ITMI20062213A1 - Reattore per crescere cristalli - Google Patents

Reattore per crescere cristalli

Info

Publication number
ITMI20062213A1
ITMI20062213A1 IT002213A ITMI20062213A ITMI20062213A1 IT MI20062213 A1 ITMI20062213 A1 IT MI20062213A1 IT 002213 A IT002213 A IT 002213A IT MI20062213 A ITMI20062213 A IT MI20062213A IT MI20062213 A1 ITMI20062213 A1 IT MI20062213A1
Authority
IT
Italy
Prior art keywords
reactor
grow crystals
crystals
grow
Prior art date
Application number
IT002213A
Other languages
English (en)
Inventor
Danilo Crippa
Angelis Sonia De
Claudio Pelosi
Vittorio Pozzetti
Franco Preti
Natale Speciale
Gianluca Valente
Original Assignee
Lpe Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lpe Spa filed Critical Lpe Spa
Priority to IT002213A priority Critical patent/ITMI20062213A1/it
Priority to US12/515,516 priority patent/US20100031885A1/en
Priority to CNA2007800430703A priority patent/CN101553606A/zh
Priority to EP07848873A priority patent/EP2122017A1/en
Priority to PCT/IB2007/003434 priority patent/WO2008062269A1/en
Priority to JP2009536811A priority patent/JP2010510154A/ja
Publication of ITMI20062213A1 publication Critical patent/ITMI20062213A1/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
IT002213A 2006-11-20 2006-11-20 Reattore per crescere cristalli ITMI20062213A1 (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT002213A ITMI20062213A1 (it) 2006-11-20 2006-11-20 Reattore per crescere cristalli
US12/515,516 US20100031885A1 (en) 2006-11-20 2007-11-11 Reactor For Growing Crystals
CNA2007800430703A CN101553606A (zh) 2006-11-20 2007-11-11 晶体生长用反应器
EP07848873A EP2122017A1 (en) 2006-11-20 2007-11-11 Reactor for growing crystals
PCT/IB2007/003434 WO2008062269A1 (en) 2006-11-20 2007-11-11 Reactor for growing crystals
JP2009536811A JP2010510154A (ja) 2006-11-20 2007-11-11 結晶成長用反応炉

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT002213A ITMI20062213A1 (it) 2006-11-20 2006-11-20 Reattore per crescere cristalli

Publications (1)

Publication Number Publication Date
ITMI20062213A1 true ITMI20062213A1 (it) 2008-05-21

Family

ID=39184688

Family Applications (1)

Application Number Title Priority Date Filing Date
IT002213A ITMI20062213A1 (it) 2006-11-20 2006-11-20 Reattore per crescere cristalli

Country Status (6)

Country Link
US (1) US20100031885A1 (it)
EP (1) EP2122017A1 (it)
JP (1) JP2010510154A (it)
CN (1) CN101553606A (it)
IT (1) ITMI20062213A1 (it)
WO (1) WO2008062269A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6187372B2 (ja) * 2014-04-11 2017-08-30 株式会社デンソー 炭化珪素単結晶製造装置
CN105734671B (zh) * 2014-12-10 2018-11-30 北京天科合达半导体股份有限公司 一种高质量碳化硅晶体生长的方法
US11359307B2 (en) * 2016-04-28 2022-06-14 Kwansei Gakuin Educational Foundation Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE9503428D0 (sv) * 1995-10-04 1995-10-04 Abb Research Ltd A method for epitaxially growing objects and a device for such a growth
US6039812A (en) * 1996-10-21 2000-03-21 Abb Research Ltd. Device for epitaxially growing objects and method for such a growth
RU2162117C2 (ru) * 1999-01-21 2001-01-20 Макаров Юрий Николаевич Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
US6824611B1 (en) * 1999-10-08 2004-11-30 Cree, Inc. Method and apparatus for growing silicon carbide crystals
FR2839730B1 (fr) * 2002-05-15 2004-08-27 Centre Nat Rech Scient Formation de carbure de silicium monocristallin
US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
US7052546B1 (en) * 2003-08-28 2006-05-30 Cape Simulations, Inc. High-purity crystal growth

Also Published As

Publication number Publication date
US20100031885A1 (en) 2010-02-11
CN101553606A (zh) 2009-10-07
JP2010510154A (ja) 2010-04-02
WO2008062269A1 (en) 2008-05-29
EP2122017A1 (en) 2009-11-25

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