ATE345577T1 - Plasma-bearbeitungs-kammer und verfahren zur kontrolle von verunreinigungen - Google Patents

Plasma-bearbeitungs-kammer und verfahren zur kontrolle von verunreinigungen

Info

Publication number
ATE345577T1
ATE345577T1 AT99915049T AT99915049T ATE345577T1 AT E345577 T1 ATE345577 T1 AT E345577T1 AT 99915049 T AT99915049 T AT 99915049T AT 99915049 T AT99915049 T AT 99915049T AT E345577 T1 ATE345577 T1 AT E345577T1
Authority
AT
Austria
Prior art keywords
processing chamber
plasma processing
substrate holder
exposed surface
distribution plate
Prior art date
Application number
AT99915049T
Other languages
English (en)
Inventor
Alan M Schoepp
Thomas E Wicker
Robert A Maraschin
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE345577T1 publication Critical patent/ATE345577T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Arc Welding In General (AREA)
AT99915049T 1998-03-31 1999-03-26 Plasma-bearbeitungs-kammer und verfahren zur kontrolle von verunreinigungen ATE345577T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US5090298A 1998-03-31 1998-03-31

Publications (1)

Publication Number Publication Date
ATE345577T1 true ATE345577T1 (de) 2006-12-15

Family

ID=21968184

Family Applications (1)

Application Number Title Priority Date Filing Date
AT99915049T ATE345577T1 (de) 1998-03-31 1999-03-26 Plasma-bearbeitungs-kammer und verfahren zur kontrolle von verunreinigungen

Country Status (7)

Country Link
EP (1) EP1068632B1 (de)
JP (1) JP4554815B2 (de)
KR (1) KR100602072B1 (de)
AT (1) ATE345577T1 (de)
DE (1) DE69934000T2 (de)
TW (1) TW575676B (de)
WO (1) WO1999050886A1 (de)

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US6129808A (en) 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
EP1230664B1 (de) * 1999-11-15 2008-05-07 Lam Research Corporation Behandlungsvorrichtungen
US6673198B1 (en) 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
JP2001203188A (ja) * 2000-01-19 2001-07-27 Ibiden Co Ltd 半導体製造装置用部品及び半導体製造装置
JP2001203190A (ja) * 2000-01-20 2001-07-27 Ibiden Co Ltd 半導体製造装置用部品及び半導体製造装置
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6506254B1 (en) 2000-06-30 2003-01-14 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US6837966B2 (en) 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7147749B2 (en) 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7166200B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US7166166B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
KR100772740B1 (ko) 2002-11-28 2007-11-01 동경 엘렉트론 주식회사 플라즈마 처리 용기 내부재
JP4532479B2 (ja) 2003-03-31 2010-08-25 東京エレクトロン株式会社 処理部材のためのバリア層およびそれと同じものを形成する方法。
CN100495413C (zh) 2003-03-31 2009-06-03 东京毅力科创株式会社 用于邻接在处理元件上的相邻覆层的方法
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7700494B2 (en) 2004-12-30 2010-04-20 Tokyo Electron Limited, Inc. Low-pressure removal of photoresist and etch residue
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
KR100719804B1 (ko) * 2005-08-08 2007-05-18 주식회사 아이피에스 다중 안테나 구조
KR100694796B1 (ko) * 2005-09-26 2007-03-14 세메스 주식회사 평면표시패널 처리챔버의 기액 분리장치
KR100855323B1 (ko) * 2006-12-27 2008-09-04 세메스 주식회사 공정 챔버 및 플라즈마 처리 장치
US20090151870A1 (en) * 2007-12-14 2009-06-18 Tokyo Electron Limited Silicon carbide focus ring for plasma etching system
KR101398585B1 (ko) * 2012-10-08 2014-06-27 주식회사 코디에스 플라즈마 에칭 장치 및 배플
US10074887B2 (en) 2016-06-29 2018-09-11 Google Llc Antenna chamber with heat venting
US10418223B1 (en) * 2018-03-30 2019-09-17 Varian Semiconductor Equipment Associates, Inc. Foil sheet assemblies for ion implantation
US11239060B2 (en) 2018-05-29 2022-02-01 Taiwan Semiconductor Manufacturing Company, Ltd. Ion beam etching chamber with etching by-product redistributor
JP7182916B2 (ja) * 2018-06-26 2022-12-05 東京エレクトロン株式会社 プラズマ処理装置
US11776793B2 (en) * 2020-11-13 2023-10-03 Applied Materials, Inc. Plasma source with ceramic electrode plate
CN115863133A (zh) * 2022-12-07 2023-03-28 拓荆键科(海宁)半导体设备有限公司 一种用于晶圆切割后活化预处理的真空腔室及方法

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JPH0741153Y2 (ja) * 1987-10-26 1995-09-20 東京応化工業株式会社 試料処理用電極
US5182059A (en) * 1989-01-17 1993-01-26 Ngk Insulators, Ltd. Process for producing high density SiC sintered bodies
GB8905073D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
US5292399A (en) * 1990-04-19 1994-03-08 Applied Materials, Inc. Plasma etching apparatus with conductive means for inhibiting arcing
US5085727A (en) * 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
JPH0464883A (ja) * 1990-07-04 1992-02-28 Mitsubishi Electric Corp 冷凍・冷蔵庫の霜取装置
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
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US5441568A (en) * 1994-07-15 1995-08-15 Applied Materials, Inc. Exhaust baffle for uniform gas flow pattern
JPH08115903A (ja) * 1994-10-14 1996-05-07 Fujitsu Ltd 半導体装置の製造方法およびプラズマエッチング装置
EP0756309A1 (de) * 1995-07-26 1997-01-29 Applied Materials, Inc. Plasmavorrichtungen zur Bearbeitung von Substraten
US6156663A (en) * 1995-10-03 2000-12-05 Hitachi, Ltd. Method and apparatus for plasma processing
US5904778A (en) * 1996-07-26 1999-05-18 Applied Materials, Inc. Silicon carbide composite article particularly useful for plasma reactors
EP0826646B1 (de) * 1996-08-27 2003-06-18 Asahi Glass Company Ltd. Hoch korrosionsbeständiges Siliziumcarbidprodukt

Also Published As

Publication number Publication date
KR20010042268A (ko) 2001-05-25
JP2002510858A (ja) 2002-04-09
EP1068632B1 (de) 2006-11-15
JP4554815B2 (ja) 2010-09-29
DE69934000D1 (de) 2006-12-28
TW575676B (en) 2004-02-11
EP1068632A1 (de) 2001-01-17
WO1999050886A1 (en) 1999-10-07
KR100602072B1 (ko) 2006-07-14
DE69934000T2 (de) 2007-09-20

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