AU2001258521A1 - Anode voltage sensor of a vertical power component and use for protecting against short circuits - Google Patents

Anode voltage sensor of a vertical power component and use for protecting against short circuits

Info

Publication number
AU2001258521A1
AU2001258521A1 AU2001258521A AU5852101A AU2001258521A1 AU 2001258521 A1 AU2001258521 A1 AU 2001258521A1 AU 2001258521 A AU2001258521 A AU 2001258521A AU 5852101 A AU5852101 A AU 5852101A AU 2001258521 A1 AU2001258521 A1 AU 2001258521A1
Authority
AU
Australia
Prior art keywords
anode voltage
power component
vertical power
voltage sensor
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001258521A
Inventor
Patrick Austin
Marie Breil
Olivier Causse
Jean Jalade
Jean-Pierre Laur
Jean-Louis Sanchez
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Publication of AU2001258521A1 publication Critical patent/AU2001258521A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Light Receiving Elements (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Protection Of Static Devices (AREA)

Abstract

The invention concerns an anode voltage sensor of a vertical power component selected from the group consisting of components called thyristor, MOS, IGBT, PMCT, EST, BRT transistor, MOS thyristor, turn-off MOS thyristor, formed by a lightly doped N-type substrate (1) whereof the rear surface (2) having a metallizing coat corresponds to the component anode. Said sensor comprises, on the front surface side, a substrate zone (12) surrounded at least partly by a P-type region with low potential in front of an anode potential, said zone (12) being coated with a metallizing coat (M) in ohmic contact with it, whereon is provided an image of the anode voltage.
AU2001258521A 2000-05-11 2001-05-09 Anode voltage sensor of a vertical power component and use for protecting against short circuits Abandoned AU2001258521A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0006026A FR2808922B1 (en) 2000-05-11 2000-05-11 ANODE VOLTAGE SENSOR OF A VERTICAL POWER COMPONENT AND USE IN SHORT-CIRCUIT PROTECTION
FR0006026 2000-05-11
PCT/FR2001/001402 WO2001086728A1 (en) 2000-05-11 2001-05-09 Anode voltage sensor of a vertical power component and use for protecting against short circuits

Publications (1)

Publication Number Publication Date
AU2001258521A1 true AU2001258521A1 (en) 2001-11-20

Family

ID=8850122

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001258521A Abandoned AU2001258521A1 (en) 2000-05-11 2001-05-09 Anode voltage sensor of a vertical power component and use for protecting against short circuits

Country Status (9)

Country Link
US (1) US6831328B2 (en)
EP (1) EP1290734B1 (en)
JP (1) JP4996804B2 (en)
AT (1) ATE409961T1 (en)
AU (1) AU2001258521A1 (en)
CA (1) CA2409583C (en)
DE (1) DE60135986D1 (en)
FR (1) FR2808922B1 (en)
WO (1) WO2001086728A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7497455B2 (en) 2005-01-28 2009-03-03 Michael Kamalian Carbon fiber motorcycle frame

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3068968D1 (en) * 1979-11-16 1984-09-20 Gen Electric Asymmetrical field controlled thyristor
DE3231702A1 (en) * 1982-08-26 1984-03-01 Deutsche Thomson-Brandt Gmbh, 7730 Villingen-Schwenningen Circuit arrangement for delaying a colour signal
US4896196A (en) * 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
JP2617497B2 (en) * 1987-12-18 1997-06-04 松下電工株式会社 Semiconductor device
GB2213988B (en) * 1987-12-18 1992-02-05 Matsushita Electric Works Ltd Semiconductor device
JPH0671078B2 (en) * 1988-04-23 1994-09-07 松下電工株式会社 Semiconductor device
JPH08139326A (en) * 1994-09-14 1996-05-31 Toshiba Corp Insulated gate semiconductor device
DE19648041B4 (en) * 1996-11-20 2010-07-15 Robert Bosch Gmbh Integrated vertical semiconductor device
JP3655049B2 (en) * 1997-05-23 2005-06-02 株式会社ルネサステクノロジ Driving method of electrostatic induction transistor
US6180959B1 (en) * 1997-04-17 2001-01-30 Hitachi, Ltd. Static induction semiconductor device, and driving method and drive circuit thereof
FR2766993B1 (en) * 1997-07-31 1999-10-15 Sgs Thomson Microelectronics ADJUSTABLE DELAY CIRCUIT

Also Published As

Publication number Publication date
CA2409583A1 (en) 2001-11-15
US6831328B2 (en) 2004-12-14
JP4996804B2 (en) 2012-08-08
FR2808922A1 (en) 2001-11-16
DE60135986D1 (en) 2008-11-13
CA2409583C (en) 2013-04-09
US20030174008A1 (en) 2003-09-18
EP1290734A1 (en) 2003-03-12
ATE409961T1 (en) 2008-10-15
WO2001086728A1 (en) 2001-11-15
FR2808922B1 (en) 2003-09-12
JP2003533052A (en) 2003-11-05
EP1290734B1 (en) 2008-10-01

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