DE3923619C2 - - Google Patents
Info
- Publication number
- DE3923619C2 DE3923619C2 DE3923619A DE3923619A DE3923619C2 DE 3923619 C2 DE3923619 C2 DE 3923619C2 DE 3923619 A DE3923619 A DE 3923619A DE 3923619 A DE3923619 A DE 3923619A DE 3923619 C2 DE3923619 C2 DE 3923619C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- resistance
- high resistance
- oxide
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000004767 nitrides Chemical class 0.000 claims description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000003068 static effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 187
- -1 phosphorus ions Chemical class 0.000 description 17
- 238000009792 diffusion process Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 2
- 229910005091 Si3N Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/903—FET configuration adapted for use as static memory cell
- Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63179887A JPH0727980B2 (ja) | 1988-07-19 | 1988-07-19 | 高抵抗層を有する半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3923619A1 DE3923619A1 (de) | 1990-01-25 |
| DE3923619C2 true DE3923619C2 (US20100223739A1-20100909-C00025.png) | 1993-04-08 |
Family
ID=16073634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3923619A Granted DE3923619A1 (de) | 1988-07-19 | 1989-07-17 | Halbleitereinrichtung und verfahren zu deren herstellung |
Country Status (4)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5461000A (en) * | 1994-07-05 | 1995-10-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing dielectric as load resistor in 4T SRAM |
| US5665629A (en) * | 1995-08-11 | 1997-09-09 | International Business Machines Corporation | Four transistor SRAM process |
| US5578854A (en) * | 1995-08-11 | 1996-11-26 | International Business Machines Corporation | Vertical load resistor SRAM cell |
| US5683930A (en) * | 1995-12-06 | 1997-11-04 | Micron Technology Inc. | SRAM cell employing substantially vertically elongated pull-up resistors and methods of making, and resistor constructions and methods of making |
| KR100204012B1 (ko) * | 1996-05-13 | 1999-06-15 | 김영환 | 고저항 부하형 스태틱램 셀 및 그 제조방법 |
| US5986922A (en) * | 1997-09-30 | 1999-11-16 | Alliance Semiconductor | Method of and apparatus for increasing load resistance within an SRAM array |
| US6303965B1 (en) * | 1999-08-20 | 2001-10-16 | Micron Technology, Inc. | Resistor constructions and methods of forming resistor constructions |
| EP3327756B1 (en) * | 2016-11-24 | 2019-11-06 | Melexis Technologies NV | Die edge integrity monitoring system and corresponding method |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4131902A (en) * | 1977-09-30 | 1978-12-26 | Westinghouse Electric Corp. | Novel bipolar transistor with a dual-dielectric tunnel emitter |
| JPS5640269A (en) * | 1979-09-11 | 1981-04-16 | Toshiba Corp | Preparation of semiconductor device |
| JPS6188548A (ja) * | 1984-10-08 | 1986-05-06 | Toshiba Corp | 半導体装置 |
| JPS61134055A (ja) * | 1984-12-04 | 1986-06-21 | Sony Corp | 半導体装置の製造方法 |
| US4711699A (en) * | 1985-04-25 | 1987-12-08 | Nec Corporation | Process of fabricating semiconductor device |
| US4641173A (en) * | 1985-11-20 | 1987-02-03 | Texas Instruments Incorporated | Integrated circuit load device |
| US4755480A (en) * | 1986-02-03 | 1988-07-05 | Intel Corporation | Method of making a silicon nitride resistor using plasma enhanced chemical vapor deposition |
| US4786612A (en) * | 1986-02-03 | 1988-11-22 | Intel Corporation | Plasma enhanced chemical vapor deposited vertical silicon nitride resistor |
| GB2186116B (en) * | 1986-02-03 | 1989-11-22 | Intel Corp | Plasma enhanced chemical vapor deposited vertical resistor |
| JPS62195179A (ja) * | 1986-02-21 | 1987-08-27 | Mitsubishi Electric Corp | 電界効果トランジスタ |
| US4823181A (en) * | 1986-05-09 | 1989-04-18 | Actel Corporation | Programmable low impedance anti-fuse element |
| US4888820A (en) * | 1988-12-06 | 1989-12-19 | Texas Instruments Incorporated | Stacked insulating film including yttrium oxide |
| US4931897A (en) * | 1989-08-07 | 1990-06-05 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor capacitive element |
-
1988
- 1988-07-19 JP JP63179887A patent/JPH0727980B2/ja not_active Expired - Lifetime
-
1989
- 1989-07-11 US US07/377,998 patent/US5093706A/en not_active Expired - Fee Related
- 1989-07-17 DE DE3923619A patent/DE3923619A1/de active Granted
- 1989-07-19 KR KR1019890010235A patent/KR930006275B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0727980B2 (ja) | 1995-03-29 |
| JPH0228970A (ja) | 1990-01-31 |
| KR900002321A (ko) | 1990-02-28 |
| KR930006275B1 (ko) | 1993-07-09 |
| DE3923619A1 (de) | 1990-01-25 |
| US5093706A (en) | 1992-03-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |