DE4127795A1 - Herstellungsverfahren und aufbau eines mos-transistors - Google Patents
Herstellungsverfahren und aufbau eines mos-transistorsInfo
- Publication number
- DE4127795A1 DE4127795A1 DE4127795A DE4127795A DE4127795A1 DE 4127795 A1 DE4127795 A1 DE 4127795A1 DE 4127795 A DE4127795 A DE 4127795A DE 4127795 A DE4127795 A DE 4127795A DE 4127795 A1 DE4127795 A1 DE 4127795A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- semiconductor
- substrate
- insulation layer
- trenches
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000004065 semiconductor Substances 0.000 claims abstract description 47
- 238000009413 insulation Methods 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 3
- 244000309466 calf Species 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 47
- 238000002955 isolation Methods 0.000 description 8
- 230000010354 integration Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66651—Lateral single gate silicon transistors with a single crystalline channel formed on the silicon substrate after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910009066A KR920022546A (ko) | 1991-05-31 | 1991-05-31 | 모오스 트랜지스터의 구조 및 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE4127795A1 true DE4127795A1 (de) | 1992-12-03 |
Family
ID=19315297
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4127795A Withdrawn DE4127795A1 (de) | 1991-05-31 | 1991-08-22 | Herstellungsverfahren und aufbau eines mos-transistors |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPH04368180A (ko) |
| KR (1) | KR920022546A (ko) |
| DE (1) | DE4127795A1 (ko) |
| GB (1) | GB2256315A (ko) |
| IT (1) | IT1250089B (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6762448B1 (en) * | 2003-04-03 | 2004-07-13 | Advanced Micro Devices, Inc. | FinFET device with multiple fin structures |
| US7385247B2 (en) * | 2004-01-17 | 2008-06-10 | Samsung Electronics Co., Ltd. | At least penta-sided-channel type of FinFET transistor |
| WO2006006438A1 (ja) * | 2004-07-12 | 2006-01-19 | Nec Corporation | 半導体装置及びその製造方法 |
| US20060071270A1 (en) * | 2004-09-29 | 2006-04-06 | Shibib Muhammed A | Metal-oxide-semiconductor device having trenched diffusion region and method of forming same |
| TWI263328B (en) * | 2005-01-04 | 2006-10-01 | Samsung Electronics Co Ltd | Semiconductor devices having faceted channels and methods of fabricating such devices |
| JP4849504B2 (ja) * | 2005-03-29 | 2012-01-11 | ラピスセミコンダクタ株式会社 | 半導体装置、その製造方法、出力回路および電子機器 |
| JP2007005568A (ja) | 2005-06-23 | 2007-01-11 | Toshiba Corp | 半導体装置 |
| JP5270817B2 (ja) * | 2006-03-29 | 2013-08-21 | 株式会社東芝 | ３次元形状を有する半導体部材を加工する方法 |
| CN104078356B (zh) * | 2013-03-28 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | 分段沟道晶体管及其形成方法 |
| CN104952785A (zh) * | 2014-03-31 | 2015-09-30 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制作方法 |
| CN107342327A (zh) * | 2017-08-10 | 2017-11-10 | 睿力集成电路有限公司 | 一种半导体存储器的晶体管结构及制作方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5132075A (en) * | 1974-09-11 | 1976-03-18 | Tetsutaro Mori | Senkohodenkan no tentokairo |
| JPS5676575A (en) * | 1979-11-26 | 1981-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of junction type field effect semiconductor device |
| JPS5676576A (en) * | 1979-11-26 | 1981-06-24 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and manufacture thereof |
| NL188776C (nl) * | 1979-04-21 | 1992-09-16 | Nippon Telegraph & Telephone | Veldeffecttransistorinrichting en werkwijze voor het vervaardigen daarvan. |
| US4393391A (en) * | 1980-06-16 | 1983-07-12 | Supertex, Inc. | Power MOS transistor with a plurality of longitudinal grooves to increase channel conducting area |
| FR2501913A1 (fr) * | 1981-03-10 | 1982-09-17 | Thomson Csf | Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor |
| US4583107A (en) * | 1983-08-15 | 1986-04-15 | Westinghouse Electric Corp. | Castellated gate field effect transistor |
| FR2554639B1 (fr) * | 1983-11-08 | 1986-02-21 | Thomson Csf | Transistor a effet de champ a tension de seuil reglable, et circuit integre comportant ce type de transistors |
| EP0167810A1 (en) * | 1984-06-08 | 1986-01-15 | Eaton Corporation | Power JFET with plural lateral pinching |
-
1991
- 1991-05-31 KR KR1019910009066A patent/KR920022546A/ko not_active IP Right Cessation
- 1991-08-22 DE DE4127795A patent/DE4127795A1/de not_active Withdrawn
- 1991-08-23 JP JP3235678A patent/JPH04368180A/ja active Pending
- 1991-08-29 IT ITRM910646A patent/IT1250089B/it active IP Right Grant
- 1991-08-29 GB GB9118511A patent/GB2256315A/en not_active Withdrawn
Non-Patent Citations (6)
| Title |
|---|
| IBM Technical Disclosure Bulletin Vol. 29 No. 10, March 1987 pp 4305-07 * |
| IEEE Electron Device Letters, Vol. 10, No. 8 August 1989, pp 380-382 * |
| IEEE Electron Device Letters, Vol. 12, No. 3 March 1991, pp 108-110 * |
| IEEE Transactions on Electron Devices, Vol. 38, No. 3, March 1991 * |
| IEEE Transactions on Electron Devices, Vol. ED-34,No. 4, April 1987, pp 926-931 * |
| Phys. Bl. 44(1988) Nr. 10 S. 391-395 * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2256315A (en) | 1992-12-02 |
| IT1250089B (it) | 1995-03-30 |
| KR920022546A (ko) | 1992-12-19 |
| GB9118511D0 (en) | 1991-10-16 |
| ITRM910646A1 (it) | 1993-03-01 |
| ITRM910646A0 (it) | 1991-08-29 |
| JPH04368180A (ja) | 1992-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3816002C2 (ko) | ||
| DE60132994T2 (de) | Verfahren zur herstellung eines leistungs-mosfets | |
| DE102009035688B4 (de) | Halbleiterbauelement mit Trenchgatestruktur und Verfahren zur Herstellung desselben | |
| DE10353387B4 (de) | Verfahren zur Herstellung einer Leistungstransistoranordnung und Leistungstransistoranordnung | |
| DE102009051745B4 (de) | Hochvolt-Transistor mit Mehrfach-Dielektrikum und Herstellungsverfahren | |
| DE4208537C2 (de) | MOS-FET-Struktur und Verfahren zu deren Herstellung | |
| DE2502235A1 (de) | Ladungskopplungs-halbleiteranordnung | |
| DE4011276A1 (de) | Feldeffekttransistor mit isoliertem gate (igfet) | |
| DE19535140A1 (de) | Lateraler MOSFET mit hoher Stehspannung und einem Graben sowie Verfahren zu dessen Herstellung | |
| DE2903534A1 (de) | Feldeffekttransistor | |
| DE3601326A1 (de) | Halbleiter, insbesondere hochspannungs-mos-feldeffekt-halbleiter | |
| DE4405682A1 (de) | Struktur einer Halbleiteranordnung | |
| DE69627975T2 (de) | MOS-Transistor und Verfahren zu seiner Herstellung | |
| DE102004041622A1 (de) | Halbleiterbauteil | |
| DE19711729A1 (de) | Horizontal-Feldeffekttransistor und Verfahren zu seiner Herstellung | |
| DE10229146A1 (de) | Laterales Superjunction-Halbleiterbauteil | |
| EP0623960B1 (de) | IGBT mit mindestens zwei gegenüberliegenden Kanalgebieten pro Sourcegebiet und Verfahren zu dessen Herstellung | |
| DE4101130C2 (de) | MOS-Feldeffekttransistor und Verfahren zu dessen Herstellung | |
| DE1589687C3 (de) | Festkörperschaltung mit isolierten Feldeffekttransistoren und Verfahren zu ihrer Herstellung | |
| DE2922016A1 (de) | Vlsi-schaltungen | |
| DE4127795A1 (de) | Herstellungsverfahren und aufbau eines mos-transistors | |
| DE2937261A1 (de) | Mos-feldeffekttransistor | |
| EP0019722A1 (de) | Integrierte Ladungsverschiebe-Mikroschaltung | |
| DE102006002438A1 (de) | Halbleitervorrichtung und Verfahren zu ihrer Herstellung | |
| DE2953394T1 (de) | Dielectrically-isolated integrated circuit complementary transistors for high voltage use |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8130 | Withdrawal |