DE3855506T2 - Differenzverstärker und Strommessschaltung mit einem solchen Verstärker - Google Patents

Differenzverstärker und Strommessschaltung mit einem solchen Verstärker

Info

Publication number
DE3855506T2
DE3855506T2 DE3855506T DE3855506T DE3855506T2 DE 3855506 T2 DE3855506 T2 DE 3855506T2 DE 3855506 T DE3855506 T DE 3855506T DE 3855506 T DE3855506 T DE 3855506T DE 3855506 T2 DE3855506 T2 DE 3855506T2
Authority
DE
Germany
Prior art keywords
amplifier
measuring circuit
current measuring
differential amplifier
differential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3855506T
Other languages
English (en)
Other versions
DE3855506D1 (de
Inventor
Philip Harvey Bird
Desmond Ross Armstrong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics NV filed Critical Philips Electronics NV
Publication of DE3855506D1 publication Critical patent/DE3855506D1/de
Application granted granted Critical
Publication of DE3855506T2 publication Critical patent/DE3855506T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Measurement Of Current Or Voltage (AREA)
DE3855506T 1987-06-08 1988-06-06 Differenzverstärker und Strommessschaltung mit einem solchen Verstärker Expired - Fee Related DE3855506T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08713387A GB2206010A (en) 1987-06-08 1987-06-08 Differential amplifier and current sensing circuit including such an amplifier

Publications (2)

Publication Number Publication Date
DE3855506D1 DE3855506D1 (de) 1996-10-10
DE3855506T2 true DE3855506T2 (de) 1997-03-06

Family

ID=10618566

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855506T Expired - Fee Related DE3855506T2 (de) 1987-06-08 1988-06-06 Differenzverstärker und Strommessschaltung mit einem solchen Verstärker

Country Status (6)

Country Link
US (1) US4885477A (de)
EP (1) EP0294880B1 (de)
JP (1) JP2628694B2 (de)
KR (1) KR0128731B1 (de)
DE (1) DE3855506T2 (de)
GB (1) GB2206010A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015204518A1 (de) * 2015-03-12 2016-09-15 Dialog Semiconductor (Uk) Limited Offset-Kompensation für einen VDS-Ausgleicher in einer Stromerfassungsschaltung
DE102015222570A1 (de) * 2015-11-16 2017-05-18 Dialog Semiconductor (Uk) Limited Schaltung und verfahren zur stromerfassung mit hoher genauigkeit
DE102009001899B4 (de) 2009-03-26 2024-01-18 Robert Bosch Gmbh Messen eines Laststroms eines Unterbrechers

Families Citing this family (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210475B1 (en) * 1989-05-09 1996-04-23 United Technologies Automotive Circuit sensing circuit for use with a current controlling device in a power delivery circuit
GB8913439D0 (en) * 1989-06-12 1989-08-02 Inmos Ltd Current mirror circuit
US5128823A (en) * 1989-06-14 1992-07-07 Nippondenso Co., Ltd. Power semiconductor apparatus
JPH0738188B2 (ja) * 1989-10-17 1995-04-26 三菱電機株式会社 マイクロコンピュータ及びこれを用いた非接触ｉｃカード
IT1236787B (it) * 1989-11-13 1993-04-02 Italtel Spa Circuito amplificatore di potenza cmos con struttura completamente differenziale.
US5021861A (en) * 1990-05-23 1991-06-04 North Carolina State University Integrated circuit power device with automatic removal of defective devices and method of fabricating same
JPH07105722B2 (ja) * 1990-06-05 1995-11-13 株式会社東芝 Ｄ／ａコンバータ
JPH04120907A (ja) * 1990-09-12 1992-04-21 Fujitsu Ltd オペアンプ回路
JPH07112155B2 (ja) * 1990-11-16 1995-11-29 株式会社東芝 スイッチング定電流源回路
JPH0514073A (ja) * 1991-06-28 1993-01-22 Fuji Electric Co Ltd 差動増幅器及び比較器
US6320429B1 (en) * 1991-06-28 2001-11-20 Fuji Electric Co., Ltd. Integrated circuit having a comparator circuit including at least one differential amplifier
US5495155A (en) * 1991-06-28 1996-02-27 United Technologies Corporation Device in a power delivery circuit
US5153499A (en) * 1991-09-18 1992-10-06 Allied-Signal Inc. Precision voltage controlled current source with variable compliance
US5374857A (en) * 1992-05-29 1994-12-20 Sgs-Thomson Microelectronics, Inc. Circuit for providing drive current to a motor using a sensefet current sensing device and a fast amplifier
JPH06216666A (ja) * 1992-11-30 1994-08-05 Sharp Corp 差動増幅器
FR2703526B1 (fr) * 1993-04-02 1995-05-19 Gemplus Card Int Circuit de déclenchement automatique.
US5519310A (en) * 1993-09-23 1996-05-21 At&T Global Information Solutions Company Voltage-to-current converter without series sensing resistor
US5646520A (en) * 1994-06-28 1997-07-08 National Semiconductor Corporation Methods and apparatus for sensing currents
JPH08139579A (ja) * 1994-11-15 1996-05-31 Mitsubishi Electric Corp 電流源及び半導体集積回路装置
JPH08154022A (ja) * 1994-11-29 1996-06-11 Nec Corp 過電流保護回路付き増幅回路
DE69533308T2 (de) * 1995-05-16 2004-11-25 Stmicroelectronics S.R.L., Agrate Brianza Verfahren und zugehöriger Schaltkreis zur Feststellung einer Schaltungsunterbrechung
DE19520735C2 (de) * 1995-06-07 1999-07-01 Siemens Ag Schaltungsanordnung zum Erfassen des Laststroms eines Leistungs-Halbleiterbauelementes mit sourceseitiger Last
JP3394389B2 (ja) * 1995-07-13 2003-04-07 シャープ株式会社 直流安定化電源回路
US5757174A (en) * 1995-07-19 1998-05-26 Micro Linear Corporation Current sensing technique using MOS transistor scaling with matched current sources
KR0158625B1 (ko) * 1995-10-18 1998-12-01 김광호 자유 컬렉터단자를 구비한 바이폴라 트랜지스터 회로
JP3627385B2 (ja) * 1996-06-28 2005-03-09 株式会社デンソー 電流検出機能を有する負荷電流供給回路
EP0918997A1 (de) * 1996-08-14 1999-06-02 Siemens Aktiengesellschaft Schaltungsanordnung zum erfassen des laststroms eines leistungs-halbleiterbauelements mit sourceseitiger last
US5873053A (en) * 1997-04-08 1999-02-16 International Business Machines Corporation On-chip thermometry for control of chip operating temperature
DE19729904A1 (de) * 1997-07-12 1999-02-11 Kammerer Gmbh M Schaltungsanordnung zur Überwachung von durch eine Last fließenden Strömen
US5867014A (en) * 1997-11-20 1999-02-02 Impala Linear Corporation Current sense circuit having multiple pilot and reference transistors
DE19838657B4 (de) * 1998-08-25 2008-01-24 Infineon Technologies Ag Schaltungsanordnung zum Erfassen des Laststromes eines Leistungs-Feldeffekt-Halbleiterbauelementes
DE19844665C1 (de) * 1998-09-29 2000-03-30 Siemens Ag Schaltungsanordnung zur Steuerung und Erfassung des Laststromes durch eine Last
JP3476419B2 (ja) * 2000-06-28 2003-12-10 Ｎｅｃエレクトロニクス株式会社 半導体回路
JP2004516458A (ja) * 2000-10-13 2004-06-03 プリマリオン， インコーポレイテッド 電流センシングのためのシステムおよび方法
US7474536B2 (en) * 2000-10-27 2009-01-06 Ridley Ray B Audio sound quality enhancement apparatus and method
US6765802B1 (en) 2000-10-27 2004-07-20 Ridley Engineering, Inc. Audio sound quality enhancement apparatus
JP4659235B2 (ja) * 2001-02-28 2011-03-30 浜松ホトニクス株式会社 発光素子駆動回路
US6770911B2 (en) * 2001-09-12 2004-08-03 Cree, Inc. Large area silicon carbide devices
US6514779B1 (en) 2001-10-17 2003-02-04 Cree, Inc. Large area silicon carbide devices and manufacturing methods therefor
JP4301760B2 (ja) * 2002-02-26 2009-07-22 株式会社ルネサステクノロジ 半導体装置
US6781459B1 (en) 2003-04-24 2004-08-24 Omega Reception Technologies, Inc. Circuit for improved differential amplifier and other applications
TWI294683B (en) * 2004-08-23 2008-03-11 Monolithic Power Systems Inc A fault protection scheme for ccfl integrated circuits
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
KR100691349B1 (ko) 2005-07-20 2007-03-12 삼성전자주식회사 멀티 파워 시스템에 사용되는 차동 회로, 출력 버퍼 회로및 반도체 집적 회로
JP4842614B2 (ja) * 2005-10-27 2011-12-21 ルネサスエレクトロニクス株式会社 電流検出回路
CN101453818B (zh) 2007-11-29 2014-03-19 杭州茂力半导体技术有限公司 放电灯的电路保护和调节装置
US7994766B2 (en) * 2008-05-30 2011-08-09 Freescale Semiconductor, Inc. Differential current sensor device and method
DE102008032556B3 (de) * 2008-07-10 2009-09-10 Infineon Technologies Austria Ag Leistungsschalter mit einer Überstromschutzvorrichtung
JP5135199B2 (ja) * 2008-12-22 2013-01-30 パナソニック株式会社 電流検出回路およびそれを用いた電圧コンバータ
US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
US8530286B2 (en) 2010-04-12 2013-09-10 Suvolta, Inc. Low power semiconductor transistor structure and method of fabrication thereof
US8569128B2 (en) 2010-06-21 2013-10-29 Suvolta, Inc. Semiconductor structure and method of fabrication thereof with mixed metal types
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
US8648586B2 (en) * 2011-01-11 2014-02-11 Cadence Ams Design India Private Limited Circuit for sensing load current of a voltage regulator
US8461875B1 (en) 2011-02-18 2013-06-11 Suvolta, Inc. Digital circuits having improved transistors, and methods therefor
US8525271B2 (en) 2011-03-03 2013-09-03 Suvolta, Inc. Semiconductor structure with improved channel stack and method for fabrication thereof
US8400219B2 (en) * 2011-03-24 2013-03-19 Suvolta, Inc. Analog circuits having improved transistors, and methods therefor
US8748270B1 (en) 2011-03-30 2014-06-10 Suvolta, Inc. Process for manufacturing an improved analog transistor
JP5666694B2 (ja) * 2011-04-05 2015-02-12 ルネサスエレクトロニクス株式会社 負荷電流検出回路
US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8796048B1 (en) 2011-05-11 2014-08-05 Suvolta, Inc. Monitoring and measurement of thin film layers
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
US8629016B1 (en) 2011-07-26 2014-01-14 Suvolta, Inc. Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
WO2013022753A2 (en) 2011-08-05 2013-02-14 Suvolta, Inc. Semiconductor devices having fin structures and fabrication methods thereof
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
EP2592742A1 (de) * 2011-11-14 2013-05-15 ST-Ericsson SA Schaltung mit stromgesteuerter Frequenz
US8895327B1 (en) 2011-12-09 2014-11-25 Suvolta, Inc. Tipless transistors, short-tip transistors, and methods and circuits therefor
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
US8883600B1 (en) 2011-12-22 2014-11-11 Suvolta, Inc. Transistor having reduced junction leakage and methods of forming thereof
US8599623B1 (en) 2011-12-23 2013-12-03 Suvolta, Inc. Circuits and methods for measuring circuit elements in an integrated circuit device
US8970289B1 (en) 2012-01-23 2015-03-03 Suvolta, Inc. Circuits and devices for generating bi-directional body bias voltages, and methods therefor
US8877619B1 (en) 2012-01-23 2014-11-04 Suvolta, Inc. Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
US9093550B1 (en) 2012-01-31 2015-07-28 Mie Fujitsu Semiconductor Limited Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
US9406567B1 (en) 2012-02-28 2016-08-02 Mie Fujitsu Semiconductor Limited Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
US8863064B1 (en) 2012-03-23 2014-10-14 Suvolta, Inc. SRAM cell layout structure and devices therefrom
US9299698B2 (en) 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
US8637955B1 (en) 2012-08-31 2014-01-28 Suvolta, Inc. Semiconductor structure with reduced junction leakage and method of fabrication thereof
US9112057B1 (en) 2012-09-18 2015-08-18 Mie Fujitsu Semiconductor Limited Semiconductor devices with dopant migration suppression and method of fabrication thereof
US9041126B2 (en) 2012-09-21 2015-05-26 Mie Fujitsu Semiconductor Limited Deeply depleted MOS transistors having a screening layer and methods thereof
CN104854698A (zh) 2012-10-31 2015-08-19 三重富士通半导体有限责任公司 具有低变化晶体管外围电路的dram型器件以及相关方法
US8816754B1 (en) 2012-11-02 2014-08-26 Suvolta, Inc. Body bias circuits and methods
US9093997B1 (en) 2012-11-15 2015-07-28 Mie Fujitsu Semiconductor Limited Slew based process and bias monitors and related methods
US9070477B1 (en) 2012-12-12 2015-06-30 Mie Fujitsu Semiconductor Limited Bit interleaved low voltage static random access memory (SRAM) and related methods
US9112484B1 (en) 2012-12-20 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit process and bias monitors and related methods
US9268885B1 (en) 2013-02-28 2016-02-23 Mie Fujitsu Semiconductor Limited Integrated circuit device methods and models with predicted device metric variations
US9299801B1 (en) 2013-03-14 2016-03-29 Mie Fujitsu Semiconductor Limited Method for fabricating a transistor device with a tuned dopant profile
US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
TWI535199B (zh) * 2014-05-15 2016-05-21 聯詠科技股份有限公司 運算放大器
CN105099381B (zh) * 2014-05-23 2018-12-14 联咏科技股份有限公司 运算放大器
US9710006B2 (en) 2014-07-25 2017-07-18 Mie Fujitsu Semiconductor Limited Power up body bias circuits and methods
US9319013B2 (en) 2014-08-19 2016-04-19 Mie Fujitsu Semiconductor Limited Operational amplifier input offset correction with transistor threshold voltage adjustment
DE102015204519B4 (de) * 2015-03-12 2019-01-03 Dialog Semiconductor (UK) Ltd Genaue Stromerfassungsschaltung und Verfahren zur genauen Stromerfassung
US11243235B2 (en) * 2018-07-06 2022-02-08 Texas Instruments Incorporated Load current sensing at low output voltage
JP7241565B2 (ja) * 2019-02-25 2023-03-17 エイブリック株式会社 電流生成回路
US11422168B2 (en) 2020-09-16 2022-08-23 Nxp Usa, Inc. On-chip, low-voltage, current sensing circuit
US20230185321A1 (en) * 2021-12-14 2023-06-15 Qorvo Us, Inc. Current-monitor circuit for voltage regulator in system-on-chip

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3947778A (en) * 1974-09-11 1976-03-30 Motorola, Inc. Differential amplifier
US4048575A (en) * 1974-09-11 1977-09-13 Motorola, Inc. Operational amplifier
SU748800A1 (ru) * 1977-10-04 1980-07-15 Предприятие П/Я А-1889 Дифференциальный усилитель
US4188588A (en) * 1978-12-15 1980-02-12 Rca Corporation Circuitry with unbalanced long-tailed-pair connections of FET's
US4345213A (en) * 1980-02-28 1982-08-17 Rca Corporation Differential-input amplifier circuitry with increased common-mode _voltage range
US4319181A (en) * 1980-12-24 1982-03-09 Motorola, Inc. Solid state current sensing circuit
JPS5943608A (ja) * 1982-09-06 1984-03-10 Hitachi Ltd 省電力回路
US4553084A (en) * 1984-04-02 1985-11-12 Motorola, Inc. Current sensing circuit
NL8503394A (nl) * 1985-12-10 1987-07-01 Philips Nv Stroomaftastschakeling voor een vermogenshalfgeleiderinrichting, in het bijzonder geintegreerde intelligente vermogenshalfgeleiderschakelaar voor met name automobieltoepassingen.

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009001899B4 (de) 2009-03-26 2024-01-18 Robert Bosch Gmbh Messen eines Laststroms eines Unterbrechers
DE102015204518A1 (de) * 2015-03-12 2016-09-15 Dialog Semiconductor (Uk) Limited Offset-Kompensation für einen VDS-Ausgleicher in einer Stromerfassungsschaltung
DE102015204518B4 (de) * 2015-03-12 2017-04-13 Dialog Semiconductor (Uk) Limited Offset-Kompensation für einen VDS-Ausgleicher in einer Stromerfassungsschaltung
US10041983B2 (en) 2015-03-12 2018-08-07 Dialog Semiconductor (Uk) Limited VDS equalizer offset compensation for a current sense circuit
DE102015222570A1 (de) * 2015-11-16 2017-05-18 Dialog Semiconductor (Uk) Limited Schaltung und verfahren zur stromerfassung mit hoher genauigkeit
US10205378B2 (en) 2015-11-16 2019-02-12 Dialog Semiconductor (Uk) Limited Circuit and method for high-accuracy current sensing
DE102015222570B4 (de) 2015-11-16 2024-04-11 Dialog Semiconductor (Uk) Limited Schaltung und verfahren zur stromerfassung mit hoher genauigkeit

Also Published As

Publication number Publication date
DE3855506D1 (de) 1996-10-10
GB2206010A (en) 1988-12-21
KR890001278A (ko) 1989-03-20
US4885477A (en) 1989-12-05
EP0294880A2 (de) 1988-12-14
KR0128731B1 (ko) 1998-04-22
EP0294880A3 (en) 1989-06-07
GB8713387D0 (en) 1987-07-15
JP2628694B2 (ja) 1997-07-09
EP0294880B1 (de) 1996-09-04
JPS63316908A (ja) 1988-12-26

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