JPS6474752A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6474752A
JPS6474752A JP62232821A JP23282187A JPS6474752A JP S6474752 A JPS6474752 A JP S6474752A JP 62232821 A JP62232821 A JP 62232821A JP 23282187 A JP23282187 A JP 23282187A JP S6474752 A JPS6474752 A JP S6474752A
Authority
JP
Japan
Prior art keywords
film
capacitor
poly
method
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62232821A
Inventor
Nobuo Aoi
Yoshitaka Dansui
Masabumi Kubota
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP62232821A priority Critical patent/JPS6474752A/en
Publication of JPS6474752A publication Critical patent/JPS6474752A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • H01L27/10805Dynamic random access memory structures with one-transistor one-capacitor memory cells
    • H01L27/10808Dynamic random access memory structures with one-transistor one-capacitor memory cells the storage electrode stacked over transistor
    • H01L27/10817Dynamic random access memory structures with one-transistor one-capacitor memory cells the storage electrode stacked over transistor the storage electrode having multiple wings

Abstract

PURPOSE:To increase remarkedly the surface area of a capacitor plate and to obtain a sufficient capacity even in a fine area by a method wherein a roughness is provided on the capacitor plate itself. CONSTITUTION:A first oxide film 7, a first poly-Si film 8, a second oxide film 9 and a second poly-Si film 10 are each deposited on a MOS transistor formed on an Si substrate by a known method in a desired thickness by a CVD method. The poly-Si film 10 is etched by anisotropic etching and is made to remain only on the sidewall part of the film 9. Then, after the film 9 only is selectively removed by etching of a high selection ratio to polysilicon, a capacitor oxide film is deposited by a CVD method or a thermal oxidation method. Then, a third poly-Si film 12 is deposited in a desired thickness by a CVD method and is patterned by a photolithographic method to form a capacitor. Thereby, a capacity of 4 times or thereabouts compared to the conventional capacitor of the same area as that of the capacitor can be obtained.
JP62232821A 1987-09-17 1987-09-17 Manufacture of semiconductor device Pending JPS6474752A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232821A JPS6474752A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232821A JPS6474752A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6474752A true JPS6474752A (en) 1989-03-20

Family

ID=16945308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232821A Pending JPS6474752A (en) 1987-09-17 1987-09-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6474752A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02267962A (en) * 1989-04-07 1990-11-01 Nec Corp Semiconductor memory cell and its manufacture
EP0404553A1 (en) * 1989-06-20 1990-12-27 Sharp Kabushiki Kaisha Semiconductor memory device
EP0443439A2 (en) * 1990-02-23 1991-08-28 INSTITUT FÜR HALBLEITERPHYSIK FRANKFURT (ODER) GmbH One-transistor-storage cell device and method for making the same
JPH03296264A (en) * 1990-04-16 1991-12-26 Nec Corp Semiconductor memory cell and its manufacture
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure
US5126280A (en) * 1991-02-08 1992-06-30 Micron Technology, Inc. Stacked multi-poly spacers with double cell plate capacitor
US5150276A (en) * 1992-01-24 1992-09-22 Micron Technology, Inc. Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings
US5162248A (en) * 1992-03-13 1992-11-10 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5217914A (en) * 1990-04-10 1993-06-08 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor integration circuit with stacked capacitor cells
US5231044A (en) * 1991-09-13 1993-07-27 Goldstar Electron Co., Ltd. Method of making semiconductor memory elements
US5266512A (en) * 1991-10-23 1993-11-30 Motorola, Inc. Method for forming a nested surface capacitor
US5270241A (en) * 1992-03-13 1993-12-14 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5278091A (en) * 1993-05-04 1994-01-11 Micron Semiconductor, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node
US5314835A (en) * 1989-06-20 1994-05-24 Sharp Kabushiki Kaisha Semiconductor memory device
US5364809A (en) * 1991-05-23 1994-11-15 Samsung Electronics Co., Ltd. Method of fabricating a capacitor for a dynamic random access memory cell
USRE39665E1 (en) 1992-03-13 2007-05-29 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142665A (en) * 1986-12-05 1988-06-15 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63142665A (en) * 1986-12-05 1988-06-15 Oki Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02267962A (en) * 1989-04-07 1990-11-01 Nec Corp Semiconductor memory cell and its manufacture
EP0404553A1 (en) * 1989-06-20 1990-12-27 Sharp Kabushiki Kaisha Semiconductor memory device
JPH0322559A (en) * 1989-06-20 1991-01-30 Sharp Corp Semiconductor memory element and manufacture thereof
US5334869A (en) * 1989-06-20 1994-08-02 Sharp Kabushiki Kaisha Semiconductor memory device
US5314835A (en) * 1989-06-20 1994-05-24 Sharp Kabushiki Kaisha Semiconductor memory device
EP0443439A2 (en) * 1990-02-23 1991-08-28 INSTITUT FÜR HALBLEITERPHYSIK FRANKFURT (ODER) GmbH One-transistor-storage cell device and method for making the same
US5217914A (en) * 1990-04-10 1993-06-08 Matsushita Electric Industrial Co., Ltd. Method for making semiconductor integration circuit with stacked capacitor cells
JPH03296264A (en) * 1990-04-16 1991-12-26 Nec Corp Semiconductor memory cell and its manufacture
US5126280A (en) * 1991-02-08 1992-06-30 Micron Technology, Inc. Stacked multi-poly spacers with double cell plate capacitor
US5364809A (en) * 1991-05-23 1994-11-15 Samsung Electronics Co., Ltd. Method of fabricating a capacitor for a dynamic random access memory cell
US5084405A (en) * 1991-06-07 1992-01-28 Micron Technology, Inc. Process to fabricate a double ring stacked cell structure
US5231044A (en) * 1991-09-13 1993-07-27 Goldstar Electron Co., Ltd. Method of making semiconductor memory elements
US5266512A (en) * 1991-10-23 1993-11-30 Motorola, Inc. Method for forming a nested surface capacitor
US5150276A (en) * 1992-01-24 1992-09-22 Micron Technology, Inc. Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings
US5270241A (en) * 1992-03-13 1993-12-14 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5162248A (en) * 1992-03-13 1992-11-10 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
USRE39665E1 (en) 1992-03-13 2007-05-29 Micron Technology, Inc. Optimized container stacked capacitor DRAM cell utilizing sacrificial oxide deposition and chemical mechanical polishing
US5278091A (en) * 1993-05-04 1994-01-11 Micron Semiconductor, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node
USRE36786E (en) * 1993-05-04 2000-07-18 Micron Technology, Inc. Process to manufacture crown stacked capacitor structures with HSG-rugged polysilicon on all sides of the storage node

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