SE8204247D0 - Reference voltage generator - Google Patents

Reference voltage generator

Info

Publication number
SE8204247D0
SE8204247D0 SE8204247A SE8204247A SE8204247D0 SE 8204247 D0 SE8204247 D0 SE 8204247D0 SE 8204247 A SE8204247 A SE 8204247A SE 8204247 A SE8204247 A SE 8204247A SE 8204247 D0 SE8204247 D0 SE 8204247D0
Authority
SE
Sweden
Prior art keywords
misfet
gate
misfets
output terminal
reference voltage
Prior art date
Application number
SE8204247A
Other languages
English (en)
Other versions
SE8204247L (sv
SE455544B (sv
Inventor
J Sakaguchi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SE8204247D0 publication Critical patent/SE8204247D0/sv
Publication of SE8204247L publication Critical patent/SE8204247L/sv
Publication of SE455544B publication Critical patent/SE455544B/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Control Of Electrical Variables (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SE8204247A 1981-07-31 1982-07-09 Referensspenningsgenerator SE455544B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56119072A JPS5822423A (ja) 1981-07-31 1981-07-31 基準電圧発生回路

Publications (3)

Publication Number Publication Date
SE8204247D0 true SE8204247D0 (sv) 1982-07-09
SE8204247L SE8204247L (sv) 1983-02-01
SE455544B SE455544B (sv) 1988-07-18

Family

ID=14752184

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8204247A SE455544B (sv) 1981-07-31 1982-07-09 Referensspenningsgenerator

Country Status (9)

Country Link
US (1) US4454467A (sv)
JP (1) JPS5822423A (sv)
DE (1) DE3228574A1 (sv)
FR (1) FR2510781A1 (sv)
GB (1) GB2105072B (sv)
HK (1) HK45686A (sv)
IT (1) IT1215216B (sv)
MY (1) MY8600556A (sv)
SE (1) SE455544B (sv)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59212927A (ja) * 1983-05-18 1984-12-01 Mitsubishi Electric Corp 定電圧発生回路
IT1179823B (it) * 1984-11-22 1987-09-16 Cselt Centro Studi Lab Telecom Generatore di tensione differenziale di rifferimento per circuiti integrati ad alimentazione singola in tecnologia nmos
US4788455A (en) * 1985-08-09 1988-11-29 Mitsubishi Denki Kabushiki Kaisha CMOS reference voltage generator employing separate reference circuits for each output transistor
US5187685A (en) * 1985-11-22 1993-02-16 Hitachi, Ltd. Complementary MISFET voltage generating circuit for a semiconductor memory
JPS62188255A (ja) * 1986-02-13 1987-08-17 Toshiba Corp 基準電圧発生回路
KR910001293B1 (ko) * 1986-03-31 1991-02-28 가부시키가이샤 도시바 전원전압검출회로
US4789825A (en) * 1986-05-14 1988-12-06 American Telephone And Telegraph Co., At&T Bell Laboratories Integrated circuit with channel length indicator
US4837459A (en) * 1987-07-13 1989-06-06 International Business Machines Corp. CMOS reference voltage generation
NL8800851A (nl) * 1988-04-05 1989-11-01 Philips Nv Halfgeleidergeheugeninrichting.
US5254880A (en) * 1988-05-25 1993-10-19 Hitachi, Ltd. Large scale integrated circuit having low internal operating voltage
US4994688A (en) * 1988-05-25 1991-02-19 Hitachi Ltd. Semiconductor device having a reference voltage generating circuit
JP2804162B2 (ja) * 1989-09-08 1998-09-24 株式会社日立製作所 定電流定電圧回路
NL9001018A (nl) * 1990-04-27 1991-11-18 Philips Nv Referentiegenerator.
JP2839203B2 (ja) * 1990-09-20 1998-12-16 富士通株式会社 半導体集積回路
US5200921A (en) * 1990-09-20 1993-04-06 Fujitsu Limited Semiconductor integrated circuit including P-channel MOS transistors having different threshold voltages
US5221864A (en) * 1991-12-17 1993-06-22 International Business Machines Corporation Stable voltage reference circuit with high Vt devices
JP3318363B2 (ja) * 1992-09-02 2002-08-26 株式会社日立製作所 基準電圧発生回路
US5703476A (en) * 1995-06-30 1997-12-30 Sgs-Thomson Microelectronics, S.R.L. Reference voltage generator, having a double slope temperature characteristic, for a voltage regulator of an automotive alternator
TW307060B (en) * 1996-02-15 1997-06-01 Advanced Micro Devices Inc CMOS current mirror
US5877615A (en) * 1997-11-06 1999-03-02 Utek Semiconductor Corporation Dynamic input reference voltage adjuster
JP2002299469A (ja) * 2001-04-04 2002-10-11 Seiko Instruments Inc 半導体装置
US6885239B2 (en) * 2001-10-31 2005-04-26 Kabushiki Kaisha Toshiba Mobility proportion current generator, and bias generator and amplifier using the same
JP4847103B2 (ja) * 2005-11-07 2011-12-28 株式会社リコー ハーフバンドギャップリファレンス回路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3806742A (en) * 1972-11-01 1974-04-23 Motorola Inc Mos voltage reference circuit
JPS5632222B2 (sv) * 1973-10-25 1981-07-27
US4068140A (en) * 1976-12-27 1978-01-10 Texas Instruments Incorporated MOS source follower circuit
DE2708022C3 (de) * 1977-02-24 1980-01-10 Eurosil Gmbh, 8000 Muenchen Schaltungsanordnung in integrierter MOS-Technik zur Abgabe einer Konstantspannung
US4096430A (en) * 1977-04-04 1978-06-20 General Electric Company Metal-oxide-semiconductor voltage reference
JPS54132753A (en) * 1978-04-05 1979-10-16 Hitachi Ltd Referential voltage generator and its application
CH628462A5 (fr) * 1978-12-22 1982-02-26 Centre Electron Horloger Source de tension de reference.
JPS56121114A (en) * 1980-02-28 1981-09-22 Seiko Instr & Electronics Ltd Constant-current circuit
US4347476A (en) * 1980-12-04 1982-08-31 Rockwell International Corporation Voltage-temperature insensitive on-chip reference voltage source compatible with VLSI manufacturing techniques
GB2090442B (en) * 1980-12-10 1984-09-05 Suwa Seikosha Kk A low voltage regulation circuit

Also Published As

Publication number Publication date
IT1215216B (it) 1990-01-31
GB2105072A (en) 1983-03-16
DE3228574A1 (de) 1983-04-21
SE8204247L (sv) 1983-02-01
MY8600556A (en) 1986-12-31
US4454467A (en) 1984-06-12
FR2510781B1 (sv) 1985-03-15
SE455544B (sv) 1988-07-18
HK45686A (en) 1986-06-27
FR2510781A1 (fr) 1983-02-04
IT8222683A0 (it) 1982-07-30
JPS5822423A (ja) 1983-02-09
GB2105072B (en) 1985-05-01

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