DE3874455D1 - Nichtfluechtiger halbleiterspeicher. - Google Patents

Nichtfluechtiger halbleiterspeicher.

Info

Publication number
DE3874455D1
DE3874455D1 DE8888112161T DE3874455T DE3874455D1 DE 3874455 D1 DE3874455 D1 DE 3874455D1 DE 8888112161 T DE8888112161 T DE 8888112161T DE 3874455 T DE3874455 T DE 3874455T DE 3874455 D1 DE3874455 D1 DE 3874455D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
volatile semiconductor
volatile
memory
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888112161T
Other languages
English (en)
Other versions
DE3874455T2 (de
Inventor
Hidenobu Minagawa
Yuuichi Tatsumi
Hiroshi Iwahashi
Masamichi Asano
Hiroto Nakai
Mizuho Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP18943387A external-priority patent/JPH0766676B2/ja
Priority claimed from JP28574887A external-priority patent/JPH0642551B2/ja
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3874455D1 publication Critical patent/DE3874455D1/de
Publication of DE3874455T2 publication Critical patent/DE3874455T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE8888112161T 1987-07-29 1988-07-27 Nichtfluechtiger halbleiterspeicher. Expired - Lifetime DE3874455T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP18943387A JPH0766676B2 (ja) 1987-07-29 1987-07-29 半導体記憶装置
JP28574887A JPH0642551B2 (ja) 1987-11-12 1987-11-12 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
DE3874455D1 true DE3874455D1 (de) 1992-10-15
DE3874455T2 DE3874455T2 (de) 1993-04-08

Family

ID=26505468

Family Applications (2)

Application Number Title Priority Date Filing Date
DE91102850T Expired - Lifetime DE3884820T2 (de) 1987-07-29 1988-07-27 Nichtflüchtige Halbleiterspeichereinrichtung.
DE8888112161T Expired - Lifetime DE3874455T2 (de) 1987-07-29 1988-07-27 Nichtfluechtiger halbleiterspeicher.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE91102850T Expired - Lifetime DE3884820T2 (de) 1987-07-29 1988-07-27 Nichtflüchtige Halbleiterspeichereinrichtung.

Country Status (4)

Country Link
US (1) US5010520A (de)
EP (2) EP0441409B1 (de)
KR (1) KR910007404B1 (de)
DE (2) DE3884820T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0338067A (ja) * 1989-07-05 1991-02-19 Toshiba Corp 不揮発性半導体メモリ装置
US5452248A (en) * 1991-06-27 1995-09-19 Kabushiki Kaisha Toshiba Method of operating a nonvolatile semiconductor memory device
JP3214715B2 (ja) * 1991-10-25 2001-10-02 ローム株式会社 半導体記憶素子
EP0961289B1 (de) * 1991-12-09 2002-10-02 Fujitsu Limited Flash-Speicher mit besserer Löschbarkeit und dessen Schaltung
JP2839819B2 (ja) * 1993-05-28 1998-12-16 株式会社東芝 不揮発性半導体記憶装置
US5422845A (en) * 1993-09-30 1995-06-06 Intel Corporation Method and device for improved programming threshold voltage distribution in electrically programmable read only memory array
KR0172422B1 (ko) * 1995-06-30 1999-03-30 김광호 스냅백 브레이크다운 현상을 제거한 공통 소오스 라인 제어회로
US6005806A (en) * 1996-03-14 1999-12-21 Altera Corporation Nonvolatile configuration cells and cell arrays
US5798966A (en) * 1997-03-31 1998-08-25 Intel Corporation Flash memory VDS compensation techiques to reduce programming variability
US6891758B2 (en) * 2003-05-08 2005-05-10 Micron Technology, Inc. Position based erase verification levels in a flash memory device
US7453716B2 (en) * 2004-10-26 2008-11-18 Samsung Electronics Co., Ltd Semiconductor memory device with stacked control transistors
US8179711B2 (en) * 2004-10-26 2012-05-15 Samsung Electronics Co., Ltd. Semiconductor memory device with stacked memory cell and method of manufacturing the stacked memory cell

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2505245B2 (de) * 1975-02-07 1977-07-07 Siemens AG, 1000 Berlin und 8000 München Festwertspeicherbaustein
JPS5693363A (en) * 1979-12-04 1981-07-28 Fujitsu Ltd Semiconductor memory
DE3176751D1 (en) * 1980-10-15 1988-06-23 Toshiba Kk Semiconductor memory with improved data programming time
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
US4653026A (en) * 1981-08-12 1987-03-24 Hitachi, Ltd. Nonvolatile memory device or a single crystal silicon film
JPS5850700A (ja) * 1981-09-21 1983-03-25 Hitachi Ltd Ｅｐｒｏｍ書込み回路
US4589097A (en) * 1982-03-16 1986-05-13 Citizen Watch Company Limited Non-volatile memory circuit having a common write and erase terminal
US4791613A (en) * 1983-09-21 1988-12-13 Inmos Corporation Bit line and column circuitry used in a semiconductor memory
NL8400326A (nl) * 1984-02-03 1985-09-02 Philips Nv Geintegreerde schakeling met veldeffecttransistoren en een programmeerbaar leesgeheugen.
US4725915A (en) * 1984-03-31 1988-02-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US4694429A (en) * 1984-11-29 1987-09-15 Kabushiki Kaisha Toshiba Semiconductor memory device
US4730279A (en) * 1985-03-30 1988-03-08 Kabushiki Kaisha Toshiba Static semiconductor memory device
JPH0770230B2 (ja) * 1985-04-18 1995-07-31 日本電気株式会社 半導体メモリ
JPS6247899A (ja) * 1985-08-26 1987-03-02 Hitachi Ltd Ｅｐｒｏｍ装置
JP2534733B2 (ja) * 1987-10-09 1996-09-18 日本電気株式会社 不揮発性半導体記憶装置
US4858187A (en) * 1988-02-01 1989-08-15 Texas Instruments Incorporated Programming implementation circuit

Also Published As

Publication number Publication date
KR910007404B1 (ko) 1991-09-25
DE3874455T2 (de) 1993-04-08
EP0441409A3 (de) 1991-08-28
KR890002892A (ko) 1989-04-11
US5010520A (en) 1991-04-23
EP0301521A1 (de) 1989-02-01
EP0441409B1 (de) 1993-10-06
DE3884820T2 (de) 1994-01-27
EP0301521B1 (de) 1992-09-09
DE3884820D1 (de) 1993-11-11
EP0441409A2 (de) 1991-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition