DE3871823D1 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number
DE3871823D1
DE3871823D1 DE8888103704T DE3871823T DE3871823D1 DE 3871823 D1 DE3871823 D1 DE 3871823D1 DE 8888103704 T DE8888103704 T DE 8888103704T DE 3871823 T DE3871823 T DE 3871823T DE 3871823 D1 DE3871823 D1 DE 3871823D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory arrangement
arrangement
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888103704T
Other languages
English (en)
Other versions
DE3871823T2 (de
Inventor
Shinichi C O Patent Div Tanaka
Masayuki C O Patent Divis Hori
Kazunori C O Patent D Kanebako
Noriyoshi C O Patent Di Tozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3871823D1 publication Critical patent/DE3871823D1/de
Publication of DE3871823T2 publication Critical patent/DE3871823T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE8888103704T 1987-03-13 1988-03-09 Halbleiterspeicheranordnung. Expired - Lifetime DE3871823T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62058109A JPH0640587B2 (ja) 1987-03-13 1987-03-13 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3871823D1 true DE3871823D1 (de) 1992-07-16
DE3871823T2 DE3871823T2 (de) 1992-12-10

Family

ID=13074805

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888103704T Expired - Lifetime DE3871823T2 (de) 1987-03-13 1988-03-09 Halbleiterspeicheranordnung.

Country Status (4)

Country Link
EP (1) EP0282023B1 (de)
JP (1) JPH0640587B2 (de)
KR (1) KR910007375B1 (de)
DE (1) DE3871823T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0640588B2 (ja) * 1987-03-13 1994-05-25 株式会社東芝 半導体記憶装置
US5303185A (en) * 1988-02-05 1994-04-12 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
US5162247A (en) * 1988-02-05 1992-11-10 Emanuel Hazani Process for trench-isolated self-aligned split-gate EEPROM transistor and memory array
US5166904A (en) * 1988-02-05 1992-11-24 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
US5332914A (en) * 1988-02-05 1994-07-26 Emanuel Hazani EEPROM cell structure and architecture with increased capacitance and with programming and erase terminals shared between several cells
KR910005235B1 (ko) * 1988-12-01 1991-07-24 재단법인 한국화학연구소 흡수성 고분자 물질 및 그의 제조방법
JP2679389B2 (ja) * 1990-10-12 1997-11-19 日本電気株式会社 不揮発性半導体記憶セルのデータ消去方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0054355B1 (de) * 1980-12-08 1986-04-16 Kabushiki Kaisha Toshiba Halbleiterspeicheranordnung
DE3171836D1 (en) * 1980-12-08 1985-09-19 Toshiba Kk Semiconductor memory device
JPS60250676A (ja) * 1984-05-25 1985-12-11 Toshiba Corp 半導体記憶装置
JPH0697695B2 (ja) * 1984-11-16 1994-11-30 株式会社日立製作所 半導体集積回路装置の製造方法
JPS61136274A (ja) * 1984-12-07 1986-06-24 Toshiba Corp 半導体装置
JPS61225872A (ja) * 1985-03-29 1986-10-07 Nippon Denso Co Ltd 半導体不揮発性記憶装置の製造方法
JPH0640588B2 (ja) * 1987-03-13 1994-05-25 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
JPS63224366A (ja) 1988-09-19
EP0282023B1 (de) 1992-06-10
DE3871823T2 (de) 1992-12-10
EP0282023A2 (de) 1988-09-14
JPH0640587B2 (ja) 1994-05-25
KR910007375B1 (ko) 1991-09-25
EP0282023A3 (en) 1989-05-17
KR880011928A (ko) 1988-10-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee