ITMI20070056A1 - Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione - Google Patents
Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazioneInfo
- Publication number
- ITMI20070056A1 ITMI20070056A1 IT000056A ITMI20070056A ITMI20070056A1 IT MI20070056 A1 ITMI20070056 A1 IT MI20070056A1 IT 000056 A IT000056 A IT 000056A IT MI20070056 A ITMI20070056 A IT MI20070056A IT MI20070056 A1 ITMI20070056 A1 IT MI20070056A1
- Authority
- IT
- Italy
- Prior art keywords
- optoelectronic
- construction
- electronic
- semiconductor substrate
- processing devices
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT000056A ITMI20070056A1 (it) | 2007-01-17 | 2007-01-17 | Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione |
PCT/IT2008/000025 WO2008087686A2 (en) | 2007-01-17 | 2008-01-17 | Semiconductor substrate suitable for the realisation of electronic and/ or optoelectronic devices and relative manufacturing process |
JP2009546071A JP2010516602A (ja) | 2007-01-17 | 2008-01-17 | 電子および/または光電子デバイスおよび関連する製造プロセス実現化に適した半導体基板 |
EP08720195.0A EP2122668B1 (en) | 2007-01-17 | 2008-01-17 | Semiconductor substrate suitable for the realisation of electronic and/ or optoelectronic devices and related manufacturing process |
US12/504,167 US20100013057A1 (en) | 2007-01-17 | 2009-07-16 | Semiconductor substrate suitable for the realisation of electronic and/or optoelectronic devices and relative manufacturing process |
US13/299,935 US8890103B2 (en) | 2007-01-17 | 2011-11-18 | Semiconductor substrate suitable for the realisation of electronic and/or optoelectronic devices and relative manufacturing process |
US14/513,948 US20150031193A1 (en) | 2007-01-17 | 2014-10-14 | Semiconductor substrate suitable for the realization of electronic and/or optoelectronic devices and relative manufacturing process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT000056A ITMI20070056A1 (it) | 2007-01-17 | 2007-01-17 | Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione |
Publications (1)
Publication Number | Publication Date |
---|---|
ITMI20070056A1 true ITMI20070056A1 (it) | 2008-07-18 |
Family
ID=39473781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT000056A ITMI20070056A1 (it) | 2007-01-17 | 2007-01-17 | Substrato semiconduttore adatto alla realizzazione di dispositivi elettronici e-o optoelettronici e relativo processo di fabbricazione |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100013057A1 (it) |
EP (1) | EP2122668B1 (it) |
JP (1) | JP2010516602A (it) |
IT (1) | ITMI20070056A1 (it) |
WO (1) | WO2008087686A2 (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9277792B2 (en) | 2010-08-24 | 2016-03-08 | Board Of Trustees Of Michigan State University | Multicolored single crystal diamond gemstones and methods for forming the same |
US9166002B2 (en) | 2010-09-02 | 2015-10-20 | Board Of Trustees Of Michigan State University | N-doped single crystal diamond substrates and methods therefor |
JP5678721B2 (ja) * | 2011-02-28 | 2015-03-04 | 新日鐵住金株式会社 | 炭化珪素単結晶育成用種結晶及び炭化珪素単結晶の製造方法 |
KR101249420B1 (ko) | 2012-12-17 | 2013-04-03 | 주식회사 신경 | 와이어 조임장치 |
CN116988049B (zh) * | 2023-09-22 | 2024-01-16 | 新美光(苏州)半导体科技有限公司 | 一种化学气相沉积设备及方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2111988A (en) | 1936-03-03 | 1938-03-22 | John H Percival | Aeroplane |
JPH0597582A (ja) * | 1991-10-09 | 1993-04-20 | Matsushita Electric Ind Co Ltd | ダイヤモンド薄膜の堆積方法 |
US6864570B2 (en) * | 1993-12-17 | 2005-03-08 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
JPH09309794A (ja) * | 1996-05-24 | 1997-12-02 | Sumitomo Electric Ind Ltd | ダイヤモンド膜およびその合成方法 |
EP0996967B1 (de) * | 1997-06-30 | 2008-11-19 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Verfahren zur Herstellung von schichtartigen Gebilden auf einem Halbleitersubstrat, Halbleitersubstrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente |
US6161499A (en) * | 1997-07-07 | 2000-12-19 | Cvd Diamond Corporation | Apparatus and method for nucleation and deposition of diamond using hot-filament DC plasma |
JP2000022185A (ja) * | 1998-07-03 | 2000-01-21 | Sharp Corp | 太陽電池セル及びその製造方法 |
JP3889889B2 (ja) * | 1998-10-05 | 2007-03-07 | 財団法人ファインセラミックスセンター | カーボンナノチューブ膜の製造方法 |
JP2000228364A (ja) * | 1999-02-05 | 2000-08-15 | Hitachi Ltd | エピタキシャルウェハの製造方法および半導体装置の製造方法 |
US6403451B1 (en) * | 2000-02-09 | 2002-06-11 | Noerh Carolina State University | Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts |
JP4263410B2 (ja) * | 2000-12-29 | 2009-05-13 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | オートドーピングおよび後面ハローがないエピタキシャルシリコンウエハ |
JP2003068655A (ja) | 2001-08-27 | 2003-03-07 | Hoya Corp | 化合物単結晶の製造方法 |
US6824609B2 (en) * | 2001-08-28 | 2004-11-30 | Canon Kabushiki Kaisha | Liquid phase growth method and liquid phase growth apparatus |
WO2003065465A2 (en) * | 2002-01-28 | 2003-08-07 | Showa Denko K.K. | Boron phosphide-based semiconductor device, production method thereof, light-emitting diode and boron phosphide-based semiconductor layer |
FR2836159B1 (fr) * | 2002-02-15 | 2004-05-07 | Centre Nat Rech Scient | Procede de formation de couche de carbure de silicium ou de nitrure d'element iii sur un substrat adapte |
JP3760997B2 (ja) * | 2003-05-21 | 2006-03-29 | サンケン電気株式会社 | 半導体基体 |
US7718469B2 (en) | 2004-03-05 | 2010-05-18 | The University Of North Carolina At Charlotte | Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
JP2006008432A (ja) * | 2004-06-23 | 2006-01-12 | Toshiba Ceramics Co Ltd | 化合物半導体成長用基板及びその製造方法 |
-
2007
- 2007-01-17 IT IT000056A patent/ITMI20070056A1/it unknown
-
2008
- 2008-01-17 JP JP2009546071A patent/JP2010516602A/ja active Pending
- 2008-01-17 EP EP08720195.0A patent/EP2122668B1/en not_active Not-in-force
- 2008-01-17 WO PCT/IT2008/000025 patent/WO2008087686A2/en active Application Filing
-
2009
- 2009-07-16 US US12/504,167 patent/US20100013057A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20100013057A1 (en) | 2010-01-21 |
EP2122668B1 (en) | 2018-07-04 |
JP2010516602A (ja) | 2010-05-20 |
EP2122668A2 (en) | 2009-11-25 |
WO2008087686A2 (en) | 2008-07-24 |
WO2008087686A3 (en) | 2008-12-24 |
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