DE3751607T2 - Stromversorgungsleitungen in einer integrierten Halbleiterschaltung. - Google Patents

Stromversorgungsleitungen in einer integrierten Halbleiterschaltung.

Info

Publication number
DE3751607T2
DE3751607T2 DE3751607T DE3751607T DE3751607T2 DE 3751607 T2 DE3751607 T2 DE 3751607T2 DE 3751607 T DE3751607 T DE 3751607T DE 3751607 T DE3751607 T DE 3751607T DE 3751607 T2 DE3751607 T2 DE 3751607T2
Authority
DE
Germany
Prior art keywords
power supply
integrated circuit
semiconductor integrated
supply lines
lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3751607T
Other languages
English (en)
Other versions
DE3751607D1 (de
Inventor
Soichi C O Nec Corporation Ito
Yoshihiro C O Nec Corp Mabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3751607D1 publication Critical patent/DE3751607D1/de
Application granted granted Critical
Publication of DE3751607T2 publication Critical patent/DE3751607T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5286—Arrangements of power or ground buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio
DE3751607T 1986-01-22 1987-01-21 Stromversorgungsleitungen in einer integrierten Halbleiterschaltung. Expired - Lifetime DE3751607T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61012376A JPH0785490B2 (ja) 1986-01-22 1986-01-22 集積回路装置

Publications (2)

Publication Number Publication Date
DE3751607D1 DE3751607D1 (de) 1996-01-04
DE3751607T2 true DE3751607T2 (de) 1996-07-11

Family

ID=11803549

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3751607T Expired - Lifetime DE3751607T2 (de) 1986-01-22 1987-01-21 Stromversorgungsleitungen in einer integrierten Halbleiterschaltung.

Country Status (4)

Country Link
US (1) US4833520A (de)
EP (1) EP0231821B1 (de)
JP (1) JPH0785490B2 (de)
DE (1) DE3751607T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0738414B2 (ja) * 1987-01-09 1995-04-26 株式会社東芝 半導体集積回路
US4786613A (en) * 1987-02-24 1988-11-22 International Business Machines Corporation Method of combining gate array and standard cell circuits on a common semiconductor chip
JP2712079B2 (ja) * 1988-02-15 1998-02-10 株式会社東芝 半導体装置
JPH0744223B2 (ja) * 1988-08-17 1995-05-15 株式会社東芝 電源配線構造の設計方法
JP2668981B2 (ja) * 1988-09-19 1997-10-27 富士通株式会社 半導体集積回路
US5168342A (en) * 1989-01-30 1992-12-01 Hitachi, Ltd. Semiconductor integrated circuit device and manufacturing method of the same
US5124776A (en) * 1989-03-14 1992-06-23 Fujitsu Limited Bipolar integrated circuit having a unit block structure
JP2917434B2 (ja) * 1989-09-08 1999-07-12 セイコーエプソン株式会社 マスタースライス集積回路装置
US5206529A (en) * 1989-09-25 1993-04-27 Nec Corporation Semiconductor integrated circuit device
AU4059099A (en) 1998-06-30 2000-01-17 Yoshimitsu Suda Indication device
CN111727215B (zh) 2017-12-18 2022-08-09 博里利斯股份公司 含有抗氧化剂且形成甲烷的交联组合物及其制品
EP3717526B1 (de) 2017-12-18 2022-09-21 Borealis AG Polyethylen mit hohem vinylgehalt und einem niedrigen mfr
WO2019121730A1 (en) 2017-12-18 2019-06-27 Borealis Ag A polyethylene with a low mfr and with a high vinyl content
WO2019121716A1 (en) 2017-12-18 2019-06-27 Borealis Ag Cable made from crosslinkable composition without antioxidant and with beneficial methane formation

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999214A (en) * 1974-06-26 1976-12-21 Ibm Corporation Wireable planar integrated circuit chip structure
US4006492A (en) * 1975-06-23 1977-02-01 International Business Machines Corporation High density semiconductor chip organization
US4161662A (en) * 1976-01-22 1979-07-17 Motorola, Inc. Standardized digital logic chip
JPS5915183B2 (ja) * 1976-08-16 1984-04-07 株式会社日立製作所 マトリツクス配線基板
JPS58142544A (ja) * 1982-02-19 1983-08-24 Hitachi Ltd 半導体集積回路
JPS5979549A (ja) * 1982-10-29 1984-05-08 Toshiba Corp 半導体集積回路
US4568961A (en) * 1983-03-11 1986-02-04 Rca Corporation Variable geometry automated universal array
JPS59207641A (ja) * 1983-05-11 1984-11-24 Hitachi Ltd 集積回路
JPS60101951A (ja) * 1983-11-08 1985-06-06 Sanyo Electric Co Ltd ゲ−トアレイ
JPS6114734A (ja) * 1984-06-29 1986-01-22 Fujitsu Ltd 半導体集積回路装置及びその製造方法
JPS6115346A (ja) * 1984-06-30 1986-01-23 Toshiba Corp 半導体論理集積回路装置
DE3585756D1 (de) * 1984-07-02 1992-05-07 Fujitsu Ltd Halbleiterschaltungsanordnung in hauptscheibentechnik.

Also Published As

Publication number Publication date
DE3751607D1 (de) 1996-01-04
EP0231821B1 (de) 1995-11-22
JPS62169444A (ja) 1987-07-25
EP0231821A2 (de) 1987-08-12
EP0231821A3 (en) 1990-04-04
US4833520A (en) 1989-05-23
JPH0785490B2 (ja) 1995-09-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP