DE3727264A1 - Chemisches dampf-ablagerungsverfahren und vorrichtung zur durchfuehrung derselben - Google Patents

Chemisches dampf-ablagerungsverfahren und vorrichtung zur durchfuehrung derselben

Info

Publication number
DE3727264A1
DE3727264A1 DE19873727264 DE3727264A DE3727264A1 DE 3727264 A1 DE3727264 A1 DE 3727264A1 DE 19873727264 DE19873727264 DE 19873727264 DE 3727264 A DE3727264 A DE 3727264A DE 3727264 A1 DE3727264 A1 DE 3727264A1
Authority
DE
Germany
Prior art keywords
substrate
aluminum
deposition
deposited
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19873727264
Other languages
German (de)
English (en)
Other versions
DE3727264C2 (OSRAM
Inventor
Takao Amazawa
Hiroaki Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61190494A external-priority patent/JPS6347364A/ja
Priority claimed from JP62118147A external-priority patent/JPH0765179B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE3727264A1 publication Critical patent/DE3727264A1/de
Application granted granted Critical
Publication of DE3727264C2 publication Critical patent/DE3727264C2/de
Granted legal-status Critical Current

Links

Classifications

    • H01L21/203—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19873727264 1986-08-15 1987-08-15 Chemisches dampf-ablagerungsverfahren und vorrichtung zur durchfuehrung derselben Granted DE3727264A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61190494A JPS6347364A (ja) 1986-08-15 1986-08-15 化学的気相成長法およびその装置
JP62118147A JPH0765179B2 (ja) 1987-05-15 1987-05-15 化学的気相成長方法

Publications (2)

Publication Number Publication Date
DE3727264A1 true DE3727264A1 (de) 1988-02-18
DE3727264C2 DE3727264C2 (OSRAM) 1989-10-19

Family

ID=26456133

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873727264 Granted DE3727264A1 (de) 1986-08-15 1987-08-15 Chemisches dampf-ablagerungsverfahren und vorrichtung zur durchfuehrung derselben

Country Status (4)

Country Link
US (1) US4956204A (OSRAM)
KR (1) KR910001190B1 (OSRAM)
DE (1) DE3727264A1 (OSRAM)
GB (1) GB2195663B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5462014A (en) * 1990-03-09 1995-10-31 Nippon Telegraph And Telephone Corporation Apparatus for growing a thin metallic film

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US5227195A (en) * 1989-04-04 1993-07-13 Sri International Low temperature method of forming materials using one or more metal reactants and a halogen-containing reactant to form one or more reactive intermediates
US5104694A (en) * 1989-04-21 1992-04-14 Nippon Telephone & Telegraph Corporation Selective chemical vapor deposition of a metallic film on the silicon surface
US5316639A (en) * 1989-06-05 1994-05-31 Sachiko Okazaki Dielectric material used for an ozone generator and a method of forming a film to the dielectric material
EP0459770B1 (en) * 1990-05-31 1995-05-03 Canon Kabushiki Kaisha Method for producing a semiconductor device with gate structure
JP2790362B2 (ja) * 1990-06-04 1998-08-27 キヤノン株式会社 半導体装置
US5008217A (en) * 1990-06-08 1991-04-16 At&T Bell Laboratories Process for fabricating integrated circuits having shallow junctions
DE69130041T2 (de) * 1990-06-29 1999-02-18 Canon K.K., Tokio/Tokyo Verfahren zum Herstellen einer Halbleiteranordnung mit Schottky-übergang
US5242852A (en) * 1990-08-03 1993-09-07 Matsushita Electric Industrial Co. Ltd. Method for manufacturing a semiconductor memory device
US5273775A (en) * 1990-09-12 1993-12-28 Air Products And Chemicals, Inc. Process for selectively depositing copper aluminum alloy onto a substrate
US5171734A (en) * 1991-04-22 1992-12-15 Sri International Coating a substrate in a fluidized bed maintained at a temperature below the vaporization temperature of the resulting coating composition
JPH04348035A (ja) * 1991-05-24 1992-12-03 Nippon Steel Corp 配線形成方法
JP3507072B2 (ja) * 1991-07-16 2004-03-15 セイコーエプソン株式会社 化学気相推積装置及び半導体膜形成方法と薄膜半導体装置の製造方法
US5451547A (en) * 1991-08-26 1995-09-19 Nippondenso Co., Ltd. Method of manufacturing semiconductor substrate
US5627345A (en) * 1991-10-24 1997-05-06 Kawasaki Steel Corporation Multilevel interconnect structure
US6004885A (en) * 1991-12-26 1999-12-21 Canon Kabushiki Kaisha Thin film formation on semiconductor wafer
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
US5565382A (en) * 1993-10-12 1996-10-15 Applied Materials, Inc. Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas
US6159854A (en) * 1994-08-22 2000-12-12 Fujitsu Limited Process of growing conductive layer from gas phase
US5963836A (en) * 1996-12-03 1999-10-05 Genus, Inc. Methods for minimizing as-deposited stress in tungsten silicide films
US6749687B1 (en) * 1998-01-09 2004-06-15 Asm America, Inc. In situ growth of oxide and silicon layers
US6200911B1 (en) 1998-04-21 2001-03-13 Applied Materials, Inc. Method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps using differential plasma power
JP3793014B2 (ja) * 2000-10-03 2006-07-05 キヤノン株式会社 電子源の製造装置、電子源の製造方法及び画像形成装置の製造方法
US6638819B1 (en) * 2000-11-17 2003-10-28 Newport Fab, Llc Method for fabricating interfacial oxide in a transistor and related structure
US6447651B1 (en) 2001-03-07 2002-09-10 Applied Materials, Inc. High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers
WO2004007797A1 (ja) * 2002-07-10 2004-01-22 Tokyo Electron Limited 成膜装置
US20050271893A1 (en) * 2004-06-04 2005-12-08 Applied Microstructures, Inc. Controlled vapor deposition of multilayered coatings adhered by an oxide layer
US7638167B2 (en) * 2004-06-04 2009-12-29 Applied Microstructures, Inc. Controlled deposition of silicon-containing coatings adhered by an oxide layer
WO2005028704A1 (en) * 2003-09-19 2005-03-31 Akzo Nobel N.V. Metallization of substrate (s) by a liquid/vapor deposition process
KR100762573B1 (ko) * 2004-06-04 2007-10-01 어플라이드 마이크로스트럭쳐스, 인코포레이티드 산화물층에 의해 부착된 다층 코팅의 제어되는 기상 증착
US7695775B2 (en) * 2004-06-04 2010-04-13 Applied Microstructures, Inc. Controlled vapor deposition of biocompatible coatings over surface-treated substrates
US7879396B2 (en) * 2004-06-04 2011-02-01 Applied Microstructures, Inc. High aspect ratio performance coatings for biological microfluidics
JP4591917B2 (ja) * 2004-09-30 2010-12-01 株式会社トリケミカル研究所 導電性モリブデンナイトライド膜形成方法
KR100580751B1 (ko) 2004-12-23 2006-05-15 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
US20120213929A1 (en) * 2011-02-18 2012-08-23 Tokyo Electron Limited Method of operating filament assisted chemical vapor deposition system
WO2017040623A1 (en) 2015-09-01 2017-03-09 Silcotek Corp. Thermal chemical vapor deposition coating
US9633896B1 (en) 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films
US20170211180A1 (en) * 2016-01-22 2017-07-27 Silcotek Corp. Diffusion-rate-limited thermal chemical vapor deposition coating
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
DE102018120580A1 (de) * 2018-08-23 2020-02-27 Infineon Technologies Ag Vorrichtung und verfahren zum abscheiden einer schicht bei atmosphärendruck
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール

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US4634605A (en) * 1984-05-23 1987-01-06 Wiesmann Harold J Method for the indirect deposition of amorphous silicon and polycrystalline silicone and alloys thereof

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US4634605A (en) * 1984-05-23 1987-01-06 Wiesmann Harold J Method for the indirect deposition of amorphous silicon and polycrystalline silicone and alloys thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5462014A (en) * 1990-03-09 1995-10-31 Nippon Telegraph And Telephone Corporation Apparatus for growing a thin metallic film

Also Published As

Publication number Publication date
GB2195663B (en) 1990-08-22
GB8719166D0 (en) 1987-09-23
GB2195663A (en) 1988-04-13
DE3727264C2 (OSRAM) 1989-10-19
KR910001190B1 (ko) 1991-02-25
KR880003403A (ko) 1988-05-16
US4956204A (en) 1990-09-11

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