DE3856450D1 - Verfahren zur Herstellung von einer elektrisch programmierbaren integrierten Schaltung mit schmelzbaren Kontaktbrücken - Google Patents

Verfahren zur Herstellung von einer elektrisch programmierbaren integrierten Schaltung mit schmelzbaren Kontaktbrücken

Info

Publication number
DE3856450D1
DE3856450D1 DE3856450T DE3856450T DE3856450D1 DE 3856450 D1 DE3856450 D1 DE 3856450D1 DE 3856450 T DE3856450 T DE 3856450T DE 3856450 T DE3856450 T DE 3856450T DE 3856450 D1 DE3856450 D1 DE 3856450D1
Authority
DE
Germany
Prior art keywords
producing
integrated circuit
electrically programmable
programmable integrated
contact bridges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3856450T
Other languages
English (en)
Other versions
DE3856450T2 (de
Inventor
Joerg Naumann
Thomas Scharnagl
Leo Stroth
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Deutschland GmbH
Original Assignee
Texas Instruments Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Deutschland GmbH filed Critical Texas Instruments Deutschland GmbH
Priority to DE3856450T priority Critical patent/DE3856450T2/de
Publication of DE3856450D1 publication Critical patent/DE3856450D1/de
Application granted granted Critical
Publication of DE3856450T2 publication Critical patent/DE3856450T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE3856450T 1987-09-19 1988-08-24 Verfahren zur Herstellung von einer elektrisch programmierbaren integrierten Schaltung mit schmelzbaren Kontaktbrücken Expired - Lifetime DE3856450T2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE3856450T DE3856450T2 (de) 1987-09-19 1988-08-24 Verfahren zur Herstellung von einer elektrisch programmierbaren integrierten Schaltung mit schmelzbaren Kontaktbrücken

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19873731621 DE3731621A1 (de) 1987-09-19 1987-09-19 Verfahren zum herstellen einer elektrisch programmierbaren integrierten schaltung
DE3856450T DE3856450T2 (de) 1987-09-19 1988-08-24 Verfahren zur Herstellung von einer elektrisch programmierbaren integrierten Schaltung mit schmelzbaren Kontaktbrücken

Publications (2)

Publication Number Publication Date
DE3856450D1 true DE3856450D1 (de) 2001-02-15
DE3856450T2 DE3856450T2 (de) 2001-06-07

Family

ID=6336432

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19873731621 Ceased DE3731621A1 (de) 1987-09-19 1987-09-19 Verfahren zum herstellen einer elektrisch programmierbaren integrierten schaltung
DE3856450T Expired - Lifetime DE3856450T2 (de) 1987-09-19 1988-08-24 Verfahren zur Herstellung von einer elektrisch programmierbaren integrierten Schaltung mit schmelzbaren Kontaktbrücken

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19873731621 Ceased DE3731621A1 (de) 1987-09-19 1987-09-19 Verfahren zum herstellen einer elektrisch programmierbaren integrierten schaltung

Country Status (4)

Country Link
US (1) US4882293A (de)
EP (1) EP0307671B1 (de)
JP (1) JP2769332B2 (de)
DE (2) DE3731621A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015604A (en) * 1989-08-18 1991-05-14 North American Philips Corp., Signetics Division Fabrication method using oxidation to control size of fusible link
US5502315A (en) * 1989-09-07 1996-03-26 Quicklogic Corporation Electrically programmable interconnect structure having a PECVD amorphous silicon element
US5989943A (en) * 1989-09-07 1999-11-23 Quicklogic Corporation Method for fabrication of programmable interconnect structure
US5041191A (en) * 1989-11-13 1991-08-20 Rockwell International Corporation Diffusion barrier for thin film hybrid circuits
DE69102851T2 (de) * 1990-10-09 1995-02-16 Nippon Electric Co Verfahren zur Herstellung eines Ti/TiN/Al Kontaktes unter Benutzung eines reaktiven Zerstäubungsprozesses.
US5225372A (en) * 1990-12-24 1993-07-06 Motorola, Inc. Method of making a semiconductor device having an improved metallization structure
US5380678A (en) * 1991-03-12 1995-01-10 Yu; Chang Bilayer barrier metal method for obtaining 100% step-coverage in contact vias without junction degradation
US5290734A (en) * 1991-06-04 1994-03-01 Vlsi Technology, Inc. Method for making anti-fuse structures
EP0563852A1 (de) * 1992-04-02 1993-10-06 Siemens Aktiengesellschaft Zickzack-Schmelzvorrichtung für Anwendungen mit reduziertem Schmelzstrom
US5389814A (en) * 1993-02-26 1995-02-14 International Business Machines Corporation Electrically blowable fuse structure for organic insulators
US5357397A (en) * 1993-03-15 1994-10-18 Hewlett-Packard Company Electric field emitter device for electrostatic discharge protection of integrated circuits
US5374590A (en) * 1993-04-28 1994-12-20 International Business Machines Corporation Fabrication and laser deletion of microfuses
US5457059A (en) * 1994-04-28 1995-10-10 Texas Instruments Incorporated Method for forming TiW fuses in high performance BiCMOS process
KR100340906B1 (ko) * 1999-08-23 2002-06-20 박종섭 반도체 장치의 퓨즈 구조
WO2004066384A1 (de) * 2003-01-23 2004-08-05 Fraunhofer Ges Forschung Programmierbare schaltungsstruktur und verfahren zur herstellung derselben
DE10307933B3 (de) * 2003-02-25 2004-06-03 Ivoclar Vivadent Ag Kalibriervorrichtung

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
US4209894A (en) * 1978-04-27 1980-07-01 Texas Instruments Incorporated Fusible-link semiconductor memory
US4184933A (en) * 1978-11-29 1980-01-22 Harris Corporation Method of fabricating two level interconnects and fuse on an IC
US4233671A (en) * 1979-01-05 1980-11-11 Stanford University Read only memory and integrated circuit and method of programming by laser means
US4238839A (en) * 1979-04-19 1980-12-09 National Semiconductor Corporation Laser programmable read only memory
US4289574A (en) * 1979-04-30 1981-09-15 Fairchild Camera & Instrument Corp. Process for patterning metal connections on a semiconductor structure by using an aluminum oxide etch resistant layer
NL8002634A (nl) * 1980-05-08 1981-12-01 Philips Nv Programmeerbare halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
JPS5763854A (en) * 1980-10-07 1982-04-17 Toshiba Corp Semiconductor device
JPS5816340A (ja) * 1981-06-05 1983-01-31 Sony Corp ワ−ドプロセツサ
JPS5948543B2 (ja) * 1981-10-13 1984-11-27 株式会社東芝 半導体装置
JPS59501139A (ja) * 1981-11-12 1984-06-28 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド 融合された珪化白金ヒュ−ズおよびショットキダイオ−ドならびにその製造方法
JPS5913368A (ja) * 1982-07-14 1984-01-24 Fujitsu Ltd 半導体装置
JPS5954240A (ja) * 1982-09-21 1984-03-29 Mitsubishi Electric Corp 集積回路
JPS59214239A (ja) * 1983-05-16 1984-12-04 Fujitsu Ltd 半導体装置の製造方法
JPS60136334A (ja) * 1983-12-21 1985-07-19 アドバンスト・マイクロ・デバイシズ・インコーポレイテッド 集積回路用ヒユ−ズ素子及びその製造方法
JPS60176250A (ja) * 1984-02-23 1985-09-10 Toshiba Corp 半導体装置の製造方法
US4569124A (en) * 1984-05-22 1986-02-11 Hughes Aircraft Company Method for forming thin conducting lines by ion implantation and preferential etching
JPH0719842B2 (ja) * 1985-05-23 1995-03-06 三菱電機株式会社 半導体装置の冗長回路
US4679310A (en) * 1985-10-31 1987-07-14 Advanced Micro Devices, Inc. Method of making improved metal silicide fuse for integrated circuit structure
US4740485A (en) * 1986-07-22 1988-04-26 Monolithic Memories, Inc. Method for forming a fuse

Also Published As

Publication number Publication date
EP0307671A2 (de) 1989-03-22
US4882293A (en) 1989-11-21
EP0307671B1 (de) 2001-01-10
JPH01157550A (ja) 1989-06-20
EP0307671A3 (de) 1990-10-10
DE3731621A1 (de) 1989-03-30
DE3856450T2 (de) 2001-06-07
JP2769332B2 (ja) 1998-06-25

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