TWI263361B - Group III nitride semiconductor light-emitting device - Google Patents
Group III nitride semiconductor light-emitting deviceInfo
- Publication number
- TWI263361B TWI263361B TW94113603A TW94113603A TWI263361B TW I263361 B TWI263361 B TW I263361B TW 94113603 A TW94113603 A TW 94113603A TW 94113603 A TW94113603 A TW 94113603A TW I263361 B TWI263361 B TW I263361B
- Authority
- TW
- Taiwan
- Prior art keywords
- nitride semiconductor
- iii nitride
- group iii
- emitting device
- semiconductor light
- Prior art date
Links
Landscapes
- Led Devices (AREA)
Abstract
A group III nitride semiconductor light-emitting device provided on a crystal substrate with an n-type and p-type group III nitride semiconductor of AlXGaYInZN1-aMa, wherein 0 <= X <= 1, 0 <= Y <= 1, 0 <= Z <= 1, X+Y+Z =1, M denotes a group V element other than N and 0 <= a < 1, includes an n-type electrode contact layer of group III nitride semiconductor including a region doped with Ge and a light-emitting layer including a region undoped or doped with at least one element selected from the group consisting of Si, C, Sn and Pb.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004132784 | 2004-04-28 | ||
JP2005017991A JP2005340762A (en) | 2004-04-28 | 2005-01-26 | Group iii nitride semiconductor light-emitting element |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200541115A TW200541115A (en) | 2005-12-16 |
TWI263361B true TWI263361B (en) | 2006-10-01 |
Family
ID=35493927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW94113603A TWI263361B (en) | 2004-04-28 | 2005-04-28 | Group III nitride semiconductor light-emitting device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2005340762A (en) |
TW (1) | TWI263361B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5270088B2 (en) | 2005-12-15 | 2013-08-21 | エルジー エレクトロニクス インコーポレイティド | Vertical light emitting device and manufacturing method thereof |
KR101239856B1 (en) * | 2006-02-02 | 2013-03-06 | 서울옵토디바이스주식회사 | Light-emitting diode and Method of manufacturing the same |
JP2011159771A (en) * | 2010-01-29 | 2011-08-18 | Nec Corp | Nitride semiconductor light-emitting element, and manufacturing method of the nitride semiconductor light-emitting element, and electronic device |
US10529561B2 (en) * | 2015-12-28 | 2020-01-07 | Texas Instruments Incorporated | Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices |
CN117810324B (en) * | 2024-02-29 | 2024-05-24 | 江西兆驰半导体有限公司 | Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2890390B2 (en) * | 1994-07-06 | 1999-05-10 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor light emitting device |
JP3576743B2 (en) * | 1996-04-22 | 2004-10-13 | 東芝電子エンジニアリング株式会社 | Light emitting element |
JP3275810B2 (en) * | 1997-11-18 | 2002-04-22 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP3448196B2 (en) * | 1997-07-25 | 2003-09-16 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
JP3620292B2 (en) * | 1997-09-01 | 2005-02-16 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP4122552B2 (en) * | 1997-11-12 | 2008-07-23 | 日亜化学工業株式会社 | Light emitting device |
JP3719047B2 (en) * | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP3803696B2 (en) * | 2000-11-21 | 2006-08-02 | 日亜化学工業株式会社 | Nitride semiconductor device |
JP2002170988A (en) * | 2000-12-01 | 2002-06-14 | Sharp Corp | Nitride semiconductor light emitting element and its light emitting device |
JP2003046127A (en) * | 2001-05-23 | 2003-02-14 | Sanyo Electric Co Ltd | Nitride semiconductor light-emitting element |
JP2003229645A (en) * | 2002-01-31 | 2003-08-15 | Nec Corp | Quantum well structure, semiconductor element employing it and its fabricating method |
-
2005
- 2005-01-26 JP JP2005017991A patent/JP2005340762A/en active Pending
- 2005-04-28 TW TW94113603A patent/TWI263361B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP2005340762A (en) | 2005-12-08 |
TW200541115A (en) | 2005-12-16 |
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Legal Events
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MM4A | Annulment or lapse of patent due to non-payment of fees |