DE69126618T2 - Integrierte Brückenanordnung mit optimierten Übertragungsleistungsverlusten - Google Patents

Integrierte Brückenanordnung mit optimierten Übertragungsleistungsverlusten

Info

Publication number
DE69126618T2
DE69126618T2 DE69126618T DE69126618T DE69126618T2 DE 69126618 T2 DE69126618 T2 DE 69126618T2 DE 69126618 T DE69126618 T DE 69126618T DE 69126618 T DE69126618 T DE 69126618T DE 69126618 T2 DE69126618 T2 DE 69126618T2
Authority
DE
Germany
Prior art keywords
transmission power
power losses
bridge arrangement
optimized transmission
integrated bridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69126618T
Other languages
English (en)
Other versions
DE69126618D1 (de
Inventor
Mario Paparo
Natale Aiello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno, SGS Thomson Microelectronics SRL filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69126618D1 publication Critical patent/DE69126618D1/de
Publication of DE69126618T2 publication Critical patent/DE69126618T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
    • H02M7/2195—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration the switches being synchronously commutated at the same frequency of the AC input voltage
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Direct Current Feeding And Distribution (AREA)
DE69126618T 1991-11-25 1991-11-25 Integrierte Brückenanordnung mit optimierten Übertragungsleistungsverlusten Expired - Fee Related DE69126618T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP91830513A EP0544048B1 (de) 1991-11-25 1991-11-25 Integrierte Brückenanordnung mit optimierten Übertragungsleistungsverlusten

Publications (2)

Publication Number Publication Date
DE69126618D1 DE69126618D1 (de) 1997-07-24
DE69126618T2 true DE69126618T2 (de) 1998-01-08

Family

ID=8208986

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126618T Expired - Fee Related DE69126618T2 (de) 1991-11-25 1991-11-25 Integrierte Brückenanordnung mit optimierten Übertragungsleistungsverlusten

Country Status (4)

Country Link
US (1) US5444291A (de)
EP (1) EP0544048B1 (de)
JP (1) JPH05243504A (de)
DE (1) DE69126618T2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822399B2 (en) 2001-01-24 2004-11-23 Infineon Technologies Ag Half-bridge circuit
DE102021127308A1 (de) 2021-10-21 2023-04-27 Infineon Technologies Ag Halbleitergehäuse und verfahren zur herstellung eines halbleitergehäuses

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2769771B1 (fr) * 1997-10-15 1999-12-31 Valeo Equip Electr Moteur Dispositif pour le redressement synchrone d'un alternateur
JP2001507524A (ja) * 1997-10-28 2001-06-05 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ハーフブリッジ回路を具える半導体デバイス
JP4610786B2 (ja) * 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置
GB0308345D0 (en) * 2003-04-11 2003-05-14 Power Electronics Design Ct Power intregrated circuits
JP4749665B2 (ja) * 2003-12-12 2011-08-17 ローム株式会社 半導体装置
JP5270882B2 (ja) * 2007-08-30 2013-08-21 セイコーインスツル株式会社 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3590345A (en) * 1969-06-25 1971-06-29 Westinghouse Electric Corp Double wall pn junction isolation for monolithic integrated circuit components
JPS5215278A (en) * 1975-07-28 1977-02-04 Hitachi Ltd Semiconductor device
JPS59149046A (ja) * 1983-02-15 1984-08-25 Matsushita Electric Ind Co Ltd モノリシツクプレナ−プロセス集積回路
DE3400973A1 (de) * 1984-01-13 1985-07-18 Philips Patentverwaltung Gmbh, 2000 Hamburg Monolithisch integrierte gleichrichterbrueckenschaltung
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
IT1228900B (it) * 1989-02-27 1991-07-09 Sgs Thomson Microelectronics Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza.
IT1231541B (it) * 1989-07-25 1991-12-17 Sgs Thomson Microelectronics Dispositivo di protezione contro gli effetti parassiti provocati da impulsi negativi di tensione di alimentazione in circuiti integrati monolitici includenti un dispositivo di potenza per il pilotaggio di un carico induttivo ed un dispositivo di controllo per detto dispositivo di potenza.
IT1236667B (it) * 1989-11-07 1993-03-25 Sgs Thomson Microelectronics Dispositivo di protezione contro la rottura di una regione diffusa di tipo n+ inserita in una struttura integrata di potenza a semiconduttore di tipo verticale
IT1236797B (it) * 1989-11-17 1993-04-02 St Microelectronics Srl Dispositivo monolitico di potenza a semiconduttore di tipo verticale con una protezione contro le correnti parassite.

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822399B2 (en) 2001-01-24 2004-11-23 Infineon Technologies Ag Half-bridge circuit
DE102021127308A1 (de) 2021-10-21 2023-04-27 Infineon Technologies Ag Halbleitergehäuse und verfahren zur herstellung eines halbleitergehäuses

Also Published As

Publication number Publication date
US5444291A (en) 1995-08-22
EP0544048B1 (de) 1997-06-18
JPH05243504A (ja) 1993-09-21
EP0544048A1 (de) 1993-06-02
DE69126618D1 (de) 1997-07-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee