KR100774607B1 - 실리콘웨이퍼의 평가방법 - Google Patents
실리콘웨이퍼의 평가방법 Download PDFInfo
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- KR100774607B1 KR100774607B1 KR1020067025568A KR20067025568A KR100774607B1 KR 100774607 B1 KR100774607 B1 KR 100774607B1 KR 1020067025568 A KR1020067025568 A KR 1020067025568A KR 20067025568 A KR20067025568 A KR 20067025568A KR 100774607 B1 KR100774607 B1 KR 100774607B1
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 238000011156 evaluation Methods 0.000 title description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 95
- 239000001301 oxygen Substances 0.000 claims abstract description 94
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 78
- 230000007547 defect Effects 0.000 claims abstract description 73
- 239000002244 precipitate Substances 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims description 28
- 239000013078 crystal Substances 0.000 abstract description 90
- 238000001556 precipitation Methods 0.000 abstract description 74
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 48
- 230000008569 process Effects 0.000 abstract description 41
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 24
- 238000002425 crystallisation Methods 0.000 abstract description 20
- 230000008025 crystallization Effects 0.000 abstract description 20
- 230000002950 deficient Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 75
- 238000009826 distribution Methods 0.000 description 20
- 239000000047 product Substances 0.000 description 10
- 239000011800 void material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 238000005247 gettering Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 239000000112 cooling gas Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000003325 tomography Methods 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005189 flocculation Methods 0.000 description 2
- 230000016615 flocculation Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000003102 growth factor Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Abstract
Description
Claims (1)
- 쵸크랄스키법에 의해 제작된 실리콘 웨이퍼의 결함영역의 평가방법에 있어서, 아래의 공정에 의해 측정된 적어도 2개의 산소석출물밀도를 비교하는 것에 의해 평가대상으로 되는 실리콘 웨이퍼의 결함영역을 평가하는 방법.(1) 평가대상으로 되는 웨이퍼를 2매이상의 웨이퍼편(A, B, ···)으로 분할하고,(2) 분할된 웨이퍼의 웨이퍼 편A을 600~900℃의 온도범위에서 선택된 온도 T1[℃]에서 유지한 열처리로내에 삽입하고,(3) T1[℃]에서 승온속도 t[℃/min]로 1000℃이상의 온도T2[℃]까지 승온하고, 웨이퍼편A 중 산소석출물이 검출가능한 사이즈로 성장할때까지 유지하고(단, t≤3℃/min].(4) 웨이퍼편A를 열처리로에서 꺼내어 웨이퍼내의 산소석출물 밀도를 측정하고,(5) 분할된 웨이퍼의 다른 웨이퍼편B를 800~1100℃의 온도범위에서 선택한 온도T3[℃]에서 유지한 열처리로 내에 삽입하고(단, T1<T3<T2로 함).(6) T3[℃]에서 상기 승온속도t[℃/min]로 상기 T2[℃]까지 승온하여 웨이퍼 중의 산소석출물이 검출가능한 사이즈로 성장할 때 까지 유지하고,(7) 웨이퍼편B를 열처리로에서 꺼내어, 웨이퍼내부의 산소석출물 밀도를 측정함.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-1999-00322242 | 1999-11-12 | ||
JP32224299A JP3787472B2 (ja) | 1999-11-12 | 1999-11-12 | シリコンウエーハおよびその製造方法ならびにシリコンウエーハの評価方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020017008659A Division KR100747726B1 (ko) | 1999-11-12 | 2000-11-07 | 실리콘 웨이퍼와 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060134228A KR20060134228A (ko) | 2006-12-27 |
KR100774607B1 true KR100774607B1 (ko) | 2007-11-09 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067025568A KR100774607B1 (ko) | 1999-11-12 | 2000-11-07 | 실리콘웨이퍼의 평가방법 |
KR1020017008659A KR100747726B1 (ko) | 1999-11-12 | 2000-11-07 | 실리콘 웨이퍼와 그 제조방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020017008659A KR100747726B1 (ko) | 1999-11-12 | 2000-11-07 | 실리콘 웨이퍼와 그 제조방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6544490B1 (ko) |
EP (1) | EP1170404B1 (ko) |
JP (1) | JP3787472B2 (ko) |
KR (2) | KR100774607B1 (ko) |
DE (1) | DE60044777D1 (ko) |
TW (1) | TWI222469B (ko) |
WO (1) | WO2001036718A1 (ko) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3994665B2 (ja) * | 2000-12-28 | 2007-10-24 | 信越半導体株式会社 | シリコン単結晶ウエーハおよびシリコン単結晶の製造方法 |
JP4646440B2 (ja) * | 2001-05-28 | 2011-03-09 | 信越半導体株式会社 | 窒素ドープアニールウエーハの製造方法 |
JPWO2003003441A1 (ja) * | 2001-06-28 | 2004-10-21 | 信越半導体株式会社 | アニールウェーハの製造方法及びアニールウェーハ |
JP4092946B2 (ja) * | 2002-05-09 | 2008-05-28 | 信越半導体株式会社 | シリコン単結晶ウエーハ及びエピタキシャルウエーハ並びにシリコン単結晶の製造方法 |
WO2004083496A1 (ja) * | 2003-02-25 | 2004-09-30 | Sumitomo Mitsubishi Silicon Corporation | シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法 |
US7014704B2 (en) * | 2003-06-06 | 2006-03-21 | Sumitomo Mitsubishi Silicon Corporation | Method for growing silicon single crystal |
JP2006093645A (ja) * | 2004-08-24 | 2006-04-06 | Toshiba Ceramics Co Ltd | シリコンウェーハの製造方法 |
JP5121139B2 (ja) * | 2005-12-27 | 2013-01-16 | ジルトロニック アクチエンゲゼルシャフト | アニールウエハの製造方法 |
DE102008046617B4 (de) * | 2008-09-10 | 2016-02-04 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung |
JP5440564B2 (ja) * | 2011-07-14 | 2014-03-12 | 信越半導体株式会社 | 結晶欠陥の検出方法 |
JP6266653B2 (ja) * | 2013-01-08 | 2018-01-24 | エスケー シルトロン カンパニー リミテッド | シリコン単結晶ウェハ |
JP6119680B2 (ja) | 2014-06-25 | 2017-04-26 | 信越半導体株式会社 | 半導体基板の欠陥領域の評価方法 |
JP6100226B2 (ja) * | 2014-11-26 | 2017-03-22 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱処理方法 |
KR101759876B1 (ko) * | 2015-07-01 | 2017-07-31 | 주식회사 엘지실트론 | 웨이퍼 및 웨이퍼 결함 분석 방법 |
KR101721211B1 (ko) | 2016-03-31 | 2017-03-29 | 주식회사 엘지실트론 | 단결정 실리콘 웨이퍼 분석 방법 및 이 방법에 의해 제조된 웨이퍼 |
CN107068676B (zh) * | 2017-03-13 | 2019-08-27 | Oppo广东移动通信有限公司 | 一种预设规格芯片、制造方法及移动终端 |
JP6927150B2 (ja) | 2018-05-29 | 2021-08-25 | 信越半導体株式会社 | シリコン単結晶の製造方法 |
CN110389108A (zh) * | 2019-08-16 | 2019-10-29 | 西安奕斯伟硅片技术有限公司 | 一种单晶硅缺陷区域的检测方法及装置 |
JP2021130577A (ja) * | 2020-02-19 | 2021-09-09 | グローバルウェーハズ・ジャパン株式会社 | 半導体シリコンウェーハの製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11199387A (ja) * | 1998-01-19 | 1999-07-27 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法およびシリコン単結晶ウエーハ |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0890662A (ja) * | 1994-09-27 | 1996-04-09 | Niigata Polymer Kk | 成形品の冷却搬送装置 |
JP3085146B2 (ja) | 1995-05-31 | 2000-09-04 | 住友金属工業株式会社 | シリコン単結晶ウェーハおよびその製造方法 |
JP2701806B2 (ja) * | 1995-08-21 | 1998-01-21 | 日本電気株式会社 | ファイル同期方式 |
JPH1179889A (ja) * | 1997-07-09 | 1999-03-23 | Shin Etsu Handotai Co Ltd | 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ |
JP3747123B2 (ja) * | 1997-11-21 | 2006-02-22 | 信越半導体株式会社 | 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ |
TW589415B (en) * | 1998-03-09 | 2004-06-01 | Shinetsu Handotai Kk | Method for producing silicon single crystal wafer and silicon single crystal wafer |
JPH11314997A (ja) * | 1998-05-01 | 1999-11-16 | Shin Etsu Handotai Co Ltd | 半導体シリコン単結晶ウェーハの製造方法 |
DE19823962A1 (de) * | 1998-05-28 | 1999-12-02 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung eines Einkristalls |
US6077343A (en) * | 1998-06-04 | 2000-06-20 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it |
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1999
- 1999-11-12 JP JP32224299A patent/JP3787472B2/ja not_active Expired - Fee Related
-
2000
- 2000-11-07 DE DE60044777T patent/DE60044777D1/de not_active Expired - Lifetime
- 2000-11-07 KR KR1020067025568A patent/KR100774607B1/ko active IP Right Grant
- 2000-11-07 WO PCT/JP2000/007808 patent/WO2001036718A1/ja active Application Filing
- 2000-11-07 US US09/869,932 patent/US6544490B1/en not_active Expired - Lifetime
- 2000-11-07 KR KR1020017008659A patent/KR100747726B1/ko active IP Right Grant
- 2000-11-07 EP EP00971820A patent/EP1170404B1/en not_active Expired - Lifetime
- 2000-11-10 TW TW089123883A patent/TWI222469B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11199387A (ja) * | 1998-01-19 | 1999-07-27 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法およびシリコン単結晶ウエーハ |
Also Published As
Publication number | Publication date |
---|---|
EP1170404B1 (en) | 2010-08-04 |
EP1170404A1 (en) | 2002-01-09 |
KR20060134228A (ko) | 2006-12-27 |
JP2001139396A (ja) | 2001-05-22 |
JP3787472B2 (ja) | 2006-06-21 |
US6544490B1 (en) | 2003-04-08 |
WO2001036718A1 (fr) | 2001-05-25 |
EP1170404A4 (en) | 2003-06-11 |
KR20010102971A (ko) | 2001-11-17 |
DE60044777D1 (de) | 2010-09-16 |
KR100747726B1 (ko) | 2007-08-08 |
TWI222469B (en) | 2004-10-21 |
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