ATE416474T1 - Verfahren zur kontrolle von partikeln und plasmabehandlungskammer - Google Patents

Verfahren zur kontrolle von partikeln und plasmabehandlungskammer

Info

Publication number
ATE416474T1
ATE416474T1 AT97941540T AT97941540T ATE416474T1 AT E416474 T1 ATE416474 T1 AT E416474T1 AT 97941540 T AT97941540 T AT 97941540T AT 97941540 T AT97941540 T AT 97941540T AT E416474 T1 ATE416474 T1 AT E416474T1
Authority
AT
Austria
Prior art keywords
control method
plasma treatment
treatment chamber
particle control
substrate holder
Prior art date
Application number
AT97941540T
Other languages
English (en)
Inventor
Thomas Wicker
Robert Maraschin
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE416474T1 publication Critical patent/ATE416474T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT97941540T 1996-09-30 1997-09-17 Verfahren zur kontrolle von partikeln und plasmabehandlungskammer ATE416474T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/722,371 US5993594A (en) 1996-09-30 1996-09-30 Particle controlling method and apparatus for a plasma processing chamber

Publications (1)

Publication Number Publication Date
ATE416474T1 true ATE416474T1 (de) 2008-12-15

Family

ID=24901571

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97941540T ATE416474T1 (de) 1996-09-30 1997-09-17 Verfahren zur kontrolle von partikeln und plasmabehandlungskammer

Country Status (7)

Country Link
US (2) US5993594A (de)
EP (1) EP0938740B1 (de)
JP (2) JP4263245B2 (de)
KR (2) KR100665649B1 (de)
AT (1) ATE416474T1 (de)
DE (1) DE69739145D1 (de)
WO (1) WO1998014980A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107600735A (zh) * 2017-10-22 2018-01-19 惠州市通用纸业有限公司 一种便于取拿纸巾的环保型双用纸巾包装袋

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010049196A1 (en) * 1997-09-09 2001-12-06 Roger Patrick Apparatus for improving etch uniformity and methods therefor
US6120660A (en) * 1998-02-11 2000-09-19 Silicon Genesis Corporation Removable liner design for plasma immersion ion implantation
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6123791A (en) 1998-07-29 2000-09-26 Applied Materials, Inc. Ceramic composition for an apparatus and method for processing a substrate
US6074953A (en) * 1998-08-28 2000-06-13 Micron Technology, Inc. Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
US6491042B1 (en) * 1998-12-07 2002-12-10 Taiwan Semiconductor Manufacturing Company Post etching treatment process for high density oxide etcher
JP3542514B2 (ja) * 1999-01-19 2004-07-14 株式会社日立製作所 ドライエッチング装置
US6408786B1 (en) 1999-09-23 2002-06-25 Lam Research Corporation Semiconductor processing equipment having tiled ceramic liner
WO2001024216A2 (en) * 1999-09-30 2001-04-05 Lam Research Corporation Pretreated gas distribution plate
US6673198B1 (en) * 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6391146B1 (en) 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
US6440219B1 (en) * 2000-06-07 2002-08-27 Simplus Systems Corporation Replaceable shielding apparatus
DE10134806A1 (de) * 2000-08-10 2002-06-13 Stratos Lightwave Inc N D Ges Dampfphasenreaktionsvorrichtung mit Diaphragma für variable Stromverteilung
US7128804B2 (en) * 2000-12-29 2006-10-31 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
JP5079949B2 (ja) * 2001-04-06 2012-11-21 東京エレクトロン株式会社 処理装置および処理方法
US6720259B2 (en) * 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US7479304B2 (en) * 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
TWI225668B (en) * 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
US7527706B2 (en) * 2002-10-10 2009-05-05 Tokyo Electron Limited Plasma processing apparatus, process vessel for plasma processing apparatus and dielectric plate for plasma processing apparatus
US20060226003A1 (en) * 2003-01-22 2006-10-12 John Mize Apparatus and methods for ionized deposition of a film or thin layer
US6749684B1 (en) 2003-06-10 2004-06-15 International Business Machines Corporation Method for improving CVD film quality utilizing polysilicon getterer
US7713380B2 (en) * 2004-01-27 2010-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method and apparatus for backside polymer reduction in dry-etch process
US8540843B2 (en) * 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US7578945B2 (en) * 2004-09-27 2009-08-25 Lam Research Corporation Method and apparatus for tuning a set of plasma processing steps
US7138067B2 (en) * 2004-09-27 2006-11-21 Lam Research Corporation Methods and apparatus for tuning a set of plasma processing steps
US20060151116A1 (en) * 2005-01-12 2006-07-13 Taiwan Semiconductor Manufacturing Co., Ltd. Focus rings, apparatus in chamber, contact hole and method of forming contact hole
US9659758B2 (en) 2005-03-22 2017-05-23 Honeywell International Inc. Coils utilized in vapor deposition applications and methods of production
US20060278520A1 (en) * 2005-06-13 2006-12-14 Lee Eal H Use of DC magnetron sputtering systems
US20070079936A1 (en) * 2005-09-29 2007-04-12 Applied Materials, Inc. Bonded multi-layer RF window
US20070235320A1 (en) * 2006-04-06 2007-10-11 Applied Materials, Inc. Reactive sputtering chamber with gas distribution tubes
KR100798352B1 (ko) 2006-05-24 2008-01-28 주식회사 뉴파워 프라즈마 다중 배열된 방전실을 갖는 플라즈마 반응기 및 이를이용한 플라즈마 처리 시스템
US7674662B2 (en) * 2006-07-19 2010-03-09 Applied Materials, Inc. Process for making thin film field effect transistors using zinc oxide
US10622194B2 (en) 2007-04-27 2020-04-14 Applied Materials, Inc. Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
US10242888B2 (en) 2007-04-27 2019-03-26 Applied Materials, Inc. Semiconductor processing apparatus with a ceramic-comprising surface which exhibits fracture toughness and halogen plasma resistance
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
US7972471B2 (en) * 2007-06-29 2011-07-05 Lam Research Corporation Inductively coupled dual zone processing chamber with single planar antenna
TWI434420B (zh) 2007-08-02 2014-04-11 Applied Materials Inc 使用薄膜半導體材料的薄膜式電晶體
US8202393B2 (en) * 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
JP5567486B2 (ja) * 2007-10-31 2014-08-06 ラム リサーチ コーポレーション 窒化シリコン−二酸化シリコン高寿命消耗プラズマ処理構成部品
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
WO2009117438A2 (en) 2008-03-20 2009-09-24 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US7879698B2 (en) * 2008-03-24 2011-02-01 Applied Materials, Inc. Integrated process system and process sequence for production of thin film transistor arrays using doped or compounded metal oxide semiconductor
US8258511B2 (en) 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
KR101013511B1 (ko) 2008-08-12 2011-02-10 주식회사 맥시스 라이너 어셈블리 및 이를 구비하는 플라즈마 처리 장치
US8313612B2 (en) * 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
WO2011037829A2 (en) * 2009-09-24 2011-03-31 Applied Materials, Inc. Methods of fabricating metal oxide or metal oxynitride tfts using wet process for source-drain metal etch
US8840763B2 (en) 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
KR101757920B1 (ko) 2009-10-27 2017-07-14 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 플라즈마 처리 방법
JP5592098B2 (ja) 2009-10-27 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US8741097B2 (en) 2009-10-27 2014-06-03 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5694721B2 (ja) * 2009-10-27 2015-04-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9120985B2 (en) 2010-05-26 2015-09-01 Exxonmobil Research And Engineering Company Corrosion resistant gasifier components
US8562785B2 (en) * 2011-05-31 2013-10-22 Lam Research Corporation Gas distribution showerhead for inductively coupled plasma etch reactor
JP5617817B2 (ja) * 2011-10-27 2014-11-05 パナソニック株式会社 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法
WO2013078420A2 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Symmetric rf return path liner
US10115565B2 (en) 2012-03-02 2018-10-30 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method
US20140097752A1 (en) * 2012-10-09 2014-04-10 Varian Semiconductor Equipment Associates, Inc. Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
JP2014149983A (ja) * 2013-02-01 2014-08-21 Toshiba Corp プラズマ処理装置用電極とその製造方法、及びプラズマ処理装置
US8893702B2 (en) 2013-02-20 2014-11-25 Lam Research Corporation Ductile mode machining methods for hard and brittle components of plasma processing apparatuses
US20140356985A1 (en) 2013-06-03 2014-12-04 Lam Research Corporation Temperature controlled substrate support assembly
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
US10504700B2 (en) * 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US20170211185A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers
CN109075059B (zh) * 2016-06-15 2023-12-01 应用材料公司 用于高功率等离子体蚀刻处理的气体分配板组件
US10504720B2 (en) * 2016-11-29 2019-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Etching using chamber with top plate formed of non-oxygen containing material
US11183373B2 (en) 2017-10-11 2021-11-23 Honeywell International Inc. Multi-patterned sputter traps and methods of making
CN112071733B (zh) * 2019-06-10 2024-03-12 中微半导体设备(上海)股份有限公司 用于真空处理设备的内衬装置和真空处理设备
JP7426709B2 (ja) * 2019-10-23 2024-02-02 株式会社イー・エム・ディー プラズマ源
US12562355B2 (en) * 2021-04-13 2026-02-24 Applied Materials, Inc. Isolator for processing chambers
KR102646591B1 (ko) * 2022-05-13 2024-03-12 세메스 주식회사 기판 처리 장치

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445776A (en) * 1980-10-20 1995-08-29 Kabushiki Kaisha Kobe Seiko Sho Method for producing high density sintered silicon nitride (Si3 N.sub.4
US4340462A (en) * 1981-02-13 1982-07-20 Lam Research Corporation Adjustable electrode plasma processing chamber
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
ATE42267T1 (de) * 1986-11-25 1989-05-15 Battelle Memorial Institute Zusammensetzung von pulverigem siliziumnitrid, verstaerkt mit siliziumcarbid-whiskern, und verwendung derselben zur herstellung von sinterkoerpern.
US5262029A (en) * 1988-05-23 1993-11-16 Lam Research Method and system for clamping semiconductor wafers
JPH02229431A (ja) * 1989-03-02 1990-09-12 Fujitsu Ltd 半導体装置の製造方法
GB8905073D0 (en) * 1989-03-06 1989-04-19 Nordiko Ltd Ion gun
JPH02298024A (ja) * 1989-05-12 1990-12-10 Tadahiro Omi リアクティブイオンエッチング装置
US4948458A (en) * 1989-08-14 1990-08-14 Lam Research Corporation Method and apparatus for producing magnetically-coupled planar plasma
US5304279A (en) * 1990-08-10 1994-04-19 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US5200232A (en) * 1990-12-11 1993-04-06 Lam Research Corporation Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors
JPH05198534A (ja) * 1992-01-20 1993-08-06 Sony Corp ドライエッチング方法
US5241245A (en) * 1992-05-06 1993-08-31 International Business Machines Corporation Optimized helical resonator for plasma processing
US5226967A (en) * 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5401350A (en) * 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
JPH06310065A (ja) * 1993-04-26 1994-11-04 Nissin Electric Co Ltd イオン源装置
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
JP3276023B2 (ja) * 1993-10-20 2002-04-22 東京エレクトロン株式会社 プラズマ処理装置の制御方法
US5529657A (en) * 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
GB9321489D0 (en) * 1993-10-19 1993-12-08 Central Research Lab Ltd Plasma processing
TW296534B (de) * 1993-12-17 1997-01-21 Tokyo Electron Co Ltd
JP3308091B2 (ja) * 1994-02-03 2002-07-29 東京エレクトロン株式会社 表面処理方法およびプラズマ処理装置
US5580385A (en) * 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
US5746875A (en) * 1994-09-16 1998-05-05 Applied Materials, Inc. Gas injection slit nozzle for a plasma process reactor
US5762714A (en) * 1994-10-18 1998-06-09 Applied Materials, Inc. Plasma guard for chamber equipped with electrostatic chuck
US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5824605A (en) 1995-07-31 1998-10-20 Lam Research Corporation Gas dispersion window for plasma apparatus and method of use thereof
US5863376A (en) 1996-06-05 1999-01-26 Lam Research Corporation Temperature controlling method and apparatus for a plasma processing chamber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107600735A (zh) * 2017-10-22 2018-01-19 惠州市通用纸业有限公司 一种便于取拿纸巾的环保型双用纸巾包装袋

Also Published As

Publication number Publication date
EP0938740A1 (de) 1999-09-01
KR20000048585A (ko) 2000-07-25
KR100665649B1 (ko) 2007-01-09
KR100615067B1 (ko) 2006-08-22
KR20060029592A (ko) 2006-04-06
EP0938740B1 (de) 2008-12-03
JP2008235924A (ja) 2008-10-02
DE69739145D1 (de) 2009-01-15
JP4891287B2 (ja) 2012-03-07
JP4263245B2 (ja) 2009-05-13
US6251793B1 (en) 2001-06-26
US5993594A (en) 1999-11-30
WO1998014980A1 (en) 1998-04-09
JP2001501379A (ja) 2001-01-30

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