DE3671676D1 - Ladungstransferschaltungsanordnung. - Google Patents

Ladungstransferschaltungsanordnung.

Info

Publication number
DE3671676D1
DE3671676D1 DE8686200457T DE3671676T DE3671676D1 DE 3671676 D1 DE3671676 D1 DE 3671676D1 DE 8686200457 T DE8686200457 T DE 8686200457T DE 3671676 T DE3671676 T DE 3671676T DE 3671676 D1 DE3671676 D1 DE 3671676D1
Authority
DE
Germany
Prior art keywords
sub
voltage
reset transistor
drain
charge transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686200457T
Other languages
English (en)
Inventor
Marcellinus Johannes M Pelgrom
Jan Willem Slotboom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3671676D1 publication Critical patent/DE3671676D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Polarising Elements (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
DE8686200457T 1985-03-25 1986-03-20 Ladungstransferschaltungsanordnung. Expired - Lifetime DE3671676D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL8500863A NL8500863A (nl) 1985-03-25 1985-03-25 Ladingsoverdrachtinrichting.

Publications (1)

Publication Number Publication Date
DE3671676D1 true DE3671676D1 (de) 1990-07-05

Family

ID=19845732

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686200457T Expired - Lifetime DE3671676D1 (de) 1985-03-25 1986-03-20 Ladungstransferschaltungsanordnung.

Country Status (8)

Country Link
US (1) US4627083A (de)
EP (1) EP0199387B1 (de)
JP (1) JPS61224357A (de)
AT (1) ATE53265T1 (de)
AU (1) AU575717B2 (de)
CA (1) CA1249059A (de)
DE (1) DE3671676D1 (de)
NL (1) NL8500863A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8600890A (nl) * 1986-04-09 1987-11-02 Philips Nv Halfgeleiderinrichting.
US4984256A (en) * 1987-02-13 1991-01-08 Kabushiki Kaisha Toshiba Charge transfer device with booster circuit
JP2672507B2 (ja) * 1987-05-21 1997-11-05 株式会社東芝 電荷転送素子
US4996686A (en) * 1987-05-21 1991-02-26 Kabushiki Kaisha Toshiba Charge transfer device with reset voltage generating circuit
FR2645323B1 (fr) * 1989-03-28 1992-11-27 Thomson Composants Militaires Registres de lecture du type a transfert de charges a grande dynamique de sortie
JP2707784B2 (ja) * 1990-03-10 1998-02-04 日本電気株式会社 電荷転送装置
US5748035A (en) * 1994-05-27 1998-05-05 Arithmos, Inc. Channel coupled feedback circuits
JP3259573B2 (ja) * 1995-03-17 2002-02-25 ソニー株式会社 電荷転送装置及びその駆動方法
JP2000049338A (ja) * 1998-07-28 2000-02-18 Mitsubishi Electric Corp 絶縁ゲート型トランジスタの特性評価方法、絶縁ゲート型トランジスタの製造方法、絶縁ゲート型トランジスタの特性評価装置、および特性評価プログラムを記録してあるコンピュータ読み取り可能な記録媒体
JP4641166B2 (ja) * 2004-09-15 2011-03-02 ルネサスエレクトロニクス株式会社 固体撮像装置の電荷転送デバイスおよび固体撮像装置の電荷転送デバイスの駆動方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2501934C2 (de) * 1974-01-25 1982-11-11 Hughes Aircraft Co., Culver City, Calif. Verfahren zum Betrieb eines ladungsgekoppelten Halbleiter-Bauelementes und ladungsgekoppeltes Halbleiter-Bauelement zur Durchführung dieses Verfahrens
US4060737A (en) * 1974-08-22 1977-11-29 Texas Instruments Incorporated Charge coupled device shift registers having an improved regenerative charge detector
JPS5328383A (en) * 1976-08-02 1978-03-16 Toshiba Corp Charge t ransfer device
DE2721039C2 (de) * 1977-05-10 1986-10-23 Siemens AG, 1000 Berlin und 8000 München Digitale Ladungsverschiebeanordnung
US4139784A (en) * 1977-08-02 1979-02-13 Rca Corporation CCD Input circuits
DE2838037A1 (de) * 1978-08-31 1980-04-10 Siemens Ag Monolithisch integrierte ladungsverschiebeanordnung
NL186416C (nl) * 1981-06-05 1990-11-16 Philips Nv Halfgeleiderinrichting omvattende een 4-fasen ladingsgekoppelde inrichting.
FR2549273B1 (fr) * 1983-07-12 1989-02-10 Thomson Csf Procede pour diminuer le bruit de precharge d'une capacite mos

Also Published As

Publication number Publication date
JPH055380B2 (de) 1993-01-22
EP0199387B1 (de) 1990-05-30
JPS61224357A (ja) 1986-10-06
AU5504886A (en) 1986-10-02
NL8500863A (nl) 1986-10-16
AU575717B2 (en) 1988-08-04
EP0199387A1 (de) 1986-10-29
ATE53265T1 (de) 1990-06-15
CA1249059A (en) 1989-01-17
US4627083A (en) 1986-12-02

Similar Documents

Publication Publication Date Title
EP0944094A3 (de) Flash-Speicher mit besserer Löschbarkeit und seine Schaltung
JPS56121114A (en) Constant-current circuit
JPS56108258A (en) Semiconductor device
TW357477B (en) A low-drop-out voltage regulator with PMOS pass element
SE8204247D0 (sv) Reference voltage generator
KR870011696A (ko) 전원전압강하회로
EP0570584A4 (de)
DE3671676D1 (de) Ladungstransferschaltungsanordnung.
JPS5737876A (en) Semiconductor integrated circuit apparatus
JPS5546694A (en) Standard source for integrated fet module
ES396464A1 (es) Circuito de almacenamiento binario.
GB1465499A (en) Current amplifier
IN191530B (de)
SE9900210D0 (sv) Gate biasing arrangement
KR880014807A (ko) 전하전송소자
JPS54102956A (en) Pulse amplifier circuit
JPS5525149A (en) Electric power circuit
SU1647886A1 (ru) Устройство с л мбда-характеристикой
SU1467745A1 (ru) Преобразователь напр жени в ток
SU662923A1 (ru) Генератор опорного напр жени
JPS5541141A (en) Semiconductor rectification circuit
SU450305A1 (ru) Енератор тока
SU493027A1 (ru) Ключ на моп-транзисторах дл коммутации разнопол рных напр жений
SU1483628A1 (ru) Устройство согласовани уровней напр жени на КМДП-транзисторах
JPS57183119A (en) Schmitt circuit

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee