CA2360713A1 - Mt cvd process - Google Patents
Mt cvd process Download PDFInfo
- Publication number
- CA2360713A1 CA2360713A1 CA002360713A CA2360713A CA2360713A1 CA 2360713 A1 CA2360713 A1 CA 2360713A1 CA 002360713 A CA002360713 A CA 002360713A CA 2360713 A CA2360713 A CA 2360713A CA 2360713 A1 CA2360713 A1 CA 2360713A1
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- method described
- substrate coated
- process described
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 150
- 239000000758 substrate Substances 0.000 claims abstract description 172
- 239000007789 gas Substances 0.000 claims abstract description 146
- 238000000576 coating method Methods 0.000 claims abstract description 106
- 238000006243 chemical reaction Methods 0.000 claims abstract description 100
- 239000011248 coating agent Substances 0.000 claims abstract description 92
- 238000005137 deposition process Methods 0.000 claims abstract description 80
- 239000000203 mixture Substances 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000956 alloy Substances 0.000 claims abstract description 12
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 12
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 12
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 11
- 229910000039 hydrogen halide Inorganic materials 0.000 claims abstract description 11
- 239000012433 hydrogen halide Substances 0.000 claims abstract description 11
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 10
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 8
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 31
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 31
- 239000000919 ceramic Substances 0.000 claims description 25
- 150000001247 metal acetylides Chemical class 0.000 claims description 18
- 229910000997 High-speed steel Inorganic materials 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 16
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims description 5
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 claims description 5
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 claims description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 3
- 150000001649 bromium compounds Chemical class 0.000 claims description 3
- 150000004694 iodide salts Chemical class 0.000 claims description 3
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 3
- 229910003074 TiCl4 Inorganic materials 0.000 claims 8
- 150000001805 chlorine compounds Chemical class 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 85
- 238000012360 testing method Methods 0.000 description 80
- 239000010410 layer Substances 0.000 description 49
- 238000000151 deposition Methods 0.000 description 35
- 230000008021 deposition Effects 0.000 description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 14
- 238000005259 measurement Methods 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000010955 niobium Substances 0.000 description 8
- 238000007792 addition Methods 0.000 description 7
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011247 coating layer Substances 0.000 description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 238000009675 coating thickness measurement Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- -1 flouride Chemical group 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 3
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910007932 ZrCl4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000816 inconels 718 Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 210000002445 nipple Anatomy 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T407/00—Cutters, for shaping
- Y10T407/27—Cutters, for shaping comprising tool of specific chemical composition
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Glass Compositions (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/261,001 | 1999-03-02 | ||
| US09/261,001 US6146697A (en) | 1999-03-02 | 1999-03-02 | MT CVD process |
| PCT/US2000/004682 WO2000052224A1 (en) | 1999-03-02 | 2000-02-24 | Mt cvd process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2360713A1 true CA2360713A1 (en) | 2000-09-08 |
Family
ID=22991551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002360713A Abandoned CA2360713A1 (en) | 1999-03-02 | 2000-02-24 | Mt cvd process |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6146697A (enExample) |
| EP (1) | EP1157143B1 (enExample) |
| JP (2) | JP4728486B2 (enExample) |
| KR (1) | KR100661977B1 (enExample) |
| CN (1) | CN1342216A (enExample) |
| AT (1) | ATE227358T1 (enExample) |
| CA (1) | CA2360713A1 (enExample) |
| DE (2) | DE60000725T2 (enExample) |
| ES (1) | ES2184704T3 (enExample) |
| IL (1) | IL144500A0 (enExample) |
| WO (1) | WO2000052224A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6146697A (en) * | 1999-03-02 | 2000-11-14 | Kennametal Inc. | MT CVD process |
| US6352014B1 (en) * | 1999-12-15 | 2002-03-05 | International Business Machines Corporation | Method for making punches using multi-layer ceramic technology |
| US6533910B2 (en) * | 2000-12-29 | 2003-03-18 | Lam Research Corporation | Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof |
| JP2002289616A (ja) * | 2001-03-28 | 2002-10-04 | Mitsubishi Heavy Ind Ltd | 成膜方法及び成膜装置 |
| DE10122329B4 (de) * | 2001-05-08 | 2004-06-03 | Tinox Gmbh | Wärmetauscher-Vorrichtung mit einer oberflächenbeschichteten Wand, die Medium 1 von Medium 2 trennt |
| KR20030052468A (ko) * | 2001-12-21 | 2003-06-27 | 한국야금 주식회사 | 내마모성 공구용 박막 및 이를 이용하는 피복부재 |
| AT503050B1 (de) * | 2005-11-17 | 2007-09-15 | Boehlerit Gmbh & Co Kg | Metallcarbonitridschicht |
| PT1948842E (pt) * | 2005-11-17 | 2011-10-11 | Boehlerit Gmbh & Co Kg | Camada de carbonitreto de titânio e processo de produção de uma camada de carbonitreto de titânio |
| KR100791112B1 (ko) * | 2005-12-23 | 2008-01-04 | 한국야금 주식회사 | 절삭공구용 고경도 ｃｖｄ 다원소 복합막 |
| JP4753249B2 (ja) * | 2006-01-13 | 2011-08-24 | 株式会社神戸製鋼所 | ガラス成形用金型 |
| EP1897970B2 (en) * | 2006-09-05 | 2016-06-15 | Tungaloy Corporation | Coated cutting tool and method for producing the same |
| US8734070B2 (en) | 2010-10-20 | 2014-05-27 | Kennametal Inc. | Toolholder with externally-mounted dynamic absorber |
| US8524360B2 (en) | 2011-08-29 | 2013-09-03 | Kennametal Inc. | Cutting insert with a titanium oxycarbonitride coating and method for making the same |
| JP6022228B2 (ja) | 2011-09-14 | 2016-11-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| AT13091U1 (de) * | 2012-02-27 | 2013-06-15 | Ceratizit Austria Gmbh | Verfahren zur Herstellung einer Hartstoffschicht auf einem Substrat, Hartstoffschicht sowie Zerspanwerkzeug |
| KR101456685B1 (ko) | 2013-03-08 | 2014-11-12 | 부산대학교 산학협력단 | 금속 부품의 고경도 표면코팅 방법 |
| JP7603004B2 (ja) | 2018-09-28 | 2024-12-19 | コーニング インコーポレイテッド | 金属基板上に無機粒子を堆積させるための低温法及びこの低温法によって製造される物品 |
| US11464102B2 (en) * | 2018-10-06 | 2022-10-04 | Fermi Research Alliance, Llc | Methods and systems for treatment of superconducting materials to improve low field performance |
| US12305293B2 (en) * | 2019-05-27 | 2025-05-20 | Ab Sandvik Coromant | Coated cutting tool |
| JP7425990B2 (ja) * | 2020-03-19 | 2024-02-01 | 三菱マテリアル株式会社 | 表面被覆切削工具の製造方法 |
| CN116162918B (zh) * | 2023-04-26 | 2023-07-14 | 赣州澳克泰工具技术有限公司 | 一种高硬度高韧性的刀具涂层及制备方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3846162A (en) * | 1968-10-21 | 1974-11-05 | Texas Instruments Inc | Metal carbonitride coatings |
| US4196233A (en) * | 1974-02-07 | 1980-04-01 | Ciba-Geigy Corporation | Process for coating inorganic substrates with carbides, nitrides and/or carbonitrides |
| US5436071A (en) * | 1990-01-31 | 1995-07-25 | Mitsubishi Materials Corporation | Cermet cutting tool and process for producing the same |
| JP3109272B2 (ja) * | 1992-08-04 | 2000-11-13 | 三菱マテリアル株式会社 | 耐欠損性および耐摩耗性にすぐれた表面被覆炭窒化チタン基サーメット製切削工具 |
| JP2585470B2 (ja) * | 1991-01-14 | 1997-02-26 | 日本碍子株式会社 | ハニカム構造体押出用口金の製造方法 |
| DE4239234A1 (de) * | 1992-11-21 | 1994-06-09 | Krupp Widia Gmbh | Werkzeug und Verfahren zur Beschichtung eines Werkzeuggrundkörpers |
| US5681651A (en) * | 1992-11-27 | 1997-10-28 | Mitsubishi Materials Corporation | Multilayer coated hard alloy cutting tool |
| SE514737C2 (sv) * | 1994-03-22 | 2001-04-09 | Sandvik Ab | Belagt skärverktyg av hårdmetall |
| US5652045A (en) * | 1994-10-20 | 1997-07-29 | Mitsubishi Materials Corporation | Coated tungsten carbide-based cemented carbide blade member |
| US5786069A (en) * | 1995-09-01 | 1998-07-28 | Sandvik Ab | Coated turning insert |
| JPH09310179A (ja) * | 1996-05-20 | 1997-12-02 | Mitsubishi Materials Corp | 減圧式縦型化学蒸着装置および化学蒸着方法 |
| SE510778C2 (sv) * | 1996-07-11 | 1999-06-21 | Sandvik Ab | Belagt skär för finfräsning av grått gjutjärn |
| US6146697A (en) * | 1999-03-02 | 2000-11-14 | Kennametal Inc. | MT CVD process |
-
1999
- 1999-03-02 US US09/261,001 patent/US6146697A/en not_active Expired - Lifetime
-
2000
- 2000-02-24 AT AT00913591T patent/ATE227358T1/de not_active IP Right Cessation
- 2000-02-24 DE DE60000725T patent/DE60000725T2/de not_active Expired - Lifetime
- 2000-02-24 CA CA002360713A patent/CA2360713A1/en not_active Abandoned
- 2000-02-24 CN CN00804441A patent/CN1342216A/zh active Pending
- 2000-02-24 IL IL14450000A patent/IL144500A0/xx unknown
- 2000-02-24 ES ES00913591T patent/ES2184704T3/es not_active Expired - Lifetime
- 2000-02-24 WO PCT/US2000/004682 patent/WO2000052224A1/en not_active Ceased
- 2000-02-24 JP JP2000602831A patent/JP4728486B2/ja not_active Expired - Fee Related
- 2000-02-24 EP EP00913591A patent/EP1157143B1/en not_active Revoked
- 2000-02-24 DE DE1157143T patent/DE1157143T1/de active Pending
- 2000-02-24 KR KR1020017011047A patent/KR100661977B1/ko not_active Expired - Fee Related
-
2011
- 2011-02-10 JP JP2011026981A patent/JP2011137238A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1157143B1 (en) | 2002-11-06 |
| DE1157143T1 (de) | 2002-07-04 |
| DE60000725D1 (de) | 2002-12-12 |
| WO2000052224A1 (en) | 2000-09-08 |
| EP1157143A1 (en) | 2001-11-28 |
| DE60000725T2 (de) | 2003-08-21 |
| JP2011137238A (ja) | 2011-07-14 |
| ATE227358T1 (de) | 2002-11-15 |
| CN1342216A (zh) | 2002-03-27 |
| US6146697A (en) | 2000-11-14 |
| JP2002538308A (ja) | 2002-11-12 |
| ES2184704T3 (es) | 2003-04-16 |
| IL144500A0 (en) | 2002-05-23 |
| KR100661977B1 (ko) | 2006-12-27 |
| KR20010105364A (ko) | 2001-11-28 |
| JP4728486B2 (ja) | 2011-07-20 |
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