DE60000725T2 - Mitteltemperatur-cvd-verfahren - Google Patents
Mitteltemperatur-cvd-verfahrenInfo
- Publication number
- DE60000725T2 DE60000725T2 DE60000725T DE60000725T DE60000725T2 DE 60000725 T2 DE60000725 T2 DE 60000725T2 DE 60000725 T DE60000725 T DE 60000725T DE 60000725 T DE60000725 T DE 60000725T DE 60000725 T2 DE60000725 T2 DE 60000725T2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- group
- cermets
- ceramics
- range
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 111
- 239000007789 gas Substances 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims abstract description 115
- 238000000576 coating method Methods 0.000 claims abstract description 104
- 238000006243 chemical reaction Methods 0.000 claims abstract description 99
- 239000011248 coating agent Substances 0.000 claims abstract description 92
- 239000000203 mixture Substances 0.000 claims abstract description 31
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000956 alloy Substances 0.000 claims abstract description 12
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 12
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 12
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 12
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 11
- 229910000039 hydrogen halide Inorganic materials 0.000 claims abstract description 11
- 239000012433 hydrogen halide Substances 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 10
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 114
- 230000008021 deposition Effects 0.000 claims description 107
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 29
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 27
- 239000000919 ceramic Substances 0.000 claims description 24
- 238000005229 chemical vapour deposition Methods 0.000 claims description 19
- 150000001247 metal acetylides Chemical class 0.000 claims description 18
- 229910000997 High-speed steel Inorganic materials 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 15
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 4
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 4
- 150000001649 bromium compounds Chemical class 0.000 claims description 3
- 150000002222 fluorine compounds Chemical class 0.000 claims description 3
- 150000004694 iodide salts Chemical class 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910003074 TiCl4 Inorganic materials 0.000 claims 8
- 150000001805 chlorine compounds Chemical class 0.000 claims 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 238000005137 deposition process Methods 0.000 abstract 2
- 238000012360 testing method Methods 0.000 description 78
- 239000010410 layer Substances 0.000 description 45
- 238000005259 measurement Methods 0.000 description 13
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000010955 niobium Substances 0.000 description 8
- 239000011247 coating layer Substances 0.000 description 7
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 6
- 239000001569 carbon dioxide Substances 0.000 description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000007792 addition Methods 0.000 description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 5
- -1 metal halide compound Chemical class 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 4
- 229910001507 metal halide Inorganic materials 0.000 description 4
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000009675 coating thickness measurement Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical group Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000816 inconels 718 Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T407/00—Cutters, for shaping
- Y10T407/27—Cutters, for shaping comprising tool of specific chemical composition
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Glass Compositions (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/261,001 US6146697A (en) | 1999-03-02 | 1999-03-02 | MT CVD process |
| PCT/US2000/004682 WO2000052224A1 (en) | 1999-03-02 | 2000-02-24 | Mt cvd process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60000725D1 DE60000725D1 (de) | 2002-12-12 |
| DE60000725T2 true DE60000725T2 (de) | 2003-08-21 |
Family
ID=22991551
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1157143T Pending DE1157143T1 (de) | 1999-03-02 | 2000-02-24 | Mitteltemperatur-cvd-verfahren |
| DE60000725T Expired - Lifetime DE60000725T2 (de) | 1999-03-02 | 2000-02-24 | Mitteltemperatur-cvd-verfahren |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1157143T Pending DE1157143T1 (de) | 1999-03-02 | 2000-02-24 | Mitteltemperatur-cvd-verfahren |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6146697A (enExample) |
| EP (1) | EP1157143B1 (enExample) |
| JP (2) | JP4728486B2 (enExample) |
| KR (1) | KR100661977B1 (enExample) |
| CN (1) | CN1342216A (enExample) |
| AT (1) | ATE227358T1 (enExample) |
| CA (1) | CA2360713A1 (enExample) |
| DE (2) | DE1157143T1 (enExample) |
| ES (1) | ES2184704T3 (enExample) |
| IL (1) | IL144500A0 (enExample) |
| WO (1) | WO2000052224A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6146697A (en) * | 1999-03-02 | 2000-11-14 | Kennametal Inc. | MT CVD process |
| US6352014B1 (en) * | 1999-12-15 | 2002-03-05 | International Business Machines Corporation | Method for making punches using multi-layer ceramic technology |
| US6533910B2 (en) * | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
| JP2002289616A (ja) * | 2001-03-28 | 2002-10-04 | Mitsubishi Heavy Ind Ltd | 成膜方法及び成膜装置 |
| DE10122329B4 (de) * | 2001-05-08 | 2004-06-03 | Tinox Gmbh | Wärmetauscher-Vorrichtung mit einer oberflächenbeschichteten Wand, die Medium 1 von Medium 2 trennt |
| KR20030052468A (ko) * | 2001-12-21 | 2003-06-27 | 한국야금 주식회사 | 내마모성 공구용 박막 및 이를 이용하는 피복부재 |
| AT503050B1 (de) * | 2005-11-17 | 2007-09-15 | Boehlerit Gmbh & Co Kg | Metallcarbonitridschicht |
| PL1948842T3 (pl) * | 2005-11-17 | 2011-12-30 | Boehlerit Gmbh & Co Kg | Warstwa węgloazotku tytanu i sposób wytwarzania warstwy węgloazotku tytanu |
| KR100791112B1 (ko) * | 2005-12-23 | 2008-01-04 | 한국야금 주식회사 | 절삭공구용 고경도 ｃｖｄ 다원소 복합막 |
| JP4753249B2 (ja) * | 2006-01-13 | 2011-08-24 | 株式会社神戸製鋼所 | ガラス成形用金型 |
| EP1897970B2 (en) * | 2006-09-05 | 2016-06-15 | Tungaloy Corporation | Coated cutting tool and method for producing the same |
| US8734070B2 (en) | 2010-10-20 | 2014-05-27 | Kennametal Inc. | Toolholder with externally-mounted dynamic absorber |
| US8524360B2 (en) | 2011-08-29 | 2013-09-03 | Kennametal Inc. | Cutting insert with a titanium oxycarbonitride coating and method for making the same |
| JP6022228B2 (ja) | 2011-09-14 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| AT13091U1 (de) * | 2012-02-27 | 2013-06-15 | Ceratizit Austria Gmbh | Verfahren zur Herstellung einer Hartstoffschicht auf einem Substrat, Hartstoffschicht sowie Zerspanwerkzeug |
| KR101456685B1 (ko) | 2013-03-08 | 2014-11-12 | 부산대학교 산학협력단 | 금속 부품의 고경도 표면코팅 방법 |
| US11939670B2 (en) | 2018-09-28 | 2024-03-26 | Corning Incorporated | Low temperature methods for depositing inorganic particles on a metal substrate and articles produced by the same |
| US11464102B2 (en) * | 2018-10-06 | 2022-10-04 | Fermi Research Alliance, Llc | Methods and systems for treatment of superconducting materials to improve low field performance |
| JP7511584B2 (ja) * | 2019-05-27 | 2024-07-05 | エービー サンドビック コロマント | 被覆切削工具 |
| JP7425990B2 (ja) * | 2020-03-19 | 2024-02-01 | 三菱マテリアル株式会社 | 表面被覆切削工具の製造方法 |
| CN116162918B (zh) * | 2023-04-26 | 2023-07-14 | 赣州澳克泰工具技术有限公司 | 一种高硬度高韧性的刀具涂层及制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3846162A (en) * | 1968-10-21 | 1974-11-05 | Texas Instruments Inc | Metal carbonitride coatings |
| US4196233A (en) * | 1974-02-07 | 1980-04-01 | Ciba-Geigy Corporation | Process for coating inorganic substrates with carbides, nitrides and/or carbonitrides |
| US5436071A (en) * | 1990-01-31 | 1995-07-25 | Mitsubishi Materials Corporation | Cermet cutting tool and process for producing the same |
| JP3109272B2 (ja) * | 1992-08-04 | 2000-11-13 | 三菱マテリアル株式会社 | 耐欠損性および耐摩耗性にすぐれた表面被覆炭窒化チタン基サーメット製切削工具 |
| JP2585470B2 (ja) * | 1991-01-14 | 1997-02-26 | 日本碍子株式会社 | ハニカム構造体押出用口金の製造方法 |
| DE4239234A1 (de) * | 1992-11-21 | 1994-06-09 | Krupp Widia Gmbh | Werkzeug und Verfahren zur Beschichtung eines Werkzeuggrundkörpers |
| US5681651A (en) * | 1992-11-27 | 1997-10-28 | Mitsubishi Materials Corporation | Multilayer coated hard alloy cutting tool |
| SE514737C2 (sv) * | 1994-03-22 | 2001-04-09 | Sandvik Ab | Belagt skärverktyg av hårdmetall |
| US5652045A (en) * | 1994-10-20 | 1997-07-29 | Mitsubishi Materials Corporation | Coated tungsten carbide-based cemented carbide blade member |
| US5786069A (en) * | 1995-09-01 | 1998-07-28 | Sandvik Ab | Coated turning insert |
| JPH09310179A (ja) * | 1996-05-20 | 1997-12-02 | Mitsubishi Materials Corp | 減圧式縦型化学蒸着装置および化学蒸着方法 |
| SE510778C2 (sv) * | 1996-07-11 | 1999-06-21 | Sandvik Ab | Belagt skär för finfräsning av grått gjutjärn |
| US6146697A (en) * | 1999-03-02 | 2000-11-14 | Kennametal Inc. | MT CVD process |
-
1999
- 1999-03-02 US US09/261,001 patent/US6146697A/en not_active Expired - Lifetime
-
2000
- 2000-02-24 DE DE1157143T patent/DE1157143T1/de active Pending
- 2000-02-24 AT AT00913591T patent/ATE227358T1/de not_active IP Right Cessation
- 2000-02-24 DE DE60000725T patent/DE60000725T2/de not_active Expired - Lifetime
- 2000-02-24 CA CA002360713A patent/CA2360713A1/en not_active Abandoned
- 2000-02-24 EP EP00913591A patent/EP1157143B1/en not_active Revoked
- 2000-02-24 WO PCT/US2000/004682 patent/WO2000052224A1/en not_active Ceased
- 2000-02-24 KR KR1020017011047A patent/KR100661977B1/ko not_active Expired - Fee Related
- 2000-02-24 CN CN00804441A patent/CN1342216A/zh active Pending
- 2000-02-24 JP JP2000602831A patent/JP4728486B2/ja not_active Expired - Fee Related
- 2000-02-24 ES ES00913591T patent/ES2184704T3/es not_active Expired - Lifetime
- 2000-02-24 IL IL14450000A patent/IL144500A0/xx unknown
-
2011
- 2011-02-10 JP JP2011026981A patent/JP2011137238A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR100661977B1 (ko) | 2006-12-27 |
| KR20010105364A (ko) | 2001-11-28 |
| IL144500A0 (en) | 2002-05-23 |
| CN1342216A (zh) | 2002-03-27 |
| ATE227358T1 (de) | 2002-11-15 |
| CA2360713A1 (en) | 2000-09-08 |
| DE1157143T1 (de) | 2002-07-04 |
| ES2184704T3 (es) | 2003-04-16 |
| JP4728486B2 (ja) | 2011-07-20 |
| US6146697A (en) | 2000-11-14 |
| JP2011137238A (ja) | 2011-07-14 |
| EP1157143A1 (en) | 2001-11-28 |
| WO2000052224A1 (en) | 2000-09-08 |
| EP1157143B1 (en) | 2002-11-06 |
| DE60000725D1 (de) | 2002-12-12 |
| JP2002538308A (ja) | 2002-11-12 |
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