KR940004606B1 - 반도체 메모리 커패시터 제조방법 - Google Patents

반도체 메모리 커패시터 제조방법 Download PDF

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Publication number
KR940004606B1
KR940004606B1 KR1019910016002A KR910016002A KR940004606B1 KR 940004606 B1 KR940004606 B1 KR 940004606B1 KR 1019910016002 A KR1019910016002 A KR 1019910016002A KR 910016002 A KR910016002 A KR 910016002A KR 940004606 B1 KR940004606 B1 KR 940004606B1
Authority
KR
South Korea
Prior art keywords
forming
oxide film
polysilicon
depositing
storage node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910016002A
Other languages
English (en)
Korean (ko)
Other versions
KR930006927A (ko
Inventor
전영권
Original Assignee
금성일렉트론 주식회사
문정환
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사, 문정환 filed Critical 금성일렉트론 주식회사
Priority to KR1019910016002A priority Critical patent/KR940004606B1/ko
Priority to TW081107030A priority patent/TW225610B/zh
Priority to JP26793592A priority patent/JP3227485B2/ja
Priority to DE4230512A priority patent/DE4230512C2/de
Priority to US07/944,860 priority patent/US5231044A/en
Publication of KR930006927A publication Critical patent/KR930006927A/ko
Application granted granted Critical
Publication of KR940004606B1 publication Critical patent/KR940004606B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/485—Bit line contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1019910016002A 1991-09-13 1991-09-13 반도체 메모리 커패시터 제조방법 Expired - Fee Related KR940004606B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019910016002A KR940004606B1 (ko) 1991-09-13 1991-09-13 반도체 메모리 커패시터 제조방법
TW081107030A TW225610B (enExample) 1991-09-13 1992-09-04
JP26793592A JP3227485B2 (ja) 1991-09-13 1992-09-11 半導体メモリ素子の製造方法
DE4230512A DE4230512C2 (de) 1991-09-13 1992-09-11 Verfahren zur Herstellung von Halbleiterspeicherelementen
US07/944,860 US5231044A (en) 1991-09-13 1992-09-14 Method of making semiconductor memory elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910016002A KR940004606B1 (ko) 1991-09-13 1991-09-13 반도체 메모리 커패시터 제조방법

Publications (2)

Publication Number Publication Date
KR930006927A KR930006927A (ko) 1993-04-22
KR940004606B1 true KR940004606B1 (ko) 1994-05-25

Family

ID=19319918

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910016002A Expired - Fee Related KR940004606B1 (ko) 1991-09-13 1991-09-13 반도체 메모리 커패시터 제조방법

Country Status (5)

Country Link
US (1) US5231044A (enExample)
JP (1) JP3227485B2 (enExample)
KR (1) KR940004606B1 (enExample)
DE (1) DE4230512C2 (enExample)
TW (1) TW225610B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5478782A (en) * 1992-05-25 1995-12-26 Sony Corporation Method bonding for production of SOI transistor device
KR960011664B1 (ko) * 1993-05-21 1996-08-24 현대전자산업 주식회사 반도체 장치의 캐패시터 형성방법
US5508881A (en) * 1994-02-01 1996-04-16 Quality Microcircuits Corporation Capacitors and interconnect lines for use with integrated circuits
US5538592A (en) * 1994-07-22 1996-07-23 International Business Machines Corporation Non-random sub-lithography vertical stack capacitor
US5665622A (en) * 1995-03-15 1997-09-09 International Business Machines Corporation Folded trench and rie/deposition process for high-value capacitors
US5523542A (en) * 1995-05-15 1996-06-04 United Microelectronics Corp. Method for making dynamic random access memory cell capacitor
US5529946A (en) * 1995-06-30 1996-06-25 United Microelectronics Corporation Process of fabricating DRAM storage capacitors
US6197671B1 (en) * 1997-09-30 2001-03-06 National Semiconductor Corporation Multiple finger polysilicon gate structure and method of making
TW381342B (en) * 1998-06-17 2000-02-01 United Microelectronics Corp Self-alignment capacitor manufacturing method
US8854865B2 (en) * 2010-11-24 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US10497602B2 (en) * 2016-08-01 2019-12-03 Semiconductor Components Industries, Llc Process of forming an electronic device including forming an electronic component and removing a portion of a substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6474752A (en) * 1987-09-17 1989-03-20 Matsushita Electric Industrial Co Ltd Manufacture of semiconductor device
JP2724209B2 (ja) * 1989-06-20 1998-03-09 シャープ株式会社 半導体メモリ素子の製造方法
JPH0391957A (ja) * 1989-09-04 1991-04-17 Sony Corp メモリ装置の製造方法
IT1245495B (it) * 1990-01-26 1994-09-27 Mitsubishi Electric Corp Memoria ad accesso casuale dinamica avente un condensatore del tipo impilato e procedimento di fabbricazione di essa
US5155057A (en) * 1990-11-05 1992-10-13 Micron Technology, Inc. Stacked v-cell capacitor using a disposable composite dielectric on top of a digit line
US5061650A (en) * 1991-01-17 1991-10-29 Micron Technology, Inc. Method for formation of a stacked capacitor
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure

Also Published As

Publication number Publication date
US5231044A (en) 1993-07-27
JPH05235297A (ja) 1993-09-10
DE4230512A1 (de) 1993-03-18
TW225610B (enExample) 1994-06-21
DE4230512C2 (de) 2003-04-24
KR930006927A (ko) 1993-04-22
JP3227485B2 (ja) 2001-11-12

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