NO20065598L - Tunnel crossings for long-haul VCSELs. - Google Patents

Tunnel crossings for long-haul VCSELs.

Info

Publication number
NO20065598L
NO20065598L NO20065598A NO20065598A NO20065598L NO 20065598 L NO20065598 L NO 20065598L NO 20065598 A NO20065598 A NO 20065598A NO 20065598 A NO20065598 A NO 20065598A NO 20065598 L NO20065598 L NO 20065598L
Authority
NO
Norway
Prior art keywords
tunnel
type
transition
vcsels
haul
Prior art date
Application number
NO20065598A
Other languages
Norwegian (no)
Inventor
Rajarm Bhat
Nobuhiko Nishiyama
Original Assignee
Corning Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Inc filed Critical Corning Inc
Publication of NO20065598L publication Critical patent/NO20065598L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers

Abstract

En tunnelovergangsanordning (102) med minimal hydrogenpassivering av akseptorer omfatter et p-type tunnelovergangslag (106) av et første halvleder- materiale som er dopet med karbon. Det første halvledermaterialet omfatter aluminium, gallium, arsen og antimon. Et n-type tunnelovergangslag (104) av et andre halvledermateriale omfatter indium, gallium, arsen og én av aluminium og fosfor. Overgangen mellom p-type og n-type tuimelovergangslagene danner en tunnelovergang (110).A tunnel transition device (102) with minimal hydrogen passivation of acceptors comprises a β-type tunnel transition layer (106) of a first semiconductor material doped with carbon. The first semiconductor material includes aluminum, gallium, arsenic and antimony. An n-type tunnel transition layer (104) of a second semiconductor material comprises indium, gallium, arsenic and one of aluminum and phosphorus. The transition between p-type and n-type tumble transition layers forms a tunnel transition (110).

NO20065598A 2004-05-17 2006-12-05 Tunnel crossings for long-haul VCSELs. NO20065598L (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/848,456 US6933539B1 (en) 2004-05-17 2004-05-17 Tunnel junctions for long-wavelength VCSELs
PCT/US2005/017288 WO2005117135A1 (en) 2004-05-17 2005-05-17 Tunnel junctions for long-wavelength vcsels

Publications (1)

Publication Number Publication Date
NO20065598L true NO20065598L (en) 2006-12-05

Family

ID=34839014

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20065598A NO20065598L (en) 2004-05-17 2006-12-05 Tunnel crossings for long-haul VCSELs.

Country Status (9)

Country Link
US (2) US6933539B1 (en)
EP (1) EP1766689A4 (en)
JP (1) JP2007538410A (en)
KR (1) KR20070012550A (en)
CN (1) CN1973378A (en)
AU (1) AU2005330578A1 (en)
CA (1) CA2567028A1 (en)
NO (1) NO20065598L (en)
WO (1) WO2005117135A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7085298B2 (en) * 2003-10-31 2006-08-01 Finisar Corporation Tunnel junction utilizing GaPSb, AlGaPSb
US7072376B2 (en) * 2004-09-16 2006-07-04 Corning Incorporated Method of manufacturing an InP based vertical cavity surface emitting laser and device produced therefrom
US7319386B2 (en) 2004-08-02 2008-01-15 Hill-Rom Services, Inc. Configurable system for alerting caregivers
JP2007304472A (en) * 2006-05-15 2007-11-22 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical modulator
US7817691B2 (en) * 2006-05-19 2010-10-19 Nec Corporation Light emitting device
JP2008235574A (en) * 2007-03-20 2008-10-02 Sumitomo Electric Ind Ltd Surface-emitting semiconductor laser
TWM324049U (en) * 2007-05-21 2007-12-21 Universal Scient Ind Co Ltd Packaging structure of wireless communication module
CN101803035B (en) * 2007-06-19 2016-08-24 昆南诺股份有限公司 Solar battery structure based on nano wire
JP2009059918A (en) * 2007-08-31 2009-03-19 Sumitomo Electric Ind Ltd Optical semiconductor device
JP5649157B2 (en) * 2009-08-01 2015-01-07 住友電気工業株式会社 Semiconductor device and manufacturing method thereof
CN102832538A (en) * 2012-09-10 2012-12-19 中国科学院半导体研究所 Active area broadband gain structure with layers of quantum dot tunnel junction connected in series
JP2013157645A (en) * 2013-05-22 2013-08-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor laser and distributed feedback laser integrated with electroabsorption modulator
JP2016092175A (en) * 2014-11-04 2016-05-23 三菱電機株式会社 Semiconductor optical element
US20160349456A1 (en) * 2015-04-21 2016-12-01 Infineon Technologies Austria Ag Plasmonic and photonic wavelength separation filters
US20170084771A1 (en) * 2015-09-21 2017-03-23 The Boeing Company Antimonide-based high bandgap tunnel junction for semiconductor devices
DE102017005950A1 (en) * 2017-06-21 2018-12-27 Azur Space Solar Power Gmbh solar cell stack
DE102019003068A1 (en) * 2019-04-30 2020-11-05 3-5 Power Electronics GmbH InGaAS stacked high-blocking semiconductor power diode
US11616343B2 (en) 2020-05-21 2023-03-28 Lumentum Operations Llc Vertical-cavity surface-emitting laser with a tunnel junction
US11855413B2 (en) 2020-06-22 2023-12-26 Lumentum Operations Llc Vertical-cavity surface-emitting laser array with isolated cathodes and a common anode
JPWO2022113194A1 (en) * 2020-11-25 2022-06-02
CN114744484B (en) * 2022-04-08 2024-03-26 青岛科技大学 high-power laser structure based on GaAs-based high-band-gap tunnel junction

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0715357A1 (en) 1994-11-30 1996-06-05 Rockwell International Corporation Carbon-doped GaAsSb semiconductor
US7295586B2 (en) 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6765238B2 (en) 2002-09-12 2004-07-20 Agilent Technologies, Inc. Material systems for semiconductor tunnel-junction structures

Also Published As

Publication number Publication date
US6933539B1 (en) 2005-08-23
JP2007538410A (en) 2007-12-27
AU2005330578A8 (en) 2008-08-14
CN1973378A (en) 2007-05-30
US6982439B2 (en) 2006-01-03
WO2005117135A1 (en) 2005-12-08
EP1766689A4 (en) 2008-01-09
US20050253164A1 (en) 2005-11-17
EP1766689A1 (en) 2007-03-28
KR20070012550A (en) 2007-01-25
CA2567028A1 (en) 2005-12-08
AU2005330578A1 (en) 2006-12-14

Similar Documents

Publication Publication Date Title
NO20065598L (en) Tunnel crossings for long-haul VCSELs.
EP2306529A3 (en) Nitride semiconductor light emitting device and fabrication method thereof
MY165986A (en) Photovoltaic devices including heterojunctions
TW200625679A (en) Group Ⅲ nitride based quantum well light emitting device structures with an indium containing capping structure
MY169596A (en) Photovoltaic devices including doped semiconductor films
Kim et al. Schottky‐Barrier‐Controllable Graphene Electrode to Boost Rectification in Organic Vertical P–N Junction Photodiodes
TW200711171A (en) Gallium nitride based semiconductor device and method of manufacturing same
Luryi et al. Future Trends in Microelectronics: Frontiers and Innovations
TW200729491A (en) Silicon carbide semiconductor device and method for producing the same
WO2007036456A3 (en) Sic-pn power diode
DE602006006088D1 (en) BRID CRYSTAL ORIENTATION
Lian et al. Ultralow-voltage operation of light-emitting diodes
Cheriton et al. Two-photon photocurrent in InGaN/GaN nanowire intermediate band solar cells
SE0700896L (en) Semiconductor component in silicon carbide
TW200605403A (en) Improved substrate buffer structure for group Ⅲ nitride devices
WO2008153068A1 (en) Nitride semiconductor device and method for manufacturing the same
US9064610B2 (en) Betavoltaic battery with diamond moderator and related system and method
Kuo et al. Designer germanium quantum dot phototransistor for near infrared optical detection and amplification
Chang et al. Graphene/SiO2/p‐GaN Diodes: An Advanced Economical Alternative for Electrically Tunable Light Emitters
Ra et al. Probing the importance of charge balance and noise current in WSe2/WS2/MoS2 van der Waals heterojunction phototransistors by selective electrostatic doping
Riuttanen et al. Diffusion injected multi-quantum well light-emitting diode structure
TW200623331A (en) Semiconductor device having a silicon layer in a gate electrode
WO2009022592A1 (en) Soft recovery diode
Royall et al. Comparative study of GaAs and GaInNAs/GaAs multi‐quantum well solar cells
TW200711147A (en) Semiconductor device

Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application