TW367595B - Lateral bipolar field effect mode hybrid transistor and method for the same - Google Patents
Lateral bipolar field effect mode hybrid transistor and method for the sameInfo
- Publication number
- TW367595B TW367595B TW086117777A TW86117777A TW367595B TW 367595 B TW367595 B TW 367595B TW 086117777 A TW086117777 A TW 086117777A TW 86117777 A TW86117777 A TW 86117777A TW 367595 B TW367595 B TW 367595B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- collector region
- lateral bipolar
- same
- field effect
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 4
- 230000001419 dependent effect Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9604142A SE512661C2 (sv) | 1996-11-13 | 1996-11-13 | Lateral bipolär hybridtransistor med fälteffektmod och förfarande vid densamma |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW367595B true TW367595B (en) | 1999-08-21 |
Family
ID=20404585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086117777A TW367595B (en) | 1996-11-13 | 1997-11-26 | Lateral bipolar field effect mode hybrid transistor and method for the same |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US6015982A (zh) |
| EP (1) | EP0946983A1 (zh) |
| JP (1) | JP2001504275A (zh) |
| KR (1) | KR100526076B1 (zh) |
| CN (1) | CN1146047C (zh) |
| AU (1) | AU5076298A (zh) |
| CA (1) | CA2271313A1 (zh) |
| SE (1) | SE512661C2 (zh) |
| TW (1) | TW367595B (zh) |
| WO (1) | WO1998021753A1 (zh) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045882A (ja) * | 2001-07-27 | 2003-02-14 | Nec Corp | 半導体装置及びその設計方法 |
| JP4591827B2 (ja) * | 2005-05-24 | 2010-12-01 | エルピーダメモリ株式会社 | リセスチャネル構造を有するセルトランジスタを含む半導体装置およびその製造方法 |
| US7700977B2 (en) * | 2007-06-21 | 2010-04-20 | Intersil Americas Inc. | Integrated circuit with a subsurface diode |
| US20100117153A1 (en) * | 2008-11-07 | 2010-05-13 | Honeywell International Inc. | High voltage soi cmos device and method of manufacture |
| CN102403321A (zh) * | 2011-09-30 | 2012-04-04 | 上海新傲科技股份有限公司 | 半导体装置及制备方法 |
| GB201604796D0 (en) | 2015-11-10 | 2016-05-04 | Analog Devices Global | A combined isolator and power switch |
| US9653455B1 (en) * | 2015-11-10 | 2017-05-16 | Analog Devices Global | FET—bipolar transistor combination |
| US9698594B2 (en) | 2015-11-10 | 2017-07-04 | Analog Devices Global | Overvoltage protection device, and a galvanic isolator in combination with an overvoltage protection device |
| US9935628B2 (en) | 2015-11-10 | 2018-04-03 | Analog Devices Global | FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4139781A (en) * | 1974-08-13 | 1979-02-13 | Honeywell Inc. | Logic gate circuits |
| CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
| US4705759B1 (en) * | 1978-10-13 | 1995-02-14 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
| JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
| NL186665C (nl) * | 1980-03-10 | 1992-01-16 | Philips Nv | Halfgeleiderinrichting. |
| US4982262A (en) * | 1985-01-15 | 1991-01-01 | At&T Bell Laboratories | Inverted groove isolation technique for merging dielectrically isolated semiconductor devices |
| US4823173A (en) * | 1986-01-07 | 1989-04-18 | Harris Corporation | High voltage lateral MOS structure with depleted top gate region |
| US5264719A (en) * | 1986-01-07 | 1993-11-23 | Harris Corporation | High voltage lateral semiconductor device |
| EP0251682A3 (en) * | 1986-06-25 | 1989-12-06 | Hewlett-Packard Company | Integrated bipolar-mos device |
| US4857772A (en) * | 1987-04-27 | 1989-08-15 | Fairchild Semiconductor Corporation | BIPMOS decoder circuit |
| JPH0812910B2 (ja) * | 1988-09-05 | 1996-02-07 | 日本電気株式会社 | 化合物半導体装置およびその製造方法 |
| US5359220A (en) * | 1992-12-22 | 1994-10-25 | Hughes Aircraft Company | Hybrid bipolar/field-effect power transistor in group III-V material system |
| SE500814C2 (sv) * | 1993-01-25 | 1994-09-12 | Ericsson Telefon Ab L M | Halvledaranordning i ett tunt aktivt skikt med hög genombrottsspänning |
-
1996
- 1996-11-13 SE SE9604142A patent/SE512661C2/sv not_active IP Right Cessation
-
1997
- 1997-11-12 US US08/968,213 patent/US6015982A/en not_active Expired - Fee Related
- 1997-11-13 CA CA002271313A patent/CA2271313A1/en not_active Abandoned
- 1997-11-13 CN CNB971812209A patent/CN1146047C/zh not_active Expired - Fee Related
- 1997-11-13 WO PCT/SE1997/001908 patent/WO1998021753A1/en active IP Right Grant
- 1997-11-13 KR KR10-1999-7004140A patent/KR100526076B1/ko not_active IP Right Cessation
- 1997-11-13 AU AU50762/98A patent/AU5076298A/en not_active Abandoned
- 1997-11-13 EP EP97913624A patent/EP0946983A1/en not_active Withdrawn
- 1997-11-13 JP JP52248298A patent/JP2001504275A/ja not_active Ceased
- 1997-11-26 TW TW086117777A patent/TW367595B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1998021753A1 (en) | 1998-05-22 |
| SE9604142D0 (sv) | 1996-11-13 |
| CN1146047C (zh) | 2004-04-14 |
| SE9604142L (sv) | 1998-05-14 |
| AU5076298A (en) | 1998-06-03 |
| EP0946983A1 (en) | 1999-10-06 |
| KR100526076B1 (ko) | 2005-11-03 |
| CA2271313A1 (en) | 1998-05-22 |
| JP2001504275A (ja) | 2001-03-27 |
| US6015982A (en) | 2000-01-18 |
| CN1242874A (zh) | 2000-01-26 |
| SE512661C2 (sv) | 2000-04-17 |
| KR20000053182A (ko) | 2000-08-25 |
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