DE60044777D1 - Siliziumwafer und dessen herstellung - Google Patents

Siliziumwafer und dessen herstellung

Info

Publication number
DE60044777D1
DE60044777D1 DE60044777T DE60044777T DE60044777D1 DE 60044777 D1 DE60044777 D1 DE 60044777D1 DE 60044777 T DE60044777 T DE 60044777T DE 60044777 T DE60044777 T DE 60044777T DE 60044777 D1 DE60044777 D1 DE 60044777D1
Authority
DE
Germany
Prior art keywords
manufacture
silicon wafer
wafer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60044777T
Other languages
English (en)
Inventor
Hiroshi Takeno
Hideki Shigeno
Makoto Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE60044777D1 publication Critical patent/DE60044777D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE60044777T 1999-11-12 2000-11-07 Siliziumwafer und dessen herstellung Expired - Lifetime DE60044777D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32224299A JP3787472B2 (ja) 1999-11-12 1999-11-12 シリコンウエーハおよびその製造方法ならびにシリコンウエーハの評価方法
PCT/JP2000/007808 WO2001036718A1 (fr) 1999-11-12 2000-11-07 Plaquette de silicium, son procede de production et procede d'evaluation pour plaquette de silicium

Publications (1)

Publication Number Publication Date
DE60044777D1 true DE60044777D1 (de) 2010-09-16

Family

ID=18141507

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60044777T Expired - Lifetime DE60044777D1 (de) 1999-11-12 2000-11-07 Siliziumwafer und dessen herstellung

Country Status (7)

Country Link
US (1) US6544490B1 (de)
EP (1) EP1170404B1 (de)
JP (1) JP3787472B2 (de)
KR (2) KR100747726B1 (de)
DE (1) DE60044777D1 (de)
TW (1) TWI222469B (de)
WO (1) WO2001036718A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3994665B2 (ja) * 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
JP4646440B2 (ja) * 2001-05-28 2011-03-09 信越半導体株式会社 窒素ドープアニールウエーハの製造方法
EP1408540A4 (de) * 2001-06-28 2008-12-10 Shinetsu Handotai Kk Herstellungsverfahren für einen ausheiz-wafer und ausheiz-wafer
JP4092946B2 (ja) 2002-05-09 2008-05-28 信越半導体株式会社 シリコン単結晶ウエーハ及びエピタキシャルウエーハ並びにシリコン単結晶の製造方法
EP1598452B1 (de) * 2003-02-25 2015-10-14 SUMCO Corporation Verfahren zum ziehen eines siliziumeinkristalls, verfahren zur herstellung eines silizium-wafers, und verfahren zur herstellung eines soi-substrats
US7014704B2 (en) * 2003-06-06 2006-03-21 Sumitomo Mitsubishi Silicon Corporation Method for growing silicon single crystal
JP2006093645A (ja) * 2004-08-24 2006-04-06 Toshiba Ceramics Co Ltd シリコンウェーハの製造方法
JP5121139B2 (ja) 2005-12-27 2013-01-16 ジルトロニック アクチエンゲゼルシャフト アニールウエハの製造方法
DE102008046617B4 (de) 2008-09-10 2016-02-04 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung
JP5440564B2 (ja) * 2011-07-14 2014-03-12 信越半導体株式会社 結晶欠陥の検出方法
EP2943974B1 (de) * 2013-01-08 2021-01-13 SK Siltron Co., Ltd. Verfahren zur erkennung von defekten in siliciumeinkristallwafer
JP6119680B2 (ja) 2014-06-25 2017-04-26 信越半導体株式会社 半導体基板の欠陥領域の評価方法
JP6100226B2 (ja) * 2014-11-26 2017-03-22 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
KR101759876B1 (ko) * 2015-07-01 2017-07-31 주식회사 엘지실트론 웨이퍼 및 웨이퍼 결함 분석 방법
KR101721211B1 (ko) 2016-03-31 2017-03-29 주식회사 엘지실트론 단결정 실리콘 웨이퍼 분석 방법 및 이 방법에 의해 제조된 웨이퍼
CN107068676B (zh) * 2017-03-13 2019-08-27 Oppo广东移动通信有限公司 一种预设规格芯片、制造方法及移动终端
JP6927150B2 (ja) 2018-05-29 2021-08-25 信越半導体株式会社 シリコン単結晶の製造方法
CN110389108A (zh) * 2019-08-16 2019-10-29 西安奕斯伟硅片技术有限公司 一种单晶硅缺陷区域的检测方法及装置
JP2021130577A (ja) * 2020-02-19 2021-09-09 グローバルウェーハズ・ジャパン株式会社 半導体シリコンウェーハの製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0890662A (ja) * 1994-09-27 1996-04-09 Niigata Polymer Kk 成形品の冷却搬送装置
JP3085146B2 (ja) * 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JP2701806B2 (ja) * 1995-08-21 1998-01-21 日本電気株式会社 ファイル同期方式
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP3747123B2 (ja) * 1997-11-21 2006-02-22 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ
JP3955375B2 (ja) * 1998-01-19 2007-08-08 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
TW589415B (en) * 1998-03-09 2004-06-01 Shinetsu Handotai Kk Method for producing silicon single crystal wafer and silicon single crystal wafer
JPH11314997A (ja) * 1998-05-01 1999-11-16 Shin Etsu Handotai Co Ltd 半導体シリコン単結晶ウェーハの製造方法
DE19823962A1 (de) * 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Einkristalls
US6077343A (en) * 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it

Also Published As

Publication number Publication date
EP1170404B1 (de) 2010-08-04
JP2001139396A (ja) 2001-05-22
US6544490B1 (en) 2003-04-08
KR20060134228A (ko) 2006-12-27
KR20010102971A (ko) 2001-11-17
KR100774607B1 (ko) 2007-11-09
JP3787472B2 (ja) 2006-06-21
EP1170404A4 (de) 2003-06-11
EP1170404A1 (de) 2002-01-09
TWI222469B (en) 2004-10-21
KR100747726B1 (ko) 2007-08-08
WO2001036718A1 (fr) 2001-05-25

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