FR2549273B1 - Procede pour diminuer le bruit de precharge d'une capacite mos - Google Patents

Procede pour diminuer le bruit de precharge d'une capacite mos

Info

Publication number
FR2549273B1
FR2549273B1 FR8311611A FR8311611A FR2549273B1 FR 2549273 B1 FR2549273 B1 FR 2549273B1 FR 8311611 A FR8311611 A FR 8311611A FR 8311611 A FR8311611 A FR 8311611A FR 2549273 B1 FR2549273 B1 FR 2549273B1
Authority
FR
France
Prior art keywords
preloading
noise
reducing
mos capacity
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8311611A
Other languages
English (en)
Other versions
FR2549273A1 (fr
Inventor
Marc Arques
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8311611A priority Critical patent/FR2549273B1/fr
Publication of FR2549273A1 publication Critical patent/FR2549273A1/fr
Application granted granted Critical
Publication of FR2549273B1 publication Critical patent/FR2549273B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816Output structures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Amplifiers (AREA)
FR8311611A 1983-07-12 1983-07-12 Procede pour diminuer le bruit de precharge d'une capacite mos Expired FR2549273B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8311611A FR2549273B1 (fr) 1983-07-12 1983-07-12 Procede pour diminuer le bruit de precharge d'une capacite mos

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8311611A FR2549273B1 (fr) 1983-07-12 1983-07-12 Procede pour diminuer le bruit de precharge d'une capacite mos

Publications (2)

Publication Number Publication Date
FR2549273A1 FR2549273A1 (fr) 1985-01-18
FR2549273B1 true FR2549273B1 (fr) 1989-02-10

Family

ID=9290761

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8311611A Expired FR2549273B1 (fr) 1983-07-12 1983-07-12 Procede pour diminuer le bruit de precharge d'une capacite mos

Country Status (1)

Country Link
FR (1) FR2549273B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8500863A (nl) * 1985-03-25 1986-10-16 Philips Nv Ladingsoverdrachtinrichting.
JP3143979B2 (ja) * 1991-08-22 2001-03-07 ソニー株式会社 Ccdシフトレジスタ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5598865A (en) * 1979-01-22 1980-07-28 Toshiba Corp Charge transfer device

Also Published As

Publication number Publication date
FR2549273A1 (fr) 1985-01-18

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