DE60002173D1 - Verfaren und reaktor zur züchtung von silizium-karbid einkristallung durch chemische dampfabscheidung - Google Patents

Verfaren und reaktor zur züchtung von silizium-karbid einkristallung durch chemische dampfabscheidung

Info

Publication number
DE60002173D1
DE60002173D1 DE60002173T DE60002173T DE60002173D1 DE 60002173 D1 DE60002173 D1 DE 60002173D1 DE 60002173 T DE60002173 T DE 60002173T DE 60002173 T DE60002173 T DE 60002173T DE 60002173 D1 DE60002173 D1 DE 60002173D1
Authority
DE
Germany
Prior art keywords
reactor
vapor deposition
silicon carbide
chemical vapor
growing silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60002173T
Other languages
English (en)
Other versions
DE60002173T2 (de
Inventor
Jury Nikolaevich Makarov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE60002173D1 publication Critical patent/DE60002173D1/de
Publication of DE60002173T2 publication Critical patent/DE60002173T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
DE60002173T 1999-01-21 2000-01-18 Verfaren und reaktor zur züchtung von silizium-karbid einkristallung durch chemische dampfabscheidung Expired - Fee Related DE60002173T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
RU99101816 1999-01-21
RU99101816/12A RU2162117C2 (ru) 1999-01-21 1999-01-21 Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
PCT/RU2000/000016 WO2000043577A1 (en) 1999-01-21 2000-01-18 Cdv method of and reactor for silicon carbide monocrystal growth

Publications (2)

Publication Number Publication Date
DE60002173D1 true DE60002173D1 (de) 2003-05-22
DE60002173T2 DE60002173T2 (de) 2004-03-04

Family

ID=20215296

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60002173T Expired - Fee Related DE60002173T2 (de) 1999-01-21 2000-01-18 Verfaren und reaktor zur züchtung von silizium-karbid einkristallung durch chemische dampfabscheidung

Country Status (5)

Country Link
EP (1) EP1151155B1 (de)
AT (1) ATE237703T1 (de)
DE (1) DE60002173T2 (de)
RU (1) RU2162117C2 (de)
WO (1) WO2000043577A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6824611B1 (en) * 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
JP3864696B2 (ja) * 2000-11-10 2007-01-10 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
JP3959952B2 (ja) 2000-11-10 2007-08-15 株式会社デンソー 炭化珪素単結晶の製造方法及び製造装置
US7147713B2 (en) 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
US7247513B2 (en) 2003-05-08 2007-07-24 Caracal, Inc. Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
ITMI20031196A1 (it) * 2003-06-13 2004-12-14 Lpe Spa Sistema per crescere cristalli di carburo di silicio
ITMI20041677A1 (it) * 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
DE102004062553A1 (de) 2004-12-24 2006-07-06 Aixtron Ag CVD-Reaktor mit RF-geheizter Prozesskammer
ITMI20062213A1 (it) * 2006-11-20 2008-05-21 Lpe Spa Reattore per crescere cristalli
AU2009255307A1 (en) * 2008-06-04 2009-12-10 Dow Corning Corporation Method of reducing memory effects in semiconductor epitaxy
RU2456373C1 (ru) * 2011-04-05 2012-07-20 Федеральное государственное образовательное учреждение высшего профессионального образования "Тверская государственная сельскохозяйственная академия" (ФГОУ ВПО "Тверская государственная сельскохозяйственная академия") Устройство для нанесения металлических покрытий на внутренние поверхности подшипников скольжения cvd-методом металлоорганических соединений
RU2499324C2 (ru) * 2011-10-07 2013-11-20 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Северо-Кавказский федеральный университет" ГЕТЕРОСТРУКТУРЫ SiC/Si И Diamond/SiC/Si, А ТАКЖЕ СПОСОБЫ ИХ СИНТЕЗА
WO2013055967A1 (en) * 2011-10-12 2013-04-18 Integrated Photovoltaic, Inc. Photovoltaic substrate
SE536605C2 (sv) 2012-01-30 2014-03-25 Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi
RU2522812C1 (ru) * 2013-02-18 2014-07-20 Общество с ограниченной ответственностью "Новые Кремневые Технологии" Способ изготовления изделий, содержащих кремниевую подложку с пленкой из карбида кремния на ее поверхности и реактор для осуществления способа
RU2558812C1 (ru) * 2014-04-17 2015-08-10 Федеральное Государственное Автономное Образовательное Учреждение Высшего Профессионального Образования "Сибирский Федеральный Университет" Способ получения покрытия из карбида кремния на кварцевом изделии
RU2691772C1 (ru) * 2018-03-06 2019-06-18 Публичное Акционерное Общество "Электровыпрямитель" Способ роста эпитаксиальной структуры монокристаллического карбида кремния с малой плотностью эпитаксиальных дефектов

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置
SE9502288D0 (sv) * 1995-06-26 1995-06-26 Abb Research Ltd A device and a method for epitaxially growing objects by CVD
JP3384242B2 (ja) * 1996-03-29 2003-03-10 株式会社豊田中央研究所 炭化珪素単結晶の製造方法
SE9603586D0 (sv) * 1996-10-01 1996-10-01 Abb Research Ltd A device for epitaxially growing objects and method for such a growth

Also Published As

Publication number Publication date
DE60002173T2 (de) 2004-03-04
EP1151155A1 (de) 2001-11-07
ATE237703T1 (de) 2003-05-15
EP1151155B1 (de) 2003-04-16
RU2162117C2 (ru) 2001-01-20
WO2000043577A1 (en) 2000-07-27

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee