WO1998045875A1 - Dispositif de regulation de la temperature - Google Patents

Dispositif de regulation de la temperature Download PDF

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Publication number
WO1998045875A1
WO1998045875A1 PCT/JP1998/001589 JP9801589W WO9845875A1 WO 1998045875 A1 WO1998045875 A1 WO 1998045875A1 JP 9801589 W JP9801589 W JP 9801589W WO 9845875 A1 WO9845875 A1 WO 9845875A1
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WO
WIPO (PCT)
Prior art keywords
fluid
temperature
temperature control
fluid ejection
control device
Prior art date
Application number
PCT/JP1998/001589
Other languages
English (en)
Japanese (ja)
Inventor
Masamitsu Kitahashi
Izumi Nishizawa
Akihiro Osawa
Hiroyuki Tokunaga
Kanichi Kadotani
Original Assignee
Komatsu Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP9088236A external-priority patent/JPH10284382A/ja
Priority claimed from JP12093797A external-priority patent/JPH10312943A/ja
Application filed by Komatsu Ltd. filed Critical Komatsu Ltd.
Publication of WO1998045875A1 publication Critical patent/WO1998045875A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Definitions

  • the present invention relates to a temperature control device for controlling the temperature of a temperature control target such as a temperature control device.
  • a heating step for removing the solvent remaining in the resist film applied to the wafer and a heating step (post-baking) for facilitating the close contact between the resist and the substrate before etching.
  • Cooling process to cool heated wafers to room temperature, etc. In these processes, it is important to control the temperature of wafers more efficiently and with high precision to increase throughput.
  • Various types of temperature control have been employed.
  • Japanese Patent Application Laid-Open No. Sho 62-451121 is a prior art of this kind.
  • This conventional technology is used in a photoresist removal device that removes the photoresist that masks the wafer into a predetermined pattern.
  • a heater is installed under the susceptor on which the wafer is placed to enable the wafer to be heated.
  • ultraviolet lamps are arranged above these wafers.
  • a rotatable discharge purge head having a large number of oxygen gas ejection holes formed above the ultraviolet lamp is provided, and oxygen gas is supplied in a dashed manner from above the wafer.
  • oxygen gas supplied in a shower is excited by an ultraviolet lamp to generate ozone, the photoresist on the wafer surface is separated from the wafer surface by the ozone gas, and the photoresist is exhausted to the outside through an exhaust nozzle. I'm trying.
  • the temperature of the wafer is controlled only by a heater provided on the wafer mounting table (susceptor). Therefore, when cooling the wafer temperature, it is necessary to rely on natural heat radiation. There is a problem in terms of accuracy and speed in controlling the temperature to a certain level.
  • the cooling process is performed by circulating cooling air in a chamber defined below the wafer support table, and the heating process is performed by a heater.
  • the efficiency is low and it takes time for the wafer to reach a predetermined temperature.
  • This conventional technology relates to a wafer temperature control device in an X-ray exposure apparatus, in which a plurality of Peltier elements, a heat pipe, and a cooling block are sequentially stacked under a wafer support (suction block), and heat is quickly diffused by the heat pipe. The temperature is controlled by the Peltier element while the temperature is controlled.
  • temperature control is basically performed by a Peltier element, so that the controllable temperature range is limited, and since heat exchange efficiency and durability are poor, when the temperature range to be controlled is wide, There is a problem that it takes a long time to reach a desired temperature of the wafer and that the life of the Peltier device is short.
  • the present invention has been made in view of the above circumstances, and has a temperature control device for quickly and accurately controlling a temperature-controlled object such as a wafer to a desired temperature by controlling temperature by controlling heat exchange efficiency.
  • the purpose is to provide.
  • the present invention provides a temperature control in which a plurality of different target values of temperature control are performed in a wide temperature range and the target object to be temperature-controlled is moved quickly between the plurality of different target values. It is another object of the present invention to provide a temperature control device capable of accurately controlling to the plurality of target values.
  • a support plate for supporting an object to be temperature-controlled, a fluid ejection chamber provided such that an upper wall thereof is in contact with a lower portion of the support plate, and a fluid is supplied to an upper inner wall surface of the fluid ejection chamber.
  • a fluid discharging means that performs the operation.
  • the temperature-controlled object is blown out to the upper inner wall surface of the fluid ejection chamber disposed below the support plate that supports the temperature-controlled object.
  • the temperature is controlled. That is, by performing heat exchange between the object to be temperature-controlled and the upper wall surface of the fluid ejection chamber via the support plate, the temperature of the object to be temperature-controlled is controlled.
  • the heat exchange efficiency can be increased as compared with the conventional art, and the temperature controlled object can be quickly controlled to a desired temperature.
  • a support plate for supporting an object to be temperature-controlled, a temperature control room provided such that an upper wall surface thereof is in contact with a lower portion of the support plate, and an upper inner wall surface of the temperature control room.
  • a plurality of fluid ejection holes for ejecting a fluid to the fluid ejection device; a fluid supply means for supplying a fluid adjusted to a predetermined temperature to the fluid ejection holes; and a temperature control device for controlling the fluid ejected from the plurality of fluid ejection holes to the temperature. It is characterized by comprising a fluid discharge means for discharging from the chamber, and a light heating type heater means for heating the upper inner wall surface of the temperature control chamber using light energy.
  • the temperature-controlled object is blown out to the upper inner wall surface of the fluid ejection chamber disposed below the support plate that supports the temperature-controlled object.
  • the upper inner wall surface of the fluid ejection chamber is heated in a non-contact manner by a heater means of a light heating system using light energy in a near-infrared light region or a visible light region. That is, by performing heat exchange between the temperature control target and the upper wall surface of the fluid ejection chamber through the support plate, the temperature of the temperature control target is controlled.
  • FIG. 1 is a diagram showing a first embodiment of the present invention.
  • FIG. 2 is a plan view showing an example of arrangement of thermoelectric elements and the like according to the first embodiment.
  • FIG. 3 is a plan view of a fluid ejection nozzle according to the first embodiment.
  • FIG. 4 is a diagram showing valve switching timing in the first embodiment.
  • Figure 5 Diagram showing the swirling nozzle.
  • FIG. 6 is a diagram showing a second embodiment of the present invention.
  • FIG. 7 is a plan view of a fluid ejection nozzle according to the second embodiment.
  • FIG. 8 A diagram showing a third embodiment of the present invention.
  • FIG. 9 A diagram showing a fourth embodiment of the present invention.
  • FIG. 10 A diagram showing a fifth embodiment of the present invention.
  • FIG. 11 is a diagram showing supply timings of liquid and gas in the fifth embodiment.
  • FIG. 12 is a view showing a sixth embodiment of the present invention.
  • FIG. 13 is a view showing a seventh embodiment of the present invention.
  • FIG. 14 is a side view showing a specific configuration example of the light heating type heater according to the seventh embodiment.
  • FIG. 15 is a plan view showing an arrangement of a light heating type heater and a fluid ejection nozzle of the seventh embodiment.
  • FIG. 16 shows a modification of the seventh embodiment.
  • FIG. 17 is a view showing a modification of the seventh embodiment.
  • FIG. 18 shows a modification of the seventh embodiment.
  • FIG. 19 A diagram showing a modification of the seventh embodiment.
  • FIG. 20 shows a modification of the seventh embodiment.
  • a resist film is generally formed through the following process.
  • the baking temperature is set at 110 ° C. to 130 ° C. (depending on the process), and in the cooling step performed after the pre-bake step,
  • the target temperature is set to a room temperature of about 20 ° C., for example.
  • the baking temperature was 120 in the above-mentioned post-baking process.
  • the temperature is set to C to 50 ° C. (depending on the process), and the target temperature is set to a room temperature of, for example, about 20 ° C. in the cooling step performed after this post-baking step.
  • the temperature distribution of the wafer is quite severe in order to be able to shift to these steps immediately. Conditions are required.
  • the temperature control device of the embodiment described below is used in the pre-bake + cooling step or the boast bake + cooling step.
  • the wafer is heated to a high temperature (baking step), and then the wafer is heated to about room temperature.
  • the cycle of cooling (cooling process) is repeated at intervals of several 10 seconds for each wafer. That is, in this case, there are two target temperatures, a target temperature for heating and a target temperature for cooling, and the heating and cooling are repeated alternately.
  • 1 to 3 show a first embodiment of the present invention.
  • FIG. 1 the Ueno 1 is supported by a plurality of pins 3 (four in this case, see FIG. 2) through which the heat releasing / absorbing plate 2 is inserted.
  • Each pin 3 is on top of plate 2 From the wafer 1, for example, and a very small gap is formed between the wafer 1 and the plate 2.
  • FIG. 2 is a plan view of the plate 2 as viewed from above, omitting the wafer 1 of FIG.
  • the heat releasing / absorbing plate 2 is made of a material having a high thermal conductivity (aluminum or copper), and is provided so that heat exchange with the wafer 1 is performed uniformly over the entire surface of the wafer 1.
  • a heat panel may be used as the heat release / absorption plate 2.
  • a plurality of (in this case, nine as shown in FIG. 2) multi-elements (thermoelectric elements) 4 are joined between the plate 2 and the base 5.
  • the Peltier element 4 has a large number of P-type semiconductor pieces and N-type semiconductor pieces alternately arranged on a two-dimensional plane, and the P-type semiconductor pieces and the N-type semiconductor pieces have a large number of planar electrodes.
  • Peltier element 4 When a DC current is supplied to the Peltier element 4, the Peltier effect is generated, and the Peltier element 4 operates to absorb heat on one surface and dissipate heat on the other surface. That is, these Peltier elements 4 are provided to carry heat between the base 5 and the heat-dissipating and absorbing plate 2, and to perform delicate temperature control.
  • the base 5 is made of a material having high thermal conductivity (aluminum or copper), like the plate 2.
  • a plurality of pins 3 for supporting the wafer 1 are screwed to a portion of the base 1 where the Peltier element 4 is not joined.
  • a plurality of (9) fluid ejection chambers 6 are defined corresponding to a plurality of (9) Peltier elements.
  • the fluid ejection nozzle 8 connected to the nozzle is disposed. That is, the region E of the base 5 where the Peltier element 4 is not disposed (see FIG. 2) does not directly contribute to heat exchange, and in this case, the fluid ejection chamber is partitioned corresponding to a plurality of Peltier elements. However, fluid is prevented from contacting these areas of the base 5.
  • a high-temperature fluid and a low-temperature fluid are supplied to the fluid ejection pipe 7 through a switching valve 9, a supply path 10, and a throttle 11 so that the flow rate in the fluid ejection pipe 7 is controlled by the throttle 11. It's getting faster.
  • the fluid ejection nozzle 8 has a large number of small ejection holes, and a shower-like high-speed fluid is applied to the lower surface of the base 5 constituting the ceiling of the fluid ejection chamber 6. It gushes radially.
  • the cross section of the fluid ejection chamber 6 is formed like a funnel so that the cross-sectional area gradually decreases from the top to the bottom, and a fluid return pipe 12 is connected to the lowermost portion.
  • the fluid return pipe 12 is connected to a switching valve 14 via a discharge path 13.
  • the switching valve 14 By switching the switching valve 14, the high-temperature fluid is supplied to the heater 15 and reheated, while the low-temperature fluid is supplied. Is supplied to the chiller 16 for recooling. Pumps 17 and 18 are connected between the heater 15 and the chiller 16 and the valve 9, respectively, so that the reheated / "re-cooled fluid is circulated again to the valve 9". .
  • each fluid ejection chamber 6 is sealed. Therefore, in this case, a jet flow is ejected from the ejection nozzle 8 to the fluid ejection chamber 6 filled with fluid, so that forced convection as shown by an arrow in FIG. Is generated, and the lower surface of the base 5 is heated or cooled by the forced convection.
  • the side wall 19 for defining each fluid ejection chamber 6 is made of a material having poor thermal conductivity, and the heat of the ejected fluid is efficiently transferred to the Peltier element 4 via the base 5. I try to communicate well.
  • a liquid such as Fluorinert (registered trademark), ethyl blendy recall, oil, water, and a gas such as nitrogen, air, and helium are appropriately selected and used according to the target temperature.
  • liquids such as florinate, ethylene glycol, water, and oil, and gases such as air, nitrogen, and helium are used.
  • the wafer 1 to which the resist has been applied is carried in and placed on the pins 3.
  • the high-temperature fluid is adjusted to a temperature near 120 ° C by heater 15.
  • the high-temperature fluid is introduced into the fluid ejection pipe 7 via the valve 9, the supply path 10, and the throttle 11 by the pump 17.
  • the high-temperature fluid in the fluid ejection pipe 7 passes through the throttle 11.
  • the fluid velocity is increased, and the fluid is jetted into the fluid ejection chamber 6 filled with fluid through a large number of ejection holes of the fluid ejection nozzle 8.
  • the ejected high-temperature fluid collides with the lower surface of the base 5 constituting the ceiling of the fluid ejection chamber 6.
  • the heat transfer coefficient of the lower surface of the base 5 increases, and the upper surface of the base 5 in contact with the Peltier element 4 can be quickly brought close to the temperature of the high-temperature fluid. Then, the heat transmitted to the base 5 is transmitted to the wafer 1 via the Peltier element 4 and the plate 2.
  • the delicate temperature control is performed by driving and controlling the Peltier element. That is, the temperature of the base 5 or the plate 2 is detected by a sensor (not shown), and the temperature of the wafer 1 is controlled to the target temperature of 120 ° C. by driving and controlling the Peltier element based on the detected temperature.
  • the fluid ejection chamber 6 Since the fluid ejection chamber 6 is filled with the high-temperature fluid, the amount of the high-temperature fluid ejected through the fluid ejection nozzle 8 is supplied to the discharge path via the fluid return pipe 12 through the fluid return pipe 13. Will be served to you.
  • the valve 9 is switched to the low-temperature fluid side, and a low-temperature fluid having a temperature in the vicinity of 20 ° C. is supplied to the fluid ejection pipe 7 in the same manner as described above.
  • the low-temperature fluid supplied to the fluid ejection pipe 7 is ejected in the form of a jet via the fluid ejection nozzle 8 and rapidly cools the lower surface of the base 5 to near 20 ° C. by the same action as described above. . That is, in this case, the heat of the heater 1 is radiated through the plate 2, the Peltier element 4, and the base 5, thereby cooling the heater 1. Even during this cooling, delicate temperature control is performed by driving and controlling the Peltier device.
  • the temperature of the base 5 or the plate 2 is detected by a sensor (not shown) as described above, and the temperature of the wafer 1 is controlled to the target temperature of 20 ° C. by controlling the driving of the Beltier element based on the detected temperature.
  • the wafer is carried out of the apparatus, and a new wafer coated with a resist is carried in instead, and heated and cooled in the same manner as described above.
  • the fluid ejected from the fluid ejection nozzle 8 comes into contact with the lower surface of the base 5 to absorb or dissipate heat and is immediately replaced with a new fluid, thereby performing heat exchange.
  • the lower surface of the table 5 is always supplied with a fluid having a temperature close to the desired temperature. As a result, the temperature of the wafer 1 can be rapidly controlled to the desired temperature.
  • the temperature is adjusted by the belch-element 4 which comes into contact with the base 5 in a state where the temperature of the base 5 is heated or cooled to near the target temperature by the ejected fluid
  • the function of the Peltier device can be used effectively, and its thermal response becomes extremely high.
  • the Peltier element has the property that the smaller the temperature difference between the high temperature side and the low temperature side, the larger the amount of heat absorbed.
  • the above-mentioned jet fluid heats or cools the temperature of the base 5 to near the target temperature. By doing so, the temperature difference at the junction of the Peltier element is reduced, and thereby the temperature control by the Peltier element is performed with good thermal responsiveness.
  • the supply fluid is switched from the high-temperature fluid to the low-temperature fluid by switching the valve 9 before the predetermined time t1 before the start of the baking process, and the valve 9 is switched by the valve 9 before the predetermined time t2 before the start of the cooling process. Try to switch from fluid to hot fluid.
  • the partition of the fluid ejection chamber 6 may be eliminated to form one fluid ejection chamber, and the fluid return pipe 12 and the discharge path 13 may be integrated. Furthermore, a single fluid ejection pipe 7 is provided, and the ejection nozzle 8 is large enough to cover the entire lower surface of the base 5. As an area, a jet stream may be ejected.
  • a swirling flow nozzle 20 that generates a tornado-shaped swirling flow as shown in FIG. 5A may be used as the ejection nozzle 8.
  • This swirling flow nozzle 20 has a conical depression 21 at the nozzle tip, and four holes 22 are formed on its slope, and these holes use the thickness of the wall of the conical portion of the nozzle. Therefore, as shown in Figs. 5 (b) and 5 (c), the fluid is evacuated along the peripheral surface of the conical portion.
  • the fluid ejected from these holes 22 has a velocity component in the direction along the peripheral surface of the conical portion and an upward velocity component, so that the fluid is ejected as a tornado-shaped swirling flow. Will be.
  • the swirling flow nozzle may be provided separately for each fluid ejection chamber as in the embodiment shown in FIG. 1, but the fluid ejection chamber is divided into one and the fluid is supplied by one fluid ejection pipe. Such a case can also be adopted.
  • the swirling flow nozzle may have a large area capable of covering the entire lower surface of the base 5, and a large number of holes may be formed so as to generate a swirling flow along the peripheral surface of the conical portion 21. In this case, one large swirling flow is formed below the base 5.
  • the Peltier element is used as the thermal energy transport means for transporting thermal energy from the base 5 to the plate 2, but a number of heat pipes are provided in place of the Peltier element.
  • a heat panel may be used.
  • both the heat panel and the Beltier element may be used as the thermal energy transfer means.
  • the vertical relationship between the heat panel and the Peltier device is arbitrary.
  • heat can be transmitted uniformly with a compact configuration.
  • FIG. 6 shows a second embodiment of the present invention.
  • the fluid ejection chamber 30 is opened by the opening 31 instead of sealing the fluid ejection chamber 30, and the perforated plate 32 is disposed above the fluid ejection chamber 30. Then, the turbulence effect of the ejected fluid is improved.
  • the fluid ejection chamber 30 is not defined for each Peltier element, but is divided into one fluid ejection chamber and one fluid return pipe 12 is provided. ing.
  • the fluid supplied through the fluid supply passage 10 is temporarily stored in the reservoir 34, and then a plurality of fluids are arranged so as to cover the entire surface of the ceiling of the fluid ejection chamber 30. It is ejected through the ejection nozzle 35. As shown in FIG. 7, each of the ejection nozzles 35 has a large number of holes 36 formed therein, and ejects the fluid through these holes 36 in a shrunk manner. In addition, the diameter of the ejection nozzle 35 may be reduced, and one ejection hole may be formed in each of the large number of ejection nozzles.
  • the fluid ejection chamber 30 is opened by the opening 31, the fluid ejected from the plurality of nozzles 35 is different from the first embodiment.
  • the air flows through the space and collides with the upper inner wall surface 5 constituting the ceiling of the fluid ejection chamber 30, the flow velocity of the ejection flow increases as compared with the first embodiment, and the Only the new fluid collides with the ceiling at all times, and heat exchange occurs promptly. Therefore, this embodiment is particularly effective when controlling the temperature of the wafer by frequently switching the temperature of the fluid.
  • the thermal expansion of the inner wall surface of the ejection chamber 30 when the high-temperature fluid is ejected can be absorbed. Is maintained, and the wafer 1 can be uniformly heated.
  • the fluid that has collided with the ceiling of the fluid ejection chamber 30 flows down to the lower part of the fluid ejection chamber 30 and is discharged outside through the fluid return pipe 12.
  • the bottom surface of the fluid ejection chamber 30 is inclined so that the fluid naturally flows down to the fluid return pipe 12.
  • the fluid since the fluid is temporarily stored in the accumulation portion 34 and then ejected through the plurality of nozzles 35, the fluid collides with a more uniform flow velocity over the entire ceiling of the fluid ejection chamber 30. This is also advantageous in terms of temperature uniformity of the ceiling of the fluid ejection chamber 30.
  • the thickness of the pool portion 34 be as thin as possible to reduce its heat capacity. In other words, if the pool portion 34 is made thinner, its volume naturally becomes smaller, and the adverse effect of the temperature of the previously stored fluid when switching the fluid between the high-temperature fluid and the low-temperature fluid can be reduced.
  • a reinforcing member such as a column may be provided to support the thinned pool portion 34.
  • the fluid ejected from the nozzle 35 has a mountain-shaped flow velocity spatial distribution, and by overlapping the skirt of the mountain, the flow velocity distribution is distributed over the entire surface of the ceiling of the fluid ejection chamber 30. Make it uniform.
  • the technique of opening the fluid ejection chamber 30 as in the second embodiment may be applied to the first embodiment.
  • an opening may be provided for each fluid ejection chamber 6 defined for each Peltier element.
  • a heater may be provided instead of the thermal element.
  • FIG. 8 shows a third embodiment of the present invention.
  • FIG. 8 (b) shows a cross section taken along the line AA of FIG. 8 (a).
  • the fluid ejection nozzles 8 and 35 are commonly used for the high-temperature fluid and the low-temperature fluid.However, in the third embodiment, the fluid ejection nozzles An ejection nozzle for the low-temperature fluid is provided separately. That is, the fluid supply path and the discharge path are separately provided for the high temperature and the low temperature.
  • a large number of high-temperature fluid ejection nozzles 40 are formed.
  • the high-temperature fluid supply pipe 41 and the low-temperature fluid supply pipe 43 formed with a large number of low-temperature fluid jet nozzles 42 are formed in a comb shape, and are arranged so as to interlock with each other.
  • the high-temperature fluid is supplied to the high-temperature fluid supply pipe 41 via the valve 44 and is ejected from the ejection nozzle 40.
  • the valve 100 is open and the valve 101 is closed.
  • the ejected high-temperature fluid collides with the upper inner wall surface of the fluid ejection chamber 46, and is then discharged via the valve 100 and the discharge pipe 47.
  • the low-temperature fluid is supplied to the low-temperature fluid supply pipe 43 via the valve 45 and is ejected from the ejection nozzle 42. At this time, the valve 100 is closed and the valve 101 is open. The jetted low-temperature fluid collides with the upper inner wall surface of the fluid jetting chamber 46, and is then discharged through the valve 101 and the discharge pipe 48.
  • the fluid ejection chamber may be closed as in the first embodiment, or may be opened as in the second embodiment.
  • the ejection path for the high-temperature fluid and the ejection path for the low-temperature fluid to the fluid ejection chamber 46 are separately provided, and when the supply of one fluid is performed, the other is used. Since the supply of the fluid is stopped, unnecessary heat transfer between the high-temperature fluid supply path and the low-temperature fluid supply path is eliminated, and higher-speed and more efficient wafer temperature control can be achieved. Further, since the fluid discharge path is provided separately for the high temperature and the low temperature, the wafer temperature can be controlled more quickly and efficiently.
  • FIG. 9 shows a fourth embodiment of the present invention.
  • heating is performed only by the heater 50 without using a fluid, and only cooling is performed using a low-temperature fluid.
  • a heater 50 is provided below the plate 2 below the wafer 1, and the upper inner wall 5 constituting the ceiling of the fluid ejection chamber 51 below the heater 50 is provided.
  • the cryogenic fluid is ejected.
  • the structure of the fluid ejection chamber 51 may be closed as in the first embodiment, or may be opened as in the second embodiment.
  • the configuration that partitions or does not partition the fluid ejection chamber 51 is optional. is there.
  • the surface temperature of the plate 2 is controlled to the target temperature using only the heater 50.
  • the temperature of the supplied low-temperature fluid is adjusted to a temperature slightly lower than the target temperature (for example, when the target temperature is 20 ° C., a temperature slightly lower than this, for example, 15 ° C.).
  • the low-temperature fluid is ejected toward the upper inner wall surface 52 of the fluid ejection chamber 51.
  • the upper inner wall surface 52 of the fluid ejection chamber 51 becomes overcooled. This supercooling is offset by the heat generated by the heater 50, and the temperature is controlled so as to reach the target temperature.
  • the heater 50 a Peltier element may be used, but an electric heater may be used.
  • the heat-dissipating / absorbing plate 2 may be made of aluminum or the like having a good heat transfer coefficient, or a plate having a high heat diffusion property such as a heat pipe may be used.
  • a high-temperature fluid may be supplied to the fluid ejection chamber 51 when the wafer is heated, and the heating control may be performed by the high-temperature fluid and the heater 50.
  • FIG. 10 shows a fifth embodiment of the present invention.
  • the high-temperature fluid and the low-temperature fluid are injected to the upper inner wall surface of the fluid ejection chamber to perform the heating / cooling process in the first embodiment.
  • a second configuration for blowing gas and low-temperature gas onto the wafer from above is added to assist in accelerating the heating and cooling of the wafer.
  • the configuration of the first embodiment is adopted as the first configuration, and redundant description will be omitted.
  • the temperature control device of the first embodiment is housed in a temperature control chamber 60 together with the wafer 1.
  • a gas supply nozzle 61 is provided above the wafer 1, and a high-temperature gas or a low-temperature gas supplied from the gas supply nozzle 61 via a switching valve 62 is jetted.
  • the gas in the temperature control chamber 60 is exhausted through the exhaust holes 63. I'm bothered.
  • a valve 64 is provided in the exhaust pipe, and switching of the valve 64 switches between the normal exhaust path 65 and the exhaust path on the vacuum pump 66 side.
  • the temperature control as shown in FIG. 11 is performed.
  • a high-temperature fluid is introduced into the fluid ejection pipe 7 from the heater 15, and the high-temperature fluid is ejected to the lower surface of the base 5 through the ejection nozzle 8.
  • the gas is jetted from the gas supply nozzle 61 through the nozzle 2.
  • valve 9 is switched to the low-temperature fluid side to introduce the low-temperature fluid from the chiller 16 into the fluid ejection pipe 7, and the low-temperature fluid is ejected to the lower surface of the base 5 through the ejection nozzle 8.
  • the low-temperature gas is jetted from the gas supply nozzle 61 through the valve 62.
  • the temperature of the wafer 1 rises and falls due to the temperature transmission from the lower surface and the upper side of the wafer 1, but when the temperature of the wafer 1 exceeds a predetermined temperature, the temperature of the resist solvent evaporates. In this area, it is necessary to minimize the temperature variation on the surface.
  • the ejection of the high-temperature gas and the low-temperature gas from the gas supply nozzle 61 is stopped in a region where the temperature is higher than the evaporation temperature of the resist solvent.
  • the inside of the temperature control chamber 60 is evacuated using the vacuum pump 66 to eliminate disturbance in the temperature distribution control. You may make it.
  • the gas ejected from the gas supply nozzle 61 may be used only for heating or only for cooling.
  • FIG. 12 shows a sixth embodiment of the present invention.
  • the liquid in which the gas is mixed is formed into a mist and is ejected to the upper inner wall surface of the fluid ejection chamber.
  • a high-temperature liquid is supplied to a plurality of high-temperature mist through a high-temperature liquid supply path 70.
  • the nozzle 71 is supplied.
  • a high-temperature gas such as N2 or He is supplied from a high-temperature gas supply source 72, and is mixed with the high-temperature liquid in the middle of the high-temperature liquid supply path 70 by a pump 73.
  • the low-temperature liquid is supplied to a plurality of low-temperature mist nozzles 75 through a low-temperature liquid supply path 74.
  • low-temperature gas such as air or N2 is supplied from a low-temperature gas supply source 76 and mixed with the low-temperature liquid in the middle of the low-temperature liquid supply path 74 by a pump 77.
  • a heater 50 such as a Peltier element, an electric heater, a heat radiation / absorption plate 2, and a wafer 1 are stacked on the fluid ejection chamber 78.
  • the area 79 where the heater 50 is placed on the ceiling surface of the fluid ejection chamber 78 is made of a material such as aluminum with a high heat transfer coefficient, but the other area 80 has a poor heat transfer coefficient It is made of material.
  • a perforated plate 33 is provided above the mist nozzles 71, 75 of the fluid ejection chamber 78 to further improve the turbulence effect.
  • the mist-like fluid is ejected to the upper inner wall surface 79 of the fluid ejection chamber 78 to obtain a turbulent flow effect to improve the heat transfer capability, and to reduce the fluid even if there is no accumulation portion. Can be uniformly applied to the upper inner wall surface 79 of the fluid ejection chamber 78.
  • the turbulence effect may be further enhanced by roughening the surface of the inner wall surface 79 by providing irregularities or the like on the upper inner wall surface 79, providing protrusions, or shaving the upper inner wall surface 79.
  • nozzles 71 and 79 were removed so that the jetted mist-like fluid exchanged heat with the upper inner wall 79 and flowed down and did not take away the heat of the nozzles 71 and 75.
  • An area may be covered with a protector.
  • FIGS. 13 to 15 show a seventh embodiment of the present invention.
  • Ueno 1 is supported by a heat release / absorption plate 2.
  • the heat release / absorption plate 2 is made of a material with high thermal conductivity (aluminum or copper). This is provided so that heat exchange with the wafer 1 is performed uniformly over the entire surface of the wafer 1.
  • a heat panel 90 is provided below the heat release / absorption plate 2.
  • the heat panel 90 is formed with a plurality of communicating spaces that contain a working fluid having good thermal conductivity inside the heat panel 90 to improve heat transfer between the ceiling surface 5 of the temperature control room 6 and the wafer 1. It is provided to make the temperature distribution of the heat radiation / absorption plate 2 and the wafer 1 uniform.
  • the area 5a where the heat panel 90 of the upper wall 5 constituting the ceiling of the temperature control room 6 is placed is made of a material having high thermal conductivity (aluminum or copper), but other areas are used.
  • 5b is made of a material having a poor heat transfer coefficient, so that heat is efficiently transferred between the upper wall surface 5 and the heat panel 90.
  • a plurality of fluid ejection nozzles 8 are provided in the temperature control chamber 6, and the low-temperature liquid C is supplied to the plurality of fluid ejection nozzles 8 via a supply pipe 7.
  • the fluid ejection nozzle 8 is formed with one or more small ejection holes, and ejects a shower-like high-speed low-temperature liquid C onto the upper inner wall surface 5 constituting the ceiling of the temperature control chamber 6.
  • the supply pipe 7 is connected to the valve 9, the liquid supply path 10, the pump 18, the chiller 16, the fluid discharge path 13, and the discharge port 91 of the temperature control chamber 6.
  • the low-temperature liquid C adjusted to a predetermined low-temperature by the chiller 16 is supplied to the fluid ejection nozzle 8 through the pump 18, the valve 9, and the supply pipe 7, and the upper inner wall of the temperature control chamber 6 is formed. Collised with 5. Thereafter, the low-temperature liquid C is discharged to the fluid discharge passage 13 through the discharge port 91, and then supplied to the chiller 16 to be re-cooled. The cryogenic liquid C recooled by the chiller 16 is recirculated to the valve 9 by the pump 18.
  • a liquid having a light transmitting property and an insulating property for example, Fluorinert (registered trademark) is used as the low-temperature fluid C.
  • a water jet render recall may be used depending on the temperature level.
  • the temperature control chamber 6 may be provided with an opening (not shown) and may be opened or may be closed. If the temperature control room 6 is sealed, When the low-temperature fluid C is ejected from the ejection nozzle 8 to the temperature control chamber 6 filled with fluid, the fluid ejection nozzle 8 ⁇ the upper wall surface of the temperature control chamber 6 ⁇ the discharge port 9 1 A forced convection is generated, and the upper wall 5 of the temperature control chamber 6 is cooled by the forced convection.
  • the low-temperature fluid collides with the upper inner wall 5 through the space, so that the velocity of the jet flow increases and a new fluid is always provided on the ceiling of the temperature control chamber. Only collision will occur, and heat exchange will take place quickly.
  • the temperature control chamber 6 is provided with a plurality of light heating type heaters 92 for heating the wafer 1 (directly on the upper wall surface 5 of the temperature control chamber 6).
  • These light heating type heaters 92 are, for example, halogen heaters, and use light (mostly near-infrared light) emitted from the halogen lamp 93 as heat.
  • a lamp using a lamp that generates light energy of a near-infrared light region or a visible light castle having a good light-to-heat conversion rate is mainly employed.
  • the light heating type heater 92 is composed of a base holder 94, a reflector mirror 95, a circular halogen lamp 93, a water cooling tube 96, and a light transmitting material. These light-heated heaters 92 are arranged between rows of fluid ejection nozzles 8 as shown in the plan view of FIG. 15. ing.
  • the light heating type heater 92 has a water cooling tube 96 through which a low-temperature liquid such as water flows, and cooling is performed while the lamp is on, so that a rise in the temperature of the heater unit itself can be suppressed. And the deterioration of the reflector mirror 95 can be prevented.
  • the water cooling pipe 96 provided in the heater unit may be omitted. Also, depending on the operating condition of the heater 92, even if the heater 92 is not attached to the supply pipe 7, the water cooling pipe 96 may be omitted.
  • the inside of the light-heated heater 92 is separated from the outside by the lid force bar 97. I have. Of course, if safety is ensured, the lid strength bar 97 may be omitted.
  • the wafer 1 coated with the resist is carried in and placed on the heat release / absorption plate 2 at very small intervals, and the lamps 93 of the heaters 92 are turned on.
  • the heat radiated from each heater 92 is transmitted to the wafer 1 via the upper wall 5 of the temperature control chamber 6, the heat panel 90, and the heat radiation / absorption plate 2.
  • the temperature of the upper wall 5 of the temperature control room 6, the heat panel 90, the heat dissipation / absorption plate 2 and the like is detected by a sensor (not shown), and the temperature of the wafer 1 is set to the target temperature 15 based on the detected temperature. It is controlled to 0 ° C.
  • the valve 9 is opened, and a low-temperature fluid having a temperature of about 20 ° C. is supplied to the supply pipe 7 from the chiller 16.
  • the low-temperature fluid supplied to the supply pipe 7 is jetted through a fluid jet nozzle 8 and jetted.
  • the jetted low-temperature fluid collides with the upper inner wall surface 5 of the temperature control chamber 6. Due to the collision of the fluid, the heat transfer coefficient of the upper inner wall surface 5 increases, and the upper surface of the upper wall surface 5 that is in contact with the heat panel 90 can quickly approach the temperature of the low-temperature fluid.
  • the heat of the wafer 1 is radiated through the heat release / absorption plate 2, the heat panel 90, and the upper wall surface 5 of the temperature control chamber, so that the wafer 1 is cooled.
  • the temperature of the upper wall surface 5, the heat panel 90, and the heat release / absorption plate 2 of the temperature control chamber 6 is detected by a sensor (not shown), and based on the detected temperature.
  • the temperature of the wafer 1 is controlled to the target temperature of 20 ° C.
  • the wafer 1 is carried out of the apparatus, and a new wafer 1 coated with a resist is carried in instead, and heated and cooled in the same manner as described above. .
  • heating of the upper wall surface 5 of the temperature control chamber 6 is performed by non-contact heating from the inside of the temperature control chamber 6 by the light heating type heater 92, and the cooling is performed from the temperature control chamber 6 to the inside of the upper part. Since the low-temperature liquid is ejected to the wall surface 5, the thermal response can be made promptly when switching from heating to cooling or from cooling to heating, and the temperature of the wafer 1 can be quickly controlled to a desired temperature. Can be.
  • the temperature control chamber 6 in a closed state is filled with the low-temperature fluid C or the lid of the light-heated heater 92 Even when the low-temperature fluid C remains on the bar 97, it is possible to irradiate the upper wall 5 of the temperature control room 6 without blocking the light of the lamp 93 of the light heating heater 92.
  • the light-heated heater 92 is not separated from the outside by the lid power bar 97 or the like, and is placed in the temperature control chamber 6 where the low-temperature fluid C flows down. It becomes possible to arrange.
  • the light heating type heat unit is attached to the supply pipe 7 through which the low-temperature fluid C flows, the temperature rise of the heater unit itself can be suppressed, and the reflector mirror The deterioration of 95 can be prevented.
  • the heat panel 90 is used as a heat energy transfer means for transferring heat energy between the upper wall surface 5 of the temperature control chamber 6 and the heat release / absorption plate 2.
  • a Peltier element may be used instead of 90.
  • both the heat panel and the veltier element may be used as the thermal energy transfer means.
  • the vertical relationship between the heat panel and the Peltier device is arbitrary.
  • one of the heat release / absorption plate 2 and the heat panel 90 may be omitted.
  • the heat release / absorption plate 2 and the heat panel 90 are omitted, and the wafer 1 is directly supported by the upper wall 5 of the temperature control chamber 6.
  • the light heating type heaters 92 are arranged between the rows of the fluid ejection nozzles 8.
  • the light heating type heater 92 may be arranged below the supply pipe 7 for supplying the air.
  • the fluid ejection nozzle 8 and the supply pipe 7 need to be made of a light-transmitting transparent material.
  • a spiral low-temperature fluid supply pipe 100 as shown in FIG. 17 can be formed.
  • a number of fluid ejection holes 101 are dispersedly arranged in the spiral low-temperature fluid supply pipe 100.
  • the low-temperature fluid jet nozzle 8 may be arranged in the temperature control chamber 6 so as to generate a tornado-shaped swirling flow.
  • a swirling flow nozzle since it has a speed component in the swirling direction in addition to the speed component in the upward direction, the temperature control is performed in comparison with the nozzle of the embodiment in FIG. It will be in contact with the side and ceiling of the room 6 for a long time, and the heat exchange efficiency can be further increased.
  • the arrangement angles of the low-temperature fluid jet nozzles 8 may be arranged one by one so as to be alternately and in a diagonal direction.
  • a plurality of rows of low-temperature fluid jet nozzles 8 may be arranged between the light-heated heaters 92, and furthermore, as shown in Fig. 19 (c), two rows of low-temperature fluid jet nozzles 8 may be arranged.
  • the cryogenic fluid jet nozzles 8 are arranged so that they are arranged alternately one at a time in the opposite diagonal direction.
  • the wall surface of the reflector mirror 95 of the light heating heater 92 and the tube wall surface of the low-temperature fluid jet nozzle 8 may be shared. In this case, since the contact area increases, the cooling effect of the light heating type heater 92 by the low-temperature fluid passing through the low-temperature fluid ejection nozzle 8 is improved.
  • a fluid ejection nozzle unit 11 formed of a material such as plastic or aluminum and having a curved surface formed so as to correspond to the shape of the reflector mirror 95 of the light heating heater 92.
  • Drop light heater 92 into recess 0 Accordingly, the light heating type heater 92 and the fluid ejection nozzle 8 may be arranged.
  • the cooling effect of the light-heated heater 92 is improved, and the positioning of the light-heated heater 92 is facilitated.
  • the fluid ejection nozzle portion 6 is formed into a curved surface, the pressure loss of the flow of the low-temperature fluid is reduced, and a high-speed jet flow can be ejected even at a low pump water pressure.
  • the lid power bar 97 of the light heating type heater 92 may be integrally formed with the fluid ejection nozzle unit i10.
  • the fluid ejection nozzle unit 110 needs to use a transparent material such as plastic, acrylic, or polycarbonate.
  • a circular lamp 93 is used as the light heater 92, but a plurality of lamps having a spherical shape may be arranged in a matrix.
  • a material of the fluid ejection nozzle a metal such as aluminum, stainless steel, and copper, or a plastic material is used.
  • the shape of the fluid ejection hole in the fluid ejection nozzle 8 any shape such as a circle, a slit, and a rectangle may be adopted.
  • the fluid ejection nozzle 8 of the seventh embodiment may be used as a mist nozzle to generate a mist-like fluid, thereby obtaining a turbulent flow effect and improving the heat transfer capability.
  • a perforated plate made of a light transmissive material may be provided above the mist nozzle of the temperature control chamber 6 to further improve the turbulence effect.
  • the turbulence effect may be further enhanced by roughening the surface of the inner wall surface 5 by providing irregularities or the like on the upper inner wall surface 5 of the temperature control chamber 6, providing protrusions, or shaving the surface.
  • the fluid ejected from the nozzle 8 has a mountain-shaped flow velocity space distribution, and by overlapping the skirt portion of the mountain, the flow velocity distribution is distributed over the entire upper wall surface 5 of the temperature control chamber 6. Make it uniform.
  • the low-temperature fluid is supplied through the fluid ejection nozzle 8.
  • the wafer 1 is cooled in such a manner as described above.
  • a high-temperature fluid for heating may be supplied to the fluid ejection nozzle 8.
  • the object to be temperature-controlled can be heated at a higher speed by the synergistic effect of the heating by the ejection of the high-temperature fluid and the heating by the light heater 92.
  • the present invention can be applied to a temperature controlled object other than a semiconductor wafer.
  • the heat exchange efficiency can be increased as compared with the conventional case, and the temperature control target can be quickly controlled to a desired temperature.
  • the temperature of the object to be temperature-controlled is controlled by ejecting the fluid adjusted to a predetermined temperature to the upper inner wall surface of the fluid ejection chamber arranged below the support plate for supporting the object to be temperature-controlled. Since the light energy of the near-infrared light castle or the visible light castle is used, the upper inner wall surface of the fluid ejection chamber is heated in a non-contact manner by a light heating type heater means. The exchange efficiency can be increased, and the temperature of the object can be quickly controlled to a desired temperature.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un dispositif de régulation de la température qui comprend: une plaque de support soutenant un objet dont la température doit être régulée; des chambres d'éjection de fluide dont les surfaces des parois supérieures sont adjacentes à la face inférieure de la plaque de support; des buses d'éjection de fluide possédant plusieurs orifices d'éjection de fluide par lesquels un fluide est projeté contre la surface des parois supérieures internes des chambres d'éjection de fluide; un système d'amenée de fluide servant à fournir aux buses d'éjection un fluide dont la température est régulée de manière à correspondre à une valeur prédéterminée; et un système d'évacuation de fluide pour évacuer le fluide éjecté par les orifices d'éjection de fluide depuis les chambres d'éjection de fluide. Ce dispositif permet de réguler rapidement la température d'un objet tel qu'une plaquette pour la porter à une température désirée, avec une efficacité élevée d'échange thermique.
PCT/JP1998/001589 1997-04-07 1998-04-07 Dispositif de regulation de la temperature WO1998045875A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP9088236A JPH10284382A (ja) 1997-04-07 1997-04-07 温度制御装置
JP9/88236 1997-04-07
JP12093797A JPH10312943A (ja) 1997-05-12 1997-05-12 温度制御装置
JP9/120937 1997-05-12

Publications (1)

Publication Number Publication Date
WO1998045875A1 true WO1998045875A1 (fr) 1998-10-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP1998/001589 WO1998045875A1 (fr) 1997-04-07 1998-04-07 Dispositif de regulation de la temperature

Country Status (2)

Country Link
TW (1) TW389950B (fr)
WO (1) WO1998045875A1 (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001011664A1 (fr) * 1999-08-09 2001-02-15 Ibiden Co., Ltd. Recipient de support et dispositif semiconducteur de fabrication/inspection
WO2001011663A1 (fr) * 1999-08-09 2001-02-15 Ibiden Co., Ltd. Ensemble plaque chauffante
WO2001095388A1 (fr) * 2000-06-07 2001-12-13 Ibiden Co., Ltd. Recipient support, fabrication de semi-conducteurs et dispositif d'inspection
WO2007005196A2 (fr) * 2005-07-01 2007-01-11 Sokudo Co., Ltd. Plaque thermique uniforme a variation d'echelle
US9618858B2 (en) 2010-01-22 2017-04-11 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method involving thermal conditioning of a table
US20210098269A1 (en) * 2019-09-27 2021-04-01 Tokyo Electron Limited Substrate processing apparatus and stage cleaning method
CN114695050A (zh) * 2020-12-31 2022-07-01 中国科学院微电子研究所 一种等离子体刻蚀设备及陶瓷窗口的温控方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100542126B1 (ko) 2003-04-29 2006-01-11 미래산업 주식회사 반도체 소자 테스트 핸들러
JP6205225B2 (ja) * 2013-03-25 2017-09-27 東京エレクトロン株式会社 基板検査装置及び基板温度調整方法
CN113703502B (zh) * 2021-08-31 2022-04-01 合肥工业大学 一种金属切削加工冷却气体射流场的制冷参数调控方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299335A (ja) * 1992-04-21 1993-11-12 Sumitomo Electric Ind Ltd ベーキング装置及びベーキング方法
JPH06244095A (ja) * 1993-02-12 1994-09-02 Dainippon Screen Mfg Co Ltd 基板冷却装置
JPH07235588A (ja) * 1994-02-24 1995-09-05 Hitachi Ltd ウエハチャック及びそれを用いたプローブ検査方法
JPH08273993A (ja) * 1995-03-31 1996-10-18 Dainippon Screen Mfg Co Ltd 基板冷却装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05299335A (ja) * 1992-04-21 1993-11-12 Sumitomo Electric Ind Ltd ベーキング装置及びベーキング方法
JPH06244095A (ja) * 1993-02-12 1994-09-02 Dainippon Screen Mfg Co Ltd 基板冷却装置
JPH07235588A (ja) * 1994-02-24 1995-09-05 Hitachi Ltd ウエハチャック及びそれを用いたプローブ検査方法
JPH08273993A (ja) * 1995-03-31 1996-10-18 Dainippon Screen Mfg Co Ltd 基板冷却装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001011664A1 (fr) * 1999-08-09 2001-02-15 Ibiden Co., Ltd. Recipient de support et dispositif semiconducteur de fabrication/inspection
WO2001011663A1 (fr) * 1999-08-09 2001-02-15 Ibiden Co., Ltd. Ensemble plaque chauffante
WO2001095388A1 (fr) * 2000-06-07 2001-12-13 Ibiden Co., Ltd. Recipient support, fabrication de semi-conducteurs et dispositif d'inspection
WO2007005196A2 (fr) * 2005-07-01 2007-01-11 Sokudo Co., Ltd. Plaque thermique uniforme a variation d'echelle
WO2007005196A3 (fr) * 2005-07-01 2007-04-05 Sukudo Co Ltd Plaque thermique uniforme a variation d'echelle
US9618858B2 (en) 2010-01-22 2017-04-11 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method involving thermal conditioning of a table
US10191377B2 (en) 2010-01-22 2019-01-29 Asml Netherlands, B.V. Lithographic apparatus and a device manufacturing method
USRE49297E1 (en) 2010-01-22 2022-11-15 Asml Netherlands B.V. Lithographic apparatus and a device manufacturing method
US20210098269A1 (en) * 2019-09-27 2021-04-01 Tokyo Electron Limited Substrate processing apparatus and stage cleaning method
CN114695050A (zh) * 2020-12-31 2022-07-01 中国科学院微电子研究所 一种等离子体刻蚀设备及陶瓷窗口的温控方法

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