IT8922428A0 - Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite - Google Patents
Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassiteInfo
- Publication number
- IT8922428A0 IT8922428A0 IT22428A IT2242889A IT8922428A0 IT 8922428 A0 IT8922428 A0 IT 8922428A0 IT 22428 A IT22428 A IT 22428A IT 2242889 A IT2242889 A IT 2242889A IT 8922428 A0 IT8922428 A0 IT 8922428A0
- Authority
- IT
- Italy
- Prior art keywords
- eddish
- currents
- power device
- protection against
- vertical type
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Bipolar Transistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT02242889A IT1236797B (it) | 1989-11-17 | 1989-11-17 | Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite. |
US07/605,447 US5221855A (en) | 1989-11-17 | 1990-10-30 | Monolithic vertical-type semiconductor power device with a protection against parasitic currents |
KR1019900017732A KR100190352B1 (ko) | 1989-11-17 | 1990-11-02 | 기생전류에 보호되는 수직형 모놀리식 반도체 전력소자 |
EP19900203022 EP0429131A3 (en) | 1989-11-17 | 1990-11-14 | Monolithic vertical-type semiconductor power device with a protection against parasitic currents |
JP2308941A JPH03173169A (ja) | 1989-11-17 | 1990-11-16 | 寄生電流に対する保護を備えたモノリシック垂直型半導体電力デバイス |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT02242889A IT1236797B (it) | 1989-11-17 | 1989-11-17 | Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite. |
Publications (3)
Publication Number | Publication Date |
---|---|
IT8922428A0 true IT8922428A0 (it) | 1989-11-17 |
IT8922428A1 IT8922428A1 (it) | 1991-05-17 |
IT1236797B IT1236797B (it) | 1993-04-02 |
Family
ID=11196182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT02242889A IT1236797B (it) | 1989-11-17 | 1989-11-17 | Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5221855A (it) |
EP (1) | EP0429131A3 (it) |
JP (1) | JPH03173169A (it) |
KR (1) | KR100190352B1 (it) |
IT (1) | IT1236797B (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69126618T2 (de) * | 1991-11-25 | 1998-01-08 | Cons Ric Microelettronica | Integrierte Brückenanordnung mit optimierten Übertragungsleistungsverlusten |
EP1172848A1 (en) * | 2000-07-14 | 2002-01-16 | STMicroelectronics S.r.l. | Integrated semiconductor structure |
US7156115B2 (en) * | 2003-01-28 | 2007-01-02 | Lancer Partnership, Ltd | Method and apparatus for flow control |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3517280A (en) * | 1967-10-17 | 1970-06-23 | Ibm | Four layer diode device insensitive to rate effect and method of manufacture |
US4174562A (en) * | 1973-11-02 | 1979-11-20 | Harris Corporation | Process for forming metallic ground grid for integrated circuits |
US4106048A (en) * | 1977-04-27 | 1978-08-08 | Rca Corp. | Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor |
FR2492165A1 (fr) * | 1980-05-14 | 1982-04-16 | Thomson Csf | Dispositif de protection contre les courants de fuite dans des circuits integres |
IT1210916B (it) * | 1982-08-05 | 1989-09-29 | Ates Componenti Elettron | Transistore integrato protetto contro le sovratensioni. |
EP0109996B1 (fr) * | 1982-11-26 | 1987-06-03 | International Business Machines Corporation | Structure de résistance autopolarisée et application à la réalisation de circuits d'interface |
JPS59108326A (ja) * | 1982-12-14 | 1984-06-22 | Sanyo Electric Co Ltd | 集積回路 |
IT1214806B (it) * | 1984-09-21 | 1990-01-18 | Ates Componenti Elettron | Dispositivo integrato monolitico di potenza e semiconduttore |
FR2575333B1 (fr) * | 1984-12-21 | 1987-01-23 | Radiotechnique Compelec | Dispositif de protection d'un circuit integre contre les decharges electrostatiques |
US4825278A (en) * | 1985-10-17 | 1989-04-25 | American Telephone And Telegraph Company At&T Bell Laboratories | Radiation hardened semiconductor devices |
US4883772A (en) * | 1986-09-11 | 1989-11-28 | National Semiconductor Corporation | Process for making a self-aligned silicide shunt |
JPS63114261A (ja) * | 1986-09-11 | 1988-05-19 | フェアチャイルド セミコンダクタ コーポレーション | トランジスタ用の自己整合型ベース分路 |
GB2204445B (en) * | 1987-03-06 | 1991-04-24 | Texas Instruments Ltd | Semiconductor switch |
US4999684A (en) * | 1988-05-06 | 1991-03-12 | General Electric Company | Symmetrical blocking high voltage breakdown semiconducotr device |
US4864379A (en) * | 1988-05-20 | 1989-09-05 | General Electric Company | Bipolar transistor with field shields |
-
1989
- 1989-11-17 IT IT02242889A patent/IT1236797B/it active IP Right Grant
-
1990
- 1990-10-30 US US07/605,447 patent/US5221855A/en not_active Expired - Lifetime
- 1990-11-02 KR KR1019900017732A patent/KR100190352B1/ko not_active IP Right Cessation
- 1990-11-14 EP EP19900203022 patent/EP0429131A3/en not_active Withdrawn
- 1990-11-16 JP JP2308941A patent/JPH03173169A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
IT8922428A1 (it) | 1991-05-17 |
US5221855A (en) | 1993-06-22 |
JPH03173169A (ja) | 1991-07-26 |
KR100190352B1 (ko) | 1999-06-01 |
EP0429131A3 (en) | 1992-01-08 |
KR910010700A (ko) | 1991-06-29 |
IT1236797B (it) | 1993-04-02 |
EP0429131A2 (en) | 1991-05-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
0001 | Granted | ||
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19971129 |