. 제2항에 있어서, 상기 제1의 메타릴제이션(21)은 플라티늄 실리사이드로 성취되는 것을 특징으로 하는 장치.
  4. 제1항에 있어서, 상기 제1의 메탈리제이션(30)은 알루미늄으로 성취되는 것을 특징으로 하는 장치.
  5. 제1항에 있어서, 상기 제1의 메탈리제이션(21,30)은 절연재료층(18,40)으로 덮어지는 것을 특징으로 하는 장치.
  6. 제5항에 있어서, 상기 절연재료층(18)은 실리콘 산화막으로 성취되는 것을 특징으로 하는장치.
  7. 제5항에 있어서, 상기 절연재료층(18)에는 서로 다른 회로요소들을 연결하는 금속트랙(20)이 있는 것을 특징으로 하는장치.
  8. 제7항에 있어서, 상기 금속연결트랙(20)은 알루미늄으로 성취되는 것을 특징으로 하는 장치.
  9. 제5항에 있어서, 상기 절연재료층(40)에는 서로 다른 회로 요소들을 연결하는 제2의 메탈리제이션(31)이 있는 것을 특징으로 하는 장치.
  10. 제9항에 있어서, 상기 제2의 메탈리제이션(31)은 알루미늄으로 성취되는 것을 특징으로하는 장치.
  11. 제1항에 있어서, 상기 절연포켓(3)은 상기 기체 (1)위에 중첩되는 에피텍셜층(2)에서 얻어지는 것을 특징으로 하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900017732A 1989-11-17 1990-11-02 기생전류에 보호되는 수직형 모놀리식 반도체 전력소자 KR100190352B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT22428A/89 1989-11-17
IT02242889A IT1236797B (it) 1989-11-17 1989-11-17 Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.

Publications (2)

Publication Number Publication Date
KR910010700A true KR910010700A (ko) 1991-06-29
KR100190352B1 KR100190352B1 (ko) 1999-06-01

Family

ID=11196182

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900017732A KR100190352B1 (ko) 1989-11-17 1990-11-02 기생전류에 보호되는 수직형 모놀리식 반도체 전력소자

Country Status (5)

Country Link
US (1) US5221855A (ko)
EP (1) EP0429131A3 (ko)
JP (1) JPH03173169A (ko)
KR (1) KR100190352B1 (ko)
IT (1) IT1236797B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0544048B1 (en) * 1991-11-25 1997-06-18 STMicroelectronics S.r.l. Integrated bridge device optimising conduction power losses
EP1172848A1 (en) * 2000-07-14 2002-01-16 STMicroelectronics S.r.l. Integrated semiconductor structure
US7156115B2 (en) * 2003-01-28 2007-01-02 Lancer Partnership, Ltd Method and apparatus for flow control

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3517280A (en) * 1967-10-17 1970-06-23 Ibm Four layer diode device insensitive to rate effect and method of manufacture
US4174562A (en) * 1973-11-02 1979-11-20 Harris Corporation Process for forming metallic ground grid for integrated circuits
US4106048A (en) * 1977-04-27 1978-08-08 Rca Corp. Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres
IT1210916B (it) * 1982-08-05 1989-09-29 Ates Componenti Elettron Transistore integrato protetto contro le sovratensioni.
DE3276513D1 (en) * 1982-11-26 1987-07-09 Ibm Self-biased resistor structure and application to interface circuits realization
JPS59108326A (ja) * 1982-12-14 1984-06-22 Sanyo Electric Co Ltd 集積回路
IT1214806B (it) * 1984-09-21 1990-01-18 Ates Componenti Elettron Dispositivo integrato monolitico di potenza e semiconduttore
FR2575333B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif de protection d'un circuit integre contre les decharges electrostatiques
US4825278A (en) * 1985-10-17 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Radiation hardened semiconductor devices
US4883772A (en) * 1986-09-11 1989-11-28 National Semiconductor Corporation Process for making a self-aligned silicide shunt
JPS63114261A (ja) * 1986-09-11 1988-05-19 フェアチャイルド　セミコンダクタ　コーポレーション トランジスタ用の自己整合型ベース分路
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
US4999684A (en) * 1988-05-06 1991-03-12 General Electric Company Symmetrical blocking high voltage breakdown semiconducotr device
US4864379A (en) * 1988-05-20 1989-09-05 General Electric Company Bipolar transistor with field shields

Also Published As

Publication number Publication date
IT8922428A1 (it) 1991-05-17
EP0429131A3 (en) 1992-01-08
US5221855A (en) 1993-06-22
EP0429131A2 (en) 1991-05-29
IT1236797B (it) 1993-04-02
IT8922428A0 (it) 1989-11-17
JPH03173169A (ja) 1991-07-26
KR100190352B1 (ko) 1999-06-01

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