ES2184704T3 - Proceso cvd de media temperatura. - Google Patents
Proceso cvd de media temperatura.Info
- Publication number
- ES2184704T3 ES2184704T3 ES00913591T ES00913591T ES2184704T3 ES 2184704 T3 ES2184704 T3 ES 2184704T3 ES 00913591 T ES00913591 T ES 00913591T ES 00913591 T ES00913591 T ES 00913591T ES 2184704 T3 ES2184704 T3 ES 2184704T3
- Authority
- ES
- Spain
- Prior art keywords
- carbonitride
- reaction chamber
- coating
- substrates
- cvd process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T407/00—Cutters, for shaping
- Y10T407/27—Cutters, for shaping comprising tool of specific chemical composition
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Glass Compositions (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Physical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Abstract
Proceso CVD MT que comprende los pasos consistentes en: a) calentar al menos un sustrato en una cámara de reacción a una temperatura de reacción, teniendo el o los sustratos una superficie; y b) introducir dentro de dicha cámara de reacción un gas de proceso de deposición que comprende de 1 a 30 % de halogenuro de hidrógeno y cantidades predeterminadas de una fuente de carbono/nitrógeno, un compuesto de metal-halógeno, y H2 de forma que se deposite un revestimiento conteniendo carbonitruro sobre dicha superficie del o de los sustratos.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/261,001 US6146697A (en) | 1999-03-02 | 1999-03-02 | MT CVD process |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2184704T3 true ES2184704T3 (es) | 2003-04-16 |
Family
ID=22991551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES00913591T Expired - Lifetime ES2184704T3 (es) | 1999-03-02 | 2000-02-24 | Proceso cvd de media temperatura. |
Country Status (11)
Country | Link |
---|---|
US (1) | US6146697A (es) |
EP (1) | EP1157143B1 (es) |
JP (2) | JP4728486B2 (es) |
KR (1) | KR100661977B1 (es) |
CN (1) | CN1342216A (es) |
AT (1) | ATE227358T1 (es) |
CA (1) | CA2360713A1 (es) |
DE (2) | DE1157143T1 (es) |
ES (1) | ES2184704T3 (es) |
IL (1) | IL144500A0 (es) |
WO (1) | WO2000052224A1 (es) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6146697A (en) * | 1999-03-02 | 2000-11-14 | Kennametal Inc. | MT CVD process |
US6352014B1 (en) * | 1999-12-15 | 2002-03-05 | International Business Machines Corporation | Method for making punches using multi-layer ceramic technology |
US6533910B2 (en) * | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
JP2002289616A (ja) * | 2001-03-28 | 2002-10-04 | Mitsubishi Heavy Ind Ltd | 成膜方法及び成膜装置 |
DE10122329B4 (de) * | 2001-05-08 | 2004-06-03 | Tinox Gmbh | Wärmetauscher-Vorrichtung mit einer oberflächenbeschichteten Wand, die Medium 1 von Medium 2 trennt |
KR20030052468A (ko) * | 2001-12-21 | 2003-06-27 | 한국야금 주식회사 | 내마모성 공구용 박막 및 이를 이용하는 피복부재 |
CA2640777A1 (en) * | 2005-11-17 | 2007-05-24 | Boehlerit Gmbh & Co. Kg. | Metal carbonitride layer and method for the production of a metal carbonitride layer |
AT503050B1 (de) * | 2005-11-17 | 2007-09-15 | Boehlerit Gmbh & Co Kg | Metallcarbonitridschicht |
KR100791112B1 (ko) * | 2005-12-23 | 2008-01-04 | 한국야금 주식회사 | 절삭공구용 고경도 cvd 다원소 복합막 |
JP4753249B2 (ja) * | 2006-01-13 | 2011-08-24 | 株式会社神戸製鋼所 | ガラス成形用金型 |
US7906230B2 (en) * | 2006-09-05 | 2011-03-15 | Tungaloy Corporation | Coated cutting tool and method for producing the same |
US8734070B2 (en) | 2010-10-20 | 2014-05-27 | Kennametal Inc. | Toolholder with externally-mounted dynamic absorber |
US8524360B2 (en) | 2011-08-29 | 2013-09-03 | Kennametal Inc. | Cutting insert with a titanium oxycarbonitride coating and method for making the same |
JP6022228B2 (ja) | 2011-09-14 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
AT13091U1 (de) | 2012-02-27 | 2013-06-15 | Ceratizit Austria Gmbh | Verfahren zur Herstellung einer Hartstoffschicht auf einem Substrat, Hartstoffschicht sowie Zerspanwerkzeug |
KR101456685B1 (ko) | 2013-03-08 | 2014-11-12 | 부산대학교 산학협력단 | 금속 부품의 고경도 표면코팅 방법 |
US11939670B2 (en) | 2018-09-28 | 2024-03-26 | Corning Incorporated | Low temperature methods for depositing inorganic particles on a metal substrate and articles produced by the same |
US11464102B2 (en) * | 2018-10-06 | 2022-10-04 | Fermi Research Alliance, Llc | Methods and systems for treatment of superconducting materials to improve low field performance |
US20220205109A1 (en) * | 2019-05-27 | 2022-06-30 | Ab Sandvik Coromant | Coated cutting tool |
JP7425990B2 (ja) * | 2020-03-19 | 2024-02-01 | 三菱マテリアル株式会社 | 表面被覆切削工具の製造方法 |
CN116162918B (zh) * | 2023-04-26 | 2023-07-14 | 赣州澳克泰工具技术有限公司 | 一种高硬度高韧性的刀具涂层及制备方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3846162A (en) * | 1968-10-21 | 1974-11-05 | Texas Instruments Inc | Metal carbonitride coatings |
US4196233A (en) * | 1974-02-07 | 1980-04-01 | Ciba-Geigy Corporation | Process for coating inorganic substrates with carbides, nitrides and/or carbonitrides |
JP3109272B2 (ja) * | 1992-08-04 | 2000-11-13 | 三菱マテリアル株式会社 | 耐欠損性および耐摩耗性にすぐれた表面被覆炭窒化チタン基サーメット製切削工具 |
US5436071A (en) * | 1990-01-31 | 1995-07-25 | Mitsubishi Materials Corporation | Cermet cutting tool and process for producing the same |
JP2585470B2 (ja) * | 1991-01-14 | 1997-02-26 | 日本碍子株式会社 | ハニカム構造体押出用口金の製造方法 |
DE4239234A1 (de) * | 1992-11-21 | 1994-06-09 | Krupp Widia Gmbh | Werkzeug und Verfahren zur Beschichtung eines Werkzeuggrundkörpers |
US5681651A (en) * | 1992-11-27 | 1997-10-28 | Mitsubishi Materials Corporation | Multilayer coated hard alloy cutting tool |
SE514737C2 (sv) * | 1994-03-22 | 2001-04-09 | Sandvik Ab | Belagt skärverktyg av hårdmetall |
US5652045A (en) * | 1994-10-20 | 1997-07-29 | Mitsubishi Materials Corporation | Coated tungsten carbide-based cemented carbide blade member |
US5786069A (en) * | 1995-09-01 | 1998-07-28 | Sandvik Ab | Coated turning insert |
JPH09310179A (ja) * | 1996-05-20 | 1997-12-02 | Mitsubishi Materials Corp | 減圧式縦型化学蒸着装置および化学蒸着方法 |
SE510778C2 (sv) * | 1996-07-11 | 1999-06-21 | Sandvik Ab | Belagt skär för finfräsning av grått gjutjärn |
US6146697A (en) * | 1999-03-02 | 2000-11-14 | Kennametal Inc. | MT CVD process |
-
1999
- 1999-03-02 US US09/261,001 patent/US6146697A/en not_active Expired - Lifetime
-
2000
- 2000-02-24 KR KR1020017011047A patent/KR100661977B1/ko not_active IP Right Cessation
- 2000-02-24 EP EP00913591A patent/EP1157143B1/en not_active Revoked
- 2000-02-24 JP JP2000602831A patent/JP4728486B2/ja not_active Expired - Fee Related
- 2000-02-24 IL IL14450000A patent/IL144500A0/xx unknown
- 2000-02-24 ES ES00913591T patent/ES2184704T3/es not_active Expired - Lifetime
- 2000-02-24 WO PCT/US2000/004682 patent/WO2000052224A1/en active IP Right Grant
- 2000-02-24 CN CN00804441A patent/CN1342216A/zh active Pending
- 2000-02-24 CA CA002360713A patent/CA2360713A1/en not_active Abandoned
- 2000-02-24 DE DE1157143T patent/DE1157143T1/de active Pending
- 2000-02-24 DE DE60000725T patent/DE60000725T2/de not_active Expired - Lifetime
- 2000-02-24 AT AT00913591T patent/ATE227358T1/de not_active IP Right Cessation
-
2011
- 2011-02-10 JP JP2011026981A patent/JP2011137238A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2000052224A1 (en) | 2000-09-08 |
IL144500A0 (en) | 2002-05-23 |
CA2360713A1 (en) | 2000-09-08 |
JP2002538308A (ja) | 2002-11-12 |
US6146697A (en) | 2000-11-14 |
JP4728486B2 (ja) | 2011-07-20 |
DE60000725D1 (de) | 2002-12-12 |
CN1342216A (zh) | 2002-03-27 |
EP1157143B1 (en) | 2002-11-06 |
DE60000725T2 (de) | 2003-08-21 |
KR100661977B1 (ko) | 2006-12-27 |
EP1157143A1 (en) | 2001-11-28 |
DE1157143T1 (de) | 2002-07-04 |
KR20010105364A (ko) | 2001-11-28 |
JP2011137238A (ja) | 2011-07-14 |
ATE227358T1 (de) | 2002-11-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ES2184704T3 (es) | Proceso cvd de media temperatura. | |
US7070833B2 (en) | Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments | |
US7344755B2 (en) | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers | |
US3784402A (en) | Chemical vapor deposition coatings on titanium | |
WO2005060632A3 (en) | High-throughput ex-situ method for rare-earth-barium-copper-oxide (rebco) film growth | |
JP2002538308A5 (es) | ||
US10487402B2 (en) | Coated article | |
TW200618066A (en) | Deposition of ruthenium metal layers in a thermal chemical vapor deposition process | |
WO2004063421A3 (en) | Deposition chamber surface enhancement and resulting deposition chambers | |
TW200519222A (en) | Low-pressure deposition of metal layers from metal-carbonyl precursors | |
KR20020008395A (ko) | 화학 증착 시스템 및 방법 | |
IL93378A (en) | Deposition process of a coating of the ceramic type based on carbides, nitrides or carbonitrides on a metallic substrate and element comprising a coating obtained by this procedure | |
Kuo et al. | Plasma-enhanced chemical vapor deposition of silicon carbonitride using hexamethyldisilazane and nitrogen | |
JP2009544837A (ja) | 非酸化物セラミック被覆の蒸着方法 | |
EP3132068B1 (en) | Method for producing coated steel components | |
JPWO2005121398A1 (ja) | ダイヤモンド薄膜のコーティング法及びダイヤモンド被覆超硬合金部材 | |
KR20090025053A (ko) | 화학기상증착 챔버의 시즈닝 방법 | |
Izak et al. | Enhanced spontaneous nucleation of diamond nuclei in hot and cold microwave plasma systems | |
Abisset et al. | Gas and plasma nitriding pretreatments of steel substrates before CVD growth of hard refractory coatings | |
US5851314A (en) | Method for plasma carburization of metal workpieces | |
US20160024642A1 (en) | Preheat chamber oxidation process | |
JPH04301084A (ja) | 耐摩耗性部材およびその製造法 | |
Blum et al. | Wear-resistant amorphous SiC coatings produced by plasma-enhanced CVD | |
US20040175578A1 (en) | Method for chemical vapor deposition of silicon on to substrates for use in corrosive and vacuum environments | |
US20060003100A1 (en) | CVD process to deposit aluminum oxide coatings |