WO2001011664A1 - Recipient de support et dispositif semiconducteur de fabrication/inspection - Google Patents

Recipient de support et dispositif semiconducteur de fabrication/inspection Download PDF

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Publication number
WO2001011664A1
WO2001011664A1 PCT/JP2000/005045 JP0005045W WO0111664A1 WO 2001011664 A1 WO2001011664 A1 WO 2001011664A1 JP 0005045 W JP0005045 W JP 0005045W WO 0111664 A1 WO0111664 A1 WO 0111664A1
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WO
WIPO (PCT)
Prior art keywords
ceramic substrate
support container
outer frame
semiconductor manufacturing
frame portion
Prior art date
Application number
PCT/JP2000/005045
Other languages
English (en)
Japanese (ja)
Inventor
Masakazu Furukawa
Mitsuteru Tomita
Yasuji Hiramatsu
Yasutaka Ito
Original Assignee
Ibiden Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP22533599A external-priority patent/JP4330717B2/ja
Priority claimed from JP2000170452A external-priority patent/JP2001345371A/ja
Application filed by Ibiden Co., Ltd. filed Critical Ibiden Co., Ltd.
Publication of WO2001011664A1 publication Critical patent/WO2001011664A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Definitions

  • the present invention mainly comprises a support container constituting a device for manufacturing or inspecting a semiconductor, such as a hot plate (ceramic heater), an electrostatic chuck, and a vacuum probe, and the support container and a ceramic substrate.
  • the present invention relates to a semiconductor manufacturing / inspection apparatus, and in particular, to a supporting container and a semiconductor manufacturing / inspection apparatus which have a high cooling rate and can be used for a ceramic substrate having a larger size.
  • a heating device called a hot plate In a semiconductor manufacturing process, for example, when heating and drying a silicon wafer that has undergone a photosensitive resin coating step, a heating device called a hot plate is usually used.
  • the apparatus disclosed in the publication includes a hot plate using a ceramic substrate made of aluminum nitride as an electric heating member, and a resistance ripening member provided on the ceramic substrate.
  • the resistance heating element is formed on the bottom surface of the ceramic substrate constituting the hot plate. Both ends of the resistance heating element protruding to the side of the plate are connected to the power supply via wiring.
  • a silicon wafer which is a heat substance, is placed on the heating surface side of the hot plate, and the resistance heating element is energized in this state, so that the silicon wafer is heated to several hundreds.
  • Japanese Patent Publication No. Hei 8-82246 describes a technique for attaching a cooling fin-type cooling body to a hot plate.
  • this cooling body although the hot plate could be locally cooled, the whole could not be cooled uniformly.
  • Such a hot plate is supported and used by a substantially cylindrical container called a support container.
  • a control device containing a control device, a power supply and the like is present below the support container, and the above-mentioned wiring and the like are connected to the control device in the control device.
  • a heat shield plate is provided between the control device and the ceramic substrate, and a radiation fin is interposed between the control device and the hot plate.
  • the present invention has been made in order to solve the above-mentioned problems.
  • the first group of the present invention uses a simple structure, is low-cost, and can shorten the entire hot plate in a short time. It is an object of the present invention to provide a semiconductor manufacturing / inspection device capable of uniformly cooling between the devices.
  • Another object of the present invention is to provide a support container capable of improving the cooling rate of a ceramic substrate having a resistance heating element, and a semiconductor manufacturing / inspection apparatus using the support container.
  • the third group of the present invention can reduce the size of the device by extending a cylindrical portion having an outer diameter smaller than the outer frame of the support container. It is an object of the present invention to provide a support container capable of directly using the entire apparatus including a control device provided therein, and a semiconductor manufacturing / inspection apparatus using the support container.
  • a first group of semiconductor manufacturing / inspection apparatuses of the present invention are semiconductor manufacturing / inspection apparatuses in which a ceramic substrate having a resistance heating element is disposed in an opening of a bottomed supporting container, Is characterized in that a coolant supply pipe is formed to communicate the inside and the outside of the coolant supply pipe.
  • the support container is provided with a refrigerant supply pipe for communicating the inside and the outside thereof, by flowing a fluid from the refrigerant supply pipe into the support container, The fluid can be uniformly sprayed on the entire ceramic substrate. Therefore, it is possible to forcibly cool the ceramic substrate, and it is possible to cool the ceramic substrate in a shorter time as compared with cooling. That is, the entire ceramic substrate can be uniformly cooled in a short time. Further, since a refrigerant supply pipe having a simple structure can be used, cooling can be performed at low cost.
  • the coolant supply pipe be formed at the bottom of the support container. This is because the fluid circulated from the refrigerant supply pipe can be blown perpendicular to the ceramic substrate surface.
  • a heat insulating ring is provided between the upper edge of the opening of the support container and the outer peripheral portion of the bottom surface of the ceramic substrate. This is because a hermetically closed space is formed between the support container and the ceramic substrate, so that the fluid circulated in the support container can be prevented from leaking outside. It is desirable that a sealing member is provided at the wiring lead-out portion of the support container. This is because leakage of the fluid to the outside of the device through the portion is prevented, and a higher sealing property can be ensured by the space formed between the support container and the ceramic substrate.
  • the support container of the first invention of the second group is a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-like body connected and fixed to the outer frame portion. A plurality of openings are formed in the plate-shaped body. Further, a semiconductor manufacturing / inspection apparatus using the same also belongs to the first invention of the second group.
  • the support container of the second invention of the second group is a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-like body connected and fixed to the outer frame portion.
  • the relationship between the weight M (kg) of the ceramic substrate and the diameter L (mm) of the ceramic substrate is M ⁇ L / 200.
  • a semiconductor manufacturing and inspection apparatus using the same also belongs to the second group of the second invention.
  • a plurality of openings are formed in the plate-shaped body functioning as a bottom plate or a heat shield plate, thereby reducing the heat capacity of the plate-shaped body and discharging and cooling the cooling medium. This makes it possible to improve the cooling rate.
  • the relationship between the projected area S A of the plate-shaped body and the total area S of the openings provided in the plate-shaped body is preferably 0.33 ⁇ SZSA, and more preferably 0.1 ⁇ SZSA.
  • the ratio of the total area of the openings By setting the ratio of the total area of the openings to 3% or more, the heat capacity of the plate-shaped body can be reduced, and the cooling medium that has exchanged heat with the ceramic substrate can be easily discharged, thereby improving the cooling rate. Because you can.
  • the cooling medium is supplied from a cooling medium supply port provided in the plate.
  • the cooling medium may be a liquid or a gas, but is preferably a gas from the viewpoint of preventing a short circuit of the resistance heating element.
  • the gas include an inert gas such as nitrogen, argon, helium, and chlorofluorocarbon, and air.
  • the liquid include water and ethylene glycol.
  • the weight M (kg) of the support container and the diameter L (mm) of the ceramic substrate satisfy the relational expression of 0 such that The weight M of the supporting container and the diameter L of the ceramic substrate are set.
  • the reason why both are set in this way is that the lighter the weight of the supporting container, the smaller the heat capacity, the faster the cooling, and the lower the radiant heat from the supporting container.
  • the weight refers to the total weight, and refers to the weight of the substantially cylindrical outer frame portion and the plate-like body connected and fixed to the outer frame portion.
  • the cooling medium supply port and the heat insulating ring are formed. If this is the case, include the weight of the cooling medium supply port and the heat insulating material. The smaller the total weight, the smaller the heat capacity and the easier it is to cool, and the cooling of the ceramic substrate is not hindered by the radiation ripening from the support container itself.
  • the upper limit of the weight M of the supporting container is set to be a function of the diameter of the ceramic substrate.
  • a method of reducing the weight of the support container a method of providing an opening in the plate-like body or setting the thickness of each member constituting the support container to 0.1 to 5 mm can be adopted. If the thickness of the supporting container exceeds 5 mm, the ripening capacity becomes too large.
  • the weight M (kg) of the support container is The weight M of the supporting container and the diameter L of the ceramic substrate are set so as to satisfy the relational expression of M ⁇ LZ200 between the diameter L (mm) of the ceramic substrate and the diameter L (mm) of the ceramic substrate.
  • a third group of the support containers of the present invention is a support container for supporting a stage substrate, wherein the support container has a substantially cylindrical outer frame portion and a cylinder having a smaller diameter than an outer frame portion extending to the bottom of the outer frame portion.
  • a third group of semiconductor manufacturing / inspection apparatuses of the present invention include a disc-shaped ceramic substrate provided with a conductor layer on the surface or inside thereof, a substantially cylindrical outer frame portion for receiving the ceramic substrate, and the outside. And a support container including a cylindrical portion having a smaller diameter than the outer frame portion extended at the bottom of the frame portion.
  • a heat dissipating fin is formed on the cylindrical portion having a smaller diameter than the outer frame portion of the third group of support containers of the present invention. This is because the radiation fins can directly release the heat that adversely affects the device to the outside.
  • the radiating fins may be formed directly on the cylindrical part with a smaller diameter than the outer frame part. Alternatively, it may be formed by fitting a small-diameter cylindrical portion to the cylinder on which the radiation fins are formed. In the former case, the heat transfer property is excellent, and in the latter case, the outer frame in which the stage plate (ceramic substrate, aluminum plate, etc.) is incorporated can be easily replaced from the apparatus body.
  • the cylindrical portion having a smaller diameter than the outer frame portion is detachably extended from the outer frame portion.
  • FIG. 1 is a cross-sectional view schematically showing a hot plate as an example of a first group of semiconductor manufacturing / inspection apparatuses of the present invention.
  • FIG. 2 is a partially enlarged sectional view of the hot plate shown in FIG.
  • FIG. 3 is a cross-sectional view schematically showing another embodiment of a hot plate, which is an example of a first group of semiconductor manufacturing and inspection apparatuses of the present invention.
  • FIGS. 4A and 4B are plan views schematically showing still another embodiment of a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the first group of the present invention.
  • FIG. 5 (a) is a longitudinal sectional view schematically showing a ceramic substrate constituting a first group of electrostatic chucks according to the present invention
  • FIG. 5 (b) is an A-type ceramic substrate shown in FIG. 5 (a).
  • FIG. 3 is a sectional view taken along line A.
  • FIG. 6 is a horizontal sectional view schematically showing another example of the ceramic substrate constituting the first group of the electrostatic chuck according to the present invention.
  • FIG. 7 is a horizontal sectional view schematically showing still another example of the ceramic substrate constituting the first group of the electrostatic chuck according to the present invention.
  • FIG. 8 is a cross-sectional view schematically showing a ceramic substrate constituting a wafer prober which is an example of a first group of semiconductor manufacturing / inspection apparatuses of the present invention.
  • FIG. 9 is a plan view schematically showing the ceramic substrate shown in FIG.
  • FIG. 10 is a cross-sectional view taken along line AA of the ceramic substrate shown in FIG.
  • FIG. 11 (a) is a cross-sectional view schematically showing a hot plate which is an example of a semiconductor manufacturing / inspection apparatus of the second group of the present invention, and (b) is a heat shield member shown in (a). It is a perspective view which shows typically the bottom part.
  • FIG. 12 is a plan view of the hot plate shown in FIG.
  • FIG. 13A is a cross-sectional view schematically showing another embodiment of a hot plate which is an example of the semiconductor manufacturing / inspection apparatus according to the second group of the present invention, wherein the heat shield plate shown in FIG. It is a perspective view which shows typically.
  • FIG. 14 is a cross-sectional view schematically showing a hot plate which is an example of a semiconductor manufacturing / inspection apparatus of the third group of the present invention.
  • FIG. 15 is a plan view of the hot plate shown in FIG.
  • FIG. 16 is a cross-sectional view schematically showing another embodiment of a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the third group of the present invention.
  • FIGS. 17 (a) to 17 (d) are cross-sectional views schematically showing a part of a method for manufacturing a hot plate which is an example of a second group of semiconductor manufacturing / inspection apparatuses of the present invention. Explanation of reference numerals
  • a first group of semiconductor manufacturing / inspection apparatuses of the present invention is a semiconductor manufacturing / inspection apparatus in which a ceramic substrate having a resistance ripening body is arranged in an opening of a bottomed support container, It is characterized in that the container is formed with a refrigerant supply pipe for communicating the inside and the outside thereof.
  • a hot plate 1 which is a specific example of the semiconductor manufacturing / inspection apparatus shown in FIGS. 1 and 2 includes a support container 2 and a ceramic substrate 3 as main components.
  • the support container 2 is a bottomed metal member (here, an aluminum member), A circular opening 4 is formed in the upper part.
  • a pin insertion sleeve 5 through which a lifter pin (not shown) is inserted is provided at three locations in the center of the bottom 2 a of the support container 2. These lifter pins raise and lower the silicon wafer W while supporting the silicon wafer W at three points.
  • a lead wire drawing hole 7 for inserting a lead wire 6 for supplying a current to the ceramic substrate 3 is formed in the outer peripheral portion of the bottom 2a.
  • the silicon wafer W to which the photosensitive resin has been applied is 200 to 300. Used as a low-temperature hot plate for drying at C.
  • the ceramic substrate 3 having the resistance heating element 10 provided on the bottom surface 3b is placed in the opening 4 of the support container 2 via a heat insulating ring 14 to be described later.
  • a substantially closed space S 1 is formed between the inner surface of the support container 2 and the bottom surface of the ceramic substrate 3.
  • the ceramic substrate 3 has a circular shape and is designed to have a diameter slightly smaller than the outer dimensions of the support container 2.
  • the resistance heating element 10 is formed concentrically or spirally on the bottom surface 3 b of the ceramic substrate 3.
  • through holes 11 are formed at three places corresponding to the respective pin insertion sleeves.
  • the material of the ceramic substrate 3 constituting the first group of semiconductor manufacturing / inspection apparatuses of the present invention is not particularly limited, and examples thereof include a nitride ceramic, a carbide ceramic, and an oxide ceramic.
  • nitride ceramic examples include metal nitride ceramics such as aluminum nitride, silicon nitride, and boron nitride.
  • carbide ceramic examples include metal carbide ceramics, for example, silicon carbide, zirconium carbide, tantalum carbide, and the like.
  • oxide ceramic examples include metal oxide ceramics, for example, alumina, zirconia, cordierite, mullite, and the like.
  • nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Aluminum nitride is the most preferable among the nitride ceramics. This is because the thermal conductivity is as high as 18 OW / m ⁇ K.
  • the ceramic material may contain a sintering aid.
  • the sintering aid include alkali metal oxides, alkaline earth metal oxides, and rare earth oxides.
  • C a O, Y 2 0 3, N a 2 0, L i 2 0, R b 2 0 is preferable.
  • the content of these is preferably 0.1 to 10% by weight. Further, it may contain alumina.
  • the resistance heating element 10 is formed by baking a conductive paste on a ceramic substrate 3 which is a sintered body.
  • the conductor base those containing metal particles, metal oxides, resins, solvents and the like are generally used.
  • Suitable metal particles used for the conductor paste include, for example, gold, silver, platinum, palladium, bell, tungsten, nickel and the like. This is because these metals are relatively difficult to oxidize even when exposed to high temperatures, and have sufficient resistance to generate heat when energized.
  • Suitable metal oxides used for the conductor paste include, for example, lead oxide, zinc oxide, silica, boron oxide, alumina, yttria, titania and the like.
  • an external terminal 12 made of a conductive material is soldered to an end 10 a of the resistance heating element 10.
  • electrical continuity between the external terminal 12 and the resistance heating element 10 is achieved.
  • a socket 6 a at the end of the lead wire 6 is fitted to the end of the external terminal 12. Therefore, current is supplied to the resistance heating element 10 via the lead wire 6 and the external terminal 12, and as a result, the temperature of the resistance heating element 10 increases, and the entire ceramic substrate 3 is heated.
  • a plurality of screw holes 13 are provided at equal intervals in the upper edge of the opening 4 of the support container 2.
  • a maturing ring 14 is provided on the upper edge of the opening 4.
  • the heat insulating ring 14 has an annular shape, and has a size substantially equal to the size of the opening 4.
  • an elastic material such as resin or rubber is preferable.
  • a plurality of screw holes 15 are provided at positions corresponding to the screw holes 13 in the heat insulating ring 14.
  • a support step 16 for horizontally supporting the outer peripheral portion of the bottom surface of the ceramic substrate 3 is provided at all stations. And is formed over a long distance. When the ceramic substrate 3 is supported on the supporting step 16, the height of the upper end surface of the heat insulating ring 14 and the height of the heating surface of the ceramic substrate 3 are substantially the same.
  • the heat insulating ring 14 in the present embodiment seals a gap formed between the upper edge of the opening 4 of the support container 2 and the outer peripheral portion of the bottom surface of the ceramic substrate 3, thereby preventing air from flowing through the gap. Have a role to do.
  • a locking ring 21 is fixed to a heating surface of the ripening ring 14 with a screw 25.
  • the locking ring 21 has an annular main body 22, a plurality of screw holes 23, and a plurality of locking pieces 24.
  • the ceramic substrate 3 set on the supporting step 16 is pressed by the respective locking pieces 24 from the plate thickness direction, so that the ceramic substrate 3 is clamped and fixed to the heat insulating ring 14.
  • a coolant supply pipe 17 and a coolant discharge pipe 18 are provided at the bottom 2 a of the support container 2 using bolts or the like. Two refrigerant supply pipes 17 and two refrigerant discharge pipes 18 are formed. In the present embodiment, the coolant supply pipes 17 are juxtaposed substantially at the center of the bottom 2a. Further, each refrigerant discharge pipe 18 is arranged at a position separated from the refrigerant supply pipe 17 with each refrigerant supply pipe 17 interposed therebetween. That is, each refrigerant discharge pipe 18 is disposed at a position separated from each refrigerant supply pipe 17 in both end directions of the bottom 2a.
  • the refrigerant supply pipe 17 and the refrigerant discharge pipe 18 have flow paths that open on both the inner end face and the outer end face. For this reason, the inside and outside of the support container 2 are communicated through the flow path.
  • a female screw groove is formed on the inner peripheral surface of the opening on the outer end face side of the refrigerant supply pipe 17, and one end of a fluid supply pipe (not shown) is detachable from the opening. Since the other end of this pipe is connected to a gas pressure pump, air as a cooling medium is supplied through the pipe.
  • a female screw groove is also formed on the inner peripheral surface of the opening on the outer end surface side of the refrigerant discharge pipe 18. The air in the support container 2 is discharged outside through this pipe.
  • the other end of the above-mentioned pipe is opened at a place somewhat away from the apparatus.
  • a seal packing 8 is attached to the above-mentioned lead wire outlet hole 7.
  • This seal packing 8 has an annular shape and is made of rubber or the like. It is formed of a suitable elastic body.
  • Each lead wire 6 is inserted into the through hole of the seal packing 8 and then drawn out of the support container 2.
  • the seal packing 8 in the present embodiment has a role of sealing the gap formed between each lead wire 6 and the lead wire drawing hole 7 to prevent air from flowing through the gap. .
  • the silicon wafer W coated with the photosensitive resin is placed on the hot plate 3, and the resistance heating element 10 is energized in this state. Then, the temperature of the silicon wafer W gradually increases due to the contact with the heated ceramic substrate 3. When the photosensitive resin is sufficiently dried by heating for a predetermined time, the power supply to the resistance pattern 10 is stopped.
  • the gas pressure pump is driven to supply cooling air to the refrigerant supply pipe 17 side, and the air is introduced into the closed space S1 via the refrigerant supply pipe 17.
  • the air discharged through the refrigerant supply pipe 17 flows toward the refrigerant discharge pipe 18 while contacting the entire bottom surface side of the ceramic substrate 3 in the closed space S1.
  • the heat removes the heat of the ceramic substrate 3 substantially uniformly as a whole.
  • the air whose temperature has risen due to the removal of heat flows out of the space again through the refrigerant discharge pipe 18 and is discharged into another space free from contamination. Note that a series of air flows is schematically indicated by thick arrows in FIG. Then, when the ceramic substrate 3 is cooled down to a somewhat low temperature, the silicon wafer W is removed from the ceramic substrate 3.
  • the first group of semiconductor manufacturing inspection apparatuses according to the present invention have been described using a hot plate as a specific example.
  • the first group of semiconductor manufacturing inspection apparatuses according to the present invention are provided inside or at the bottom of a ceramic substrate.
  • an electrostatic chuck or a wafer probe may be used.
  • each refrigerant supply pipe 17 is provided at the bottom of the support container 2.
  • the air circulated from the refrigerant supply pipe 17 into the support container 2 can be blown perpendicularly to the bottom surface of the ceramic substrate 3. Therefore, the ceramic substrate 3 can be cooled in a relatively short time.
  • the substantially closed space S1 is formed between the support container 2 and the ceramic substrate 3 as described above.
  • protrusions such as the external terminals 12 are present on the bottom surface side of the ceramic substrate 3, they are arranged in a space S 1 formed between the support container 2 and the ceramic substrate 3. That is, the projection is not exposed to the outside of the device, and is in a so-called protected state. Therefore, regardless of the presence of the protrusion, the bottom surface of the support container 2 can be attached to the support stage (not shown) without difficulty.
  • the space S1 formed between the support container 2 and the ceramic substrate 3 is substantially sealed, so that air can flow therethrough. For this reason, it becomes possible to forcibly cool the ceramic substrate 3 by the flow of air to the space S 1 ⁇ , and the time required for cooling can be reduced as compared with the case of cooling. Therefore, if this semiconductor manufacturing / inspection apparatus is used, the time required for one drying process can be shortened without fail, and the productivity can be improved. Further, since the refrigerant supply pipe and the like are relatively inexpensive, productivity can be improved at low cost. Since the space S 1 is not closed but is substantially closed, air does not easily leak to the outside of the device, and there is no risk of contaminating the surroundings.
  • a refrigerant supply pipe 17 and a refrigerant discharge pipe 18 for communicating the inside and outside of the support container 2 are provided, respectively. Therefore, via both tubes 17 and 18 By efficiently circulating the air in the closed space S1, the ceramic substrate 3 can be forcibly cooled and returned to a low temperature in a relatively short time.
  • a heat insulating ring 14 is provided between the upper edge of the opening 4 of the support container 2 and the outer peripheral portion of the bottom surface of the ceramic substrate 3 to seal a gap in the portion. ing. Therefore, air leakage to the outside of the device through the gap between the support container 2 and the ceramic substrate 3 is prevented, and higher airtightness can be secured in the space S1. This contributes to ensuring the prevention of environmental contamination by air discharge.
  • a seal packing 8 is further provided in the wiring drawing hole 7 on the bottom 2a, and the lead wire 6 is inserted through the through hole. Therefore, air leakage to the outside of the device through the wiring lead-out hole 7 is prevented, and a higher airtightness can be ensured by the space S1. This also contributes to the prevention of surrounding pollution by air discharge.
  • each refrigerant discharge pipe 18 can be omitted.
  • each refrigerant discharge pipe 18 may be omitted, and an opening 27 may be provided at the bottom 2a. In this way, the structure of the semiconductor manufacturing / inspection apparatus 1 can be simplified, and the manufacturing cost can be reduced.
  • two refrigerant supply pipes 17 are provided at the bottom 2 a of the support container 2.
  • the number of the refrigerant supply pipes 17 may be increased to three or more. In this way, as the number of the refrigerant supply pipes 17 increases, the ceramic substrate 3 can be cooled in a shorter time, and the ceramic substrate 3 can be cooled more uniformly. The same applies to the number of refrigerant discharge pipes 18. Thus, three or more may be provided.
  • the resistance heating element 10 is formed by dividing each of the resistance parts 102 to 104 into three parts. Change to provide independent power supply. That is, by dividing the resistance pattern 10 into three, a circuit for generating heat in the resistance pattern 10 is divided into three. In this case, three heating regions A1 to A3 are formed on the ceramic substrate 3 as indicated by hatching in FIG. 4 (b).
  • each of the refrigerant supply pipes 17 and each of the refrigerant discharge pipes 18 arranged in the same areas A1 to A3 are arranged at positions that are the vertices of an equilateral triangle.
  • the temperature can be controlled by the ON / OFF operation of each circuit.
  • the cooling air can be blown to each of the heat generating regions A1 to A3 for cooling, the ceramic substrate 3 can be cooled more uniformly.
  • each refrigerant supply pipe 17 and each refrigerant discharge pipe 18 are not limited to positions at the vertices of an equilateral triangle, and may be disposed at any positions.
  • the number of pipes 17 and 18 in the same area is not limited to three, but at least one. That is, it is sufficient that at least one of the tubes 17 and 18 is provided for each of the heat generating areas A1 to A3.
  • the number of divided circuits is not limited to three, but may be two or four or more.
  • the total number of refrigerant supply pipes 17 may be at least 70% of the total number of divided circuits, and one or more refrigerant supply pipes 17 are necessarily provided for one circuit. No need. That is, when the number of circuits is 4, three or more refrigerant supply pipes 17 may be provided, and when the number of circuits is 10, seven or more refrigerant supply pipes may be provided. .
  • the lead-out hole 7 serving as a wiring lead-out portion may be provided in a place other than the bottom 2 a of the support container 2, for example, in a side wall of the support container 2.
  • air other than air air
  • an inert gas such as carbon dioxide or nitrogen
  • the liquid may be allowed to flow as a cooling fluid.
  • thermocouple may be embedded in the ceramic substrate 3 as needed. This is because the temperature can be controlled by measuring the temperature of the ceramic substrate 3 with a thermocouple and changing the voltage and current values based on the data. In this case, it is preferable that the lead wire of the thermocouple is also drawn out through the seal packing 8.
  • the first group of ceramic substrates for a semiconductor device according to the present invention have a brightness of N4 or less as a value based on the provisions of JIS Z8721. This is because a material having such brightness has excellent radiation heat quantity and concealing property. In addition, such a ceramic substrate can accurately measure the surface temperature by means of the thermoviewer.
  • the lightness N is defined as 0 for the ideal black lightness, 10 for the ideal white lightness, and the lightness of the color between these black lightness and white lightness. Each color is divided into 10 so that the perception is at the same rate, and displayed with the symbols NO to N10.
  • the actual measurement is performed by comparing the color charts corresponding to N0 to N10. In this case, the first decimal place is 0 or 5.
  • a ceramic substrate having such properties can be obtained by including 50 to 500 ppm of carbon in the ceramic substrate.
  • carbon There are two types of carbon, amorphous and crystalline.Amorphous carbon can suppress a decrease in the volume resistivity of a ceramic substrate at a high temperature. Since the decrease in the thermal conductivity of the ceramic substrate at a high temperature can be suppressed, the type of force can be appropriately selected according to the purpose of the substrate to be manufactured.
  • amorphous carbon for example, a hydrocarbon consisting of only C, H, and O, preferably a saccharide can be obtained by calcining in air, and as a crystalline carbon, Graphite powder or the like can be used.
  • carbon can be obtained by thermally decomposing the acrylic resin in an inert atmosphere (nitriding gas, argon gas) and then ripening and pressurizing.
  • an inert atmosphere nitriding gas, argon gas
  • the first group of ceramic substrates for semiconductor devices of the present invention preferably have a disk shape, a diameter of 20 mm or more is desirable, and a diameter of 250 mm or more is optimal.
  • Disc-shaped ceramic substrates for semiconductor devices are required to have uniform temperature, but the larger the diameter of the substrate, the more likely the temperature will be non-uniform.
  • the thickness of the first group of ceramic substrates for a semiconductor device of the present invention is preferably 50 mm or less, more preferably 20 mm or less. Also, 1 to 10 mm is optimal.
  • the thickness is too thin, warping at high temperatures is likely to occur, and if it is too thick, the heat capacity becomes too large and the temperature rise / fall characteristics deteriorate.
  • the porosity of the first group of ceramic substrates for a semiconductor device of the present invention is desirably 0 or 5% or less. This is because a decrease in thermal conductivity at high temperatures and the occurrence of warpage can be suppressed.
  • the first group of ceramic substrates for semiconductor devices of the present invention can be used at 200 or more.
  • thermocouple in a bottomed hole formed in the ceramic substrate. This is because the temperature of the resistance heating element can be measured with a thermocouple, and the temperature can be controlled by changing the voltage and current based on the data.
  • the size of the joining portion of the metal wires of the thermocouple is preferably equal to or larger than the wire diameter of each metal wire and 0.5 mm or less.
  • thermocouples examples include K-type, R-type, B-type, E-type, J-type, and T-type thermocouples, as described in JIS-C-162 (1980). Can be
  • the resistance heating elements embedded in the ceramic substrate are metals such as noble metals (gold, silver, platinum, palladium), tungsten, molybdenum, nickel, and the like.
  • metals such as noble metals (gold, silver, platinum, palladium), tungsten, molybdenum, nickel, and the like.
  • tungsten or molybdenum carbide it is desirable to be made of a conductive ceramic such as tungsten or molybdenum carbide.
  • the resistance itself can be increased, and the thickness itself must be increased in order to prevent disconnection, etc. This is because they are not easily oxidized and the aging conductivity is hardly lowered. These may be used alone or in combination of two or more.
  • the resistance heating element needs to make the temperature of the entire ceramic substrate uniform, a concentric pattern as shown in Fig. 12 or a combination of a concentric pattern and a bent line pattern is required. preferable.
  • the thickness of the resistance heating element is
  • It is preferably from 1 to 50 ⁇ , and the width is preferably from 5 to 2 O mm.
  • the resistance value can be changed by changing the thickness and width of the resistance heating element, but this range is the most practical.
  • the resistance value of the resistance ripening body is thin, and the resistance value increases as it becomes thinner.
  • the distance between the heating surface and the resistance heating element becomes shorter, and the uniformity of the surface temperature decreases. We need to increase the width.
  • the resistance heating element is provided inside the ceramic substrate, there is no need to consider adhesion to nitride ceramics or the like.
  • the resistance heating element is provided on the surface (bottom surface), the distance between the heating surface and the resistance heating element is increased, and the uniformity of the surface temperature can be improved.
  • the heat exchange can be achieved by bringing the cooling medium into direct contact with the resistor, rapid cooling can be achieved.
  • the resistance heating element may have a cross section of any of a square, an ellipse, a spindle, and a spheroid, but is desirably flat. This is because the flattened surface can easily radiate heat toward the heated surface, so that the amount of heat transmitted to the heated surface can be increased, and the temperature distribution on the ripened surface is difficult to achieve. Note that the resistance heating element may have a spiral shape.
  • the resistance heating element is formed in an area of up to 50% in the thickness direction from the bottom surface. This is to prevent the occurrence of temperature distribution on the heating surface and to uniformly heat the semiconductor wafer.
  • a conductive paste made of metal or conductive ceramic.
  • a resistance heating element when a resistance heating element is formed on the bottom surface of a ceramic substrate, baking is usually performed to produce the ceramic substrate, and then the above-mentioned conductive paste layer is formed on the surface of the ceramic substrate, followed by baking, thereby producing a resistance heating element. Form the body.
  • the above-mentioned conductive paste layer when forming a resistance heating element inside the ceramic substrate, the above-mentioned conductive paste layer was formed on the Darling sheet. Thereafter, the green sheet is laminated and fired to form a resistance heating element inside.
  • the conductive paste is not particularly limited, but preferably contains a resin, a solvent, a thickener, or the like containing metal particles or conductive ceramic particles in order to secure conductivity.
  • the material of the metal particles and the conductive ceramic particles include those described above.
  • the metal particles or conductive ceramic particles preferably have a particle size of 0.1 to 100 m. If it is too small, less than 0.1 / im, it is liable to be oxidized, while if it exceeds 100 ⁇ , sintering becomes difficult and the resistance value becomes large.
  • the shape of the metal particles may be spherical or scaly. When these metal particles are used, they may be a mixture of the sphere and the flakes. When the metal particles are flakes or a mixture of spheres and flakes, the metal oxide between the metal particles is easily retained, and the adhesion between the resistance heating element and the ceramic substrate is ensured. This is advantageous because the resistance value can be increased.
  • the resin used for the conductor paste include an acrylic resin, an epoxy resin, and a phenol resin.
  • the solvent include isopropyl alcohol and the like.
  • the thickener include cellulose and the like.
  • a metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is preferable to have it. Thus, by sintering the metal oxide together with the metal particles, the ceramic substrate and the metal particles can be more closely adhered.
  • metal oxide examples include lead oxide, zinc oxide, silica, and boron oxide ( ⁇ 0 3 ), at least one selected from the group consisting of ⁇ / remina, yttria and titania is preferred.
  • the adhesion to the ceramic substrate can be particularly improved.
  • the amount of the metal oxide added to the metal particles is preferably from 0.1% by weight to less than 10% by weight. Further, when the resistance heating element is formed using the conductor paste having such a configuration, the area resistivity is preferably 1 to 45 ⁇ .
  • the sheet resistivity exceeds 45 ⁇ ⁇ , the amount of heat generation becomes too large with respect to the applied voltage, and in a ceramic substrate for a semiconductor device provided with a resistive heating element on the surface, the amount of ripening is controlled. Because it is difficult. If the addition amount of the metal oxide is 10% by weight or more, the sheet resistivity exceeds 5 ⁇ opening, and the calorific value becomes too large to make temperature control difficult, resulting in temperature distribution. become.
  • a metal coating layer is preferably formed on the surface of the resistance heating element. This is to prevent the resistance value from changing due to oxidation of the internal metal sintered body.
  • the thickness of the metal coating layer to be formed is preferably 0.1 to 10 / zm.
  • the metal used for forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal, and specific examples thereof include gold, silver, palladium, platinum, and nickel. These may be used alone or in combination of two or more. Of these, nickel is preferred.
  • the resistance heating element is formed inside the ceramic substrate, the resistance heating No coating is required because the surface is not oxidized.
  • the heat insulating ring provided between the support container and the hot plate is a heat insulating ring having a plate supporting step on the inner peripheral edge. It is desirable that the support container is screwed to the opening heating surface.
  • the seal structure provided in the wiring lead-out section is an annular seal packing made of an elastic body. This makes it difficult for a gap to be formed between the wiring inserted through the seal packing and the wiring lead-out portion, thereby more reliably preventing leakage of fluid to the outside of the device and improving the sealing performance.
  • the fluid is desirably air. As a result, it has low reactivity, there is no fear of short-circuit between resistors, and it is also advantageous for low cost.
  • the support container is formed with a refrigerant discharge pipe for discharging the fluid in the support container to the outside.
  • the fluid supplied into the support container can be made to flow out of the refrigerant discharge pipe to the outside. Therefore, the hot plate can be cooled in a shorter time.
  • a hot plate has been described as an example of the semiconductor manufacturing and inspection apparatus of the first group of the present invention.
  • an electrostatic chuck, a wafer propper, a susceptor and the like can be mentioned.
  • the above-mentioned hot plate is a device in which only a resistance heating element is provided on the surface or inside of a ceramic substrate, whereby a heated object such as a semiconductor wafer can be heated to a predetermined temperature.
  • an electrostatic electrode when an electrostatic electrode is provided as a conductive layer inside a ceramic substrate constituting the semiconductor manufacturing / inspection apparatus of the first group of the present invention, it functions as an electrostatic chuck.
  • the metal used for the above-mentioned electrostatic electrode for example, noble metals (gold, silver, platinum, palladium), tungsten, molybdenum, nickel and the like are preferable.
  • the conductive ceramic used for the electrostatic electrode include carbides of tungsten and molybdenum. These may be used alone or in combination of two or more.
  • FIG. 5A is a longitudinal sectional view schematically showing a ceramic substrate used for an electrostatic chuck
  • FIG. 5A is a sectional view taken along line AA of the ceramic substrate shown in FIG.
  • chuck positive and negative electrode layers 62 and 63 are buried inside the ceramic substrate 61 and connected to through holes 680 respectively, and a ceramic dielectric film is formed on the electrode. 6 4 are formed.
  • a resistance heating element 66 and a through hole 68 are provided inside the ceramic substrate 61 so that an object to be heated such as a silicon wafer 29 can be heated.
  • an RF electrode may be buried in the ceramic substrate 61 as necessary.
  • the ceramic substrate 61 is usually formed in a circular shape in plan view, and the semi-circular portion 62 a shown in (b) is formed inside the ceramic substrate 61.
  • the chuck positive electrode electrostatic layer 62 composed of the comb teeth 62 b and the chuck negative electrostatic layer 63 also composed of the semi-circular part 63 a and the comb teeth 63 b are combined with each other. They are arranged to face each other so as to intersect 6 2 b and 6 3 b.
  • the ceramic substrate having such a configuration is fitted into a support container having substantially the same structure and function as the support container 2 shown in FIG. 1, and operates as an electrostatic chuck.
  • the plus side and one side of the wiring extending from the DC power supply in the control device are connected to the chuck positive electrode electrostatic layer 62 and the chuck negative electrode electrostatic layer 63, and a DC voltage is applied.
  • the semiconductor wafer mounted on the electrostatic chuck is electrostatically attracted and various processing can be performed on the semiconductor wafer.
  • FIGS. 6 and 7 are horizontal cross-sectional views schematically showing electrostatic electrodes of a ceramic substrate constituting another electrostatic chuck.
  • a ceramic substrate is used in the ceramic substrate for an electrostatic chuck shown in FIG. 6, a ceramic substrate is used.
  • a semi-circular chuck positive electrode electrostatic layer 1 12 and a chuck negative electrode electrostatic layer 1 13 are formed in the inside of 111, and the ceramic for the electrostatic chuck shown in Fig. 7 is formed.
  • the chuck positive electrode electrostatic layers 1 2 2 a and 1 2 b and the chuck negative electrode electrostatic layers 1 2 3 a and 1 2 3 b are formed by dividing a circle into four inside the ceramic substrate 12 1.
  • the two positive electrode electrostatic layers 122a and 122b and the two chuck negative electrode electrostatic layers 123a and 123b are formed to intersect, respectively.
  • the number of divisions is not particularly limited, and may be five or more, and the shape is not limited to a sector.
  • a check top conductor layer is provided on the surface of a ceramic substrate constituting the first group of semiconductor manufacturing and inspection devices of the present invention and a guard electrode or a ground electrode is provided as an internal conductor layer, it functions as a wafer prober. .
  • FIG. 8 is a cross-sectional view schematically showing one embodiment of a ceramic substrate constituting a first group of the wafer probers of the present invention
  • FIG. 9 is a plan view thereof
  • FIG. 8 is a cross-sectional view schematically showing one embodiment of a ceramic substrate constituting a first group of the wafer probers of the present invention
  • FIG. 9 is a sectional view taken along line AA of the wafer prober shown in FIG.
  • a concentric groove 58 is formed on the surface of a ceramic substrate 53 having a circular shape in plan view, and a plurality of suction holes 59 for sucking a silicon wafer are formed in a part of the groove 58.
  • a chuck top conductor layer 52 for connecting to an electrode of a silicon wafer is formed in a circular shape on most of the ceramic substrate 53 including the groove 58.
  • a resistance heating element 51 having a concentric circular shape in a plan view is provided in order to control the temperature of the silicon wafer.
  • external terminals are connected and fixed to both ends of the resistance heating element 51.
  • a guard electrode 56 having a lattice shape as shown in FIG. 10 and a ground electrode 57 (not shown) are provided in order to remove stray capacitor noise.
  • Reference numeral 55 indicates an electrode non-formed portion. Such a rectangular electrode non-formed portion 55 is formed inside the guard electrode 56 so that the upper and lower ceramic substrates 53 sandwiching the guard electrode 56 are firmly bonded. It is.
  • the ceramic substrate having such a configuration is fitted into a support container having a structure substantially similar to that shown in FIG. 1, and operates as a wafer prober.
  • a second group of the present invention is a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-shaped member connected and fixed to the outer frame portion. Is a supporting container having a plurality of openings formed therein, and a semiconductor manufacturing / inspection apparatus using the same is also one of the first inventions of the second group.
  • a second group of the present invention is a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-shaped body connected and fixed to the outer frame portion, Weight M (kg) and ceramic substrate diameter L (mm)
  • This is a support container characterized in that it is 200, and is one of the second inventions of a second group of semiconductor manufacturing / inspection apparatuses using the same.
  • any of the above-mentioned inventions has both of the above two requirements. Is preferred. Other configurations are substantially the same.
  • FIG. 11 (a) is a longitudinal sectional view schematically showing a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the second group of the present invention, and (b) is a heat shield member (heat shield plate). It is a perspective view which shows the bottom part of FIG.
  • FIG. 12 is a plan view of the semiconductor manufacturing / inspection apparatus shown in FIG.
  • this hot plate includes a ceramic substrate 3 and a supporting container 90, and a plurality of concentric resistances in plan view are provided on the surface (bottom surface) of the disk-shaped ceramic substrate 3.
  • a heating element 10 is formed, and a bottomed hole 34, a through hole 11 and the like are formed.
  • a temperature measuring element 37 connected to a lead wire 36 is embedded in the bottomed hole 34. I have.
  • the ceramic substrate 3 is fitted on the upper portion of a substantially cylindrical support container 90 via an insulating ring 14 having an L-shaped cross section.
  • the support container 90 is provided with a ring-shaped substrate receiving portion 93 that supports the ceramic substrate 3 and the heat insulating ring 14 inside the substantially cylindrical outer frame portion 91.
  • the heat insulation ring 14 and the ceramic substrate 3 are fixed by a substrate receiving portion 93 and a fixing bracket 97 via a bolt 98.
  • the fixing bracket 97 is attached to the bolt 98, and the ceramic substrate 3 and the like are pressed and fixed.
  • a heat shielding member (heat shielding plate) 96 for preventing heat radiation is connected and fixed to the outer frame portion 91.
  • the heat shield member (heat shield plate) 96 may be fixed via a port or the like, may be integrally formed with the outer frame portion 91, or may be fixed by welding or the like.
  • the heat shield plate 96 is not necessarily a plate-like body, but may be a bottomed cylindrical member in which the plate-like body and the cylindrical member are integrated.
  • control device containing a control device, a power supply, and the like is present below the support container 90, and the conductive wire 6 and the lead wire 36 are connected to the control device in the control device.
  • a heat shield plate 96 is provided between the control device and the ceramic substrate 3.
  • heat radiating fins may be interposed between the control device and the hot plate, if necessary.
  • the temperature and the like of the ceramic substrate 3 can be accurately controlled, and the silicon wafer W can be uniformly heated to a target temperature.
  • the above controller is also protected from the heat of the hot plate, and can operate normally.
  • the outer frame portion 91 and the heat shield plate 96 are made of a metal, specifically, at least one metal selected from stainless steel, aluminum, copper, steel, nickel, and a noble metal. It is desirable. Metals have high thermal conductivity and low specific heat, so they are easy to cool, and radiant heat does not hinder the cooling of the ceramic substrate 31. is there.
  • the thickness of the members (the outer frame portion 91 and the heat shield plate 96) constituting the support container 90 is preferably 0.1 to 5 mm. If it is less than 0.1 mm, the strength will be poor, and if it exceeds 5 mm, the heat capacity will increase.
  • the relationship between the projected area SA of the heat shield plate 96 (that is, the area of the bottom when there is no opening) and the total area S of the openings provided in the plate-like body is 0.03 ⁇ SZSA.
  • the total area of the openings is less than 3%, it becomes difficult to discharge the cooling medium that has exchanged heat with the ceramic substrate, and the heat capacity of the heat shield plate also increases.
  • the diameter (average diameter or length of one side in the case of an ellipse or a square) of one opening 96a is preferably 1 to 50 mm. If the diameter of the opening 96a is less than 1 mm, it is difficult to discharge the cooling medium, and if it exceeds 50 mm, it does not function as a heat shield.
  • the openings 96a are desirably arranged evenly on the heat shield plate as shown in FIG. 11 (b).
  • the resistive heating elements 10 are provided on the bottom surface as described above.
  • the terminal 12 is connected via a solder layer, and a socket 6 a having a conductive wire 6 is attached to the external terminal 12.
  • a through hole 11 for inserting a lifter pin (not shown) is formed in a portion near the center of the ceramic substrate 3, and a pin insertion sleeve 5 communicating with the through hole 11 is provided with a heat shield plate. Installed on 9 6 I have.
  • the support container 90 includes a substantially cylindrical outer frame portion 91, and an annular substrate receiving portion 93 provided inside the outer frame portion 91, and these are integrally formed. . Further, on the bottom surface of the outer frame part 91, a bottomed cylindrical heat shield member (heat shield plate 96) is installed.
  • the substrate receiving portion 93 supports the ceramic substrate 3 fitted via the heat insulating ring 14.
  • the heat shield plate 96 is provided with a refrigerant supply pipe 17 so that cooling air or the like can be introduced when the ceramic substrate 3 is cooled.
  • a large number of apertures 96a are provided for discharging the gas.
  • a cooling medium is supplied from the refrigerant supply pipe 17 and is discharged from the opening 96a, and the ceramic substrate 3 is cooled, whereby the ceramic substrate 3 can be rapidly cooled. it can.
  • the heat insulating ring 14 is preferably made of at least one resin selected from a polyimide resin, a fluororesin, and a benzoimidazole resin, or a fiber-reinforced resin.
  • the fiber-reinforced resin include a resin in which glass fiber fibers are dispersed. Since the fiber-reinforced resin softens even when the temperature is raised and the ceramic substrate does not tilt, the separation distance can be accurately secured when the wafer is held and ripened from the heated surface.
  • the resistance heating element 10 When the semiconductor manufacturing inspection apparatus (hot plate) of the second group of the present invention is operated, the resistance heating element 10 generates heat and the ceramic substrate 3 rises in temperature, but the temperature measurement embedded in the ceramic substrate 3 is performed.
  • the temperature of the ceramic substrate 3 is measured by the element 37, the measurement data is input to the control device, and the amount of applied voltage (current) is controlled, so that the temperature of the ceramic substrate 3 is controlled to a constant value.
  • FIG. 13 (a) is a cross-sectional view showing a hot plate according to another embodiment, and (b) is a perspective view schematically showing a heat shield plate, as shown in this hot plate.
  • a cylindrical portion 72 to which a radiation fin 72 d is attached may extend below the support container 70. By providing the radiation fins 72 d in this way, the hot plate can be cooled more quickly.
  • the cylindrical portion 72 provided at the lower part of the support container 70 is provided with a heat radiation fin, so that the heat radiation fin is placed on the control device in which the control device and the power supply are stored.
  • the hot plate can be installed via the. Then, the function of the radiation fins does not increase the temperature of the lower control device, but keeps it at a temperature close to normal temperature.
  • the configuration of the hot plate shown in FIG. 13 will be described later in detail.
  • the resistance heating element embedded in the ceramic substrate has been described in the first group of the present invention, and the description thereof will be omitted here.
  • a ceramic substrate provided with a resistance heating element has been described as an example of the conductor layer.
  • the conductor layer is not limited to the resistance heating element.
  • a chuck top conductor is provided on the surface of the ceramic substrate.
  • a guard electrode and a Dutch electrode are formed inside the layer.
  • electrostatic electrodes and RF electrodes are formed inside a ceramic substrate.
  • the materials and characteristics of the ceramic substrates constituting the semiconductor manufacturing / inspection apparatus of the second group of the present invention have been described in the first group of the present invention, and therefore, the description thereof will be omitted.
  • a method of manufacturing a hot plate will be described as an example of a method of manufacturing a semiconductor manufacturing / inspection apparatus of the second group of the present invention.
  • FIGS. 17 (a) to 17 (d) are cross-sectional views schematically showing a manufacturing process of a ceramic substrate having a resistance heating element inside a ceramic substrate constituting a second group of semiconductor manufacturing / inspection apparatuses of the present invention. It is.
  • the production method is not particularly described, but it can be produced by using a method similar to the method described below.
  • a paste is prepared by mixing a nitride ceramic powder with a pinda, a solvent, and the like, and a green sheet is produced using the paste.
  • a sintering aid such as yttria may be added.
  • crystalline or amorphous carbon may be added.
  • the binder at least one selected from an acrylic binder, ethyl cellulose, butyl cellulose solvent, and polyvinyl alcohol is desirable.
  • At least one selected from a-terbineol and glycol is desirable.
  • a paste obtained by mixing these is shaped into a sheet by a doctor blade method to produce a green sheet 500.
  • the thickness of the green sheet 500 is preferably 0.1 to 5 mm.
  • a part to be a through hole for inserting a support pin for supporting a silicon wafer and a part to be a bottomed hole for embedding a temperature measuring element such as a thermocouple into the obtained green sheet is formed.
  • the above processing may be performed after forming a green sheet laminate described later, or the above processing may be performed after forming a sintered body.
  • a conductor paste containing a metal paste or a conductive ceramic is printed on the green sheet 500 to form a conductor paste layer 320.
  • These conductor pastes contain metal particles or conductive ceramic particles.
  • the average particle diameter of the metal particles is preferably from 0.1 to 5. If the average particle exceeds a force of less than 0.1 ⁇ ⁇ 5 ⁇ , it is difficult to print the conductive paste.
  • a conductive paste for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; at least one kind of binder 1 selected from acryl-based, ethynolecellulose, butyl cellulose solvent, and polyvinyl alcohol; 5 to 10 parts by weight; and a composition (paste) in which at least one solvent selected from ⁇ -terbineol and glycol is mixed with 1.5 to 10 parts by weight.
  • the green sheet 5 on which the conductor paste prepared in the above step (1) is not printed 5 00 is laminated on and under the green sheet 500 on which the conductive paste layer 320 produced in the above step (2) is printed (FIG. 17 (a)).
  • the number of the green sheets 500 laminated on the upper side is made larger than the number of the dull sheets 500 laminated on the lower side, and the formation position of the resistance heating element 32 is eccentric toward the bottom.
  • the number of layers of the upper green sheet 500 is preferably 20 to 50, and the number of layers of the lower green sheet 500 is preferably 5 to 20.
  • the green sheet laminate is heated and pressurized to sinter the green sheet 500 and the internal conductive paste to produce a ceramic substrate 31 (FIG. 17 (b)).
  • the heating temperature is preferably from 100 to 200
  • the pressurization pressure is preferably from 100 to 200 kg / cm 2 .
  • Heating is performed in an inert gas atmosphere.
  • the inert gas for example, argon, nitrogen, or the like can be used.
  • the obtained ceramic substrate 31 is provided with a bottomed hole (not shown) for inserting a temperature measuring element and a blind hole 38 for inserting an external terminal (FIG. 17 (c)).
  • the bottomed hole 38 and the bag hole 38 can be formed by blasting such as drilling or sand blasting after surface polishing.
  • a washer 29 made of a conductive ceramic or the like is fitted into the through hole 39 exposed from the blind hole 38, and the conductive wire 33 is connected using a gold solder or the like (FIG. 17 (d)).
  • the ripening temperature is preferably from 90 to 450 in the case of soldering, and is preferably from 900 to 110 ⁇ in the case of treatment with brazing material.
  • a thermocouple as a temperature measuring element is sealed with a heat-resistant resin to form a ceramic substrate for a hot plate.
  • the obtained ceramic substrate is fitted through a heat insulating ring into a supporting container having a structure as shown in FIGS. 11 to 13, and wiring from a temperature measuring element 37 such as a thermocouple and a resistance heating element 32 is provided. Then, insert the cylindrical part or the like into the radiator fin of the control device equipped with the radiator fin, or attach it to the controller and connect the wiring to the control device below it.
  • the heat shield plates 86 and 96 of the supporting container were shot by punching after forming a disk etc. with metal. Pull out to form an opening.
  • a silicon wafer or the like is placed on the hot plate, or the silicon wafer or the like is held by support pins, and then the object to be heated such as the silicon wafer is heated and various operations are performed. be able to.
  • the ceramic substrate for the electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate, and a chuck top conductor layer is provided on the heating surface.
  • a ceramic substrate for a wafer proper can be manufactured.
  • a conductive paste layer may be formed on the surface of the green sheet as in the case of forming the resistance heating element.
  • a conductor layer is formed on the surface of the ceramic substrate, a sputtering method or a plating method can be used, and these may be used in combination.
  • the present invention will be described based on the embodiments of the present invention.
  • the third group of the present invention is not limited to this embodiment and can be modified without impairing the effects of the present invention. ,.
  • a semiconductor manufacturing / inspection apparatus includes a disc-shaped ceramic substrate provided with a resistance heating element composed of one or more circuits, a substantially cylindrical outer frame portion, and an outer frame portion.
  • a ring-shaped substrate receiving portion provided at an upper portion on the inner side and supporting the ceramic substrate fitted via a heat insulating ring; and a heat shield plate provided at a lower portion on the inner side of the outer frame portion for preventing heat radiation.
  • a support container including an annular heat-shielding plate receiving portion for supporting through a connecting member.
  • a cylindrical portion having a diameter smaller than that of the outer frame portion and having a force having a heat radiation fin or a heat radiation fin can be fitted to the bottom of the outer frame portion.
  • the above-mentioned semiconductor manufacturing / inspection apparatus has a configuration in which a cylindrical part having a smaller diameter than the outer frame part is extended at the bottom part, and the cylindrical part is provided in a conventional precision equipment storage part. It can be fitted directly into a cooler with a radiating fin (hereinafter referred to as a radiating fin). Therefore, there is no need to newly produce the above-mentioned heat radiation fins and the like, and the control device provided with the conventionally used heat radiation fins can be used as it is.
  • FIG. 14 is a vertical sectional view schematically showing a hot plate which is an example of the third group of semiconductor manufacturing and inspection equipment of the present invention
  • FIG. 15 is a plan view thereof.
  • the third group of semiconductor manufacturing / inspection devices of the present invention comprises a ceramic substrate 31 on which a resistance heating element 32 is formed and a supporting container 40, and the ceramic substrate 31 has an L-shaped thermal insulation in cross section. It is fitted into the upper part of the support container 40 via the ring 14.
  • a concentric resistance heating element 32 composed of a plurality of circuits is provided inside the disc-shaped ceramic substrate 31, and a blind hole 38 is formed at an end 3 2 a of the resistance heating element.
  • the end 32 a of the resistance heating element and the conductive wire 33 are connected through a through hole 39.
  • a through hole 35 for inserting a support pin (not shown) and a bottomed hole 34 are formed in a portion near the center, and a temperature measuring element 3 to which a lead wire 36 is connected is formed. 7 is inserted into the bottomed hole 34.
  • the support container 40 includes a substantially cylindrical outer frame portion 41, and a ring-shaped substrate receiving portion 43 and a heat-shielding plate receiving portion 4 provided on the upper and lower portions of the inner side of the outer frame portion 41, respectively. 4 and a cylindrical portion 42 provided on the bottom surface of the outer frame portion 41 and having a smaller diameter than the outer frame portion 41. These are integrally formed.
  • the substrate receiving portion 43 supports the ceramic substrate 31 fitted via the heat insulating ring 14, and the heat shield plate receiving portion 44 serves to prevent heat radiation through a connecting member 47 such as a bolt.
  • the heat shield plates 46 are supported.
  • the heat shield plate 46 is provided with a refrigerant introduction pipe 17 so that cooling air or the like can be introduced when the ceramic substrate 31 is cooled. Further, a pin insertion sleeve 5 communicating with the through hole 35 through which the support pin is inserted is formed.
  • a radiation fin 130 is fitted into the cylindrical portion 42 at the lower part of the support container 40, and a control device containing a control device is provided below the radiation fin 130.
  • the conductive wire 33 and the lead wire 36 are connected to the control device in the control device.
  • the material of the supporting container 40 is not particularly limited, and examples thereof include metals such as iron and SUS.
  • the outer frame portion 41 has a substantially cylindrical shape, and its inner diameter is determined by the ceramic substrate used, but a ceramic substrate of 25 O mm or more can be fitted through a maturing ring. Size is preferred.
  • the outer diameter of the cylindrical portion 42 is set to a size that can be fitted into the radiation fin, that is, 200 to 243 mm.
  • the resistance heating element 32 When the semiconductor manufacturing / inspection apparatus of the third group of the present invention is operated, the resistance heating element 32 generates heat and the temperature of the ceramic substrate 31 rises, but the temperature measuring element 3 embedded in the ceramic substrate 3 1 By 7, the temperature of the ceramic substrate 31 is measured, the measured data is input to the control device, and the applied voltage (current) is controlled, so that the temperature of the ceramic substrate 31 is controlled to a constant value.
  • the outer diameter of the cylindrical portion 42 is just large enough to fit into the radiating fins.
  • the plate can be installed.
  • the lower control device does not become high in temperature due to the function of the radiation fins, and is maintained at a temperature close to room temperature.
  • the resistance heating element embedded in the ceramic substrate has been described in the first group of the present invention, and the description thereof is omitted here.
  • a ceramic substrate provided with a resistance heating element has been described as an example of the conductor layer.
  • the conductor layer is not limited to the resistance heating element.
  • a chuck top conductor is provided on the surface of the ceramic substrate.
  • a guard electrode and a Dutch electrode are formed inside the layer.
  • electrostatic electrodes and RF electrodes are formed inside a ceramic substrate.
  • This hot plate is composed of a ceramic substrate 31 and a support container 70.
  • the ceramic substrate 31 has the same configuration as the ceramic substrate 31 shown in FIG. 14, and the ceramic substrate 31 is thermally insulated. It is fitted into the upper part of the support container 70 via the ring 14.
  • the support container 70 includes a substantially cylindrical outer frame portion 71, and a ring-shaped substrate receiving portion 73 and a heat shield plate receiving portion provided on the inner upper and lower portions of the outer frame portion 71, respectively. And a part 74, which are integrally formed.
  • a cylindrical portion 7 is connected via an intermediate portion 7 2a having an upper annular portion 7 2b, a lower annular portion 7 2c, and a power radiating fin 7 2d. 2, the diameter of the cylindrical portion of the intermediate portion 72 a is smaller than that of the outer frame portion 71.
  • the cylindrical portion 72 is separated from the outer frame portion 71 and the like, and is extended so as to be detachable. Therefore, the cylindrical portion 72 is, together with the heat shield plate 86, bolts and the like. It is supported and fixed to the heat shield plate receiving portion 74 via the connecting member 77.
  • the internal structure, wiring, etc. of the heat shield plate 86 are substantially the same as those of the hot plate shown in FIG. 13, and a control device is provided below the cylindrical portion 72 having the heat radiation fins 72 d.
  • the conductive wire 33 and the lead wire 36 are connected to control equipment in the control device.
  • the diameter of the cylindrical portion of the cylindrical portion 72 is the same as the diameter of the cylindrical portion 72 shown in FIG.
  • the resistance heating element 32 When this hot plate is activated, the resistance heating element 32 generates heat and the ceramic substrate 31 rises in temperature. However, the temperature measurement element 37 embedded in the ceramic substrate 31 allows the ceramic substrate 3 to be heated. The temperature of 1 is measured, the measured data is input to the control device, and the amount of applied voltage (current) is controlled, so that the temperature of the ceramic substrate 31 is controlled to a constant value.
  • the cylindrical portion 72 can be attached to a control device, the control device and the power supply are housed, and the third group of the semiconductor manufacturing / inspection device of the present invention is installed on the control device. It can be attached, and by the function of the radiation fin, the lower control device Can be kept at almost room temperature.
  • the cylindrical portion having a small diameter only needs to be fitted to the main body of the apparatus, it is not necessary to increase the size of the fitting portion and to increase the size of the apparatus.
  • the size of the fitting portion can be the same as that of the conventional one, so that the apparatus main body can be left as it is.
  • the hot plate has been described as an example of the semiconductor manufacturing / inspection apparatus of the third group of the present invention.
  • Specific examples of the third group of semiconductor manufacturing / inspection apparatuses of the present invention include, for example, an electrostatic chuck, a wafer prober, and a susceptor in addition to the hot plate.
  • this granular powder was placed in a mold having a hexagonal cross section, and formed into a hexagonal flat plate to obtain a green body.
  • a disk having a diameter of 210 mm was cut out from the sintered body to obtain a ceramic plate (ceramic substrate).
  • the plate-shaped body is subjected to dry-rolling, and a portion serving as a through hole for inserting a support pin of a semiconductor wafer and a portion serving as a bottomed hole for embedding a thermocouple (diameter: 1.1 mm, (Depth: 2 mm).
  • a conductor paste was printed on the bottom surface of the sintered body obtained in (3) by screen printing.
  • the printing pattern was concentric.
  • Solvent PS 603D manufactured by Tokuka Chemical Laboratory, which is used to form through holes in printed wiring boards, was used.
  • This conductor paste is a silver-lead paste, with 100 parts by weight of silver being lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), and boron oxide (25% by weight). ) And alumina (5% by weight).
  • the silver particles had an average particle size of 4.5 / zm and were scaly.
  • the silver-lead resistance heating element 32 had a thickness of 5 / zm, a width of 2.4 mm, and an area resistivity of 7.7 mQZ.
  • Silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing on the part where external terminals for securing connection to the power supply were to be formed, forming a solder paste layer.
  • an external terminal made of Kovar is placed on the solder paste layer, heated and reflowed at 420, the external terminal is attached to the surface of the resistance heating element, and then a socket having a conductive wire is connected to the external terminal. Attached.
  • thermocouple for temperature control was inserted into the bottomed hole, filled with polyimide resin, cured at 190 for 2 hours, and the production of the ceramic substrate for the hot plate was completed. Thereafter, the ceramic substrate having the resistance ripening body is fitted into a support container 90 having a structure as shown in FIG. 11, and the lead wires from the temperature measuring element (thermocouple) and the stakes are formed. Conductive wires from the end of the heating element were arranged as shown in FIG.
  • the outer frame portion and the heat shield plate are made of stainless steel having a diameter of 220 mm and a thickness of 1.5 mm, and the heat insulating ring 14 is made of a fluorine resin reinforced with glass fiber.
  • the bolt 98, the fixing bracket 97, and the refrigerant supply pipe 17 are also made of stainless steel.
  • the heat shield 96 has a diameter of 10 mix! An opening of about 4 Omm was provided, and the area ratio of the opening was 15% (Example 1), 30% (Example 2), and 50% (Example 3).
  • the weight (total of the outer frame part 91, heat shield plate 96, heat insulating ring 14, Bonoleto 98, fixing bracket 97, and refrigerant supply pipe 17) is 0.96 kg (Example 1) and 0.96 kg, respectively. 86 kg (Example 2) and 0.78 kg (Example 3). See Table 1 for details.
  • Example 2 Basically, it is the same as Example 1, except that the area ratio of the opening (diameter 10 mm) of the heat shield 96 is 8.0%, and the weight (the outer frame part 91, the heat shield 96, Insulation ring 14, bolt 98, fixing bracket 97, and refrigerant supply pipe 17) totaled 0.98 kg.
  • Example 2 Basically similar to Example 1, except that the diameter of the opening is 2 Omm, the area ratio of the opening of the heat shield plate 16 is 30%, and the thickness of the heat shield plate is 3 mm.
  • the weight (total of the outer frame portion 91, the heat shield plate 96, the heat insulating ring 14, the bolt 98, the fixing bracket 97, and the refrigerant supply pipe 17) Weighed 1.42 kg.
  • Example 2 the refrigerant was introduced and allowed to cool.
  • the time required to decrease the temperature from 200 to 25 ° C was as follows in Examples 1 to 3. In each case, the time was 2 minutes, the time in Example 4 was 3 minutes, and the time in Example 5 was 5 minutes. In each of the examples, the cooling time was relatively short.
  • the main factor that determines the cooling rate is the weight of the supporting vessel, and the opening ratio is a secondary factor.
  • the cooling rate is significantly reduced.
  • the temperature reduction rate can be improved only by controlling the weight of the opening and the supporting container, and a device having a simple structure and low cost can be obtained.
  • this granular powder was placed in a mold having a hexagonal cross section, and formed into a hexagonal flat plate to obtain a green body.
  • a disk having a diameter of 210 mm was cut out from the sintered body to obtain a ceramic plate (ceramic substrate).
  • this plate is drilled to form a through hole for inserting a support pin of a semiconductor wafer and a bottomed hole for embedding a thermocouple (diameter: 1. lmm, depth: 2 mm).
  • a conductor paste was printed on the bottom surface of the sintered body obtained in (3) by screen printing.
  • the printing pattern was concentric.
  • Solvent PS 603D manufactured by Tokuka Chemical Laboratory, which is used to form through holes in printed wiring boards, was used.
  • This conductor paste is a silver-lead paste, and based on 100 parts by weight of silver, oxidized lead (5% by weight), zinc oxide (55% by weight), silica (10% by weight), and boron oxide (25% by weight) %) And 7.5% by weight of a metal oxide consisting of alumina (5% by weight).
  • the silver particles had a mean particle size of 4.5 / m and were flake-like.
  • the silver / lead resistance heating element 32 had a thickness of 5 m, a width of 2.4 mm, and an area resistivity of 7.7 mQZ.
  • Silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing on the part where external terminals for securing connection to the power supply were to be formed, forming a solder paste layer.
  • the external terminals made of Kovar are placed on the solder paste layer, heated and reflowed at 420 ° C, and the external terminals are attached to the surface of the resistance heating element. Sockets were attached to the external terminals.
  • thermocouple for temperature control was inserted into the bottomed hole, filled with polyimide resin, cured at 190 for 2 hours, and the production of the ceramic substrate for the hot plate was completed. Thereafter, the ceramic substrate having the resistance heating element is fitted into a support container 40 having a structure as shown in FIG. 14, and the lead wire from the temperature measuring element (thermocouple) and the end from the end of the resistance heating element are connected.
  • the conductive wires were arranged as shown in FIG. 14, and the cylindrical portion 42 constituting the hot plate support container 40 was fitted into the radiating fins of the control device to connect the wires to the control device. .
  • Conductor paste ⁇ was prepared.
  • tungsten particles having an average particle size of 3 / zm 100 parts by weight of tungsten particles having an average particle size of 3 / zm, 1.9 parts by weight of an acryl-based binder, 3.7 parts by weight of an ⁇ -terbineol solvent and 0.2 parts by weight of a dispersant are mixed to prepare a conductive paste ⁇ . did.
  • the conductor paste A was printed on the green sheet by screen printing to form a conductor base layer 320 for the resistance heating element 32.
  • the printing pattern was a concentric pattern, the width of the conductor paste layer was 10 mm, and its thickness was 12 // m.
  • the obtained laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, and hot-pressed at 189 O and a pressure of 150 kg / cm 2 for 10 hours to form a 3 mm thick plate.
  • An aluminum nitride sintered body was obtained. This was cut into a 23 Omm disk and used as a hot plate with a resistance heating element 32 with a thickness of 6 ⁇ and a width of 1 Omm (aspect ratio: 1666) (see Fig. 1). 7 (b)).
  • the plate obtained in (4) is polished with a diamond grindstone, a mask is placed on the plate, and a bottomed hole for a thermocouple is formed on the surface by blasting with SiC or the like. Was set up.
  • the plate-shaped body is subjected to dorinor processing to form a blind hole 38 (FIG. 17 (c)).
  • the conductive wire 33 is formed. center hole in ⁇ input City, N i-Au alloy (Au: 8 1. 5 wt%, N i: 1 8. 4 weight 0/0, impurities: 0. 1 wt%) of gold braze used consisting, 9 7, the washer 29 and the conductive wire 33 were brazed, and the conductive wire 33 was connected to the end of the resistance heating element 32 through the through hole 38 (Fig. 17 (d )).
  • thermocouples for temperature control were embedded in the bottomed holes, filled with a polyimide resin, and cured at 190 ° C for 2 hours to produce a ceramic substrate for a hot plate.
  • Example 6 After that, in substantially the same manner as in Example 6, it is inserted into the support container 40 shown in FIG. 14 to perform wiring and the like. Further, the completed hot plate is inserted into the control device, and the wiring to the control device is performed. Connected.
  • the support container is provided with the refrigerant supply pipe for communicating the inside and the outside thereof, the entire semiconductor manufacturing / inspection apparatus is uniformly cooled in a short time. be able to.
  • the opening is formed in the plate-shaped body fixed to the support container, high-speed temperature reduction can be realized.
  • a control unit including a conventionally used radiation fin or the like is provided at the bottom of the support container.
  • the device can be used as it is.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

L'invention concerne un dispositif semiconducteur de fabrication/inspection capable d'effectuer un refroidissement total de manière uniforme et rapide. Ce dispositif semiconducteur de fabrication/inspection, dans lequel une base en céramique pourvue d'un générateur de chaleur à résistance est logée dans une ouverture d'un récipient de support inférieur, se caractérise en ce que le récipient de support est pourvu d'un conduit d'alimentation en fluide de refroidissement destiné à mettre l'intérieur de ce récipient de support en communication avec l'extérieur dudit récipient.
PCT/JP2000/005045 1999-08-09 2000-07-28 Recipient de support et dispositif semiconducteur de fabrication/inspection WO2001011664A1 (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP22533599A JP4330717B2 (ja) 1999-08-09 1999-08-09 ホットプレートユニット及びホットプレートユニットの使用方法
JP11/225335 1999-08-09
JP2000093200 2000-03-30
JP2000/93200 2000-03-30
JP2000170452A JP2001345371A (ja) 2000-03-30 2000-06-07 支持容器および半導体製造・検査装置
JP2000170453 2000-06-07
JP2000/170452 2000-06-07
JP2000/170453 2000-06-07

Publications (1)

Publication Number Publication Date
WO2001011664A1 true WO2001011664A1 (fr) 2001-02-15

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0320297A2 (fr) * 1987-12-10 1989-06-14 Canon Kabushiki Kaisha Procédé pour contrôler la température d'une plaquette semi-conductrice sur un dispositif de fixation
JPH04181724A (ja) * 1990-11-16 1992-06-29 Ngk Insulators Ltd 加熱装置
JPH0917849A (ja) * 1995-06-28 1997-01-17 Ngk Insulators Ltd 半導体ウエハー保持装置、その製造方法およびその使用方法
JPH10165875A (ja) * 1996-12-06 1998-06-23 Dainippon Screen Mfg Co Ltd 基板回転保持装置および回転式基板処理装置
WO1998045875A1 (fr) * 1997-04-07 1998-10-15 Komatsu Ltd. Dispositif de regulation de la temperature
JPH10303288A (ja) * 1997-04-26 1998-11-13 Anelva Corp プラズマ処理装置用基板ホルダー

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0320297A2 (fr) * 1987-12-10 1989-06-14 Canon Kabushiki Kaisha Procédé pour contrôler la température d'une plaquette semi-conductrice sur un dispositif de fixation
JPH04181724A (ja) * 1990-11-16 1992-06-29 Ngk Insulators Ltd 加熱装置
JPH0917849A (ja) * 1995-06-28 1997-01-17 Ngk Insulators Ltd 半導体ウエハー保持装置、その製造方法およびその使用方法
JPH10165875A (ja) * 1996-12-06 1998-06-23 Dainippon Screen Mfg Co Ltd 基板回転保持装置および回転式基板処理装置
WO1998045875A1 (fr) * 1997-04-07 1998-10-15 Komatsu Ltd. Dispositif de regulation de la temperature
JPH10303288A (ja) * 1997-04-26 1998-11-13 Anelva Corp プラズマ処理装置用基板ホルダー

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