DE60130941D1 - Verbindungshalbleiterschalter für Hochfrequenzschaltvorgänge - Google Patents

Verbindungshalbleiterschalter für Hochfrequenzschaltvorgänge

Info

Publication number
DE60130941D1
DE60130941D1 DE60130941T DE60130941T DE60130941D1 DE 60130941 D1 DE60130941 D1 DE 60130941D1 DE 60130941 T DE60130941 T DE 60130941T DE 60130941 T DE60130941 T DE 60130941T DE 60130941 D1 DE60130941 D1 DE 60130941D1
Authority
DE
Germany
Prior art keywords
high frequency
compound semiconductor
semiconductor switch
frequency switching
switching operations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60130941T
Other languages
English (en)
Other versions
DE60130941T2 (de
Inventor
Tetsuro Asano
Takayoshi Higashino
Koichi Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Application granted granted Critical
Publication of DE60130941D1 publication Critical patent/DE60130941D1/de
Publication of DE60130941T2 publication Critical patent/DE60130941T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
  • Electronic Switches (AREA)
DE60130941T 2000-05-15 2001-05-15 Verbindungshalbleiterschalter für Hochfrequenzschaltvorgänge Expired - Lifetime DE60130941T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000141387A JP3831575B2 (ja) 2000-05-15 2000-05-15 化合物半導体スイッチ回路装置
JP2000141387 2000-05-15

Publications (2)

Publication Number Publication Date
DE60130941D1 true DE60130941D1 (de) 2007-11-29
DE60130941T2 DE60130941T2 (de) 2008-07-24

Family

ID=18648511

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60130941T Expired - Lifetime DE60130941T2 (de) 2000-05-15 2001-05-15 Verbindungshalbleiterschalter für Hochfrequenzschaltvorgänge

Country Status (6)

Country Link
US (1) US6873828B2 (de)
EP (1) EP1156530B1 (de)
JP (1) JP3831575B2 (de)
KR (1) KR100612786B1 (de)
DE (1) DE60130941T2 (de)
TW (1) TWI246771B (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002368193A (ja) * 2001-06-08 2002-12-20 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
JP2002368194A (ja) * 2001-06-08 2002-12-20 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置
US6853072B2 (en) * 2002-04-17 2005-02-08 Sanyo Electric Co., Ltd. Semiconductor switching circuit device and manufacturing method thereof
JP2003309130A (ja) * 2002-04-17 2003-10-31 Sanyo Electric Co Ltd 半導体スイッチ回路装置
US7212788B2 (en) * 2002-08-13 2007-05-01 Atheros Communications, Inc. Method and apparatus for signal power loss reduction in RF communication systems
US8532588B1 (en) 2002-08-13 2013-09-10 The Connectivity Patent Trust Apparatus for signal power loss reduction in RF communication systems
US20050121730A1 (en) * 2002-09-09 2005-06-09 Tetsuro Asano Protective device
JP4535668B2 (ja) * 2002-09-09 2010-09-01 三洋電機株式会社 半導体装置
JP4236442B2 (ja) * 2002-10-17 2009-03-11 三洋電機株式会社 スイッチ回路装置
JP2004260139A (ja) * 2003-02-06 2004-09-16 Sanyo Electric Co Ltd 半導体装置
US6975271B2 (en) * 2003-02-26 2005-12-13 Matsushita Electric Industrial Co., Ltd. Antenna switch module, all-in-one communication module, communication apparatus and method for manufacturing antenna switch module
JP4029169B2 (ja) * 2003-07-07 2008-01-09 株式会社村田製作所 高周波スイッチ回路
JP2005269129A (ja) * 2004-03-18 2005-09-29 Matsushita Electric Ind Co Ltd 高周波スイッチ回路
US20060086974A1 (en) * 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
JP4939749B2 (ja) * 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
JP4939750B2 (ja) * 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
JP4494423B2 (ja) * 2007-01-23 2010-06-30 住友電工デバイス・イノベーション株式会社 半導体装置
US8633521B2 (en) * 2007-09-26 2014-01-21 Stmicroelectronics N.V. Self-bootstrapping field effect diode structures and methods
US8643055B2 (en) * 2007-09-26 2014-02-04 Stmicroelectronics N.V. Series current limiter device
US8148748B2 (en) 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
EP2232559B1 (de) 2007-09-26 2019-05-15 STMicroelectronics N.V. Einstellbarer feldeffektgleichrichter
US10007761B2 (en) 2008-03-20 2018-06-26 3 Net Wise, Inc. Method and apparatus for sharing medical information
US9871512B2 (en) * 2014-08-29 2018-01-16 Skyworks Solutions, Inc. Switch stand-by mode isolation improvement
CN111294015B (zh) * 2020-02-04 2023-10-24 电子科技大学 频率可调单刀多掷滤波开关电路及电路控制方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6320041A (ja) 1986-07-12 1988-01-27 株式会社　サタケ 調質機能を有する精米機
US5081706A (en) * 1987-07-30 1992-01-14 Texas Instruments Incorporated Broadband merged switch
JP2557561B2 (ja) 1990-10-09 1996-11-27 三菱電機株式会社 半導体装置
JPH0629811A (ja) 1992-04-15 1994-02-04 Sanyo Electric Co Ltd Ｆｅｔスイッチ
JP3243892B2 (ja) 1993-05-21 2002-01-07 ソニー株式会社 信号切り替え用スイッチ
JPH07303001A (ja) 1994-05-10 1995-11-14 Hitachi Ltd 高周波スイッチ
JP3169775B2 (ja) 1994-08-29 2001-05-28 株式会社日立製作所 半導体回路、スイッチ及びそれを用いた通信機
JP3473790B2 (ja) 1995-01-13 2003-12-08 ソニー株式会社 信号切換え装置及び複合信号切換え装置
JPH08204530A (ja) * 1995-01-23 1996-08-09 Sony Corp スイツチ回路
JPH08204528A (ja) 1995-01-23 1996-08-09 Sony Corp スイツチ回路及び複合スイツチ回路
JP3322377B2 (ja) 1995-01-31 2002-09-09 ソニー株式会社 信号切換え装置
JP3441236B2 (ja) * 1995-04-24 2003-08-25 ソニー株式会社 半導体集積回路装置
JP3100111B2 (ja) * 1995-06-26 2000-10-16 株式会社エヌ・ティ・ティ・ドコモ 移動無線機のマルチバンド高周波回路
JP3332194B2 (ja) * 1995-08-10 2002-10-07 ソニー株式会社 スイツチ半導体集積回路及び通信端末装置
US5698875A (en) 1996-04-30 1997-12-16 The Whitaker Corporation Metal-semiconductor field effect transistor having reduced control voltage and well controlled pinch off voltage
US5881369A (en) * 1996-07-03 1999-03-09 Northern Telecom Limited Dual mode transceiver
KR100201814B1 (ko) * 1996-12-06 1999-06-15 윤종용 삼중 겸용 휴대전화기의 무선신호 처리장치
JP2000114950A (ja) * 1998-10-07 2000-04-21 Murata Mfg Co Ltd Ｓｐｓｔスイッチおよびｓｐｄｔスイッチおよびそれを用いた通信機
US6560443B1 (en) * 1999-05-28 2003-05-06 Nokia Corporation Antenna sharing switching circuitry for multi-transceiver mobile terminal and method therefor

Also Published As

Publication number Publication date
EP1156530A2 (de) 2001-11-21
DE60130941T2 (de) 2008-07-24
EP1156530B1 (de) 2007-10-17
TWI246771B (en) 2006-01-01
US6873828B2 (en) 2005-03-29
KR20010104671A (ko) 2001-11-26
JP3831575B2 (ja) 2006-10-11
JP2001326501A (ja) 2001-11-22
US20020024375A1 (en) 2002-02-28
EP1156530A3 (de) 2005-05-11
KR100612786B1 (ko) 2006-08-17

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Legal Events

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