SE9604142L - Halvledaranordning och förfarande vid densamma - Google Patents

Halvledaranordning och förfarande vid densamma

Info

Publication number
SE9604142L
SE9604142L SE9604142A SE9604142A SE9604142L SE 9604142 L SE9604142 L SE 9604142L SE 9604142 A SE9604142 A SE 9604142A SE 9604142 A SE9604142 A SE 9604142A SE 9604142 L SE9604142 L SE 9604142L
Authority
SE
Sweden
Prior art keywords
semiconductor device
collector region
voltage
lateral
common collector
Prior art date
Application number
SE9604142A
Other languages
Unknown language ( )
English (en)
Other versions
SE9604142D0 (sv
SE512661C2 (sv
Inventor
Anders Soederbaerg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Priority to SE9604142A priority Critical patent/SE512661C2/sv
Publication of SE9604142D0 publication Critical patent/SE9604142D0/sv
Priority to US08/968,213 priority patent/US6015982A/en
Priority to KR10-1999-7004140A priority patent/KR100526076B1/ko
Priority to JP52248298A priority patent/JP2001504275A/ja
Priority to CA002271313A priority patent/CA2271313A1/en
Priority to CNB971812209A priority patent/CN1146047C/zh
Priority to AU50762/98A priority patent/AU5076298A/en
Priority to PCT/SE1997/001908 priority patent/WO1998021753A1/en
Priority to EP97913624A priority patent/EP0946983A1/en
Priority to TW086117777A priority patent/TW367595B/zh
Publication of SE9604142L publication Critical patent/SE9604142L/sv
Publication of SE512661C2 publication Critical patent/SE512661C2/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SE9604142A 1996-11-13 1996-11-13 Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma SE512661C2 (sv)

Priority Applications (10)

Application Number Priority Date Filing Date Title
SE9604142A SE512661C2 (sv) 1996-11-13 1996-11-13 Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma
US08/968,213 US6015982A (en) 1996-11-13 1997-11-12 Lateral bipolar field effect mode hybrid transistor and method for operating the same
EP97913624A EP0946983A1 (en) 1996-11-13 1997-11-13 Lateral bipolar field effect mode hybrid transistor and method for the same
CA002271313A CA2271313A1 (en) 1996-11-13 1997-11-13 Lateral bipolar field effect mode hybrid transistor and method for the same
JP52248298A JP2001504275A (ja) 1996-11-13 1997-11-13 横型バイポーラ電界効果モード・ハイブリッド・トランジスタとその方法
KR10-1999-7004140A KR100526076B1 (ko) 1996-11-13 1997-11-13 반도체 장치 및 그 제조 방법
CNB971812209A CN1146047C (zh) 1996-11-13 1997-11-13 横向双极型场效应复合晶体管及其制作方法
AU50762/98A AU5076298A (en) 1996-11-13 1997-11-13 Lateral bipolar field effect mode hybrid transistor and method for the same
PCT/SE1997/001908 WO1998021753A1 (en) 1996-11-13 1997-11-13 Lateral bipolar field effect mode hybrid transistor and method for the same
TW086117777A TW367595B (en) 1996-11-13 1997-11-26 Lateral bipolar field effect mode hybrid transistor and method for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9604142A SE512661C2 (sv) 1996-11-13 1996-11-13 Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma

Publications (3)

Publication Number Publication Date
SE9604142D0 SE9604142D0 (sv) 1996-11-13
SE9604142L true SE9604142L (sv) 1998-05-14
SE512661C2 SE512661C2 (sv) 2000-04-17

Family

ID=20404585

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9604142A SE512661C2 (sv) 1996-11-13 1996-11-13 Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma

Country Status (10)

Country Link
US (1) US6015982A (sv)
EP (1) EP0946983A1 (sv)
JP (1) JP2001504275A (sv)
KR (1) KR100526076B1 (sv)
CN (1) CN1146047C (sv)
AU (1) AU5076298A (sv)
CA (1) CA2271313A1 (sv)
SE (1) SE512661C2 (sv)
TW (1) TW367595B (sv)
WO (1) WO1998021753A1 (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045882A (ja) * 2001-07-27 2003-02-14 Nec Corp 半導体装置及びその設計方法
JP4591827B2 (ja) * 2005-05-24 2010-12-01 エルピーダメモリ株式会社 リセスチャネル構造を有するセルトランジスタを含む半導体装置およびその製造方法
US7700977B2 (en) * 2007-06-21 2010-04-20 Intersil Americas Inc. Integrated circuit with a subsurface diode
US20100117153A1 (en) * 2008-11-07 2010-05-13 Honeywell International Inc. High voltage soi cmos device and method of manufacture
CN102403321A (zh) * 2011-09-30 2012-04-04 上海新傲科技股份有限公司 半导体装置及制备方法
GB201604796D0 (en) 2015-11-10 2016-05-04 Analog Devices Global A combined isolator and power switch
US9698594B2 (en) 2015-11-10 2017-07-04 Analog Devices Global Overvoltage protection device, and a galvanic isolator in combination with an overvoltage protection device
US9935628B2 (en) 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
US9653455B1 (en) * 2015-11-10 2017-05-16 Analog Devices Global FET—bipolar transistor combination

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4139781A (en) * 1974-08-13 1979-02-13 Honeywell Inc. Logic gate circuits
CA1131801A (en) * 1978-01-18 1982-09-14 Johannes A. Appels Semiconductor device
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US4705759B1 (en) * 1978-10-13 1995-02-14 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
NL186665C (nl) * 1980-03-10 1992-01-16 Philips Nv Halfgeleiderinrichting.
US4982262A (en) * 1985-01-15 1991-01-01 At&T Bell Laboratories Inverted groove isolation technique for merging dielectrically isolated semiconductor devices
US5264719A (en) * 1986-01-07 1993-11-23 Harris Corporation High voltage lateral semiconductor device
US4823173A (en) * 1986-01-07 1989-04-18 Harris Corporation High voltage lateral MOS structure with depleted top gate region
EP0251682A3 (en) * 1986-06-25 1989-12-06 Hewlett-Packard Company Integrated bipolar-mos device
US4857772A (en) * 1987-04-27 1989-08-15 Fairchild Semiconductor Corporation BIPMOS decoder circuit
JPH0812910B2 (ja) * 1988-09-05 1996-02-07 日本電気株式会社 化合物半導体装置およびその製造方法
US5359220A (en) * 1992-12-22 1994-10-25 Hughes Aircraft Company Hybrid bipolar/field-effect power transistor in group III-V material system
SE500814C2 (sv) * 1993-01-25 1994-09-12 Ericsson Telefon Ab L M Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning

Also Published As

Publication number Publication date
CN1242874A (zh) 2000-01-26
CN1146047C (zh) 2004-04-14
WO1998021753A1 (en) 1998-05-22
EP0946983A1 (en) 1999-10-06
US6015982A (en) 2000-01-18
AU5076298A (en) 1998-06-03
KR100526076B1 (ko) 2005-11-03
KR20000053182A (ko) 2000-08-25
SE9604142D0 (sv) 1996-11-13
JP2001504275A (ja) 2001-03-27
TW367595B (en) 1999-08-21
SE512661C2 (sv) 2000-04-17
CA2271313A1 (en) 1998-05-22

Similar Documents

Publication Publication Date Title
KR970072205A (ko) 에스. 오. 아이(soi)형 트랜지스터 및 그 제조방법
KR950034767A (ko) Mis형 반도체장치
SE8703269L (sv) Foerbaettrad konstruktion hos sos-transistor
EP0805499A3 (en) High withstand voltage M I S field effect transistor and semiconductor integrated circuit
KR910017676A (ko) 박막트랜지스터
JP2001320047A (ja) 半導体装置
EP0936676A3 (en) MOS field effect transistors and its method of fabrication
SE8009091L (sv) Halvledaranordning
ATE373318T1 (de) Integration bipolarer und cmos bauelemente für 0.1 mikrometer transistoren
KR970067928A (ko) 단락 애노우드 수평형 절연 게이트 바이폴라 트랜지스터
KR960036128A (ko) 실리콘 탄화물 금속 산화물 반도체 전계효과 트랜지스터
SE9604142D0 (sv) Halvledaranordning och förfarande vid densamma
KR900013652A (ko) 감소된 온 저항을 가진 soi구조의 고전압 반도체 장치
ES2152919T3 (es) Procedimiento de utilizacion de un dispositivo semiconductor que comprende un sustrato que tiene un islote semiconductor dielectricamente aislado.
EP0268426A3 (en) High speed junction field effect transistor for use in bipolar integrated circuits
US5448104A (en) Bipolar transistor with base charge controlled by back gate bias
KR940016782A (ko) 반도체 장치
WO2006132704A3 (en) High voltage igbt semiconductor device and method of manufacture
US20030168710A1 (en) High voltage integrated circuit including bipolar transistor within high voltage island area
KR960026426A (ko) 바이폴라 반도체 장치 및 그 제조방법
KR960002806A (ko) 바이폴라 트랜지스터를 가지는 반도체 장치 및 그 제조방법
JPH0344425B2 (sv)
KR910010700A (ko) 기생전류에 보호되는 수직형 모놀리식 반도체 전원장치
KR970067618A (ko) 실리콘-온-인슐레이터(soi) 소자 및 그 제조방법
DE60044776D1 (de) LATERALER SiC-BASIERTER FELDEFFEKTTRANSITOR, DESSEN HERSTELLUNGSVERFAHREN UND DER GEBRAUCH EINES SOLCHEN TRANSISTORS

Legal Events

Date Code Title Description
NUG Patent has lapsed