DE4230512C2 - Verfahren zur Herstellung von Halbleiterspeicherelementen - Google Patents
Verfahren zur Herstellung von HalbleiterspeicherelementenInfo
- Publication number
- DE4230512C2 DE4230512C2 DE4230512A DE4230512A DE4230512C2 DE 4230512 C2 DE4230512 C2 DE 4230512C2 DE 4230512 A DE4230512 A DE 4230512A DE 4230512 A DE4230512 A DE 4230512A DE 4230512 C2 DE4230512 C2 DE 4230512C2
- Authority
- DE
- Germany
- Prior art keywords
- film
- doped polysilicon
- oxide film
- etching
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 68
- 229920005591 polysilicon Polymers 0.000 claims description 68
- 238000009499 grossing Methods 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 39
- 239000003990 capacitor Substances 0.000 claims description 35
- 150000004767 nitrides Chemical class 0.000 claims description 29
- 238000003860 storage Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000001556 precipitation Methods 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910016002A KR940004606B1 (ko) | 1991-09-13 | 1991-09-13 | 반도체 메모리 커패시터 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4230512A1 DE4230512A1 (de) | 1993-03-18 |
| DE4230512C2 true DE4230512C2 (de) | 2003-04-24 |
Family
ID=19319918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4230512A Expired - Fee Related DE4230512C2 (de) | 1991-09-13 | 1992-09-11 | Verfahren zur Herstellung von Halbleiterspeicherelementen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5231044A (enExample) |
| JP (1) | JP3227485B2 (enExample) |
| KR (1) | KR940004606B1 (enExample) |
| DE (1) | DE4230512C2 (enExample) |
| TW (1) | TW225610B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478782A (en) * | 1992-05-25 | 1995-12-26 | Sony Corporation | Method bonding for production of SOI transistor device |
| KR960011664B1 (ko) * | 1993-05-21 | 1996-08-24 | 현대전자산업 주식회사 | 반도체 장치의 캐패시터 형성방법 |
| US5508881A (en) * | 1994-02-01 | 1996-04-16 | Quality Microcircuits Corporation | Capacitors and interconnect lines for use with integrated circuits |
| US5538592A (en) * | 1994-07-22 | 1996-07-23 | International Business Machines Corporation | Non-random sub-lithography vertical stack capacitor |
| US5665622A (en) * | 1995-03-15 | 1997-09-09 | International Business Machines Corporation | Folded trench and rie/deposition process for high-value capacitors |
| US5523542A (en) * | 1995-05-15 | 1996-06-04 | United Microelectronics Corp. | Method for making dynamic random access memory cell capacitor |
| US5529946A (en) * | 1995-06-30 | 1996-06-25 | United Microelectronics Corporation | Process of fabricating DRAM storage capacitors |
| US6197671B1 (en) * | 1997-09-30 | 2001-03-06 | National Semiconductor Corporation | Multiple finger polysilicon gate structure and method of making |
| TW381342B (en) * | 1998-06-17 | 2000-02-01 | United Microelectronics Corp | Self-alignment capacitor manufacturing method |
| US8854865B2 (en) * | 2010-11-24 | 2014-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US10497602B2 (en) * | 2016-08-01 | 2019-12-03 | Semiconductor Components Industries, Llc | Process of forming an electronic device including forming an electronic component and removing a portion of a substrate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4102184A1 (de) * | 1990-01-26 | 1991-08-08 | Mitsubishi Electric Corp | Dynamischer schreib-/lesespeicher mit einem kondensator vom gestapelten typ und verfahren zum herstellen eines solchen |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6474752A (en) * | 1987-09-17 | 1989-03-20 | Matsushita Electric Industrial Co Ltd | Manufacture of semiconductor device |
| JP2724209B2 (ja) * | 1989-06-20 | 1998-03-09 | シャープ株式会社 | 半導体メモリ素子の製造方法 |
| JPH0391957A (ja) * | 1989-09-04 | 1991-04-17 | Sony Corp | メモリ装置の製造方法 |
| US5155057A (en) * | 1990-11-05 | 1992-10-13 | Micron Technology, Inc. | Stacked v-cell capacitor using a disposable composite dielectric on top of a digit line |
| US5061650A (en) * | 1991-01-17 | 1991-10-29 | Micron Technology, Inc. | Method for formation of a stacked capacitor |
| US5084405A (en) * | 1991-06-07 | 1992-01-28 | Micron Technology, Inc. | Process to fabricate a double ring stacked cell structure |
-
1991
- 1991-09-13 KR KR1019910016002A patent/KR940004606B1/ko not_active Expired - Fee Related
-
1992
- 1992-09-04 TW TW081107030A patent/TW225610B/zh active
- 1992-09-11 JP JP26793592A patent/JP3227485B2/ja not_active Expired - Fee Related
- 1992-09-11 DE DE4230512A patent/DE4230512C2/de not_active Expired - Fee Related
- 1992-09-14 US US07/944,860 patent/US5231044A/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4102184A1 (de) * | 1990-01-26 | 1991-08-08 | Mitsubishi Electric Corp | Dynamischer schreib-/lesespeicher mit einem kondensator vom gestapelten typ und verfahren zum herstellen eines solchen |
Non-Patent Citations (2)
| Title |
|---|
| A NOVEL STACKED CAPACITOR CELL WITH DUAL CELL PLATE FOR 64Mb DRAMs. In: IDEM 90,S.651-654 * |
| STACKED CAPACITOR DRAM CELL WITH VERTICAL FINS (VF-STC). In: IBM Technical Disclosure Bulletin, Vol.33,No.2,July 1990,S.245-247 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US5231044A (en) | 1993-07-27 |
| JPH05235297A (ja) | 1993-09-10 |
| KR940004606B1 (ko) | 1994-05-25 |
| DE4230512A1 (de) | 1993-03-18 |
| TW225610B (enExample) | 1994-06-21 |
| KR930006927A (ko) | 1993-04-22 |
| JP3227485B2 (ja) | 2001-11-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8110 | Request for examination paragraph 44 | ||
| 8304 | Grant after examination procedure | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |