WO2001011664A1

WO2001011664A1 - Support container and semiconductor manufacturing/inspecting device

Info

Publication number: WO2001011664A1
Application number: PCT/JP2000/005045
Authority: WO
Inventors: Masakazu Furukawa; Mitsuteru Tomita; Yasuji Hiramatsu; Yasutaka Ito
Original assignee: Ibiden Co., Ltd.
Priority date: 1999-08-09
Filing date: 2000-07-28
Publication date: 2001-02-15

Abstract

A semiconductor manufacturing/inspecting device capable of cooling the whole uniformly in a short time. The semiconductor manufacturing/inspecting device in which ceramic base having a resistor heat generator is disposed in an opening of a bottomed support container is characterized in that a coolant supply pipe for communication of the inside of the support container with its outside is provided to the support container.

Description

Specification

Support container and semiconductor manufacturing · Inspection equipment Technical field

The present invention mainly comprises a support container constituting a device for manufacturing or inspecting a semiconductor, such as a hot plate (ceramic heater), an electrostatic chuck, and a vacuum probe, and the support container and a ceramic substrate. The present invention relates to a semiconductor manufacturing / inspection apparatus, and in particular, to a supporting container and a semiconductor manufacturing / inspection apparatus which have a high cooling rate and can be used for a ceramic substrate having a larger size. Background art

In a semiconductor manufacturing process, for example, when heating and drying a silicon wafer that has undergone a photosensitive resin coating step, a heating device called a hot plate is usually used.

As a conventional example of this type of apparatus, there is, for example, one disclosed in Japanese Patent Publication No. Hei 11-3873. The apparatus disclosed in the publication includes a hot plate using a ceramic substrate made of aluminum nitride as an electric heating member, and a resistance ripening member provided on the ceramic substrate. The resistance heating element is formed on the bottom surface of the ceramic substrate constituting the hot plate. Both ends of the resistance heating element protruding to the side of the plate are connected to the power supply via wiring.

Then, a silicon wafer, which is a heat substance, is placed on the heating surface side of the hot plate, and the resistance heating element is energized in this state, so that the silicon wafer is heated to several hundreds.

By the way, when the photosensitive resin is dried by heating the resistive heating element for a predetermined period of time by energizing the resistance heating element, it is necessary to first cool the hot plate to a certain low temperature and then remove the silicon wafer. However, it takes a certain amount of time to cool down, which has been an obstacle to improving productivity.

In recent years, in the manufacture of semiconductor products, a reduction in the time required for throughput has been required, and there has been a strong demand for a reduction in cooling time. Therefore, for example, Japanese Patent Publication No. Hei 8-82246 describes a technique for attaching a cooling fin-type cooling body to a hot plate. However, with this cooling body, although the hot plate could be locally cooled, the whole could not be cooled uniformly.

Usually, such a hot plate is supported and used by a substantially cylindrical container called a support container. A control device containing a control device, a power supply and the like is present below the support container, and the above-mentioned wiring and the like are connected to the control device in the control device.

However, precision instruments are sensitive to high temperatures, so when using a hot plate, it is necessary to shield the radiant heat of ceramic substrates such as aluminum nitride and protect the control devices that house the precision instruments. Therefore, a heat shield plate is provided between the control device and the ceramic substrate, and a radiation fin is interposed between the control device and the hot plate.

By using a semiconductor manufacturing / inspection apparatus having such a configuration, it is possible to accurately control the temperature of the ceramic substrate and the like, and the above-described control apparatus is also protected from the ripening of the hot plate, and is operated normally. Operation becomes possible.

However, in recent years, silicon wafers used for semiconductor products have been required to have a larger size, and therefore, the size of a ceramic substrate or a supporting container on which a silicon wafer is mounted has to be increased. However, if the control device, which has radiating fins for placing these supporting containers and the like and contains precision equipment inside, must be resized according to the size of the supporting containers, it is economical. Burden increases.

In addition, even when the heat radiation fins are not provided, the supporting container is fixed to the device, which takes up a space for fixing the supporting container, and there is a problem that the entire device becomes large. Summary of the Invention

The present invention has been made in order to solve the above-mentioned problems. The first group of the present invention uses a simple structure, is low-cost, and can shorten the entire hot plate in a short time. It is an object of the present invention to provide a semiconductor manufacturing / inspection device capable of uniformly cooling between the devices.

Another object of the present invention is to provide a support container capable of improving the cooling rate of a ceramic substrate having a resistance heating element, and a semiconductor manufacturing / inspection apparatus using the support container.

The third group of the present invention can reduce the size of the device by extending a cylindrical portion having an outer diameter smaller than the outer frame of the support container. It is an object of the present invention to provide a support container capable of directly using the entire apparatus including a control device provided therein, and a semiconductor manufacturing / inspection apparatus using the support container.

A first group of semiconductor manufacturing / inspection apparatuses of the present invention are semiconductor manufacturing / inspection apparatuses in which a ceramic substrate having a resistance heating element is disposed in an opening of a bottomed supporting container, Is characterized in that a coolant supply pipe is formed to communicate the inside and the outside of the coolant supply pipe.

According to the first group of semiconductor manufacturing / inspection apparatuses of the present invention, since the support container is provided with a refrigerant supply pipe for communicating the inside and the outside thereof, by flowing a fluid from the refrigerant supply pipe into the support container, The fluid can be uniformly sprayed on the entire ceramic substrate. Therefore, it is possible to forcibly cool the ceramic substrate, and it is possible to cool the ceramic substrate in a shorter time as compared with cooling. That is, the entire ceramic substrate can be uniformly cooled in a short time. Further, since a refrigerant supply pipe having a simple structure can be used, cooling can be performed at low cost.

It is desirable that the coolant supply pipe be formed at the bottom of the support container. This is because the fluid circulated from the refrigerant supply pipe can be blown perpendicular to the ceramic substrate surface.

It is desirable that a plurality of the refrigerant supply pipes are formed. This is because the ceramic substrate can be uniformly cooled in a shorter time.

It is preferable that a heat insulating ring is provided between the upper edge of the opening of the support container and the outer peripheral portion of the bottom surface of the ceramic substrate. This is because a hermetically closed space is formed between the support container and the ceramic substrate, so that the fluid circulated in the support container can be prevented from leaking outside. It is desirable that a sealing member is provided at the wiring lead-out portion of the support container. This is because leakage of the fluid to the outside of the device through the portion is prevented, and a higher sealing property can be ensured by the space formed between the support container and the ceramic substrate.

The support container of the first invention of the second group is a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-like body connected and fixed to the outer frame portion. A plurality of openings are formed in the plate-shaped body. Further, a semiconductor manufacturing / inspection apparatus using the same also belongs to the first invention of the second group.

The support container of the second invention of the second group is a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-like body connected and fixed to the outer frame portion. The relationship between the weight M (kg) of the ceramic substrate and the diameter L (mm) of the ceramic substrate is M≤L / 200. Further, a semiconductor manufacturing and inspection apparatus using the same also belongs to the second group of the second invention.

In the support container of the first invention of the second group, a plurality of openings are formed in the plate-shaped body functioning as a bottom plate or a heat shield plate, thereby reducing the heat capacity of the plate-shaped body and discharging and cooling the cooling medium. This makes it possible to improve the cooling rate. The relationship between the projected area S A of the plate-shaped body and the total area S of the openings provided in the plate-shaped body is preferably 0.33 ≦ SZSA, and more preferably 0.1 ≦ SZSA.

By setting the ratio of the total area of the openings to 3% or more, the heat capacity of the plate-shaped body can be reduced, and the cooling medium that has exchanged heat with the ceramic substrate can be easily discharged, thereby improving the cooling rate. Because you can.

The cooling medium is supplied from a cooling medium supply port provided in the plate. The cooling medium may be a liquid or a gas, but is preferably a gas from the viewpoint of preventing a short circuit of the resistance heating element. Examples of the gas include an inert gas such as nitrogen, argon, helium, and chlorofluorocarbon, and air. Examples of the liquid include water and ethylene glycol.

In the support container of the second invention of the second group, the weight M (kg) of the support container and the diameter L (mm) of the ceramic substrate satisfy the relational expression of 0 such that The weight M of the supporting container and the diameter L of the ceramic substrate are set.

The reason why both are set in this way is that the lighter the weight of the supporting container, the smaller the heat capacity, the faster the cooling, and the lower the radiant heat from the supporting container. The weight refers to the total weight, and refers to the weight of the substantially cylindrical outer frame portion and the plate-like body connected and fixed to the outer frame portion. The cooling medium supply port and the heat insulating ring (heat insulating material) are formed. If this is the case, include the weight of the cooling medium supply port and the heat insulating material. The smaller the total weight, the smaller the heat capacity and the easier it is to cool, and the cooling of the ceramic substrate is not hindered by the radiation ripening from the support container itself.

However, as the diameter of the ceramic substrate increases, the size of the supporting container also increases, and the upper limit of the weight increases accordingly. For this reason, the upper limit of the weight M of the supporting container is set to be a function of the diameter of the ceramic substrate.

As a method of reducing the weight of the support container, a method of providing an opening in the plate-like body or setting the thickness of each member constituting the support container to 0.1 to 5 mm can be adopted. If the thickness of the supporting container exceeds 5 mm, the ripening capacity becomes too large.

Thus, in the second group of the first invention, a plurality of openings are formed in the plate-like body constituting the support container, and in the second group of the second invention, the weight M (kg) of the support container is The weight M of the supporting container and the diameter L of the ceramic substrate are set so as to satisfy the relational expression of M ≦ LZ200 between the diameter L (mm) of the ceramic substrate and the diameter L (mm) of the ceramic substrate.

A third group of the support containers of the present invention is a support container for supporting a stage substrate, wherein the support container has a substantially cylindrical outer frame portion and a cylinder having a smaller diameter than an outer frame portion extending to the bottom of the outer frame portion. Part,

Further, a third group of semiconductor manufacturing / inspection apparatuses of the present invention include a disc-shaped ceramic substrate provided with a conductor layer on the surface or inside thereof, a substantially cylindrical outer frame portion for receiving the ceramic substrate, and the outside. And a support container including a cylindrical portion having a smaller diameter than the outer frame portion extended at the bottom of the frame portion.

It is desirable that a heat dissipating fin is formed on the cylindrical portion having a smaller diameter than the outer frame portion of the third group of support containers of the present invention. This is because the radiation fins can directly release the heat that adversely affects the device to the outside.

The radiating fins may be formed directly on the cylindrical part with a smaller diameter than the outer frame part. Alternatively, it may be formed by fitting a small-diameter cylindrical portion to the cylinder on which the radiation fins are formed. In the former case, the heat transfer property is excellent, and in the latter case, the outer frame in which the stage plate (ceramic substrate, aluminum plate, etc.) is incorporated can be easily replaced from the apparatus body.

It is preferable that the cylindrical portion having a smaller diameter than the outer frame portion is detachably extended from the outer frame portion. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a cross-sectional view schematically showing a hot plate as an example of a first group of semiconductor manufacturing / inspection apparatuses of the present invention.

FIG. 2 is a partially enlarged sectional view of the hot plate shown in FIG.

FIG. 3 is a cross-sectional view schematically showing another embodiment of a hot plate, which is an example of a first group of semiconductor manufacturing and inspection apparatuses of the present invention.

FIGS. 4A and 4B are plan views schematically showing still another embodiment of a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the first group of the present invention.

FIG. 5 (a) is a longitudinal sectional view schematically showing a ceramic substrate constituting a first group of electrostatic chucks according to the present invention, and FIG. 5 (b) is an A-type ceramic substrate shown in FIG. 5 (a). FIG. 3 is a sectional view taken along line A.

FIG. 6 is a horizontal sectional view schematically showing another example of the ceramic substrate constituting the first group of the electrostatic chuck according to the present invention.

FIG. 7 is a horizontal sectional view schematically showing still another example of the ceramic substrate constituting the first group of the electrostatic chuck according to the present invention.

FIG. 8 is a cross-sectional view schematically showing a ceramic substrate constituting a wafer prober which is an example of a first group of semiconductor manufacturing / inspection apparatuses of the present invention.

FIG. 9 is a plan view schematically showing the ceramic substrate shown in FIG.

FIG. 10 is a cross-sectional view taken along line AA of the ceramic substrate shown in FIG.

FIG. 11 (a) is a cross-sectional view schematically showing a hot plate which is an example of a semiconductor manufacturing / inspection apparatus of the second group of the present invention, and (b) is a heat shield member shown in (a). It is a perspective view which shows typically the bottom part. FIG. 12 is a plan view of the hot plate shown in FIG.

FIG. 13A is a cross-sectional view schematically showing another embodiment of a hot plate which is an example of the semiconductor manufacturing / inspection apparatus according to the second group of the present invention, wherein the heat shield plate shown in FIG. It is a perspective view which shows typically.

FIG. 14 is a cross-sectional view schematically showing a hot plate which is an example of a semiconductor manufacturing / inspection apparatus of the third group of the present invention.

FIG. 15 is a plan view of the hot plate shown in FIG.

FIG. 16 is a cross-sectional view schematically showing another embodiment of a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the third group of the present invention.

FIGS. 17 (a) to 17 (d) are cross-sectional views schematically showing a part of a method for manufacturing a hot plate which is an example of a second group of semiconductor manufacturing / inspection apparatuses of the present invention. Explanation of reference numerals

2, 40, 70, 90 Support container

2a bottom

3, 3 1, 5 3, 6 1, 1 1 1, 1 2 1 Ceramic substrate

4 Opening

5 Insertion sleeve

6, 3 6 Lead wire

7 Lead wire outlet hole

8 Seenore

1 0, 3 2, 5 1, 6 6 Resistance heating element

1 1, 3 5 Through hole

1 2 External terminal

1 4 Insulation ring

1 6 Support step

1 7 Refrigerant supply pipe

1 8 Refrigerant discharge pipe

2 1 Lock ring 2 2 Body

2 9 Pessier

3 3 Conductive wire

3 4 Hole with bottom

3 7 Temperature measuring element

3 8 Bag hole

3 9, 5 4 Snorrejo

4 1 Outer frame

4 2, 7 2 Cylindrical part

4 3, 7 3 PCB receiver

4 4, 7 4 Heat shield plate receiver

4 6, 8 6, 9 6 Heat shield

4 7, 7 7 Connecting member

5 2 Chip-top conductor layer

5 6 Guard electrode

5 7 Ground electrode

5 8 groove

5 9 Suction hole Detailed disclosure of the invention

First, a first group of semiconductor manufacturing / inspection apparatuses of the present invention will be described with reference to FIGS.

A first group of semiconductor manufacturing / inspection apparatuses of the present invention is a semiconductor manufacturing / inspection apparatus in which a ceramic substrate having a resistance ripening body is arranged in an opening of a bottomed support container, It is characterized in that the container is formed with a refrigerant supply pipe for communicating the inside and the outside thereof.

A hot plate 1 which is a specific example of the semiconductor manufacturing / inspection apparatus shown in FIGS. 1 and 2 includes a support container 2 and a ceramic substrate 3 as main components.

The support container 2 is a bottomed metal member (here, an aluminum member), A circular opening 4 is formed in the upper part. A pin insertion sleeve 5 through which a lifter pin (not shown) is inserted is provided at three locations in the center of the bottom 2 a of the support container 2. These lifter pins raise and lower the silicon wafer W while supporting the silicon wafer W at three points. In the outer peripheral portion of the bottom 2a, a lead wire drawing hole 7 for inserting a lead wire 6 for supplying a current to the ceramic substrate 3 is formed.

In the hot plate 1 of the present embodiment, the silicon wafer W to which the photosensitive resin has been applied is 200 to 300. Used as a low-temperature hot plate for drying at C. The ceramic substrate 3 having the resistance heating element 10 provided on the bottom surface 3b is placed in the opening 4 of the support container 2 via a heat insulating ring 14 to be described later. By providing the heat insulating ring 14, a substantially closed space S 1 is formed between the inner surface of the support container 2 and the bottom surface of the ceramic substrate 3.

As shown in FIG. 1, the ceramic substrate 3 has a circular shape and is designed to have a diameter slightly smaller than the outer dimensions of the support container 2. The resistance heating element 10 is formed concentrically or spirally on the bottom surface 3 b of the ceramic substrate 3. In the center of the ceramic substrate 3, through holes 11 are formed at three places corresponding to the respective pin insertion sleeves.

The material of the ceramic substrate 3 constituting the first group of semiconductor manufacturing / inspection apparatuses of the present invention is not particularly limited, and examples thereof include a nitride ceramic, a carbide ceramic, and an oxide ceramic.

Examples of the nitride ceramic include metal nitride ceramics such as aluminum nitride, silicon nitride, and boron nitride.

Examples of the carbide ceramic include metal carbide ceramics, for example, silicon carbide, zirconium carbide, tantalum carbide, and the like.

Examples of the oxide ceramic include metal oxide ceramics, for example, alumina, zirconia, cordierite, mullite, and the like.

These ceramics may be used alone or in combination of two or more. Among these ceramics, nitride ceramics and carbide ceramics are more preferable than oxide ceramics. This is because the thermal conductivity is high. Aluminum nitride is the most preferable among the nitride ceramics. This is because the thermal conductivity is as high as 18 OW / m · K.

Further, the ceramic material may contain a sintering aid. Examples of the sintering aid include alkali metal oxides, alkaline earth metal oxides, and rare earth oxides. Among these sintering _{aids, C a O, Y 2 0} 3, N a 2 0, L i 2 0, R b 2 0 is preferable. The content of these is preferably 0.1 to 10% by weight. Further, it may contain alumina.

The resistance heating element 10 is formed by baking a conductive paste on a ceramic substrate 3 which is a sintered body. As the conductor base, those containing metal particles, metal oxides, resins, solvents and the like are generally used. Suitable metal particles used for the conductor paste include, for example, gold, silver, platinum, palladium, bell, tungsten, nickel and the like. This is because these metals are relatively difficult to oxidize even when exposed to high temperatures, and have sufficient resistance to generate heat when energized. Suitable metal oxides used for the conductor paste include, for example, lead oxide, zinc oxide, silica, boron oxide, alumina, yttria, titania and the like.

As shown in FIG. 2, an external terminal 12 made of a conductive material is soldered to an end 10 a of the resistance heating element 10. As a result, electrical continuity between the external terminal 12 and the resistance heating element 10 is achieved. On the other hand, a socket 6 a at the end of the lead wire 6 is fitted to the end of the external terminal 12. Therefore, current is supplied to the resistance heating element 10 via the lead wire 6 and the external terminal 12, and as a result, the temperature of the resistance heating element 10 increases, and the entire ceramic substrate 3 is heated.

As shown in FIG. 2, a plurality of screw holes 13 are provided at equal intervals in the upper edge of the opening 4 of the support container 2. Similarly, on the upper edge of the opening 4, a maturing ring 14 is provided. The heat insulating ring 14 has an annular shape, and has a size substantially equal to the size of the opening 4. As a material for forming the heat insulating ring 14, for example, an elastic material such as resin or rubber is preferable. A plurality of screw holes 15 are provided at positions corresponding to the screw holes 13 in the heat insulating ring 14. On the inner peripheral surface of the heat insulating ring 14, a support step 16 for horizontally supporting the outer peripheral portion of the bottom surface of the ceramic substrate 3 is provided at all stations. And is formed over a long distance. When the ceramic substrate 3 is supported on the supporting step 16, the height of the upper end surface of the heat insulating ring 14 and the height of the heating surface of the ceramic substrate 3 are substantially the same.

The heat insulating ring 14 in the present embodiment seals a gap formed between the upper edge of the opening 4 of the support container 2 and the outer peripheral portion of the bottom surface of the ceramic substrate 3, thereby preventing air from flowing through the gap. Have a role to do.

As shown in FIGS. 1 and 2, a locking ring 21 is fixed to a heating surface of the ripening ring 14 with a screw 25. The locking ring 21 has an annular main body 22, a plurality of screw holes 23, and a plurality of locking pieces 24. The ceramic substrate 3 set on the supporting step 16 is pressed by the respective locking pieces 24 from the plate thickness direction, so that the ceramic substrate 3 is clamped and fixed to the heat insulating ring 14.

As shown in FIG. 1, a coolant supply pipe 17 and a coolant discharge pipe 18 are provided at the bottom 2 a of the support container 2 using bolts or the like. Two refrigerant supply pipes 17 and two refrigerant discharge pipes 18 are formed. In the present embodiment, the coolant supply pipes 17 are juxtaposed substantially at the center of the bottom 2a. Further, each refrigerant discharge pipe 18 is arranged at a position separated from the refrigerant supply pipe 17 with each refrigerant supply pipe 17 interposed therebetween. That is, each refrigerant discharge pipe 18 is disposed at a position separated from each refrigerant supply pipe 17 in both end directions of the bottom 2a. The refrigerant supply pipe 17 and the refrigerant discharge pipe 18 have flow paths that open on both the inner end face and the outer end face. For this reason, the inside and outside of the support container 2 are communicated through the flow path.

A female screw groove is formed on the inner peripheral surface of the opening on the outer end face side of the refrigerant supply pipe 17, and one end of a fluid supply pipe (not shown) is detachable from the opening. Since the other end of this pipe is connected to a gas pressure pump, air as a cooling medium is supplied through the pipe. On the other hand, a female screw groove is also formed on the inner peripheral surface of the opening on the outer end surface side of the refrigerant discharge pipe 18. The air in the support container 2 is discharged outside through this pipe. In addition, the other end of the above-mentioned pipe is opened at a place somewhat away from the apparatus.

As shown in FIG. 2, a seal packing 8 is attached to the above-mentioned lead wire outlet hole 7. This seal packing 8 has an annular shape and is made of rubber or the like. It is formed of a suitable elastic body. Each lead wire 6 is inserted into the through hole of the seal packing 8 and then drawn out of the support container 2. In other words, the seal packing 8 in the present embodiment has a role of sealing the gap formed between each lead wire 6 and the lead wire drawing hole 7 to prevent air from flowing through the gap. .

Next, a method of using the semiconductor manufacturing / inspection apparatus 1 will be described.

The silicon wafer W coated with the photosensitive resin is placed on the hot plate 3, and the resistance heating element 10 is energized in this state. Then, the temperature of the silicon wafer W gradually increases due to the contact with the heated ceramic substrate 3. When the photosensitive resin is sufficiently dried by heating for a predetermined time, the power supply to the resistance pattern 10 is stopped.

Here, the gas pressure pump is driven to supply cooling air to the refrigerant supply pipe 17 side, and the air is introduced into the closed space S1 via the refrigerant supply pipe 17. The air discharged through the refrigerant supply pipe 17 flows toward the refrigerant discharge pipe 18 while contacting the entire bottom surface side of the ceramic substrate 3 in the closed space S1. At that time, the heat removes the heat of the ceramic substrate 3 substantially uniformly as a whole. The air whose temperature has risen due to the removal of heat flows out of the space again through the refrigerant discharge pipe 18 and is discharged into another space free from contamination. Note that a series of air flows is schematically indicated by thick arrows in FIG. Then, when the ceramic substrate 3 is cooled down to a somewhat low temperature, the silicon wafer W is removed from the ceramic substrate 3.

In the above, the first group of semiconductor manufacturing inspection apparatuses according to the present invention have been described using a hot plate as a specific example. However, the first group of semiconductor manufacturing inspection apparatuses according to the present invention are provided inside or at the bottom of a ceramic substrate. As long as the resistance heating element is formed, an electrostatic chuck or a wafer probe may be used.

According to the first group of semiconductor manufacturing and inspection apparatuses of the present invention, the following effects can be obtained.

(1) In this semiconductor manufacturing / inspection apparatus, two refrigerant supply pipes 17 are formed at the bottom 2 a of the support container 2. Therefore, cooling air can be circulated from the refrigerant supply pipe 17 into the closed space S1 in the support container 2. And this air is The ceramic substrate 3 can be forcibly cooled by contacting the entire bottom surface of the mic substrate 3. For this reason, the ceramic substrate 3 can be cooled in a shorter time than in the case of cooling, and the entire hot plate 3 can be uniformly cooled in a short time.

(2) In this semiconductor manufacturing / inspection apparatus, each refrigerant supply pipe 17 is provided at the bottom of the support container 2.

2 Formed in a. Therefore, the air circulated from the refrigerant supply pipe 17 into the support container 2 can be blown perpendicularly to the bottom surface of the ceramic substrate 3. Therefore, the ceramic substrate 3 can be cooled in a relatively short time.

(3) Since the two coolant supply pipes 17 are formed, the air can uniformly contact the entire hot plate 3, and the ceramic substrate 3 can be cooled uniformly.

(4) In this semiconductor manufacturing / inspection apparatus, the substantially closed space S1 is formed between the support container 2 and the ceramic substrate 3 as described above. Although protrusions such as the external terminals 12 are present on the bottom surface side of the ceramic substrate 3, they are arranged in a space S 1 formed between the support container 2 and the ceramic substrate 3. That is, the projection is not exposed to the outside of the device, and is in a so-called protected state. Therefore, regardless of the presence of the protrusion, the bottom surface of the support container 2 can be attached to the support stage (not shown) without difficulty.

(5) The space S1 formed between the support container 2 and the ceramic substrate 3 is substantially sealed, so that air can flow therethrough. For this reason, it becomes possible to forcibly cool the ceramic substrate 3 by the flow of air to the space S 1 內, and the time required for cooling can be reduced as compared with the case of cooling. Therefore, if this semiconductor manufacturing / inspection apparatus is used, the time required for one drying process can be shortened without fail, and the productivity can be improved. Further, since the refrigerant supply pipe and the like are relatively inexpensive, productivity can be improved at low cost. Since the space S 1 is not closed but is substantially closed, air does not easily leak to the outside of the device, and there is no risk of contaminating the surroundings.

(6) In the present embodiment, a refrigerant supply pipe 17 and a refrigerant discharge pipe 18 for communicating the inside and outside of the support container 2 are provided, respectively. Therefore, via both tubes 17 and 18 By efficiently circulating the air in the closed space S1, the ceramic substrate 3 can be forcibly cooled and returned to a low temperature in a relatively short time.

(7) In this semiconductor manufacturing / inspection apparatus, a heat insulating ring 14 is provided between the upper edge of the opening 4 of the support container 2 and the outer peripheral portion of the bottom surface of the ceramic substrate 3 to seal a gap in the portion. ing. Therefore, air leakage to the outside of the device through the gap between the support container 2 and the ceramic substrate 3 is prevented, and higher airtightness can be secured in the space S1. This contributes to ensuring the prevention of environmental contamination by air discharge.

Further, in the semiconductor manufacturing / inspection apparatus 1, a seal packing 8 is further provided in the wiring drawing hole 7 on the bottom 2a, and the lead wire 6 is inserted through the through hole. Therefore, air leakage to the outside of the device through the wiring lead-out hole 7 is prevented, and a higher airtightness can be ensured by the space S1. This also contributes to the prevention of surrounding pollution by air discharge.

Note that the first group of embodiments of the present invention may be modified as follows.

(a) If a certain degree of hermeticity is ensured, omit the insulating ring 14 and screw the locking ring 21 directly to the heating surface of the opening 4 of the support container 2, and in this state The ceramic substrate 3 may be attached to the opening 4. That is, the ceramic substrate 3 may be directly attached to the support container 2.

(b) In the above embodiment, the space between the support container 2 and the ceramic substrate 3 is the closed space S1. However, this space need not necessarily be sealed. In this case, since the air supplied from each refrigerant supply pipe 17 is naturally discharged to the outside, each refrigerant discharge pipe 18 can be omitted. For example, as shown in FIG. 3, each refrigerant discharge pipe 18 may be omitted, and an opening 27 may be provided at the bottom 2a. In this way, the structure of the semiconductor manufacturing / inspection apparatus 1 can be simplified, and the manufacturing cost can be reduced.

(c) In the above embodiment, two refrigerant supply pipes 17 are provided at the bottom 2 a of the support container 2. However, the number of the refrigerant supply pipes 17 may be increased to three or more. In this way, as the number of the refrigerant supply pipes 17 increases, the ceramic substrate 3 can be cooled in a shorter time, and the ceramic substrate 3 can be cooled more uniformly. The same applies to the number of refrigerant discharge pipes 18. Thus, three or more may be provided.

(d) For example, as shown in FIG. 4 (a), the resistance heating element 10 is formed by dividing each of the resistance parts 102 to 104 into three parts. Change to provide independent power supply. That is, by dividing the resistance pattern 10 into three, a circuit for generating heat in the resistance pattern 10 is divided into three. In this case, three heating regions A1 to A3 are formed on the ceramic substrate 3 as indicated by hatching in FIG. 4 (b).

Then, as shown in FIG. 4 (b), a plurality (three in this embodiment) of refrigerant supply pipes 17 and refrigerant discharge pipes 18 are provided for each of the heat generating areas A1 to A3. Note that, in the figure, each of the refrigerant supply pipes 17 and each of the refrigerant discharge pipes 18 arranged in the same areas A1 to A3 are arranged at positions that are the vertices of an equilateral triangle.

In this way, the temperature can be controlled by the ON / OFF operation of each circuit. In addition, since the cooling air can be blown to each of the heat generating regions A1 to A3 for cooling, the ceramic substrate 3 can be cooled more uniformly.

In addition, each refrigerant supply pipe 17 and each refrigerant discharge pipe 18 are not limited to positions at the vertices of an equilateral triangle, and may be disposed at any positions.

The number of pipes 17 and 18 in the same area is not limited to three, but at least one. That is, it is sufficient that at least one of the tubes 17 and 18 is provided for each of the heat generating areas A1 to A3.

Further, the number of divided circuits is not limited to three, but may be two or four or more. In this case, the total number of refrigerant supply pipes 17 may be at least 70% of the total number of divided circuits, and one or more refrigerant supply pipes 17 are necessarily provided for one circuit. No need. That is, when the number of circuits is 4, three or more refrigerant supply pipes 17 may be provided, and when the number of circuits is 10, seven or more refrigerant supply pipes may be provided. .

(e) The lead-out hole 7 serving as a wiring lead-out portion may be provided in a place other than the bottom 2 a of the support container 2, for example, in a side wall of the support container 2.

(f) In the closed space S1 defined by the support container 2, air other than air (air) For example, an inert gas such as carbon dioxide or nitrogen can be distributed as a cooling fluid. In addition, as long as the liquid does not adversely affect the electrical configuration, the liquid may be allowed to flow as a cooling fluid.

(f) A thermocouple may be embedded in the ceramic substrate 3 as needed. This is because the temperature can be controlled by measuring the temperature of the ceramic substrate 3 with a thermocouple and changing the voltage and current values based on the data. In this case, it is preferable that the lead wire of the thermocouple is also drawn out through the seal packing 8.

It is desirable that the first group of ceramic substrates for a semiconductor device according to the present invention have a brightness of N4 or less as a value based on the provisions of JIS Z8721. This is because a material having such brightness has excellent radiation heat quantity and concealing property. In addition, such a ceramic substrate can accurately measure the surface temperature by means of the thermoviewer.

Here, the lightness N is defined as 0 for the ideal black lightness, 10 for the ideal white lightness, and the lightness of the color between these black lightness and white lightness. Each color is divided into 10 so that the perception is at the same rate, and displayed with the symbols NO to N10.

The actual measurement is performed by comparing the color charts corresponding to N0 to N10. In this case, the first decimal place is 0 or 5.

A ceramic substrate having such properties can be obtained by including 50 to 500 ppm of carbon in the ceramic substrate. There are two types of carbon, amorphous and crystalline.Amorphous carbon can suppress a decrease in the volume resistivity of a ceramic substrate at a high temperature. Since the decrease in the thermal conductivity of the ceramic substrate at a high temperature can be suppressed, the type of force can be appropriately selected according to the purpose of the substrate to be manufactured.

As an amorphous carbon, for example, a hydrocarbon consisting of only C, H, and O, preferably a saccharide can be obtained by calcining in air, and as a crystalline carbon, Graphite powder or the like can be used.

In addition, carbon can be obtained by thermally decomposing the acrylic resin in an inert atmosphere (nitriding gas, argon gas) and then ripening and pressurizing. However, it is necessary to change the acid value of this acryl resin. Adjust the degree of crystallinity (amorphousness) Can be.

The first group of ceramic substrates for semiconductor devices of the present invention preferably have a disk shape, a diameter of 20 mm or more is desirable, and a diameter of 250 mm or more is optimal.

Disc-shaped ceramic substrates for semiconductor devices are required to have uniform temperature, but the larger the diameter of the substrate, the more likely the temperature will be non-uniform.

The thickness of the first group of ceramic substrates for a semiconductor device of the present invention is preferably 50 mm or less, more preferably 20 mm or less. Also, 1 to 10 mm is optimal.

If the thickness is too thin, warping at high temperatures is likely to occur, and if it is too thick, the heat capacity becomes too large and the temperature rise / fall characteristics deteriorate.

The porosity of the first group of ceramic substrates for a semiconductor device of the present invention is desirably 0 or 5% or less. This is because a decrease in thermal conductivity at high temperatures and the occurrence of warpage can be suppressed.

The first group of ceramic substrates for semiconductor devices of the present invention can be used at 200 or more.

In the semiconductor manufacturing / inspection apparatus of the first group of the present invention, it is desirable to embed a thermocouple in a bottomed hole formed in the ceramic substrate. This is because the temperature of the resistance heating element can be measured with a thermocouple, and the temperature can be controlled by changing the voltage and current based on the data.

The size of the joining portion of the metal wires of the thermocouple is preferably equal to or larger than the wire diameter of each metal wire and 0.5 mm or less. With such a configuration, the heat capacity of the junction is reduced, and the temperature is accurately and quickly converted to a current value. Therefore, the temperature controllability is improved and the temperature distribution on the heated surface of the wafer is reduced.

Examples of the thermocouples include K-type, R-type, B-type, E-type, J-type, and T-type thermocouples, as described in JIS-C-162 (1980). Can be

In the first group of semiconductor manufacturing / inspection apparatuses of the present invention comprising a hot plate and the like, the resistance heating elements embedded in the ceramic substrate are metals such as noble metals (gold, silver, platinum, palladium), tungsten, molybdenum, nickel, and the like. Alternatively, it is desirable to be made of a conductive ceramic such as tungsten or molybdenum carbide. The resistance itself can be increased, and the thickness itself must be increased in order to prevent disconnection, etc. This is because they are not easily oxidized and the aging conductivity is hardly lowered. These may be used alone or in combination of two or more.

In addition, since the resistance heating element needs to make the temperature of the entire ceramic substrate uniform, a concentric pattern as shown in Fig. 12 or a combination of a concentric pattern and a bent line pattern is required. preferable. The thickness of the resistance heating element is

It is preferably from 1 to 50 μπι, and the width is preferably from 5 to 2 O mm.

The resistance value can be changed by changing the thickness and width of the resistance heating element, but this range is the most practical. The resistance value of the resistance ripening body is thin, and the resistance value increases as it becomes thinner.

When a resistance heating element is provided inside as shown in Fig. 13, the distance between the heating surface and the resistance heating element becomes shorter, and the uniformity of the surface temperature decreases. We need to increase the width. In addition, since the resistance heating element is provided inside the ceramic substrate, there is no need to consider adhesion to nitride ceramics or the like. In addition, when the resistance heating element is provided on the surface (bottom surface), the distance between the heating surface and the resistance heating element is increased, and the uniformity of the surface temperature can be improved. In addition, since the heat exchange can be achieved by bringing the cooling medium into direct contact with the resistor, rapid cooling can be achieved.

The resistance heating element may have a cross section of any of a square, an ellipse, a spindle, and a spheroid, but is desirably flat. This is because the flattened surface can easily radiate heat toward the heated surface, so that the amount of heat transmitted to the heated surface can be increased, and the temperature distribution on the ripened surface is difficult to achieve. Note that the resistance heating element may have a spiral shape.

Further, it is desirable that the resistance heating element is formed in an area of up to 50% in the thickness direction from the bottom surface. This is to prevent the occurrence of temperature distribution on the heating surface and to uniformly heat the semiconductor wafer.

In order to form a resistance heating element on the bottom or inside of the ceramic substrate, it is preferable to use a conductive paste made of metal or conductive ceramic.

In other words, when a resistance heating element is formed on the bottom surface of a ceramic substrate, baking is usually performed to produce the ceramic substrate, and then the above-mentioned conductive paste layer is formed on the surface of the ceramic substrate, followed by baking, thereby producing a resistance heating element. Form the body. On the other hand, when forming a resistance heating element inside the ceramic substrate, the above-mentioned conductive paste layer was formed on the Darling sheet. Thereafter, the green sheet is laminated and fired to form a resistance heating element inside. The conductive paste is not particularly limited, but preferably contains a resin, a solvent, a thickener, or the like containing metal particles or conductive ceramic particles in order to secure conductivity.

Examples of the material of the metal particles and the conductive ceramic particles include those described above. The metal particles or conductive ceramic particles preferably have a particle size of 0.1 to 100 m. If it is too small, less than 0.1 / im, it is liable to be oxidized, while if it exceeds 100 μΐη, sintering becomes difficult and the resistance value becomes large.

The shape of the metal particles may be spherical or scaly. When these metal particles are used, they may be a mixture of the sphere and the flakes. When the metal particles are flakes or a mixture of spheres and flakes, the metal oxide between the metal particles is easily retained, and the adhesion between the resistance heating element and the ceramic substrate is ensured. This is advantageous because the resistance value can be increased. Examples of the resin used for the conductor paste include an acrylic resin, an epoxy resin, and a phenol resin. Examples of the solvent include isopropyl alcohol and the like. Examples of the thickener include cellulose and the like. When a conductor paste for a resistance heating element is formed on the surface of a ceramic substrate, a metal oxide is added to the conductor paste in addition to the metal particles, and the metal particles and the metal oxide are sintered. It is preferable to have it. Thus, by sintering the metal oxide together with the metal particles, the ceramic substrate and the metal particles can be more closely adhered.

It is not clear why mixing the above metal oxide improves the adhesion to the ceramic substrate, but the surface of metal particles and the surface of a ceramic substrate made of non-oxide are slightly oxidized. It is considered that the oxide film is formed by sintering and integrating the oxide films via the metal oxide, and the metal particles and the ceramic adhere to each other. When the ceramic constituting the ceramic substrate is an oxide, the surface is naturally made of an oxide, so that a conductor layer having excellent adhesion is formed.

Examples of the metal oxide include lead oxide, zinc oxide, silica, and boron oxide (Β 0 ₃ ), at least one selected from the group consisting of α / remina, yttria and titania is preferred.

This is because these oxides can improve the adhesion between the metal particles and the ceramic substrate without increasing the resistance value of the resistance heating element.

The lead oxide, zinc oxide, silica, boron oxide (B ₂ 0 _3), alumina, yttria, the proportion of titania, when the total amount of the metal oxide and 1 0 0 parts by weight, a weight ratio of lead oxide 1-10, silica 1-30, boron oxide 5-50, zinc oxide 20-70, alumina 1-10, yttria :! ~ 50, Titania :! 550, and the total is preferably adjusted so as not to exceed 100 parts by weight.

By adjusting the amounts of these oxides in these ranges, the adhesion to the ceramic substrate can be particularly improved.

The amount of the metal oxide added to the metal particles is preferably from 0.1% by weight to less than 10% by weight. Further, when the resistance heating element is formed using the conductor paste having such a configuration, the area resistivity is preferably 1 to 45 πιΩΩ.

When the sheet resistivity exceeds 45 ιη Ω, the amount of heat generation becomes too large with respect to the applied voltage, and in a ceramic substrate for a semiconductor device provided with a resistive heating element on the surface, the amount of ripening is controlled. Because it is difficult. If the addition amount of the metal oxide is 10% by weight or more, the sheet resistivity exceeds 5ΖιηΩΩ opening, and the calorific value becomes too large to make temperature control difficult, resulting in temperature distribution. become.

When the resistance heating element is formed on the surface of the ceramic substrate, a metal coating layer is preferably formed on the surface of the resistance heating element. This is to prevent the resistance value from changing due to oxidation of the internal metal sintered body. The thickness of the metal coating layer to be formed is preferably 0.1 to 10 / zm.

The metal used for forming the metal coating layer is not particularly limited as long as it is a non-oxidizing metal, and specific examples thereof include gold, silver, palladium, platinum, and nickel. These may be used alone or in combination of two or more. Of these, nickel is preferred.

If the resistance heating element is formed inside the ceramic substrate, the resistance heating No coating is required because the surface is not oxidized.

Next, a first group of technical ideas of the present invention grasped by the above-described embodiments will be enumerated below.

(1) In the first group of semiconductor manufacturing / inspection apparatuses of the present invention, the heat insulating ring provided between the support container and the hot plate is a heat insulating ring having a plate supporting step on the inner peripheral edge. It is desirable that the support container is screwed to the opening heating surface.

(2) In the first group of semiconductor manufacturing / inspection apparatuses of the present invention, it is preferable that the seal structure provided in the wiring lead-out section is an annular seal packing made of an elastic body. This makes it difficult for a gap to be formed between the wiring inserted through the seal packing and the wiring lead-out portion, thereby more reliably preventing leakage of fluid to the outside of the device and improving the sealing performance.

(3) In the semiconductor manufacturing / inspection apparatus of the first group of the present invention, the fluid is desirably air. As a result, it has low reactivity, there is no fear of short-circuit between resistors, and it is also advantageous for low cost.

(4) In the semiconductor manufacturing / inspection apparatus of the first group of the present invention, it is desirable that the support container is formed with a refrigerant discharge pipe for discharging the fluid in the support container to the outside. The fluid supplied into the support container can be made to flow out of the refrigerant discharge pipe to the outside. Therefore, the hot plate can be cooled in a shorter time.

As described above, a hot plate has been described as an example of the semiconductor manufacturing and inspection apparatus of the first group of the present invention. As a specific example of the semiconductor manufacturing and inspection apparatus of the first group of the present invention, In addition, for example, an electrostatic chuck, a wafer propper, a susceptor and the like can be mentioned.

The above-mentioned hot plate (ceramic heater) is a device in which only a resistance heating element is provided on the surface or inside of a ceramic substrate, whereby a heated object such as a semiconductor wafer can be heated to a predetermined temperature.

On the other hand, when an electrostatic electrode is provided as a conductive layer inside a ceramic substrate constituting the semiconductor manufacturing / inspection apparatus of the first group of the present invention, it functions as an electrostatic chuck. As the metal used for the above-mentioned electrostatic electrode, for example, noble metals (gold, silver, platinum, palladium), tungsten, molybdenum, nickel and the like are preferable. Examples of the conductive ceramic used for the electrostatic electrode include carbides of tungsten and molybdenum. These may be used alone or in combination of two or more.

FIG. 5A is a longitudinal sectional view schematically showing a ceramic substrate used for an electrostatic chuck, and FIG. 5A is a sectional view taken along line AA of the ceramic substrate shown in FIG.

In this ceramic substrate for electrostatic chuck, chuck positive and negative electrode layers 62 and 63 are buried inside the ceramic substrate 61 and connected to through holes 680 respectively, and a ceramic dielectric film is formed on the electrode. 6 4 are formed.

On the other hand, inside the ceramic substrate 61, a resistance heating element 66 and a through hole 68 are provided so that an object to be heated such as a silicon wafer 29 can be heated. Note that an RF electrode may be buried in the ceramic substrate 61 as necessary.

Also, as shown in (b), the ceramic substrate 61 is usually formed in a circular shape in plan view, and the semi-circular portion 62 a shown in (b) is formed inside the ceramic substrate 61. The chuck positive electrode electrostatic layer 62 composed of the comb teeth 62 b and the chuck negative electrostatic layer 63 also composed of the semi-circular part 63 a and the comb teeth 63 b are combined with each other. They are arranged to face each other so as to intersect 6 2 b and 6 3 b.

The ceramic substrate having such a configuration is fitted into a support container having substantially the same structure and function as the support container 2 shown in FIG. 1, and operates as an electrostatic chuck. At this time, the plus side and one side of the wiring extending from the DC power supply in the control device are connected to the chuck positive electrode electrostatic layer 62 and the chuck negative electrode electrostatic layer 63, and a DC voltage is applied.

As a result, the semiconductor wafer mounted on the electrostatic chuck is electrostatically attracted and various processing can be performed on the semiconductor wafer.

FIGS. 6 and 7 are horizontal cross-sectional views schematically showing electrostatic electrodes of a ceramic substrate constituting another electrostatic chuck. In the ceramic substrate for an electrostatic chuck shown in FIG. 6, a ceramic substrate is used. A semi-circular chuck positive electrode electrostatic layer 1 12 and a chuck negative electrode electrostatic layer 1 13 are formed in the inside of 111, and the ceramic for the electrostatic chuck shown in Fig. 7 is formed. For the chuck substrate, the chuck positive electrode electrostatic layers 1 2 2 a and 1 2 b and the chuck negative electrode electrostatic layers 1 2 3 a and 1 2 3 b are formed by dividing a circle into four inside the ceramic substrate 12 1. Are formed. The two positive electrode electrostatic layers 122a and 122b and the two chuck negative electrode electrostatic layers 123a and 123b are formed to intersect, respectively.

When an electrode in the form of a circular or divided electrode is formed, the number of divisions is not particularly limited, and may be five or more, and the shape is not limited to a sector. When a check top conductor layer is provided on the surface of a ceramic substrate constituting the first group of semiconductor manufacturing and inspection devices of the present invention and a guard electrode or a ground electrode is provided as an internal conductor layer, it functions as a wafer prober. .

FIG. 8 is a cross-sectional view schematically showing one embodiment of a ceramic substrate constituting a first group of the wafer probers of the present invention, FIG. 9 is a plan view thereof, and FIG.

FIG. 9 is a sectional view taken along line AA of the wafer prober shown in FIG.

In this wafer prober, a concentric groove 58 is formed on the surface of a ceramic substrate 53 having a circular shape in plan view, and a plurality of suction holes 59 for sucking a silicon wafer are formed in a part of the groove 58. A chuck top conductor layer 52 for connecting to an electrode of a silicon wafer is formed in a circular shape on most of the ceramic substrate 53 including the groove 58.

On the other hand, on the bottom surface of the ceramic substrate 53, a resistance heating element 51 having a concentric circular shape in a plan view is provided in order to control the temperature of the silicon wafer. Although not shown, external terminals are connected and fixed to both ends of the resistance heating element 51. Further, inside the ceramic substrate 53, a guard electrode 56 having a lattice shape as shown in FIG. 10 and a ground electrode 57 (not shown) are provided in order to remove stray capacitor noise. ing. Reference numeral 55 indicates an electrode non-formed portion. Such a rectangular electrode non-formed portion 55 is formed inside the guard electrode 56 so that the upper and lower ceramic substrates 53 sandwiching the guard electrode 56 are firmly bonded. It is.

The ceramic substrate having such a configuration is fitted into a support container having a structure substantially similar to that shown in FIG. 1, and operates as a wafer prober.

In this wafer prober, an integrated circuit is formed on a ceramic substrate 53. After the recon wafer is mounted, a continuity test can be performed by pressing a probe force with tester pins against the silicon wafer and applying a voltage while heating and cooling. Next, the second group of the present invention will be described.

A second group of the present invention is a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-shaped member connected and fixed to the outer frame portion. Is a supporting container having a plurality of openings formed therein, and a semiconductor manufacturing / inspection apparatus using the same is also one of the first inventions of the second group.

A second group of the present invention is a support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-shaped body connected and fixed to the outer frame portion, Weight M (kg) and ceramic substrate diameter L (mm)

This is a support container characterized in that it is 200, and is one of the second inventions of a second group of semiconductor manufacturing / inspection apparatuses using the same.

The reason why the supporting container is formed in this way is to increase the temperature reduction rate of the semiconductor manufacturing / inspection apparatus, and any of the above-mentioned inventions has both of the above two requirements. Is preferred. Other configurations are substantially the same.

Therefore, in the following, the above two inventions will be summarized and described as one invention.

FIG. 11 (a) is a longitudinal sectional view schematically showing a hot plate which is an example of the semiconductor manufacturing / inspection apparatus of the second group of the present invention, and (b) is a heat shield member (heat shield plate). It is a perspective view which shows the bottom part of FIG. FIG. 12 is a plan view of the semiconductor manufacturing / inspection apparatus shown in FIG.

For example, as shown in FIG. 11, this hot plate includes a ceramic substrate 3 and a supporting container 90, and a plurality of concentric resistances in plan view are provided on the surface (bottom surface) of the disk-shaped ceramic substrate 3. A heating element 10 is formed, and a bottomed hole 34, a through hole 11 and the like are formed. In order to measure the temperature of the ceramic substrate 3, a temperature measuring element 37 connected to a lead wire 36 is embedded in the bottomed hole 34. I have.

The ceramic substrate 3 is fitted on the upper portion of a substantially cylindrical support container 90 via an insulating ring 14 having an L-shaped cross section.

The support container 90 is provided with a ring-shaped substrate receiving portion 93 that supports the ceramic substrate 3 and the heat insulating ring 14 inside the substantially cylindrical outer frame portion 91. The heat insulation ring 14 and the ceramic substrate 3 are fixed by a substrate receiving portion 93 and a fixing bracket 97 via a bolt 98. In other words, the fixing bracket 97 is attached to the bolt 98, and the ceramic substrate 3 and the like are pressed and fixed.

Further, a heat shielding member (heat shielding plate) 96 for preventing heat radiation is connected and fixed to the outer frame portion 91. The heat shield member (heat shield plate) 96 may be fixed via a port or the like, may be integrally formed with the outer frame portion 91, or may be fixed by welding or the like.

As shown in FIG. 11, the heat shield plate 96 is not necessarily a plate-like body, but may be a bottomed cylindrical member in which the plate-like body and the cylindrical member are integrated.

Note that a control device containing a control device, a power supply, and the like is present below the support container 90, and the conductive wire 6 and the lead wire 36 are connected to the control device in the control device.

Normally, precision instruments are sensitive to high temperatures, so when using a hot plate, it is necessary to shield the radiant heat from the ceramic substrate 3 and protect the control device containing the precision instruments and the like. Therefore, a heat shield plate 96 is provided between the control device and the ceramic substrate 3. In addition, heat radiating fins may be interposed between the control device and the hot plate, if necessary.

At this time, by using a hot plate having such a configuration, the temperature and the like of the ceramic substrate 3 can be accurately controlled, and the silicon wafer W can be uniformly heated to a target temperature. The above controller is also protected from the heat of the hot plate, and can operate normally.

In the present embodiment, the outer frame portion 91 and the heat shield plate 96 are made of a metal, specifically, at least one metal selected from stainless steel, aluminum, copper, steel, nickel, and a noble metal. It is desirable. Metals have high thermal conductivity and low specific heat, so they are easy to cool, and radiant heat does not hinder the cooling of the ceramic substrate 31. is there.

In the second group of the present invention, the thickness of the members (the outer frame portion 91 and the heat shield plate 96) constituting the support container 90 is preferably 0.1 to 5 mm. If it is less than 0.1 mm, the strength will be poor, and if it exceeds 5 mm, the heat capacity will increase.

Outer frame 91, heat shield 96, heat insulating ring (heat insulating material) 14, bolt 98, fixing bracket 97, refrigerant supply pipe (cooling medium supply port) 17, total weight of support vessel, ie total weight of supporting container M (kg) is a function of the diameter L (mm) of the ceramic substrate and is ML / 200. When M exceeds L / 200, the heat capacity increases, and the outer frame 91, heat shield 96, heat insulation ring 14, bolts 98, fixing bracket 97, refrigerant supply pipe (cooling medium supply port) This is because radiant heat is generated from 17 and the like, and reflection is generated on the ceramic substrate 3, which hinders a temperature decrease of the ceramic substrate 3.

If the diameter L of the ceramic substrate 3 is 8 inches (L = 200 mm), M = 1 kg is the upper limit, and if L is 12 inches (L = 300 mm), M is 1.5 kg. .

The relationship between the projected area SA of the heat shield plate 96 (that is, the area of the bottom when there is no opening) and the total area S of the openings provided in the plate-like body is 0.03 ≦ SZSA.

If the total area of the openings is less than 3%, it becomes difficult to discharge the cooling medium that has exchanged heat with the ceramic substrate, and the heat capacity of the heat shield plate also increases.

The diameter (average diameter or length of one side in the case of an ellipse or a square) of one opening 96a is preferably 1 to 50 mm. If the diameter of the opening 96a is less than 1 mm, it is difficult to discharge the cooling medium, and if it exceeds 50 mm, it does not function as a heat shield. The openings 96a are desirably arranged evenly on the heat shield plate as shown in FIG. 11 (b). In the second group of semiconductor manufacturing and inspection equipment (hot plates) of the present invention, the resistive heating elements 10 are provided on the bottom surface as described above. The terminal 12 is connected via a solder layer, and a socket 6 a having a conductive wire 6 is attached to the external terminal 12. A through hole 11 for inserting a lifter pin (not shown) is formed in a portion near the center of the ceramic substrate 3, and a pin insertion sleeve 5 communicating with the through hole 11 is provided with a heat shield plate. Installed on 9 6 I have.

The support container 90 includes a substantially cylindrical outer frame portion 91, and an annular substrate receiving portion 93 provided inside the outer frame portion 91, and these are integrally formed. . Further, on the bottom surface of the outer frame part 91, a bottomed cylindrical heat shield member (heat shield plate 96) is installed.

The substrate receiving portion 93 supports the ceramic substrate 3 fitted via the heat insulating ring 14.

Further, the heat shield plate 96 is provided with a refrigerant supply pipe 17 so that cooling air or the like can be introduced when the ceramic substrate 3 is cooled. A large number of apertures 96a are provided for discharging the gas.

Therefore, after the ceramic substrate 3 is heated, a cooling medium is supplied from the refrigerant supply pipe 17 and is discharged from the opening 96a, and the ceramic substrate 3 is cooled, whereby the ceramic substrate 3 can be rapidly cooled. it can.

The heat insulating ring 14 is preferably made of at least one resin selected from a polyimide resin, a fluororesin, and a benzoimidazole resin, or a fiber-reinforced resin. Examples of the fiber-reinforced resin include a resin in which glass fiber fibers are dispersed. Since the fiber-reinforced resin softens even when the temperature is raised and the ceramic substrate does not tilt, the separation distance can be accurately secured when the wafer is held and ripened from the heated surface.

When the semiconductor manufacturing inspection apparatus (hot plate) of the second group of the present invention is operated, the resistance heating element 10 generates heat and the ceramic substrate 3 rises in temperature, but the temperature measurement embedded in the ceramic substrate 3 is performed. The temperature of the ceramic substrate 3 is measured by the element 37, the measurement data is input to the control device, and the amount of applied voltage (current) is controlled, so that the temperature of the ceramic substrate 3 is controlled to a constant value.

FIG. 13 (a) is a cross-sectional view showing a hot plate according to another embodiment, and (b) is a perspective view schematically showing a heat shield plate, as shown in this hot plate. Further, a cylindrical portion 72 to which a radiation fin 72 d is attached may extend below the support container 70. By providing the radiation fins 72 d in this way, the hot plate can be cooled more quickly. In the apparatus shown in FIG. 13, the cylindrical portion 72 provided at the lower part of the support container 70 is provided with a heat radiation fin, so that the heat radiation fin is placed on the control device in which the control device and the power supply are stored. The hot plate can be installed via the. Then, the function of the radiation fins does not increase the temperature of the lower control device, but keeps it at a temperature close to normal temperature. The configuration of the hot plate shown in FIG. 13 will be described later in detail.

In the semiconductor manufacturing / inspection apparatus of the second group of the present invention, the resistance heating element embedded in the ceramic substrate has been described in the first group of the present invention, and the description thereof will be omitted here.

In the above description, a ceramic substrate provided with a resistance heating element has been described as an example of the conductor layer. However, the conductor layer is not limited to the resistance heating element. In a wafer prober, a chuck top conductor is provided on the surface of the ceramic substrate. A guard electrode and a Dutch electrode are formed inside the layer. In the electrostatic chuck, electrostatic electrodes and RF electrodes are formed inside a ceramic substrate.

Since these wafer probers and electrostatic chucks have also been described in the first group of the present invention, their description is omitted here.

Further, the materials and characteristics of the ceramic substrates constituting the semiconductor manufacturing / inspection apparatus of the second group of the present invention have been described in the first group of the present invention, and therefore, the description thereof will be omitted. Next, a method of manufacturing a hot plate will be described as an example of a method of manufacturing a semiconductor manufacturing / inspection apparatus of the second group of the present invention.

FIGS. 17 (a) to 17 (d) are cross-sectional views schematically showing a manufacturing process of a ceramic substrate having a resistance heating element inside a ceramic substrate constituting a second group of semiconductor manufacturing / inspection apparatuses of the present invention. It is. In the first group of the present invention, the production method is not particularly described, but it can be produced by using a method similar to the method described below.

(1) Manufacturing process of ceramic substrate

First, a paste is prepared by mixing a nitride ceramic powder with a pinda, a solvent, and the like, and a green sheet is produced using the paste.

As the above-mentioned ceramic powder, aluminum nitride or the like can be used, If necessary, a sintering aid such as yttria may be added. Further, when producing the green sheet, crystalline or amorphous carbon may be added.

Further, as the binder, at least one selected from an acrylic binder, ethyl cellulose, butyl cellulose solvent, and polyvinyl alcohol is desirable.

Further, as the solvent, at least one selected from a-terbineol and glycol is desirable.

A paste obtained by mixing these is shaped into a sheet by a doctor blade method to produce a green sheet 500.

The thickness of the green sheet 500 is preferably 0.1 to 5 mm.

Next, if necessary, a part to be a through hole for inserting a support pin for supporting a silicon wafer and a part to be a bottomed hole for embedding a temperature measuring element such as a thermocouple into the obtained green sheet Then, a portion 390 or the like to be a through hole for connecting the resistance heating element and the external terminal is formed. The above processing may be performed after forming a green sheet laminate described later, or the above processing may be performed after forming a sintered body.

(2) Process of printing conductor paste on green sheets

A conductor paste containing a metal paste or a conductive ceramic is printed on the green sheet 500 to form a conductor paste layer 320.

These conductor pastes contain metal particles or conductive ceramic particles.

The average particle diameter of the metal particles, such as tungsten particles or molybdenum particles, is preferably from 0.1 to 5. If the average particle exceeds a force of less than 0.1 μππ \ 5 μπι, it is difficult to print the conductive paste.

As such a conductive paste, for example, 85 to 87 parts by weight of metal particles or conductive ceramic particles; at least one kind of binder 1 selected from acryl-based, ethynolecellulose, butyl cellulose solvent, and polyvinyl alcohol; 5 to 10 parts by weight; and a composition (paste) in which at least one solvent selected from α-terbineol and glycol is mixed with 1.5 to 10 parts by weight.

(3) Green sheet lamination process

The green sheet 5 on which the conductor paste prepared in the above step (1) is not printed 5 00 is laminated on and under the green sheet 500 on which the conductive paste layer 320 produced in the above step (2) is printed (FIG. 17 (a)).

At this time, the number of the green sheets 500 laminated on the upper side is made larger than the number of the dull sheets 500 laminated on the lower side, and the formation position of the resistance heating element 32 is eccentric toward the bottom.

Specifically, the number of layers of the upper green sheet 500 is preferably 20 to 50, and the number of layers of the lower green sheet 500 is preferably 5 to 20.

(4) Green sheet laminate firing process

The green sheet laminate is heated and pressurized to sinter the green sheet 500 and the internal conductive paste to produce a ceramic substrate 31 (FIG. 17 (b)). The heating temperature is preferably from 100 to ²⁰⁰ , and the pressurization pressure is preferably from 100 to ²⁰⁰ kg / cm ² . Heating is performed in an inert gas atmosphere. As the inert gas, for example, argon, nitrogen, or the like can be used.

The obtained ceramic substrate 31 is provided with a bottomed hole (not shown) for inserting a temperature measuring element and a blind hole 38 for inserting an external terminal (FIG. 17 (c)). The bottomed hole 38 and the bag hole 38 can be formed by blasting such as drilling or sand blasting after surface polishing.

Next, a washer 29 made of a conductive ceramic or the like is fitted into the through hole 39 exposed from the blind hole 38, and the conductive wire 33 is connected using a gold solder or the like (FIG. 17 (d)).

The ripening temperature is preferably from 90 to 450 in the case of soldering, and is preferably from 900 to 110 ^ in the case of treatment with brazing material. In addition, a thermocouple as a temperature measuring element is sealed with a heat-resistant resin to form a ceramic substrate for a hot plate.

Thereafter, the obtained ceramic substrate is fitted through a heat insulating ring into a supporting container having a structure as shown in FIGS. 11 to 13, and wiring from a temperature measuring element 37 such as a thermocouple and a resistance heating element 32 is provided. Then, insert the cylindrical part or the like into the radiator fin of the control device equipped with the radiator fin, or attach it to the controller and connect the wiring to the control device below it. The heat shield plates 86 and 96 of the supporting container were shot by punching after forming a disk etc. with metal. Pull out to form an opening.

In this hot plate, a silicon wafer or the like is placed on the hot plate, or the silicon wafer or the like is held by support pins, and then the object to be heated such as the silicon wafer is heated and various operations are performed. be able to.

When the ceramic substrate for the hot plate is manufactured, the ceramic substrate for the electrostatic chuck can be manufactured by providing an electrostatic electrode inside the ceramic substrate, and a chuck top conductor layer is provided on the heating surface. By providing a guard electrode and a ground electrode inside a ceramic substrate, a ceramic substrate for a wafer proper can be manufactured.

When the electrodes are provided inside the ceramic substrate, a conductive paste layer may be formed on the surface of the green sheet as in the case of forming the resistance heating element. When a conductor layer is formed on the surface of the ceramic substrate, a sputtering method or a plating method can be used, and these may be used in combination. Next, a third group of the present invention will be described.

Hereinafter, the present invention will be described based on the embodiments of the present invention. However, it is needless to say that the third group of the present invention is not limited to this embodiment and can be modified without impairing the effects of the present invention. ,.

In this embodiment, a semiconductor manufacturing / inspection apparatus includes a disc-shaped ceramic substrate provided with a resistance heating element composed of one or more circuits, a substantially cylindrical outer frame portion, and an outer frame portion. A ring-shaped substrate receiving portion provided at an upper portion on the inner side and supporting the ceramic substrate fitted via a heat insulating ring; and a heat shield plate provided at a lower portion on the inner side of the outer frame portion for preventing heat radiation. And a support container including an annular heat-shielding plate receiving portion for supporting through a connecting member.

In addition, a cylindrical portion having a diameter smaller than that of the outer frame portion and having a force having a heat radiation fin or a heat radiation fin can be fitted to the bottom of the outer frame portion. ing.

The above-mentioned semiconductor manufacturing / inspection apparatus has a configuration in which a cylindrical part having a smaller diameter than the outer frame part is extended at the bottom part, and the cylindrical part is provided in a conventional precision equipment storage part. It can be fitted directly into a cooler with a radiating fin (hereinafter referred to as a radiating fin). Therefore, there is no need to newly produce the above-mentioned heat radiation fins and the like, and the control device provided with the conventionally used heat radiation fins can be used as it is.

Next, a third group of semiconductor manufacturing / inspection apparatuses of the present invention will be described with reference to the drawings. FIG. 14 is a vertical sectional view schematically showing a hot plate which is an example of the third group of semiconductor manufacturing and inspection equipment of the present invention, and FIG. 15 is a plan view thereof.

The third group of semiconductor manufacturing / inspection devices of the present invention comprises a ceramic substrate 31 on which a resistance heating element 32 is formed and a supporting container 40, and the ceramic substrate 31 has an L-shaped thermal insulation in cross section. It is fitted into the upper part of the support container 40 via the ring 14.

A concentric resistance heating element 32 composed of a plurality of circuits is provided inside the disc-shaped ceramic substrate 31, and a blind hole 38 is formed at an end 3 2 a of the resistance heating element. The end 32 a of the resistance heating element and the conductive wire 33 are connected through a through hole 39. A through hole 35 for inserting a support pin (not shown) and a bottomed hole 34 are formed in a portion near the center, and a temperature measuring element 3 to which a lead wire 36 is connected is formed. 7 is inserted into the bottomed hole 34.

The support container 40 includes a substantially cylindrical outer frame portion 41, and a ring-shaped substrate receiving portion 43 and a heat-shielding plate receiving portion 4 provided on the upper and lower portions of the inner side of the outer frame portion 41, respectively. 4 and a cylindrical portion 42 provided on the bottom surface of the outer frame portion 41 and having a smaller diameter than the outer frame portion 41. These are integrally formed. The substrate receiving portion 43 supports the ceramic substrate 31 fitted via the heat insulating ring 14, and the heat shield plate receiving portion 44 serves to prevent heat radiation through a connecting member 47 such as a bolt. The heat shield plates 46 are supported.

The heat shield plate 46 is provided with a refrigerant introduction pipe 17 so that cooling air or the like can be introduced when the ceramic substrate 31 is cooled. Further, a pin insertion sleeve 5 communicating with the through hole 35 through which the support pin is inserted is formed.

Further, a radiation fin 130 is fitted into the cylindrical portion 42 at the lower part of the support container 40, and a control device containing a control device is provided below the radiation fin 130. The conductive wire 33 and the lead wire 36 are connected to the control device in the control device. The material of the supporting container 40 is not particularly limited, and examples thereof include metals such as iron and SUS.

The outer frame portion 41 has a substantially cylindrical shape, and its inner diameter is determined by the ceramic substrate used, but a ceramic substrate of 25 O mm or more can be fitted through a maturing ring. Size is preferred.

The outer diameter of the cylindrical portion 42 is set to a size that can be fitted into the radiation fin, that is, 200 to 243 mm.

When the semiconductor manufacturing / inspection apparatus of the third group of the present invention is operated, the resistance heating element 32 generates heat and the temperature of the ceramic substrate 31 rises, but the temperature measuring element 3 embedded in the ceramic substrate 3 1 By 7, the temperature of the ceramic substrate 31 is measured, the measured data is input to the control device, and the applied voltage (current) is controlled, so that the temperature of the ceramic substrate 31 is controlled to a constant value.

The outer diameter of the cylindrical portion 42 is just large enough to fit into the radiating fins. The plate can be installed. The lower control device does not become high in temperature due to the function of the radiation fins, and is maintained at a temperature close to room temperature.

In the third group of semiconductor manufacturing and inspection apparatuses according to the present invention, the resistance heating element embedded in the ceramic substrate has been described in the first group of the present invention, and the description thereof is omitted here.

The material and characteristics of the ceramic substrate constituting the semiconductor manufacturing / inspection apparatus according to the third aspect of the present invention have been described in the first group of the present invention, and thus the description thereof is also omitted. Next, another embodiment of the semiconductor manufacturing / inspection apparatus of the third group of the present invention will be described with reference to FIG.

This hot plate is composed of a ceramic substrate 31 and a support container 70. The ceramic substrate 31 has the same configuration as the ceramic substrate 31 shown in FIG. 14, and the ceramic substrate 31 is thermally insulated. It is fitted into the upper part of the support container 70 via the ring 14.

The support container 70 includes a substantially cylindrical outer frame portion 71, and a ring-shaped substrate receiving portion 73 and a heat shield plate receiving portion provided on the inner upper and lower portions of the outer frame portion 71, respectively. And a part 74, which are integrally formed. On the other hand, on the bottom surface of the outer frame portion 71, a cylindrical portion 7 is connected via an intermediate portion 7 2a having an upper annular portion 7 2b, a lower annular portion 7 2c, and a power radiating fin 7 2d. 2, the diameter of the cylindrical portion of the intermediate portion 72 a is smaller than that of the outer frame portion 71. Further, the cylindrical portion 72 is separated from the outer frame portion 71 and the like, and is extended so as to be detachable. Therefore, the cylindrical portion 72 is, together with the heat shield plate 86, bolts and the like. It is supported and fixed to the heat shield plate receiving portion 74 via the connecting member 77.

The internal structure, wiring, etc. of the heat shield plate 86 are substantially the same as those of the hot plate shown in FIG. 13, and a control device is provided below the cylindrical portion 72 having the heat radiation fins 72 d. The conductive wire 33 and the lead wire 36 are connected to control equipment in the control device.

The diameter of the cylindrical portion of the cylindrical portion 72 is the same as the diameter of the cylindrical portion 72 shown in FIG.

When this hot plate is activated, the resistance heating element 32 generates heat and the ceramic substrate 31 rises in temperature. However, the temperature measurement element 37 embedded in the ceramic substrate 31 allows the ceramic substrate 3 to be heated. The temperature of 1 is measured, the measured data is input to the control device, and the amount of applied voltage (current) is controlled, so that the temperature of the ceramic substrate 31 is controlled to a constant value.

Further, since the cylindrical portion 72 can be attached to a control device, the control device and the power supply are housed, and the third group of the semiconductor manufacturing / inspection device of the present invention is installed on the control device. It can be attached, and by the function of the radiation fin, the lower control device Can be kept at almost room temperature.

Further, since the cylindrical portion having a small diameter only needs to be fitted to the main body of the apparatus, it is not necessary to increase the size of the fitting portion and to increase the size of the apparatus.

Further, even if the size of the stage substrate is increased, the size of the fitting portion can be the same as that of the conventional one, so that the apparatus main body can be left as it is.

The hot plate has been described as an example of the semiconductor manufacturing / inspection apparatus of the third group of the present invention. Specific examples of the third group of semiconductor manufacturing / inspection apparatuses of the present invention include, for example, an electrostatic chuck, a wafer prober, and a susceptor in addition to the hot plate.

Since these have been described in the first group of the present invention, detailed description will be omitted here.

The method of manufacturing the semiconductor manufacturing / inspection apparatus according to the third group of the present invention has been described in the method of manufacturing the semiconductor manufacturing / inspection apparatus according to the first group of the present invention, and a description thereof will be omitted. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the present invention will be described in more detail.

(Examples 1 to 3) Production of hot plate

(1) the aluminum nitride powder (Tokuyamane earth, average diameter 1. 1 μ τη) 1 0 0 by weight unit, oxide Ittoriumu (Upsilon ₂ 0 _3: yttria, average particle size: 0. 4 / zm) 4 parts by weight, A composition composed of 11.5 parts by weight of an acrylic resin binder and alcohol was spray-dried to prepare a granular powder.

(2) Next, this granular powder was placed in a mold having a hexagonal cross section, and formed into a hexagonal flat plate to obtain a green body.

(3) processing of finished and the green product temperature: 1 8 0 0 ^, pressure: 2 0 0 k hot-pressed at gZ cm ^2, thickness was obtained aluminum nitride sintered body of 3 mm.

Next, a disk having a diameter of 210 mm was cut out from the sintered body to obtain a ceramic plate (ceramic substrate).

Next, the plate-shaped body is subjected to dry-rolling, and a portion serving as a through hole for inserting a support pin of a semiconductor wafer and a portion serving as a bottomed hole for embedding a thermocouple (diameter: 1.1 mm, (Depth: 2 mm).

(4) A conductor paste was printed on the bottom surface of the sintered body obtained in (3) by screen printing. The printing pattern was concentric.

As the conductor paste, Solvent PS 603D manufactured by Tokuka Chemical Laboratory, which is used to form through holes in printed wiring boards, was used.

This conductor paste is a silver-lead paste, with 100 parts by weight of silver being lead oxide (5% by weight), zinc oxide (55% by weight), silica (10% by weight), and boron oxide (25% by weight). ) And alumina (5% by weight). The silver particles had an average particle size of 4.5 / zm and were scaly.

(5) Next, the ceramic substrate on which the conductor paste was printed was heated and fired at 780 to sinter the silver and lead in the conductor paste and baked them on a sintered body to form a resistance heat generator. The silver-lead resistance heating element 32 had a thickness of 5 / zm, a width of 2.4 mm, and an area resistivity of 7.7 mQZ.

(6) An electroless nickel plating bath consisting of 80 g of nickel sulfate / 24 g of sodium hypophosphite, 1 g of sodium acetate l S gZ l boric acid, 8 gZl of boric acid, and 6 g / 1 of ammonium chloride The sintered body prepared in (5) was immersed, and a 1 / zm-thick metal coating layer (two layer) was deposited on the surface of the silver-lead resistance heating element 10.

(7) Silver-lead solder paste (manufactured by Tanaka Kikinzoku Co., Ltd.) was printed by screen printing on the part where external terminals for securing connection to the power supply were to be formed, forming a solder paste layer.

Next, an external terminal made of Kovar is placed on the solder paste layer, heated and reflowed at 420, the external terminal is attached to the surface of the resistance heating element, and then a socket having a conductive wire is connected to the external terminal. Attached.

(8) A thermocouple for temperature control was inserted into the bottomed hole, filled with polyimide resin, cured at 190 for 2 hours, and the production of the ceramic substrate for the hot plate was completed. Thereafter, the ceramic substrate having the resistance ripening body is fitted into a support container 90 having a structure as shown in FIG. 11, and the lead wires from the temperature measuring element (thermocouple) and the stakes are formed. Conductive wires from the end of the heating element were arranged as shown in FIG.

In this supporting container, the outer frame portion and the heat shield plate are made of stainless steel having a diameter of 220 mm and a thickness of 1.5 mm, and the heat insulating ring 14 is made of a fluorine resin reinforced with glass fiber. The bolt 98, the fixing bracket 97, and the refrigerant supply pipe 17 are also made of stainless steel. The heat shield 96 has a diameter of 10 mix! An opening of about 4 Omm was provided, and the area ratio of the opening was 15% (Example 1), 30% (Example 2), and 50% (Example 3). The weight (total of the outer frame part 91, heat shield plate 96, heat insulating ring 14, Bonoleto 98, fixing bracket 97, and refrigerant supply pipe 17) is 0.96 kg (Example 1) and 0.96 kg, respectively. 86 kg (Example 2) and 0.78 kg (Example 3). See Table 1 for details.

(Example 4) Production of hot plate

Basically, it is the same as Example 1, except that the area ratio of the opening (diameter 10 mm) of the heat shield 96 is 8.0%, and the weight (the outer frame part 91, the heat shield 96, Insulation ring 14, bolt 98, fixing bracket 97, and refrigerant supply pipe 17) totaled 0.98 kg.

(Example 5) Production of hot plate

Basically similar to Example 1, except that the diameter of the opening is 2 Omm, the area ratio of the opening of the heat shield plate 16 is 30%, and the thickness of the heat shield plate is 3 mm. Are different. In this embodiment, since the thickness of the heat shield plate is 3 mm, the weight (total of the outer frame portion 91, the heat shield plate 96, the heat insulating ring 14, the bolt 98, the fixing bracket 97, and the refrigerant supply pipe 17) Weighed 1.42 kg.

(Comparative Example 1) Manufacture of a hot plate having no opening in the heat shield plate Same as Example 1 except that no opening is provided and the weight (outer frame portion 91, ripening plate 96 , The insulation ring 14, the Porto 98, the fixing bracket 97, and the refrigerant supply pipe 17) totaled 1.08 kg.

(Comparative Example 2) Cooling

After the same hot plate as in Example 1 was manufactured, the hot plate was allowed to cool naturally without introducing any refrigerant into the supporting container. Aperture ratio Aperture diameter Number of apertures

(%) (mm) (pcs) (kg)

1 5 1 0 73 0.96 2

Difficult example 2 3 0 20 3 6 0.8.6

Difficult case 3 50 40 1 5 0.7.8

1 0 39 0. 9 8

Chinen 5 30 20 3 6 1.42

Shizu example 1 1.0 8 1 0

0.9 9 6 240

Note) i ^ In Example 2, the refrigerant was introduced and allowed to cool. As is clear from the results shown in Table 1, the time required to decrease the temperature from 200 to 25 ° C was as follows in Examples 1 to 3. In each case, the time was 2 minutes, the time in Example 4 was 3 minutes, and the time in Example 5 was 5 minutes. In each of the examples, the cooling time was relatively short.

On the other hand, in Comparative Example 1 in which an opening was not formed in the heat shield plate, it took a long time to cool down to 10 minutes, and in Comparative Example 2, it took an even longer time as 240 minutes.

From this, it is estimated that the main factor that determines the cooling rate is the weight of the supporting vessel, and the opening ratio is a secondary factor. However, when there is no opening, the cooling rate is significantly reduced. As described above, in the second group of the present invention, the temperature reduction rate can be improved only by controlling the weight of the opening and the supporting container, and a device having a simple structure and low cost can be obtained.

(Example 6) Production of hot plate

(1) the aluminum nitride powder (Tokuyama Corp., average particle size 1. 1 μτα) 1 00 by weight part, oxide Ittoriumu (Upsilon ₂ 〇 _3: Itsutoria, average particle size:. 0. μτη) 4 parts by weight, acrylic A composition comprising 11.5 parts by weight of a resin binder and alcohol was spray-dried to produce a granular powder.

(3) After the processed form is processed, temperature: 180 ° C, pressure: 200 kg / Hot pressing was performed at ² cm ² to obtain an aluminum nitride sintered body having a thickness of 3 mm.

Next, this plate is drilled to form a through hole for inserting a support pin of a semiconductor wafer and a bottomed hole for embedding a thermocouple (diameter: 1. lmm, depth: 2 mm).

This conductor paste is a silver-lead paste, and based on 100 parts by weight of silver, oxidized lead (5% by weight), zinc oxide (55% by weight), silica (10% by weight), and boron oxide (25% by weight) %) And 7.5% by weight of a metal oxide consisting of alumina (5% by weight). The silver particles had a mean particle size of 4.5 / m and were flake-like.

(5) Next, the ceramic substrate on which the conductor paste was printed was heated and fired at 780 to sinter the silver and lead in the conductor paste and bake them on a sintered body to form a resistance heat generator. The silver / lead resistance heating element 32 had a thickness of 5 m, a width of 2.4 mm, and an area resistivity of 7.7 mQZ.

(6) An electroless nickel plating bath consisting of 80 g of nickel sulfate, 24 g of sodium hypophosphite, 12 g of sodium acetate, 12 g of boric acid, 8 g of boric acid, and 6 g / l of ammonium chloride Then, the sintered body prepared in the above (5) was immersed, and a metal coating layer (nickel layer) having a thickness of 1 / zm was deposited on the surface of the resistance heating element 32 of silver-lead.

Next, the external terminals made of Kovar are placed on the solder paste layer, heated and reflowed at 420 ° C, and the external terminals are attached to the surface of the resistance heating element. Sockets were attached to the external terminals.

(8) A thermocouple for temperature control was inserted into the bottomed hole, filled with polyimide resin, cured at 190 for 2 hours, and the production of the ceramic substrate for the hot plate was completed. Thereafter, the ceramic substrate having the resistance heating element is fitted into a support container 40 having a structure as shown in FIG. 14, and the lead wire from the temperature measuring element (thermocouple) and the end from the end of the resistance heating element are connected. The conductive wires were arranged as shown in FIG. 14, and the cylindrical portion 42 constituting the hot plate support container 40 was fitted into the radiating fins of the control device to connect the wires to the control device. .

(9) Thereafter, the silicon wafer was heated while energizing the hot plate and holding the heating surface of the ceramic substrate at 25 O :. As a result, the silicon wafer was heated uniformly, the silicon wafer was not damaged, the temperature of the control device hardly increased, and the hot plate could be operated as designed.

(Example 7) Manufacturing of hot plate (see Fig. 17)

(1) the aluminum nitride powder (Tokuyama Corp., average particle size: 1. 1 ^ m) 1 00 parts by weight, oxide Ittoriumu (Y ₂ 0 _3: yttria, average particle size: 0. 4 μτα) 4 by weight unit, Acrylic binder 11.5 parts by weight, dispersant 0.5 parts by weight, and a paste obtained by mixing 53 parts by weight of alcohol composed of 1-butanol and ethanol 53 were molded by a doctor blade method to a thickness of 0. A 47 mm green sheet 500 was produced.

(2) Next, after drying this green sheet 500 at 80 for 5 hours, a portion serving as a through hole for inserting a support pin for supporting a silicon wafer and a portion serving as a through hole are formed by punching. did.

(3) 100 parts by weight of tungsten carbide particles having an average particle size of 1 μπι, 3.0 parts by weight of an atalyl binder, 3.5 parts by weight of an α-terbineol solvent, and 0.3 parts by weight of a dispersant are mixed. Conductor paste Α was prepared.

100 parts by weight of tungsten particles having an average particle size of 3 / zm, 1.9 parts by weight of an acryl-based binder, 3.7 parts by weight of an _α -terbineol solvent and 0.2 parts by weight of a dispersant are mixed to prepare a conductive paste Β. did.

After filling the through hole for the through hole with the conductor paste 、, the conductor paste A was printed on the green sheet by screen printing to form a conductor base layer 320 for the resistance heating element 32. The printing pattern was a concentric pattern, the width of the conductor paste layer was 10 mm, and its thickness was 12 // m.

On the green sheet 500 after the above processing, 37 sheets of green sheet 500 without tungsten paste printed on the upper side (heating surface), 13 sheets on the lower side, 130 t: 130 t :, 80 kg / The layers were laminated at a pressure of cm ² (Fig. 17 (a)).

(4) Next, the obtained laminate was degreased in nitrogen gas at 600 ° C. for 5 hours, and hot-pressed at 189 O and a pressure of 150 kg / cm ² for 10 hours to form a 3 mm thick plate. An aluminum nitride sintered body was obtained. This was cut into a 23 Omm disk and used as a hot plate with a resistance heating element 32 with a thickness of 6 μιη and a width of 1 Omm (aspect ratio: 1666) (see Fig. 1). 7 (b)).

(5) Next, the plate obtained in (4) is polished with a diamond grindstone, a mask is placed on the plate, and a bottomed hole for a thermocouple is formed on the surface by blasting with SiC or the like. Was set up.

(6) Further, the plate-shaped body is subjected to dorinor processing to form a blind hole 38 (FIG. 17 (c)). After fitting a W-made mesh 29 into the blind hole 38, the conductive wire 33 is formed. center hole in揷input City, N i-Au alloy (Au: 8 1. 5 wt%, N i: 1 8. 4 weight ^_0/0, impurities: 0. 1 wt%) of gold braze used consisting, 9 7, the washer 29 and the conductive wire 33 were brazed, and the conductive wire 33 was connected to the end of the resistance heating element 32 through the through hole 38 (Fig. 17 (d )).

(7) A plurality of thermocouples for temperature control were embedded in the bottomed holes, filled with a polyimide resin, and cured at 190 ° C for 2 hours to produce a ceramic substrate for a hot plate.

(8) After that, in substantially the same manner as in Example 6, it is inserted into the support container 40 shown in FIG. 14 to perform wiring and the like. Further, the completed hot plate is inserted into the control device, and the wiring to the control device is performed. Connected.

(9) Thereafter, the hot plate was energized, and the silicon wafer was heated while the heating surface 31a of the ceramic substrate 31 was kept at 250 ° C. As a result, the silicon wafer is heated uniformly, the silicon wafer is not damaged, etc., and the temperature of the control device is reduced. The hod plate was able to operate as designed with almost no rise. Possibility of industrial use

As described above, according to the first group of the present invention, since the support container is provided with the refrigerant supply pipe for communicating the inside and the outside thereof, the entire semiconductor manufacturing / inspection apparatus is uniformly cooled in a short time. be able to.

Further, according to the second group of the present invention, since the opening is formed in the plate-shaped body fixed to the support container, high-speed temperature reduction can be realized.

Further, according to the third group of the present invention, since a cylindrical portion having an outer diameter smaller than the outer frame of the support container is provided at the bottom of the support container, a control unit including a conventionally used radiation fin or the like is provided. The device can be used as it is.

Claims

The scope of the claims

1. A semiconductor manufacturing and inspection apparatus in which a ceramic substrate having a resistance heating element is installed in an opening of a bottomed supporting container,

A semiconductor manufacturing / inspection apparatus, wherein a coolant supply pipe is formed in the support container to communicate the outside of the support vessel.

2. The semiconductor manufacturing / inspection apparatus according to claim 1, wherein the refrigerant supply pipe is formed at a bottom of the support container.

3. The semiconductor manufacturing / inspection apparatus according to claim 1, wherein a plurality of the refrigerant supply pipes are formed.

4. The semiconductor manufacturing / inspection apparatus according to any one of claims 1 to 3, wherein a heat insulating ring is provided between an upper edge of the opening of the support container and an outer peripheral portion of a bottom surface of the ceramic substrate. .

5. The semiconductor manufacturing / inspection apparatus according to any one of claims 1 to 4, wherein a seal member is provided at a wiring lead-out portion of the support container.

6. A support container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-like body connected and fixed to the outer frame portion, wherein the plate-like body has a plurality of openings formed therein. A support container, characterized in that:

7. The support container according to claim 6, wherein the relationship between the projected area S A of the plate-shaped body and the total area S of the openings provided in the plate-shaped body is 0.03 ≦ S Z S A.

8. The method according to claim 6, further comprising an annular substrate receiving portion provided inside the outer frame portion and supporting the ceramic substrate fitted through a heat insulating ring. Support container.

9. The support container according to any one of claims 6 to 8, wherein a cooling medium supply port is formed in the plate-like body.

10. The support container according to any one of claims 6 to 9, wherein the relationship between the weight M (kg) of the support container and the diameter L (mm) of the ceramic substrate is M≤L 200.

1 1. A semiconductor manufacturing / inspection apparatus, wherein a ceramic substrate is supported and fixed to an outer frame of the support container according to any one of claims 6 to 10.

12. The semiconductor manufacturing / inspection apparatus according to claim 11, wherein a resistance heating element is provided on said ceramic substrate.

13. A supporting container for supporting a ceramic substrate, comprising a substantially cylindrical outer frame portion and a plate-like body connected and fixed to the outer frame portion, wherein the weight M (kg) of the supporting container and the ceramic A support container characterized in that the relationship between the substrate diameters L (mm) is M≤LZ200.

14. The support container according to claim 13, wherein a plurality of openings are formed in said plate-like body.

15. The support container according to claim 13, wherein a thickness of a member constituting the support container is 0.1 to 5 mm.

1 6. A semiconductor manufacturing / inspection apparatus, wherein a ceramic substrate is supported and fixed to an outer frame portion of the support container according to any one of claims 13 to 15.

17. The semiconductor manufacturing / inspection apparatus according to claim 16, wherein the ceramic substrate is provided with a resistance heating element.

18. A support container for supporting the stage substrate, which is characterized in that it comprises a substantially cylindrical outer frame portion and a cylindrical portion having a smaller diameter than the outer frame portion extending to the bottom of the outer frame portion. Support container to be featured.

19. The support container according to claim 18, wherein a radiation fin is formed in a cylindrical portion having a smaller diameter than the outer frame portion.

20. The support according to claim 18 or 19, further comprising an annular substrate receiving portion provided at an upper portion inside the outer frame portion and supporting the stage substrate inserted through a heat insulating ring. container.

21. An annular heat-shielding plate receiving portion provided at an inner lower portion of the outer frame portion and supporting a heat-shielding plate for preventing heat radiation through a connecting member is formed. The support container according to any one of 0.

22. A disk-shaped ceramic substrate provided with a conductor layer on the surface or inside, and a substantially cylindrical outer frame portion for receiving the ceramic substrate, and an outer frame portion extending to the bottom of the outer frame portion A semiconductor manufacturing / inspection apparatus comprising: a support container including a cylindrical portion having a smaller diameter than that of the support container.

23. The semiconductor manufacturing / inspection apparatus according to claim 22, wherein a radiation fin is formed in a cylindrical portion having a smaller diameter than an outer frame portion of the support container.

24. The support container is provided with an annular substrate receiving portion provided at an upper portion inside the outer frame portion and supporting the ceramic substrate fitted through a heat insulating ring. Semiconductor manufacturing and inspection equipment according to range 22 or 23.

25. The support container has an annular heat shield plate receiving portion provided at a lower portion inside the outer frame portion and supporting a heat shield plate for preventing heat radiation through a connecting member. 25. The semiconductor manufacturing / inspection apparatus according to any one of items 24 to 24.