DE3882445T2 - Halbleiterspeichergerät mit Fehlerprüfschaltung. - Google Patents

Halbleiterspeichergerät mit Fehlerprüfschaltung.

Info

Publication number
DE3882445T2
DE3882445T2 DE88304469T DE3882445T DE3882445T2 DE 3882445 T2 DE3882445 T2 DE 3882445T2 DE 88304469 T DE88304469 T DE 88304469T DE 3882445 T DE3882445 T DE 3882445T DE 3882445 T2 DE3882445 T2 DE 3882445T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
error checking
checking circuit
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88304469T
Other languages
English (en)
Other versions
DE3882445D1 (de
Inventor
Hiromi Kawashima
Ryoji Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3882445D1 publication Critical patent/DE3882445D1/de
Publication of DE3882445T2 publication Critical patent/DE3882445T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
    • G06F11/1076—Parity data used in redundant arrays of independent storages, e.g. in RAID systems
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE88304469T 1987-05-19 1988-05-17 Halbleiterspeichergerät mit Fehlerprüfschaltung. Expired - Fee Related DE3882445T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62120297A JPS63285800A (ja) 1987-05-19 1987-05-19 半導体メモリ装置

Publications (2)

Publication Number Publication Date
DE3882445D1 DE3882445D1 (de) 1993-08-26
DE3882445T2 true DE3882445T2 (de) 1993-11-18

Family

ID=14782747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88304469T Expired - Fee Related DE3882445T2 (de) 1987-05-19 1988-05-17 Halbleiterspeichergerät mit Fehlerprüfschaltung.

Country Status (5)

Country Link
US (1) US4937830A (de)
EP (1) EP0294947B1 (de)
JP (1) JPS63285800A (de)
KR (1) KR910007408B1 (de)
DE (1) DE3882445T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03241594A (ja) * 1990-02-19 1991-10-28 Fujitsu Ltd 半導体メモリのセンス回路
US5307356A (en) * 1990-04-16 1994-04-26 International Business Machines Corporation Interlocked on-chip ECC system
KR940010838B1 (ko) * 1991-10-28 1994-11-17 삼성전자 주식회사 데이타 출력 콘트롤 회로
US6781895B1 (en) * 1991-12-19 2004-08-24 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
JP3495337B2 (ja) * 1991-12-19 2004-02-09 株式会社東芝 メモリベリファイ回路
JP3883534B2 (ja) * 1991-12-19 2007-02-21 株式会社東芝 不揮発性半導体記憶装置
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
KR950008789B1 (ko) * 1992-07-30 1995-08-08 삼성전자주식회사 멀티-이씨씨(ecc)회로를 내장하는 반도체 메모리 장치
US5550842A (en) * 1994-10-28 1996-08-27 Altera Corporation EEPROM verification circuit with PMOS transistors
US5745431A (en) * 1996-01-05 1998-04-28 International Business Machines Corporation Address transition detector (ATD) for power conservation
JP3822411B2 (ja) * 2000-03-10 2006-09-20 株式会社東芝 半導体記憶装置
US20040153902A1 (en) * 2003-01-21 2004-08-05 Nexflash Technologies, Inc. Serial flash integrated circuit having error detection and correction
US7099221B2 (en) 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
US20060010339A1 (en) * 2004-06-24 2006-01-12 Klein Dean A Memory system and method having selective ECC during low power refresh
US7340668B2 (en) * 2004-06-25 2008-03-04 Micron Technology, Inc. Low power cost-effective ECC memory system and method
US7116602B2 (en) * 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
US6965537B1 (en) 2004-08-31 2005-11-15 Micron Technology, Inc. Memory system and method using ECC to achieve low power refresh
US7894289B2 (en) 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
US7900120B2 (en) 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data
US8370603B2 (en) 2008-12-23 2013-02-05 Apple Inc. Architecture for address mapping of managed non-volatile memory
US8321647B2 (en) 2009-05-06 2012-11-27 Apple Inc. Multipage preparation commands for non-volatile memory systems
US8438453B2 (en) * 2009-05-06 2013-05-07 Apple Inc. Low latency read operation for managed non-volatile memory
US8495332B2 (en) * 2009-07-24 2013-07-23 Apple Inc. Controller for optimizing throughput of read operations
US8489907B2 (en) * 2009-09-16 2013-07-16 Apple Inc. Method of selective power cycling of components in a memory device independently by reducing power to a memory array or memory controller
US8838877B2 (en) * 2009-09-16 2014-09-16 Apple Inc. File system derived metadata for management of non-volatile memory
US8441881B1 (en) * 2010-07-02 2013-05-14 T-Ram Semiconductor Tracking for read and inverse write back of a group of thyristor-based memory cells

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2925966C2 (de) * 1979-06-27 1982-10-28 Siemens AG, 1000 Berlin und 8000 München Verfahren und Anordnung zur automatischen Erzeugung eines Gültigkeitssignals für aus einem Speicher mit wahlfreiem Zugriff gelesene Datenworte
JPS5771596A (en) * 1980-10-20 1982-05-04 Fujitsu Ltd Nonolithic memory chip provided with correcting function
JPS58139399A (ja) * 1982-02-15 1983-08-18 Hitachi Ltd 半導体記憶装置
JPS59117793A (ja) * 1982-12-24 1984-07-07 Hitachi Micro Comput Eng Ltd 半導体記憶装置
JPH084233B2 (ja) * 1984-06-29 1996-01-17 株式会社日立製作所 誤り訂正符号の復号装置
JPS61165881A (ja) * 1985-01-17 1986-07-26 Matsushita Electric Ind Co Ltd 高速センスアンプ回路
US4726021A (en) * 1985-04-17 1988-02-16 Hitachi, Ltd. Semiconductor memory having error correcting means
JPS6246357A (ja) * 1985-08-23 1987-02-28 Hitachi Vlsi Eng Corp 半導体記憶装置

Also Published As

Publication number Publication date
KR880014572A (ko) 1988-12-24
EP0294947B1 (de) 1993-07-21
JPS63285800A (ja) 1988-11-22
KR910007408B1 (en) 1991-09-25
EP0294947A2 (de) 1988-12-14
DE3882445D1 (de) 1993-08-26
US4937830A (en) 1990-06-26
EP0294947A3 (en) 1990-05-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee