DE3727019A1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE3727019A1
DE3727019A1 DE19873727019 DE3727019A DE3727019A1 DE 3727019 A1 DE3727019 A1 DE 3727019A1 DE 19873727019 DE19873727019 DE 19873727019 DE 3727019 A DE3727019 A DE 3727019A DE 3727019 A1 DE3727019 A1 DE 3727019A1
Authority
DE
Germany
Prior art keywords
silicon carbide
carbide layer
layer
high resistance
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19873727019
Other languages
German (de)
English (en)
Other versions
DE3727019C2 (enrdf_load_stackoverflow
Inventor
Akira Suzuki
Katsuki Furukawa
Akitsugu Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE3727019A1 publication Critical patent/DE3727019A1/de
Application granted granted Critical
Publication of DE3727019C2 publication Critical patent/DE3727019C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19873727019 1986-08-18 1987-08-13 Halbleiterbauelement Granted DE3727019A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61193158A JPS6347983A (ja) 1986-08-18 1986-08-18 炭化珪素電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE3727019A1 true DE3727019A1 (de) 1988-02-25
DE3727019C2 DE3727019C2 (enrdf_load_stackoverflow) 1993-06-17

Family

ID=16303247

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19873727019 Granted DE3727019A1 (de) 1986-08-18 1987-08-13 Halbleiterbauelement

Country Status (3)

Country Link
US (1) US4897710A (enrdf_load_stackoverflow)
JP (1) JPS6347983A (enrdf_load_stackoverflow)
DE (1) DE3727019A1 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991009421A1 (en) * 1989-12-07 1991-06-27 General Instrument Corporation Packaged diode for high temperature operation
FR2677810A1 (fr) * 1991-06-12 1992-12-18 Samsung Electronics Co Ltd Procede de fabrication d'un dispositif a semiconducteurs.
WO1995018465A1 (en) * 1993-12-28 1995-07-06 North Carolina State University Three-terminal gate-controlled semiconductor switching device with rectifying-gate
US5488236A (en) * 1994-05-26 1996-01-30 North Carolina State University Latch-up resistant bipolar transistor with trench IGFET and buried collector

Families Citing this family (47)

* Cited by examiner, † Cited by third party
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US5229625A (en) * 1986-08-18 1993-07-20 Sharp Kabushiki Kaisha Schottky barrier gate type field effect transistor
US5216264A (en) * 1989-06-07 1993-06-01 Sharp Kabushiki Kaisha Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
JP2542448B2 (ja) * 1990-05-24 1996-10-09 シャープ株式会社 電界効果トランジスタおよびその製造方法
US5264713A (en) * 1991-06-14 1993-11-23 Cree Research, Inc. Junction field-effect transistor formed in silicon carbide
US5270554A (en) * 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
JPH0685173A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体集積回路用キャパシタ
US5298767A (en) * 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
JP3146694B2 (ja) * 1992-11-12 2001-03-19 富士電機株式会社 炭化けい素ｍｏｓｆｅｔおよび炭化けい素ｍｏｓｆｅｔの製造方法
US5378642A (en) * 1993-04-19 1995-01-03 General Electric Company Method of making a silicon carbide junction field effect transistor device for high temperature applications
US5925895A (en) * 1993-10-18 1999-07-20 Northrop Grumman Corporation Silicon carbide power MESFET with surface effect supressive layer
US5510630A (en) * 1993-10-18 1996-04-23 Westinghouse Electric Corporation Non-volatile random access memory cell constructed of silicon carbide
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
US6121633A (en) * 1997-06-12 2000-09-19 Cree Research, Inc. Latch-up free power MOS-bipolar transistor
US5969378A (en) * 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
US6794255B1 (en) * 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US7154153B1 (en) 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6031263A (en) * 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US7196929B1 (en) * 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US20080197172A1 (en) * 1999-02-25 2008-08-21 Reiber Steven F Bonding Tool
US7032802B2 (en) * 1999-02-25 2006-04-25 Reiber Steven F Bonding tool with resistance
US6354479B1 (en) * 1999-02-25 2002-03-12 Sjm Technologies Dissipative ceramic bonding tip
US7389905B2 (en) 1999-02-25 2008-06-24 Reiber Steven F Flip chip bonding tool tip
US20060261132A1 (en) * 1999-02-25 2006-11-23 Reiber Steven F Low range bonding tool
US6651864B2 (en) 1999-02-25 2003-11-25 Steven Frederick Reiber Dissipative ceramic bonding tool tip
US7124927B2 (en) * 1999-02-25 2006-10-24 Reiber Steven F Flip chip bonding tool and ball placement capillary
US20070131661A1 (en) * 1999-02-25 2007-06-14 Reiber Steven F Solder ball placement system
US20060071050A1 (en) * 1999-02-25 2006-04-06 Reiber Steven F Multi-head tab bonding tool
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6218680B1 (en) * 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
JP4423699B2 (ja) * 1999-05-27 2010-03-03 ソニー株式会社 半導体レーザ素子及びその作製方法
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
US6412919B1 (en) 2000-09-05 2002-07-02 Hewlett-Packard Company Transistor drop ejectors in ink-jet print heads
US6906350B2 (en) 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
US6956239B2 (en) 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
US7238224B2 (en) * 2004-10-29 2007-07-03 Hewlett-Packard Development Company, L.P. Fluid-gas separator
US20060091606A1 (en) * 2004-10-28 2006-05-04 Gary Paugh Magnetic building game
US7348612B2 (en) 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
US7265399B2 (en) 2004-10-29 2007-09-04 Cree, Inc. Asymetric layout structures for transistors and methods of fabricating the same
US7326962B2 (en) 2004-12-15 2008-02-05 Cree, Inc. Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same
US8203185B2 (en) 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US20070085085A1 (en) * 2005-08-08 2007-04-19 Reiber Steven F Dissipative pick and place tools for light wire and LED displays
US7402844B2 (en) 2005-11-29 2008-07-22 Cree, Inc. Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
US7646043B2 (en) 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3415799A1 (de) * 1983-04-28 1984-10-31 Sharp K.K., Osaka Verfahren zur herstellung eines einkristall-substrats aus siliziumcarbid

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US3497773A (en) * 1967-02-20 1970-02-24 Westinghouse Electric Corp Passive circuit elements
US3716844A (en) * 1970-07-29 1973-02-13 Ibm Image recording on tetrahedrally coordinated amorphous films
US3982262A (en) * 1974-04-17 1976-09-21 Karatsjuba Anatoly Prokofievic Semiconductor indicating instrument
DE2658304C2 (de) * 1975-12-24 1984-12-20 Tokyo Shibaura Electric Co., Ltd., Kawasaki, Kanagawa Halbleitervorrichtung
US4177474A (en) * 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. High temperature amorphous semiconductor member and method of making the same
US4109271A (en) * 1977-05-27 1978-08-22 Rca Corporation Amorphous silicon-amorphous silicon carbide photovoltaic device
US4329699A (en) * 1979-03-26 1982-05-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same
US4385199A (en) * 1980-12-03 1983-05-24 Yoshihiro Hamakawa Photovoltaic cell having a hetero junction of amorphous silicon carbide and amorphous silicon
DE3208638A1 (de) * 1982-03-10 1983-09-22 Siemens AG, 1000 Berlin und 8000 München Lumineszenzdiode aus siliziumkarbid
US4536459A (en) * 1982-03-12 1985-08-20 Canon Kabushiki Kaisha Photoconductive member having multiple amorphous layers
US4633287A (en) * 1982-08-09 1986-12-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor photoelectric conversion device
JPS60142568A (ja) * 1983-12-29 1985-07-27 Sharp Corp 炭化珪素電界効果トランジスタの製造方法
JPS60136223A (ja) * 1983-12-23 1985-07-19 Sharp Corp 炭化珪素半導体素子の製造方法
JPS60264399A (ja) * 1984-06-11 1985-12-27 Sharp Corp 炭化珪素単結晶の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3415799A1 (de) * 1983-04-28 1984-10-31 Sharp K.K., Osaka Verfahren zur herstellung eines einkristall-substrats aus siliziumcarbid

Non-Patent Citations (10)

* Cited by examiner, † Cited by third party
Title
Appl. Phys. Lett. 45(1), July 1984, pp. 72-73 *
Electronics/April 7, 1986, p. 15 *
IEEE Electron Device Lett., Vol. EDL-7, 1986, p. 324-326 *
IEEE Proceedings, Vol. 133, Pt. 1, No. 3, 1986, p. 66-76 *
J. Appl. Phys. 55(1), Jan. 1984, pp. 169-171 *
Jap. J. of Appl. Phys., Vol. 25, 1986, p L139-L141 *
Semicond. a. Semimetals, Ac. Press New York, 1971, Vol. 7, p.B, pp 625-683 *
US-Buch: O'CONNER, J.R. und SMILTENS, J. (Hrgb.): "Silicon Carbide - A High Temperature Semiconduc- tor", Proceedings of the Conference on Silicon Carbide, Boston, Massachusetts, April 2-3, 1959, Pergamon Press, Oxford 1960, S. 496, 504 und 505 *
US-Buch: SZE, S.M.: Physics of Semiconductor Devices, 2. Aufl., Verlag John Wiley & Sons, Inc.,New York 1981, S. 324, Fig. 6 *
US-Z: J.Electrochem.Soc.: Solid State Science, *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991009421A1 (en) * 1989-12-07 1991-06-27 General Instrument Corporation Packaged diode for high temperature operation
FR2677810A1 (fr) * 1991-06-12 1992-12-18 Samsung Electronics Co Ltd Procede de fabrication d'un dispositif a semiconducteurs.
WO1995018465A1 (en) * 1993-12-28 1995-07-06 North Carolina State University Three-terminal gate-controlled semiconductor switching device with rectifying-gate
US5488236A (en) * 1994-05-26 1996-01-30 North Carolina State University Latch-up resistant bipolar transistor with trench IGFET and buried collector

Also Published As

Publication number Publication date
JPS6347983A (ja) 1988-02-29
US4897710A (en) 1990-01-30
DE3727019C2 (enrdf_load_stackoverflow) 1993-06-17

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8363 Opposition against the patent
8381 Inventor (new situation)

Free format text: SUZUKI, AKIRA, NARA, JP FURUKAWA, KATSUKI, SAKAI, OSAKA, JP HATANO, AKITSUGU, TENRI, NARA, JP UEMOTO, ATSUKO, NARA, JP

8365 Fully valid after opposition proceedings
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN