DE3885263T2 - Eingangsschutzschaltung für eine MOS-Halbleitervorrichtung. - Google Patents

Eingangsschutzschaltung für eine MOS-Halbleitervorrichtung.

Info

Publication number
DE3885263T2
DE3885263T2 DE88121907T DE3885263T DE3885263T2 DE 3885263 T2 DE3885263 T2 DE 3885263T2 DE 88121907 T DE88121907 T DE 88121907T DE 3885263 T DE3885263 T DE 3885263T DE 3885263 T2 DE3885263 T2 DE 3885263T2
Authority
DE
Germany
Prior art keywords
semiconductor device
protection circuit
input protection
mos semiconductor
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88121907T
Other languages
English (en)
Other versions
DE3885263D1 (de
Inventor
Shigeru C O Patent Divi Atsumi
Toru C O Patent Divisi Yoshida
Yasuo C O Patent Divi Kawahara
Fuminari C O Patent Div Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3885263D1 publication Critical patent/DE3885263D1/de
Publication of DE3885263T2 publication Critical patent/DE3885263T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
DE88121907T 1988-01-11 1988-12-30 Eingangsschutzschaltung für eine MOS-Halbleitervorrichtung. Expired - Fee Related DE3885263T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63003612A JPH07105446B2 (ja) 1988-01-11 1988-01-11 Ｍｏｓ型半導体装置の入力保護回路

Publications (2)

Publication Number Publication Date
DE3885263D1 DE3885263D1 (de) 1993-12-02
DE3885263T2 true DE3885263T2 (de) 1994-02-24

Family

ID=11562315

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88121907T Expired - Fee Related DE3885263T2 (de) 1988-01-11 1988-12-30 Eingangsschutzschaltung für eine MOS-Halbleitervorrichtung.

Country Status (5)

Country Link
US (1) US4924339A (de)
EP (1) EP0324185B1 (de)
JP (1) JPH07105446B2 (de)
KR (1) KR910009355B1 (de)
DE (1) DE3885263T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10201056A1 (de) * 2002-01-14 2003-07-31 Infineon Technologies Ag Halbleitereinrichtung mit einem bipolaren Schutztransistor

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2642543B1 (fr) * 1989-01-27 1991-04-05 Gemplus Card Int Dispositif de securite pour circuit integre
JPH061802B2 (ja) * 1989-03-14 1994-01-05 株式会社東芝 半導体装置
DE3943279C2 (de) * 1989-12-29 2001-07-12 Bosch Gmbh Robert Schaltung zum Ausgleichen sehr schneller Stromschwankungen
US5049764A (en) * 1990-01-25 1991-09-17 North American Philips Corporation, Signetics Div. Active bypass for inhibiting high-frequency supply voltage variations in integrated circuits
KR960002094B1 (ko) * 1990-11-30 1996-02-10 가부시키가이샤 도시바 입력보호회로를 갖춘 반도체장치
FR2676870B1 (fr) * 1991-05-24 1994-12-23 Sgs Thomson Microelectronics Structure de protection dans un circuit cmos contre le verrouillage.
JP2953192B2 (ja) * 1991-05-29 1999-09-27 日本電気株式会社 半導体集積回路
EP0517391A1 (de) * 1991-06-05 1992-12-09 STMicroelectronics, Inc. ESD-Schutzschaltung
US5229635A (en) * 1991-08-21 1993-07-20 Vlsi Technology, Inc. ESD protection circuit and method for power-down application
EP0535536B1 (de) * 1991-09-30 2001-12-05 Texas Instruments Incorporated Durch Verarmung kontrollierte Isolationsstufe
DE4135522C2 (de) * 1991-10-28 1996-11-21 Siemens Ag Schaltungsanordnung zum Schutz integrierter Schaltkreise
US5293057A (en) * 1992-08-14 1994-03-08 Micron Technology, Inc. Electrostatic discharge protection circuit for semiconductor device
JP2965840B2 (ja) * 1993-12-02 1999-10-18 株式会社東芝 トランジスタ回路
FR2715504B1 (fr) * 1994-01-25 1996-04-05 Sgs Thomson Microelectronics Circuit intégré incorporant une protection contre les décharges électrostatiques.
JPH07283405A (ja) * 1994-04-13 1995-10-27 Toshiba Corp 半導体装置の保護回路
JP3332123B2 (ja) * 1994-11-10 2002-10-07 株式会社東芝 入力保護回路及びこれを用いた半導体装置
JP2822915B2 (ja) * 1995-04-03 1998-11-11 日本電気株式会社 半導体装置
US5578860A (en) * 1995-05-01 1996-11-26 Motorola, Inc. Monolithic high frequency integrated circuit structure having a grounded source configuration
WO1997010615A1 (en) * 1995-09-11 1997-03-20 Analog Devices, Inc. (Adi) Electrostatic discharge protection network and method
JP3596830B2 (ja) * 1995-11-27 2004-12-02 株式会社ルネサステクノロジ 半導体装置の入力保護回路
US6091114A (en) * 1998-03-31 2000-07-18 Texas Instruments Incorporated Method and apparatus for protecting gate oxide from process-induced charging effects
JP2001308282A (ja) * 2000-04-19 2001-11-02 Nec Corp 半導体装置
KR20030078379A (ko) * 2002-03-29 2003-10-08 주식회사 하이닉스반도체 정전기 보호회로
US9490245B1 (en) * 2015-06-19 2016-11-08 Qualcomm Incorporated Circuit and layout for a high density antenna protection diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676742A (en) * 1971-05-24 1972-07-11 Signetics Corp Means including a spark gap for protecting an integrated circuit from electrical discharge
US3819952A (en) * 1973-01-29 1974-06-25 Mitsubishi Electric Corp Semiconductor device
US4066918A (en) * 1976-09-30 1978-01-03 Rca Corporation Protection circuitry for insulated-gate field-effect transistor (IGFET) circuits
JPS5369589A (en) * 1976-12-03 1978-06-21 Mitsubishi Electric Corp Insulating gate type field effect transistor with protective device
JPS5376679A (en) * 1976-12-17 1978-07-07 Nec Corp Semiconductor device
US4282556A (en) * 1979-05-21 1981-08-04 Rca Corporation Input protection device for insulated gate field effect transistor
JPS60120569A (ja) * 1983-12-02 1985-06-28 Toshiba Corp 入力回路
JPS60136241A (ja) * 1983-12-23 1985-07-19 Toshiba Corp ゲ−トアレイの入力回路
JPS60207383A (ja) * 1984-03-31 1985-10-18 Toshiba Corp 半導体装置
JPS6150358A (ja) * 1984-08-20 1986-03-12 Toshiba Corp 半導体集積回路
US4760433A (en) * 1986-01-31 1988-07-26 Harris Corporation ESD protection transistors
JPH0758734B2 (ja) * 1987-02-23 1995-06-21 株式会社東芝 絶縁ゲ−ト型セミカスタム集積回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10201056A1 (de) * 2002-01-14 2003-07-31 Infineon Technologies Ag Halbleitereinrichtung mit einem bipolaren Schutztransistor
DE10201056B4 (de) * 2002-01-14 2007-06-21 Infineon Technologies Ag Halbleitereinrichtung mit einem bipolaren Schutztransistor

Also Published As

Publication number Publication date
US4924339A (en) 1990-05-08
EP0324185A2 (de) 1989-07-19
EP0324185A3 (en) 1990-09-26
JPH01181565A (ja) 1989-07-19
JPH07105446B2 (ja) 1995-11-13
EP0324185B1 (de) 1993-10-27
DE3885263D1 (de) 1993-12-02
KR910009355B1 (ko) 1991-11-12
KR890012398A (ko) 1989-08-26

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee