DE3942931C2 - - Google Patents
Info
- Publication number
- DE3942931C2 DE3942931C2 DE3942931A DE3942931A DE3942931C2 DE 3942931 C2 DE3942931 C2 DE 3942931C2 DE 3942931 A DE3942931 A DE 3942931A DE 3942931 A DE3942931 A DE 3942931A DE 3942931 C2 DE3942931 C2 DE 3942931C2
- Authority
- DE
- Germany
- Prior art keywords
- wafers
- transducer
- roughness
- surface area
- mating surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63326236A JPH02174116A (ja) | 1988-12-26 | 1988-12-26 | サセプタ |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3942931A1 DE3942931A1 (de) | 1990-06-28 |
DE3942931C2 true DE3942931C2 (ja) | 1993-07-15 |
Family
ID=18185510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3942931A Granted DE3942931A1 (de) | 1988-12-26 | 1989-12-23 | Aufnehmer |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH02174116A (ja) |
DE (1) | DE3942931A1 (ja) |
FR (1) | FR2640964B1 (ja) |
IT (1) | IT1236887B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19547601A1 (de) * | 1995-12-20 | 1997-06-26 | Sel Alcatel Ag | Vorrichtung zum Sintern von porösen Schichten |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0492447A (ja) * | 1990-08-08 | 1992-03-25 | Shin Etsu Chem Co Ltd | 無機薄膜の成膜方法 |
DE4026244C2 (de) * | 1990-08-18 | 1996-02-08 | Ant Nachrichtentech | Substratträger |
DE4222512C2 (de) * | 1992-07-09 | 1994-06-16 | Ant Nachrichtentech | Verfahren zum Halten eines Halbleitersubstrats während der Bauelementeherstellung |
US5580388A (en) * | 1993-01-21 | 1996-12-03 | Moore Epitaxial, Inc. | Multi-layer susceptor for rapid thermal process reactors |
NL9300389A (nl) * | 1993-03-04 | 1994-10-03 | Xycarb Bv | Substraatdrager. |
US5645646A (en) * | 1994-02-25 | 1997-07-08 | Applied Materials, Inc. | Susceptor for deposition apparatus |
US5700725A (en) * | 1995-06-26 | 1997-12-23 | Lucent Technologies Inc. | Apparatus and method for making integrated circuits |
US5584936A (en) * | 1995-12-14 | 1996-12-17 | Cvd, Incorporated | Susceptor for semiconductor wafer processing |
US6395363B1 (en) * | 1996-11-05 | 2002-05-28 | Applied Materials, Inc. | Sloped substrate support |
JP3887052B2 (ja) * | 1996-12-13 | 2007-02-28 | 東洋炭素株式会社 | 気相成長用サセプター |
US6368410B1 (en) * | 1999-06-28 | 2002-04-09 | General Electric Company | Semiconductor processing article |
WO2001013423A1 (fr) | 1999-08-10 | 2001-02-22 | Ibiden Co., Ltd. | Plaque ceramique pour dispositif de production de semi-conducteurs |
US6890383B2 (en) | 2001-05-31 | 2005-05-10 | Shin-Etsu Handotai Co., Ltd. | Method of manufacturing semiconductor wafer and susceptor used therefor |
JP4688363B2 (ja) * | 2001-07-31 | 2011-05-25 | 京セラ株式会社 | ウエハ加熱装置 |
DE10334940B4 (de) * | 2003-07-31 | 2007-08-23 | Infineon Technologies Ag | Trägereinrichtung |
JP5024382B2 (ja) | 2007-08-03 | 2012-09-12 | 信越半導体株式会社 | サセプタ及びシリコンエピタキシャルウェーハの製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE8008012U1 (de) * | 1980-09-11 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Halterung für Halbleiterscheiben | |
US3747282A (en) * | 1971-11-29 | 1973-07-24 | E Katzke | Apparatus for polishing wafers |
JPS54152465A (en) * | 1978-05-22 | 1979-11-30 | Nec Corp | Manufacture of epitaxial wafer |
US4692836A (en) * | 1983-10-31 | 1987-09-08 | Toshiba Kikai Kabushiki Kaisha | Electrostatic chucks |
JPS6099538A (ja) * | 1983-11-01 | 1985-06-03 | 横河・ヒュ−レット・パッカ−ド株式会社 | ピンチヤツク |
JPS61242994A (ja) * | 1985-04-22 | 1986-10-29 | Toshiba Corp | 縦型気相成長装置 |
JP2671914B2 (ja) * | 1986-01-30 | 1997-11-05 | 東芝セラミックス 株式会社 | サセプタ |
US4761134B1 (en) * | 1987-03-30 | 1993-11-16 | Silicon carbide diffusion furnace components with an impervious coating thereon | |
JPS6447019A (en) * | 1987-08-18 | 1989-02-21 | Denki Kagaku Kogyo Kk | Glassy carbon coated susceptor |
-
1988
- 1988-12-26 JP JP63326236A patent/JPH02174116A/ja active Pending
-
1989
- 1989-12-19 IT IT02273389A patent/IT1236887B/it active IP Right Grant
- 1989-12-21 FR FR8916966A patent/FR2640964B1/fr not_active Expired - Fee Related
- 1989-12-23 DE DE3942931A patent/DE3942931A1/de active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19547601A1 (de) * | 1995-12-20 | 1997-06-26 | Sel Alcatel Ag | Vorrichtung zum Sintern von porösen Schichten |
Also Published As
Publication number | Publication date |
---|---|
FR2640964A1 (ja) | 1990-06-29 |
FR2640964B1 (ja) | 1993-06-11 |
DE3942931A1 (de) | 1990-06-28 |
IT1236887B (it) | 1993-04-26 |
IT8922733A0 (it) | 1989-12-19 |
JPH02174116A (ja) | 1990-07-05 |
IT8922733A1 (it) | 1991-06-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |