DE60127252D1 - Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo - Google Patents

Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo

Info

Publication number
DE60127252D1
DE60127252D1 DE60127252T DE60127252T DE60127252D1 DE 60127252 D1 DE60127252 D1 DE 60127252D1 DE 60127252 T DE60127252 T DE 60127252T DE 60127252 T DE60127252 T DE 60127252T DE 60127252 D1 DE60127252 D1 DE 60127252D1
Authority
DE
Germany
Prior art keywords
wafer
epitaktic
doting
self
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60127252T
Other languages
English (en)
Other versions
DE60127252T2 (de
Inventor
Michael Ries
Charles Chiun-Chieh Yang
Robert W Standley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/752,222 external-priority patent/US6596095B2/en
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE60127252D1 publication Critical patent/DE60127252D1/de
Application granted granted Critical
Publication of DE60127252T2 publication Critical patent/DE60127252T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60127252T 2000-05-08 2001-04-23 Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo Expired - Lifetime DE60127252T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US752222 2000-05-08
US09/752,222 US6596095B2 (en) 2000-05-08 2000-12-29 Epitaxial silicon wafer free from autodoping and backside halo and a method and apparatus for the preparation thereof
PCT/US2001/013046 WO2001086035A1 (en) 2000-05-08 2001-04-23 Epitaxial silicon wafer free from autodoping and backside halo

Publications (2)

Publication Number Publication Date
DE60127252D1 true DE60127252D1 (de) 2007-04-26
DE60127252T2 DE60127252T2 (de) 2007-12-20

Family

ID=25025404

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60127252T Expired - Lifetime DE60127252T2 (de) 2000-05-08 2001-04-23 Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo

Country Status (5)

Country Link
EP (1) EP1287188B1 (de)
JP (1) JP4263410B2 (de)
KR (1) KR100726301B1 (de)
DE (1) DE60127252T2 (de)
WO (1) WO2001086035A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003229370A (ja) * 2001-11-30 2003-08-15 Shin Etsu Handotai Co Ltd サセプタ、気相成長装置、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
JP3541838B2 (ja) * 2002-03-28 2004-07-14 信越半導体株式会社 サセプタ、エピタキシャルウェーハの製造装置および製造方法
DE10211312A1 (de) 2002-03-14 2003-10-02 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur epitaktischen Beschichtung einer Halbleiterscheibe sowie epitaktisch beschichtete Halbleiterscheibe
JP2004172392A (ja) * 2002-11-20 2004-06-17 Komatsu Electronic Metals Co Ltd 半導体エピタキシャルウェーハの製造装置およびサセプタ並びにサセプタの支持装置
DE102004060625A1 (de) * 2004-12-16 2006-06-29 Siltronic Ag Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe
DE10328842B4 (de) * 2003-06-26 2007-03-01 Siltronic Ag Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe
US7377978B2 (en) 2003-06-26 2008-05-27 Shin-Etsu Handotai Co., Ltd. Method for producing silicon epitaxial wafer and silicon epitaxial wafer
JP4655935B2 (ja) * 2003-10-01 2011-03-23 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
JPWO2005093136A1 (ja) * 2004-03-29 2008-02-14 エピクルー株式会社 支持体並びに半導体基板の処理方法
JP3857283B2 (ja) * 2004-07-22 2006-12-13 株式会社エピクエスト 面発光レーザ作製用酸化装置
JP5140990B2 (ja) * 2006-10-27 2013-02-13 信越半導体株式会社 エピタキシャルシリコンウエーハの製造方法
DE102006055038B4 (de) 2006-11-22 2012-12-27 Siltronic Ag Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe
ITMI20070056A1 (it) * 2007-01-17 2008-07-18 Consiglio Nazionale Ricerche Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione
US20080314319A1 (en) * 2007-06-19 2008-12-25 Memc Electronic Materials, Inc. Susceptor for improving throughput and reducing wafer damage
WO2009060770A1 (ja) * 2007-11-08 2009-05-14 Sumco Corporation 気相成長用サセプタ
JP5195370B2 (ja) * 2008-12-05 2013-05-08 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
US9181619B2 (en) 2010-02-26 2015-11-10 Fujifilm Corporation Physical vapor deposition with heat diffuser
KR101339591B1 (ko) * 2012-01-13 2013-12-10 주식회사 엘지실트론 서셉터
US9401271B2 (en) 2012-04-19 2016-07-26 Sunedison Semiconductor Limited (Uen201334164H) Susceptor assemblies for supporting wafers in a reactor apparatus
KR102150728B1 (ko) * 2013-12-16 2020-09-01 에스케이실트론 주식회사 공정 챔버의 세정 장치 및 세정 방법
EP3275008B1 (de) * 2015-03-25 2022-02-23 Applied Materials, Inc. Kammerkomponenten für eine epitaktische wachstumsvorrichtung
JP6459801B2 (ja) * 2015-06-26 2019-01-30 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
CN111286723A (zh) * 2018-12-10 2020-06-16 昭和电工株式会社 基座和化学气相沉积装置
WO2022013906A1 (ja) * 2020-07-13 2022-01-20 三菱電機株式会社 ＳｉＣエピタキシャル基板の製造装置及び製造方法
JP7484798B2 (ja) 2021-04-05 2024-05-16 三菱電機株式会社 半導体製造装置および半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8602357A (nl) * 1985-10-07 1987-05-04 Epsilon Ltd Partnership Inrichting en werkwijze voor het chemisch uit damp neerslaan met gebruik van een axiaal symmetrische gasstroming.
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
JP3725598B2 (ja) * 1996-01-12 2005-12-14 東芝セラミックス株式会社 エピタキシャルウェハの製造方法
JP3467960B2 (ja) * 1996-02-29 2003-11-17 信越半導体株式会社 半導体単結晶薄膜の製造方法および装置
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
DE69908965T2 (de) * 1998-10-14 2004-05-13 Memc Electronic Materials, Inc. Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte
US6454854B1 (en) * 1998-10-29 2002-09-24 Shin-Etsu Handotai Co., Ltd. Semiconductor wafer and production method therefor
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering

Also Published As

Publication number Publication date
WO2001086035A1 (en) 2001-11-15
JP4263410B2 (ja) 2009-05-13
KR100726301B1 (ko) 2007-06-13
EP1287188B1 (de) 2007-03-14
EP1287188A1 (de) 2003-03-05
KR20030009481A (ko) 2003-01-29
JP2003532612A (ja) 2003-11-05
DE60127252T2 (de) 2007-12-20

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