DE69022945T2 - Halbleitereingangsschutzvorrichtung. - Google Patents

Halbleitereingangsschutzvorrichtung.

Info

Publication number
DE69022945T2
DE69022945T2 DE69022945T DE69022945T DE69022945T2 DE 69022945 T2 DE69022945 T2 DE 69022945T2 DE 69022945 T DE69022945 T DE 69022945T DE 69022945 T DE69022945 T DE 69022945T DE 69022945 T2 DE69022945 T2 DE 69022945T2
Authority
DE
Germany
Prior art keywords
protection device
input protection
semiconductor input
semiconductor
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69022945T
Other languages
English (en)
Other versions
DE69022945D1 (de
Inventor
Ryuji Yamamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69022945D1 publication Critical patent/DE69022945D1/de
Publication of DE69022945T2 publication Critical patent/DE69022945T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69022945T 1989-10-12 1990-10-12 Halbleitereingangsschutzvorrichtung. Expired - Fee Related DE69022945T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26694389 1989-10-12

Publications (2)

Publication Number Publication Date
DE69022945D1 DE69022945D1 (de) 1995-11-16
DE69022945T2 true DE69022945T2 (de) 1996-04-25

Family

ID=17437840

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69022945T Expired - Fee Related DE69022945T2 (de) 1989-10-12 1990-10-12 Halbleitereingangsschutzvorrichtung.

Country Status (4)

Country Link
US (1) US5027252A (de)
EP (1) EP0422676B1 (de)
JP (1) JP2626229B2 (de)
DE (1) DE69022945T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5436183A (en) * 1990-04-17 1995-07-25 National Semiconductor Corporation Electrostatic discharge protection transistor element fabrication process
US5844760A (en) * 1991-03-22 1998-12-01 Fuji Electric Co., Ltd. Insulated-gate controlled semiconductor device
JP2953192B2 (ja) * 1991-05-29 1999-09-27 日本電気株式会社 半導体集積回路
KR950007572B1 (ko) * 1992-03-31 1995-07-12 삼성전자주식회사 Esd 보호장치
US5371395A (en) * 1992-05-06 1994-12-06 Xerox Corporation High voltage input pad protection circuitry
US5428498A (en) * 1992-09-28 1995-06-27 Xerox Corporation Office environment level electrostatic discharge protection
JPH06232354A (ja) * 1992-12-22 1994-08-19 Internatl Business Mach Corp <Ibm> 静電気保護デバイス
ATE164702T1 (de) * 1993-05-04 1998-04-15 Siemens Ag Integrierte halbleiterschaltung mit einem schutzmittel
US5455444A (en) * 1994-04-22 1995-10-03 United Microelectronics Corporation Double polysilicon electrostatic discharge protection device for SRAM and DRAM memory devices
US5538907A (en) * 1994-05-11 1996-07-23 Lsi Logic Corporation Method for forming a CMOS integrated circuit with electrostatic discharge protection
JPH08316426A (ja) * 1995-05-16 1996-11-29 Nittetsu Semiconductor Kk Ｍｏｓ型半導体装置およびその製造方法
WO1997010615A1 (en) * 1995-09-11 1997-03-20 Analog Devices, Inc. (Adi) Electrostatic discharge protection network and method
US5777368A (en) * 1996-05-13 1998-07-07 Winbond Electronics Corp. Electrostatic discharge protection device and its method of fabrication
US6265756B1 (en) 1999-04-19 2001-07-24 Triquint Semiconductor, Inc. Electrostatic discharge protection device
US6285062B1 (en) * 1999-05-12 2001-09-04 Micron Technology, Inc. Adjustable high-trigger-voltage electrostatic discharge protection device
US6310380B1 (en) * 2000-03-06 2001-10-30 Chartered Semiconductor Manufacturing, Inc. Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers
JP3761162B2 (ja) * 2002-03-27 2006-03-29 ローム株式会社 バイポーラトランジスタ及びこれを用いた半導体装置
CN104659015B (zh) * 2015-02-02 2017-02-22 矽力杰半导体技术(杭州)有限公司 一种具有重布线层的半导体结构及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS577969A (en) * 1980-06-18 1982-01-16 Toshiba Corp Semiconductor integrated circuit
US4609931A (en) * 1981-07-17 1986-09-02 Tokyo Shibaura Denki Kabushiki Kaisha Input protection MOS semiconductor device with zener breakdown mechanism
JPS5869124A (ja) * 1981-10-20 1983-04-25 Toshiba Corp 半導体集積回路
US4527213A (en) * 1981-11-27 1985-07-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with circuits for protecting an input section against an external surge
US4605980A (en) * 1984-03-02 1986-08-12 Zilog, Inc. Integrated circuit high voltage protection
JPS61237472A (ja) * 1985-04-15 1986-10-22 Nec Corp 半導体装置
JPH065749B2 (ja) * 1986-05-22 1994-01-19 日本電気株式会社 半導体装置
JP2821128B2 (ja) * 1988-01-29 1998-11-05 日本電気株式会社 半導体入力保護装置

Also Published As

Publication number Publication date
EP0422676A3 (en) 1991-08-07
JP2626229B2 (ja) 1997-07-02
EP0422676A2 (de) 1991-04-17
JPH03204974A (ja) 1991-09-06
US5027252A (en) 1991-06-25
EP0422676B1 (de) 1995-10-11
DE69022945D1 (de) 1995-11-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee