IT8922428A0 - Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite - Google Patents

Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite

Info

Publication number
IT8922428A0
IT8922428A0 IT22428A IT2242889A IT8922428A0 IT 8922428 A0 IT8922428 A0 IT 8922428A0 IT 22428 A IT22428 A IT 22428A IT 2242889 A IT2242889 A IT 2242889A IT 8922428 A0 IT8922428 A0 IT 8922428A0
Authority
IT
Italy
Prior art keywords
eddish
currents
power device
protection against
vertical type
Prior art date
Application number
IT22428A
Other languages
English (en)
Other versions
IT8922428A1 (it
IT1236797B (it
Inventor
Giuseppe Ferla
Sergio Palara
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT02242889A priority Critical patent/IT1236797B/it
Publication of IT8922428A0 publication Critical patent/IT8922428A0/it
Priority to US07/605,447 priority patent/US5221855A/en
Priority to KR1019900017732A priority patent/KR100190352B1/ko
Priority to EP19900203022 priority patent/EP0429131A3/en
Priority to JP2308941A priority patent/JPH03173169A/ja
Publication of IT8922428A1 publication Critical patent/IT8922428A1/it
Application granted granted Critical
Publication of IT1236797B publication Critical patent/IT1236797B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Emergency Protection Circuit Devices (AREA)
IT02242889A 1989-11-17 1989-11-17 Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite. IT1236797B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT02242889A IT1236797B (it) 1989-11-17 1989-11-17 Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.
US07/605,447 US5221855A (en) 1989-11-17 1990-10-30 Monolithic vertical-type semiconductor power device with a protection against parasitic currents
KR1019900017732A KR100190352B1 (ko) 1989-11-17 1990-11-02 기생전류에 보호되는 수직형 모놀리식 반도체 전력소자
EP19900203022 EP0429131A3 (en) 1989-11-17 1990-11-14 Monolithic vertical-type semiconductor power device with a protection against parasitic currents
JP2308941A JPH03173169A (ja) 1989-11-17 1990-11-16 寄生電流に対する保護を備えたモノリシック垂直型半導体電力デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT02242889A IT1236797B (it) 1989-11-17 1989-11-17 Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.

Publications (3)

Publication Number Publication Date
IT8922428A0 true IT8922428A0 (it) 1989-11-17
IT8922428A1 IT8922428A1 (it) 1991-05-17
IT1236797B IT1236797B (it) 1993-04-02

Family

ID=11196182

Family Applications (1)

Application Number Title Priority Date Filing Date
IT02242889A IT1236797B (it) 1989-11-17 1989-11-17 Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.

Country Status (5)

Country Link
US (1) US5221855A (it)
EP (1) EP0429131A3 (it)
JP (1) JPH03173169A (it)
KR (1) KR100190352B1 (it)
IT (1) IT1236797B (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69126618T2 (de) * 1991-11-25 1998-01-08 Cons Ric Microelettronica Integrierte Brückenanordnung mit optimierten Übertragungsleistungsverlusten
EP1172848A1 (en) * 2000-07-14 2002-01-16 STMicroelectronics S.r.l. Integrated semiconductor structure
US7156115B2 (en) * 2003-01-28 2007-01-02 Lancer Partnership, Ltd Method and apparatus for flow control

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3517280A (en) * 1967-10-17 1970-06-23 Ibm Four layer diode device insensitive to rate effect and method of manufacture
US4174562A (en) * 1973-11-02 1979-11-20 Harris Corporation Process for forming metallic ground grid for integrated circuits
US4106048A (en) * 1977-04-27 1978-08-08 Rca Corp. Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres
IT1210916B (it) * 1982-08-05 1989-09-29 Ates Componenti Elettron Transistore integrato protetto contro le sovratensioni.
EP0109996B1 (fr) * 1982-11-26 1987-06-03 International Business Machines Corporation Structure de résistance autopolarisée et application à la réalisation de circuits d'interface
JPS59108326A (ja) * 1982-12-14 1984-06-22 Sanyo Electric Co Ltd 集積回路
IT1214806B (it) * 1984-09-21 1990-01-18 Ates Componenti Elettron Dispositivo integrato monolitico di potenza e semiconduttore
FR2575333B1 (fr) * 1984-12-21 1987-01-23 Radiotechnique Compelec Dispositif de protection d'un circuit integre contre les decharges electrostatiques
US4825278A (en) * 1985-10-17 1989-04-25 American Telephone And Telegraph Company At&T Bell Laboratories Radiation hardened semiconductor devices
JPS63114261A (ja) * 1986-09-11 1988-05-19 フェアチャイルド　セミコンダクタ　コーポレーション トランジスタ用の自己整合型ベース分路
US4883772A (en) * 1986-09-11 1989-11-28 National Semiconductor Corporation Process for making a self-aligned silicide shunt
GB2204445B (en) * 1987-03-06 1991-04-24 Texas Instruments Ltd Semiconductor switch
US4999684A (en) * 1988-05-06 1991-03-12 General Electric Company Symmetrical blocking high voltage breakdown semiconducotr device
US4864379A (en) * 1988-05-20 1989-09-05 General Electric Company Bipolar transistor with field shields

Also Published As

Publication number Publication date
KR910010700A (ko) 1991-06-29
JPH03173169A (ja) 1991-07-26
IT8922428A1 (it) 1991-05-17
EP0429131A3 (en) 1992-01-08
US5221855A (en) 1993-06-22
IT1236797B (it) 1993-04-02
EP0429131A2 (en) 1991-05-29
KR100190352B1 (ko) 1999-06-01

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Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971129