FR2640964B1 - - Google Patents

Info

Publication number
FR2640964B1
FR2640964B1 FR8916966A FR8916966A FR2640964B1 FR 2640964 B1 FR2640964 B1 FR 2640964B1 FR 8916966 A FR8916966 A FR 8916966A FR 8916966 A FR8916966 A FR 8916966A FR 2640964 B1 FR2640964 B1 FR 2640964B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8916966A
Other versions
FR2640964A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of FR2640964A1 publication Critical patent/FR2640964A1/fr
Application granted granted Critical
Publication of FR2640964B1 publication Critical patent/FR2640964B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
FR8916966A 1988-12-26 1989-12-21 Expired - Fee Related FR2640964B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63326236A JPH02174116A (ja) 1988-12-26 1988-12-26 サセプタ

Publications (2)

Publication Number Publication Date
FR2640964A1 FR2640964A1 (fr) 1990-06-29
FR2640964B1 true FR2640964B1 (fr) 1993-06-11

Family

ID=18185510

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8916966A Expired - Fee Related FR2640964B1 (fr) 1988-12-26 1989-12-21

Country Status (4)

Country Link
JP (1) JPH02174116A (fr)
DE (1) DE3942931A1 (fr)
FR (1) FR2640964B1 (fr)
IT (1) IT1236887B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492447A (ja) * 1990-08-08 1992-03-25 Shin Etsu Chem Co Ltd 無機薄膜の成膜方法
DE4026244C2 (de) * 1990-08-18 1996-02-08 Ant Nachrichtentech Substratträger
DE4222512C2 (de) * 1992-07-09 1994-06-16 Ant Nachrichtentech Verfahren zum Halten eines Halbleitersubstrats während der Bauelementeherstellung
US5580388A (en) * 1993-01-21 1996-12-03 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
NL9300389A (nl) * 1993-03-04 1994-10-03 Xycarb Bv Substraatdrager.
US5645646A (en) * 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
US5700725A (en) * 1995-06-26 1997-12-23 Lucent Technologies Inc. Apparatus and method for making integrated circuits
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
DE19547601A1 (de) * 1995-12-20 1997-06-26 Sel Alcatel Ag Vorrichtung zum Sintern von porösen Schichten
US6395363B1 (en) * 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
JP3887052B2 (ja) * 1996-12-13 2007-02-28 東洋炭素株式会社 気相成長用サセプター
US6368410B1 (en) * 1999-06-28 2002-04-09 General Electric Company Semiconductor processing article
WO2001013423A1 (fr) 1999-08-10 2001-02-22 Ibiden Co., Ltd. Plaque ceramique pour dispositif de production de semi-conducteurs
WO2002097872A1 (fr) * 2001-05-31 2002-12-05 Shin-Etsu Handotai Co., Ltd. Procede de production d'une tranche de semi-conducteur et suscepteur utilise a cet effet
JP4688363B2 (ja) * 2001-07-31 2011-05-25 京セラ株式会社 ウエハ加熱装置
DE10334940B4 (de) * 2003-07-31 2007-08-23 Infineon Technologies Ag Trägereinrichtung
US8021968B2 (en) 2007-08-03 2011-09-20 Shin-Etsu Handotai Co., Ltd. Susceptor and method for manufacturing silicon epitaxial wafer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8008012U1 (de) * 1980-09-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halterung für Halbleiterscheiben
US3747282A (en) * 1971-11-29 1973-07-24 E Katzke Apparatus for polishing wafers
JPS54152465A (en) * 1978-05-22 1979-11-30 Nec Corp Manufacture of epitaxial wafer
US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
JPS6099538A (ja) * 1983-11-01 1985-06-03 横河・ヒュ−レット・パッカ−ド株式会社 ピンチヤツク
JPS61242994A (ja) * 1985-04-22 1986-10-29 Toshiba Corp 縦型気相成長装置
JP2671914B2 (ja) * 1986-01-30 1997-11-05 東芝セラミックス 株式会社 サセプタ
US4761134B1 (en) * 1987-03-30 1993-11-16 Silicon carbide diffusion furnace components with an impervious coating thereon
JPS6447019A (en) * 1987-08-18 1989-02-21 Denki Kagaku Kogyo Kk Glassy carbon coated susceptor

Also Published As

Publication number Publication date
IT8922733A0 (it) 1989-12-19
DE3942931C2 (fr) 1993-07-15
IT1236887B (it) 1993-04-26
IT8922733A1 (it) 1991-06-19
JPH02174116A (ja) 1990-07-05
FR2640964A1 (fr) 1990-06-29
DE3942931A1 (de) 1990-06-28

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Legal Events

Date Code Title Description
ST Notification of lapse