DE3884921D1 - Verfahren zur Temperaturkontrolle einer Halbleiterscheibe auf einer Einspannvorrichtung. - Google Patents

Verfahren zur Temperaturkontrolle einer Halbleiterscheibe auf einer Einspannvorrichtung.

Info

Publication number
DE3884921D1
DE3884921D1 DE88311704T DE3884921T DE3884921D1 DE 3884921 D1 DE3884921 D1 DE 3884921D1 DE 88311704 T DE88311704 T DE 88311704T DE 3884921 T DE3884921 T DE 3884921T DE 3884921 D1 DE3884921 D1 DE 3884921D1
Authority
DE
Germany
Prior art keywords
temperature control
semiconductor wafer
clamping device
wafer
clamping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88311704T
Other languages
English (en)
Other versions
DE3884921T2 (de
Inventor
Hidehiko Fujioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3884921D1 publication Critical patent/DE3884921D1/de
Application granted granted Critical
Publication of DE3884921T2 publication Critical patent/DE3884921T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G03F7/70708—Chucks, e.g. chucking or un-chucking operations or structural details being electrostatic; Electrostatically deformable vacuum chucks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE88311704T 1987-12-10 1988-12-09 Verfahren zur Temperaturkontrolle einer Halbleiterscheibe auf einer Einspannvorrichtung. Expired - Fee Related DE3884921T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62310826A JPH01152639A (ja) 1987-12-10 1987-12-10 吸着保持装置

Publications (2)

Publication Number Publication Date
DE3884921D1 true DE3884921D1 (de) 1993-11-18
DE3884921T2 DE3884921T2 (de) 1994-02-24

Family

ID=18009874

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88311704T Expired - Fee Related DE3884921T2 (de) 1987-12-10 1988-12-09 Verfahren zur Temperaturkontrolle einer Halbleiterscheibe auf einer Einspannvorrichtung.

Country Status (4)

Country Link
US (1) US5134436A (de)
EP (1) EP0320297B1 (de)
JP (1) JPH01152639A (de)
DE (1) DE3884921T2 (de)

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JP2680338B2 (ja) * 1988-03-31 1997-11-19 株式会社東芝 静電チャック装置
JP2731950B2 (ja) * 1989-07-13 1998-03-25 キヤノン株式会社 露光方法
US5231291A (en) * 1989-08-01 1993-07-27 Canon Kabushiki Kaisha Wafer table and exposure apparatus with the same
JP2737010B2 (ja) * 1989-08-01 1998-04-08 キヤノン株式会社 露光装置
EP0422814B1 (de) * 1989-10-02 1999-03-17 Canon Kabushiki Kaisha Belichtungsvorrichtung
US5227000A (en) * 1990-04-09 1993-07-13 Nippon Scientific Co., Ltd. Plasma etching apparatus with accurate temperature and voltage level control on device under test
DE69130205T2 (de) * 1990-12-25 1999-03-25 Ngk Insulators Ltd Heizungsapparat für eine Halbleiterscheibe und Verfahren zum Herstellen desselben
JP2864060B2 (ja) * 1991-09-04 1999-03-03 キヤノン株式会社 縮小投影型露光装置及び方法
US5511799A (en) * 1993-06-07 1996-04-30 Applied Materials, Inc. Sealing device useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential
US5593800A (en) * 1994-01-06 1997-01-14 Canon Kabushiki Kaisha Mask manufacturing method and apparatus and device manufacturing method using a mask manufactured by the method or apparatus
US5883778A (en) * 1994-02-28 1999-03-16 Applied Materials, Inc. Electrostatic chuck with fluid flow regulator
JPH0926176A (ja) * 1995-07-07 1997-01-28 Canon Inc 処理システムとこれを用いたデバイス生産方法
US5667622A (en) * 1995-08-25 1997-09-16 Siemens Aktiengesellschaft In-situ wafer temperature control apparatus for single wafer tools
WO1997014077A1 (en) * 1995-10-12 1997-04-17 Megapanel Corporation Magnification control and thermal substrate chuck for photolithography
US6645701B1 (en) 1995-11-22 2003-11-11 Nikon Corporation Exposure method and exposure apparatus
US5740016A (en) * 1996-03-29 1998-04-14 Lam Research Corporation Solid state temperature controlled substrate holder
US5761023A (en) * 1996-04-25 1998-06-02 Applied Materials, Inc. Substrate support with pressure zones having reduced contact area and temperature feedback
US5802856A (en) * 1996-07-31 1998-09-08 Stanford University Multizone bake/chill thermal cycling module
US5835334A (en) * 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
KR100246963B1 (ko) * 1996-11-22 2000-03-15 윤종용 반도체 제조장치의 웨이퍼 홀더용 스테이지
EP1016337B1 (de) * 1997-04-04 2008-05-21 Delta Design, Inc. Temperaturregelvorrichtung fuer ein elektronisches bauelement
US5978202A (en) * 1997-06-27 1999-11-02 Applied Materials, Inc. Electrostatic chuck having a thermal transfer regulator pad
KR100274595B1 (ko) * 1997-10-06 2000-12-15 윤종용 반도체 프로브 스테이션, 이의 냉각장치, 이의 냉각방법 그리고 이를 이용한 이디에스 방법
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
US5996353A (en) * 1998-05-21 1999-12-07 Applied Materials, Inc. Semiconductor processing system with a thermoelectric cooling/heating device
JP2000277237A (ja) * 1999-03-24 2000-10-06 Komatsu Ltd 基板温度制御プレート及びそれを備える基板温度制御装置
US6592673B2 (en) * 1999-05-27 2003-07-15 Applied Materials, Inc. Apparatus and method for detecting a presence or position of a substrate
AU4653999A (en) * 1999-07-16 2001-02-05 Nikon Corporation Exposure method and system
WO2001011664A1 (fr) * 1999-08-09 2001-02-15 Ibiden Co., Ltd. Recipient de support et dispositif semiconducteur de fabrication/inspection
TWI238292B (en) * 2000-02-10 2005-08-21 Asml Netherlands Bv Lithographic projection apparatus having a temperature controlled heat shield
JP3870002B2 (ja) * 2000-04-07 2007-01-17 キヤノン株式会社 露光装置
JP2001297971A (ja) * 2000-04-14 2001-10-26 Ulvac Japan Ltd 露光装置
JP4458447B2 (ja) * 2000-11-10 2010-04-28 株式会社アドバンテスト 電子部品試験用保持装置、電子部品試験装置および電子部品試験方法
US6508062B2 (en) 2001-01-31 2003-01-21 Applied Materials, Inc. Thermal exchanger for a wafer chuck
JP2004158510A (ja) * 2002-11-01 2004-06-03 Canon Inc デバイス製造装置
JP4307130B2 (ja) * 2003-04-08 2009-08-05 キヤノン株式会社 露光装置
SG109000A1 (en) * 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP4241295B2 (ja) * 2003-09-26 2009-03-18 キヤノン株式会社 ステージ装置
JP4666908B2 (ja) * 2003-12-12 2011-04-06 キヤノン株式会社 露光装置、計測方法及びデバイス製造方法
KR101554772B1 (ko) 2004-02-04 2015-09-22 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4256893B2 (ja) * 2004-03-30 2009-04-22 パイオニア株式会社 露光装置
JP2005353762A (ja) * 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 半導体製造装置及びパターン形成方法
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196768B2 (en) * 2004-10-26 2007-03-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060163490A1 (en) * 2005-01-21 2006-07-27 Advanced Ion Beam Technology Inc. Ion implantation cooling system
US20060258128A1 (en) * 2005-03-09 2006-11-16 Peter Nunan Methods and apparatus for enabling multiple process steps on a single substrate
US20070000441A1 (en) * 2005-07-01 2007-01-04 Applied Materials, Inc. Scalable uniform thermal plate
US8068208B2 (en) * 2006-12-01 2011-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving immersion scanner overlay performance
JP2009021555A (ja) * 2007-06-12 2009-01-29 Canon Inc 露光装置
US20090153812A1 (en) * 2007-12-17 2009-06-18 Canon Kabushiki Kaisha Positioning apparatus, exposure apparatus, and device manufacturing method
JP5355043B2 (ja) * 2008-11-10 2013-11-27 キヤノン株式会社 露光装置およびデバイス製造方法
DE102009054869B4 (de) * 2009-04-09 2022-02-17 Carl Zeiss Smt Gmbh Spiegel zur Führung eines Strahlungsbündels, Vorrichtungen mit einem derartigen Spiegel sowie Verfahren zur Herstellung mikro- oder nanostrukturierter Bauelemente
KR101866622B1 (ko) 2010-12-20 2018-06-11 에베 그룹 에. 탈너 게엠베하 웨이퍼의 장착을 위한 수용 수단
US9494875B2 (en) 2011-10-06 2016-11-15 Asml Netherlands B.V. Chuck, a chuck control system, a lithography apparatus and a method of using a chuck
US9091943B2 (en) * 2012-12-28 2015-07-28 Globalfoundries Inc. Asymmetric reticle heating of multilayer reticles eliminated by dummy exposures and related methods
US9703212B2 (en) * 2015-03-12 2017-07-11 Kabushiki Kaisha Toshiba Exposure apparatus
JP6730878B2 (ja) * 2016-08-10 2020-07-29 株式会社日本マイクロニクス 製造装置、及び製造方法
DE102018117393A1 (de) 2018-07-18 2020-01-23 Infineon Technologies Ag Auflagetisch, auflagetischbaugruppe,verarbeitungsanordnung und verfahren dafür

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JPS57136325A (en) * 1981-02-18 1982-08-23 Toshiba Corp Transfer device for pattern
JPS57169244A (en) * 1981-04-13 1982-10-18 Canon Inc Temperature controller for mask and wafer
JPS58207634A (ja) * 1982-05-28 1983-12-03 Seiko Epson Corp 目合わせ装置

Also Published As

Publication number Publication date
US5134436A (en) 1992-07-28
EP0320297A3 (en) 1990-01-24
EP0320297B1 (de) 1993-10-13
DE3884921T2 (de) 1994-02-24
JPH01152639A (ja) 1989-06-15
EP0320297A2 (de) 1989-06-14

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8339 Ceased/non-payment of the annual fee