DE3942931A1 - Aufnehmer - Google Patents
AufnehmerInfo
- Publication number
- DE3942931A1 DE3942931A1 DE3942931A DE3942931A DE3942931A1 DE 3942931 A1 DE3942931 A1 DE 3942931A1 DE 3942931 A DE3942931 A DE 3942931A DE 3942931 A DE3942931 A DE 3942931A DE 3942931 A1 DE3942931 A1 DE 3942931A1
- Authority
- DE
- Germany
- Prior art keywords
- wafers
- transducer
- roughness
- micron
- less
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63326236A JPH02174116A (ja) | 1988-12-26 | 1988-12-26 | サセプタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3942931A1 true DE3942931A1 (de) | 1990-06-28 |
DE3942931C2 DE3942931C2 (ja) | 1993-07-15 |
Family
ID=18185510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3942931A Granted DE3942931A1 (de) | 1988-12-26 | 1989-12-23 | Aufnehmer |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH02174116A (ja) |
DE (1) | DE3942931A1 (ja) |
FR (1) | FR2640964B1 (ja) |
IT (1) | IT1236887B (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4026244A1 (de) * | 1990-08-18 | 1992-02-20 | Ant Nachrichtentech | Substrattraeger |
DE4222512A1 (de) * | 1992-07-09 | 1994-01-13 | Ant Nachrichtentech | Verfahren zur Herstellung von Bauelementen auf einem Substrat |
US5403401A (en) * | 1993-03-04 | 1995-04-04 | Xycarb B.V. | Substrate carrier |
US5580388A (en) * | 1993-01-21 | 1996-12-03 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
US5645646A (en) * | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
US5700725A (en) * | 1995-06-26 | 1997-12-23 | Lucent Technologies Inc. | Apparatus and method for making integrated circuits |
EP0840358A2 (en) * | 1996-11-05 | 1998-05-06 | Applied Materials, Inc. | Sloped substrate support |
US6368410B1 (en) * | 1999-06-28 | 2002-04-09 | General Electric Company | Semiconductor processing article |
WO2002097872A1 (fr) * | 2001-05-31 | 2002-12-05 | Shin-Etsu Handotai Co., Ltd. | Procede de production d'une tranche de semi-conducteur et suscepteur utilise a cet effet |
DE10334940A1 (de) * | 2003-07-31 | 2005-03-03 | Infineon Technologies Ag | Trägereinrichtung |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0492447A (ja) * | 1990-08-08 | 1992-03-25 | Shin Etsu Chem Co Ltd | 無機薄膜の成膜方法 |
DE19547601A1 (de) * | 1995-12-20 | 1997-06-26 | Sel Alcatel Ag | Vorrichtung zum Sintern von porösen Schichten |
JP3887052B2 (ja) * | 1996-12-13 | 2007-02-28 | 東洋炭素株式会社 | 気相成長用サセプター |
WO2001013423A1 (fr) | 1999-08-10 | 2001-02-22 | Ibiden Co., Ltd. | Plaque ceramique pour dispositif de production de semi-conducteurs |
JP4688363B2 (ja) * | 2001-07-31 | 2011-05-25 | 京セラ株式会社 | ウエハ加熱装置 |
US8021968B2 (en) | 2007-08-03 | 2011-09-20 | Shin-Etsu Handotai Co., Ltd. | Susceptor and method for manufacturing silicon epitaxial wafer |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1374137A (en) * | 1971-11-29 | 1974-11-13 | Crane Packing Co | Apparatus for holding a workpiece for a polishing operation |
DE8008012U1 (de) * | 1980-09-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halterung für Halbleiterscheiben | |
DE3438980A1 (de) * | 1983-11-01 | 1985-05-09 | Varian Associates, Inc., Palo Alto, Calif. | Halterung zum stuetzen eines werkstuecks |
DE3439371C2 (ja) * | 1983-10-31 | 1988-05-11 | Toshiba Kikai K.K., Tokio/Tokyo, Jp |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152465A (en) * | 1978-05-22 | 1979-11-30 | Nec Corp | Manufacture of epitaxial wafer |
JPS61242994A (ja) * | 1985-04-22 | 1986-10-29 | Toshiba Corp | 縦型気相成長装置 |
JP2671914B2 (ja) * | 1986-01-30 | 1997-11-05 | 東芝セラミックス 株式会社 | サセプタ |
US4761134B1 (en) * | 1987-03-30 | 1993-11-16 | Silicon carbide diffusion furnace components with an impervious coating thereon | |
JPS6447019A (en) * | 1987-08-18 | 1989-02-21 | Denki Kagaku Kogyo Kk | Glassy carbon coated susceptor |
-
1988
- 1988-12-26 JP JP63326236A patent/JPH02174116A/ja active Pending
-
1989
- 1989-12-19 IT IT02273389A patent/IT1236887B/it active IP Right Grant
- 1989-12-21 FR FR8916966A patent/FR2640964B1/fr not_active Expired - Fee Related
- 1989-12-23 DE DE3942931A patent/DE3942931A1/de active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE8008012U1 (de) * | 1980-09-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halterung für Halbleiterscheiben | |
GB1374137A (en) * | 1971-11-29 | 1974-11-13 | Crane Packing Co | Apparatus for holding a workpiece for a polishing operation |
DE3439371C2 (ja) * | 1983-10-31 | 1988-05-11 | Toshiba Kikai K.K., Tokio/Tokyo, Jp | |
DE3438980A1 (de) * | 1983-11-01 | 1985-05-09 | Varian Associates, Inc., Palo Alto, Calif. | Halterung zum stuetzen eines werkstuecks |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4026244A1 (de) * | 1990-08-18 | 1992-02-20 | Ant Nachrichtentech | Substrattraeger |
DE4222512A1 (de) * | 1992-07-09 | 1994-01-13 | Ant Nachrichtentech | Verfahren zur Herstellung von Bauelementen auf einem Substrat |
US5580388A (en) * | 1993-01-21 | 1996-12-03 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
US5403401A (en) * | 1993-03-04 | 1995-04-04 | Xycarb B.V. | Substrate carrier |
US6146464A (en) * | 1994-02-25 | 2000-11-14 | Applied Materials, Inc. | Susceptor for deposition apparatus |
US5645646A (en) * | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
US5700725A (en) * | 1995-06-26 | 1997-12-23 | Lucent Technologies Inc. | Apparatus and method for making integrated circuits |
US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
EP0840358A2 (en) * | 1996-11-05 | 1998-05-06 | Applied Materials, Inc. | Sloped substrate support |
EP0840358A3 (en) * | 1996-11-05 | 2004-01-14 | Applied Materials, Inc. | Sloped substrate support |
US6368410B1 (en) * | 1999-06-28 | 2002-04-09 | General Electric Company | Semiconductor processing article |
US6706205B2 (en) | 1999-06-28 | 2004-03-16 | General Electric Company | Semiconductor processing article |
WO2002097872A1 (fr) * | 2001-05-31 | 2002-12-05 | Shin-Etsu Handotai Co., Ltd. | Procede de production d'une tranche de semi-conducteur et suscepteur utilise a cet effet |
DE10334940A1 (de) * | 2003-07-31 | 2005-03-03 | Infineon Technologies Ag | Trägereinrichtung |
DE10334940B4 (de) * | 2003-07-31 | 2007-08-23 | Infineon Technologies Ag | Trägereinrichtung |
Also Published As
Publication number | Publication date |
---|---|
IT8922733A0 (it) | 1989-12-19 |
FR2640964B1 (ja) | 1993-06-11 |
DE3942931C2 (ja) | 1993-07-15 |
IT1236887B (it) | 1993-04-26 |
IT8922733A1 (it) | 1991-06-19 |
JPH02174116A (ja) | 1990-07-05 |
FR2640964A1 (ja) | 1990-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3942931A1 (de) | Aufnehmer | |
DE10329072B4 (de) | Halbleiterwafer-Behandlungselement | |
EP0914676B1 (de) | Bauteil aus quarzglas für die verwendung bei der halbleiterherstellung | |
DE69931221T2 (de) | SOI-Substrat und Herstellungsverfahren dafür | |
DE2846398A1 (de) | Verfahren zum zertrennen einer halbleiterplatte in mehrere plaettchen | |
DE10323302A1 (de) | Vakuumunterstützte adhäsive Haltevorrichtung für Dünnstglas | |
DE4342976A1 (de) | Vertikale Vorrichtung zur Wärmebehandlung von Halbleitern | |
DE102016222005B4 (de) | Verfahren der Fertigung einer Halbleitervorrichtung | |
EP0857542B1 (de) | Verfahren zur Herstellung einer einseitig beschichteten und mit einem Finish versehenen Halbleiterscheibe | |
DE3524301A1 (de) | Verfahren zum herstellen von halbleiterelementen | |
DE2947270C3 (de) | Keramiksubstrat für Halbleiterbauelemente | |
DE3930045C2 (ja) | ||
DE102014116342B4 (de) | Substrathaltevorrichtung und Verfahren zum Prozessieren eines Substrats | |
JPH0534081B2 (ja) | ||
DE3837584C2 (ja) | ||
DE3922563A1 (de) | Verfahren zur herstellung eines halbleiter-wafers | |
DE19741971A1 (de) | Verfahren zum Herstellen Direct-Wafer-Bond Si/Si02/Si-Substrate | |
EP3185075A1 (de) | Vorrichtung für belichtungssystem | |
DE102018126747A1 (de) | Wafer und Verfahren zur Analyse seiner Form | |
DE2620814C3 (de) | Verfahren zur Herstellung einer dielektrisch isolierten Unterlage fur integrierte Halbleiterschaltungen | |
DE202015009830U1 (de) | Vorrichtung für Belichtungssystem | |
EP0234244A3 (de) | Verfahren um vertikale Seitenwände und Böden von Vertiefungen zu dotieren | |
DE102022101721A1 (de) | PECVD Beschichtungsverfahren | |
DE4006070A1 (de) | Verfahren und einrichtung zum zerteilen einer scheibe aus halbleitermaterial | |
DE2950541A1 (de) | Verfahren zur oberflaechenbehandlung von jsiliziumplatten bei der halbleiterherstellung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |